Patent Application
20210274609
The present disclosure relates to an RF energy radiation device with improved reliability.
Radio frequency (RF) energy radiation devices such as microwave ovens known in the art detect reflected power, adjust output power in accordance with the magnitude of the reflected power, and stop output if the magnitude of the reflected power is equal to or higher than a threshold. This is how the RF energy radiation devices known in the art protect themselves (see, for example, Patent Literature 1). Patent Literature 2 discloses a technique for detecting not only reflected power but also high-frequency current, thereby improving the protection of the devices.
Control unit 6 controls drive unit 7. When drive unit 7 supplies power to magnetron 1, magnetron 1 generates a microwave. Waveguide 2 transmits the microwave to power supply unit 4. Power supply unit 4 radiates the microwave into cavity 3.
Detection unit 5 detects the reflected power that returns to waveguide 2 from cavity 3 via power supply unit 4. Control unit 6 controls drive unit 7 based on the reflected power detected by detection unit 5.
In the RF energy radiation device known in the art, 30% to 50% of energy consumption is radiated as heat due to the energy efficiency of the semiconductor amplifier. This energy efficiency varies depending on load or ambient temperature, so that the amount of heat to be released also varies. The relation between the heat and the efficiency is a significant issue in using the semiconductor amplifier. The termination that receives and absorbs reflected power generates heat. Therefore, detecting reflected power and high-frequency current alone is not necessarily enough to protect the device effectively.
An object of the present disclosure, which solves the above-described problem, is to provide a reliable RF energy radiation device.
The RF energy radiation device according to an aspect of the present disclosure includes the following components: a cavity in which a heating target object is to be placed, an RF signal generation unit, an RF amplifier, a radiation element, a temperature sensor, and a controller. The RF signal generation unit oscillates an RF signal. The RF amplifier amplifies the RF signal to provide RF energy. The radiation element radiates the RF energy into the cavity. The temperature sensor is disposed in the vicinity of the RF amplifier. The controller causes the RF amplifier to adjust the output of the RF energy in accordance with the temperature detected by the temperature sensor and a plurality of threshold levels.
The RF energy radiation device according to the present aspect monitors the temperatures of the heat-generating components. This enables adjusting the RF energy and radiating the RF energy efficiency to a heating target object. This also enables detecting a mounting failure and stopping the device immediately. Hence, the device has higher reliability.
An RF energy radiation device according to a first aspect of the present disclosure includes the following components: a cavity in which a heating target object is to be placed, an RF signal generation unit, an RF amplifier, a radiation element, a temperature sensor, and a controller. The RF signal generation unit oscillates an RF signal. The RF amplifier amplifies the RF signal to provide RF energy. The radiation element radiates the RF energy into the cavity. The temperature sensor is disposed in the vicinity of the RF amplifier. The controller causes the RF amplifier to adjust the output of the RF energy in accordance with the temperature detected by the temperature sensor and a plurality of threshold levels.
In an RF energy radiation device according to a second aspect of the present disclosure, in addition to the first aspect, when the temperature detected by the temperature sensor exceeds one of the plurality of threshold levels, the controller causes the RF amplifier to adjust the output value of the RF energy in accordance with the temperature that exceeds the one of the plurality of threshold levels.
In an RF energy radiation device according to a third aspect of the present disclosure, in addition to the second aspect, when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller controls the RF amplifier so that the RF amplifier reduces the output value of the RF energy.
In an RF energy radiation device according to a fourth aspect of the present disclosure, in addition to the third aspect, the different one of the plurality of threshold levels varies depending on the rising rate of the temperature detected by the temperature sensor.
In an RF energy radiation device according to a fifth aspect of the present disclosure, in addition to the second aspect, when the temperature detected by the temperature sensor exceeds a different one of the plurality of threshold levels that is higher than the one of the plurality of threshold levels, the controller stops the RF signal generation unit.
In an RF energy radiation device according to a sixth aspect of the present disclosure, in addition to the first aspect, the plurality of threshold levels include a first threshold level, a second threshold level higher than the first threshold level, and a third threshold level higher than the second threshold level. When the temperature detected by the temperature sensor exceeds the first threshold level, the controller controls the RF amplifier so that the RF amplifier adjusts the output of the RF energy in accordance with the temperature that exceeds the first threshold level. When the temperature detected by the temperature sensor exceeds the second threshold level, the controller controls the RF amplifier so that the RF amplifier reduces the output of the RF energy. When the temperature detected by the temperature sensor exceeds the third threshold level, the controller stops the RF signal generation unit.
In an RF energy radiation device according to a seventh aspect of the present disclosure, in addition to the sixth aspect, the second threshold level varies depending on the rising rate of the temperature detected by the temperature sensor.
In an RF energy radiation device according to an eighth aspect of the present disclosure, in addition to the first aspect, the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that the bottom of the semiconductor device is in contact with a base plate. The temperature sensor is disposed on the side of the substrate opposite to the side on which the semiconductor device is disposed.
In an RF energy radiation device according to a ninth aspect of the present disclosure, in addition to the first aspect, the RF amplifier is included in a semiconductor device disposed on a substrate in such a manner that the bottom of the semiconductor device is in contact with a base plate. The temperature sensor is disposed on the same side of the substrate as the side on which the semiconductor device is disposed.
RF energy radiation device 100 according to an exemplary embodiment of the present disclosure will now be described with reference to the drawings.
As shown in
Oscillators 101a and 101b each oscillate an RF signal. Power amplifiers 102a and 102b amplify the RF signals oscillated by oscillators 101a and 101b, respectively, and each provide RF power. Detectors 103a and 103b detect the RF power transmitted from RF energy radiation device 100 toward radiation elements 107a and 107b, respectively. Detectors 103a and 103b further detect the RF power transmitted from radiation elements 107a and 107b, respectively, toward RF energy radiation device 100.
Oscillators 101a and 101b correspond to an RF signal generation unit, oscillators 101a and 101b correspond to an RF amplifier, and detectors 103a and 103b correspond to an RF power detection unit.
Hereinafter, the RF power transmitted from RF energy radiation device 100 toward radiation elements 107a and 107b will be referred to as a transmitted wave, whereas the RF power transmitted from elements 107a and 107b toward device 100 will be referred to as a reflected wave.
Circulator 104a transmits the transmitted wave coming from oscillator 101a to radiation element 107a, and transmits the reflected wave coming from radiation element 107a to termination 105a. Similarly, circulator 104b transmits the transmitted wave coming from oscillator 101b to radiation element 107b, and transmits the reflected wave coming from radiation element 107b to termination 105b.
Terminations 105a and 105b have respective impedances, which become the loads of the reflected waves received from circulators 104a and 104b, respectively.
Circulators 104a, 104b and terminations 105a, 105b protect oscillators 101a, 101b from the reflected waves caused due to a load fluctuation of a heating target object (e.g., food) when the object is placed in cavity 108. Radiation elements 107a and 107b radiate RF energy into cavity 108.
RF energy radiation device 100 further includes the following components: temperature sensors 106a, 106b, 106c, and 106d, microprocessor 109, and protection circuit 110.
Temperature sensors 106a and 106b are disposed near power amplifiers 102a and 102b, respectively, and temperature sensors 106c and 106d are disposed near terminations 105a and 105b, respectively. Microprocessor 109 is a controller for controlling RF energy radiation device 100 in accordance with the temperatures detected by temperature sensors 106a to 106d. Protection circuit 110 operates to protect RF energy radiation device 100 if at least one of the temperatures detected by temperature sensors 106a to 106d exceeds a predetermined value.
As shown in
Variable attenuator 301 receives the RF signal from oscillator 101a and adjusts the attenuation amount of the RF signal. Small-signal amplifier 302 amplifies the signal outputted from variable attenuator 301 to some extent. Large-signal amplifier 303 amplifies the signal outputted from small-signal amplifier 302 to a desired output of the RF energy.
The operation and effects of RF energy radiation device 100 with the above-described structure will now be described with reference to
Microprocessor 109 causes oscillators 101a and 101b to oscillate an RF signal with an arbitrary frequency. Microprocessor 109 causes power amplifiers 102a and 102b to output RF energy of a target value. The RF energy output is adjusted to the target value by first adjusting the attenuation amount of variable attenuator 301.
Concerning the transmitted wave, microprocessor 109 adjusts the attenuation amount of variable attenuator 301 so that the RF energy amount is stable even during the operation of RF energy radiation device 100 in accordance with the power values detected by detectors 103a and 103b.
Concerning the reflected wave, microprocessor 109 controls power amplifiers 102a and 102b so that if at least one of the power values detected by detectors 103a and 103b exceeds a first threshold level, the RF energy output can be reduced to reduce the radiation heat from the heat-generating components corresponding to the temperature exceeding the first threshold level.
If at least one of the power values detected by detectors 103a and 103b exceeds an allowable level, protection circuit 110 immediately stops RF energy radiation device 100 by mechanical means, thereby protecting device 100. Protection circuit 110 informs microprocessor 109 that RF energy radiation device 100 has been stopped.
Terminations 105a and 105b are heat-generating components that generate heat when receiving reflected waves. Terminations 105a and 105b have a large temperature rise.
The efficiency of large-signal amplifier 303 can be reduced by changes in the load due to changes in its physical properties during heating and an increase in ambient temperature of RF energy radiation device 100. As a result, large-signal amplifier 303 generates more heat, thereby increasing the temperatures detected by temperature sensors 106a and 106b.
Microprocessor 109 stores a first threshold level (e.g., 85° C.), a second threshold level (e.g., 115° C.), and a third threshold level (e.g., 120° C.) shown in
If at least one of the temperatures detected by temperature sensors 106a and 106b exceeds the first threshold level, microprocessor 109 controls the attenuation amount D (dB) of variable attenuator 301 minutely using software control so that the RF energy output of power amplifiers 102a and 102b is reduced to reduce the radiation heat from the heat-generating components corresponding to the exceeded temperature. For example, the attenuation amount D can be calculated using semiconductor thermal resistance as shown in formula (1) shown below. This can prevent a temperature rise in power amplifiers 102a and 102b.
D=10×log10 Pdet−10×log10(Pdet−Pdown) (1)
where
Pdet(W): the power value of transmitted wave
Pdown(W): (detected temperature (° C.)−85(° C.))×1/Z
Z(° C./W): semiconductor thermal resistance between the junction and the case
If the ambient temperature increases greatly to exceed the second threshold level, microprocessor 109 causes variable attenuator 301 to reduce the RF energy output greatly, thereby reducing the temperature greatly.
Therefore, the second threshold level is set lower when the temperature rising rate is high than when the temperature rising rate is low. This enables reducing the RF energy output before the temperature gets too high during one cycle of the software control.
The second threshold level is automatically set to a level capable of preventing the hardware from stopping the device, considering the rising rate of the temperatures detected by temperature sensors 106a to 106d and the response time (time lag) when the hardware stops RF energy output.
If any of the temperatures rises suddenly to exceed the third threshold level due to a mounting failure such as solder cracking, protection circuit 110 immediately stops RF energy radiation device 100 by using mechanical means, thereby protecting device 100.
As described above, according to the present exemplary embodiment, temperature sensors 106a and 106b are disposed near power amplifiers 102a and 102b, respectively, and temperature sensors 106c and 106d are disposed near terminations 105a and 105b, respectively. The temperatures of these heat-generating components are monitored to control the RF energy output, thereby reducing the temperature rise in power amplifiers 102a, 102b and terminations 105a, 105b. This results in extending the life of the device.
The mounting structure of temperature sensor 106a will now be described as follows. The mounting structure of temperature sensors 106b to 106d will be omitted because it is the same as that of temperature sensor 106a.
As shown in
Temperature sensor 106a is disposed on the solder side of substrate 201 so as to be in contact with base plate 203 made of a thermally conductive material such as copper or aluminum. More specifically, temperature sensor 106a is disposed in an area with a low thermal resistance between the bottom of semiconductor device 202, which is a heat-generating component, and temperature sensor 106a.
This mounting structure enables detecting approximately the actual temperatures of the heat-generating components, and correcting the detected temperature easily because of the low thermal resistance. Thus, the temperatures can be detected with high precision and high response.
This mounting structure enables, in the same manner as the mounting structure shown in
The RF energy radiation device according to the present disclosure is applicable to thawing apparatuses, heating cookers, dryers, etc.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-167408 | Sep 2018 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2019/034935 | 9/5/2019 | WO | 00 |
