The present application is related to U.S. patent application Ser. No. 11/687,032, filed Mar. 16, 2007, which claims the benefit under 35 U.S.C. §119 of U.S. Patent Application Ser. No. 60/782,792, filed Mar. 16, 2006; and is related to U.S. patent application Ser. No. 11/561,277, filed Nov. 17, 2006, which claims the benefit under 35 U.S.C. §119 of U.S. Patent Application Ser. No. 60/737,613, filed Nov. 17, 2005, U.S. Patent Application Ser. No. 60/759,479 filed Jan. 17, 2006, and U.S. Patent Application Ser. No. 60/782,792, filed Mar. 16, 2006; and is related to U.S. patent application Ser. No. 11/209,536, filed Aug. 23, 2005; which is a continuation, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 11/374,282, converted from U.S. provisional application Ser. No. 60/690,697, and filed Jun. 15, 2005; which is a continuation-in-part, and claims the benefit under 35 U.S.C. §120, of U.S. patent application Ser. No. 10/215,190, filed Aug. 9, 2002, now U.S. Pat. No. 6,916,679, issued Jul. 12, 2005; all of which are incorporated herein by reference in their entirety.
The field of this invention includes the device, composition, method of depositing fabrication, and more specifically encapsulation of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.
Typical electrochemical devices comprise multiple electrically active layers such as an anode, cathode, electrolyte, substrate, current collectors, etc. Some layers, such as, for example, an anode layer comprising Lithium, are comprised of materials that are very environmentally sensitive. Such batteries require an encapsulation to protect such environmentally sensitive material. Some schemes used to encapsulate the sensitive layers of electrochemical devices, such encapsulation with gold foil, are expensive. Other schemes encapsulate the device with pouch, for example, made of metal and plastic, that seals around the perimeter of the device. As the temperature changes the residual gas atmosphere within the metal and plastic pouch expands and/or contracts. This expansion and/or contraction may blow out the seals of the metal and plastic pouch or create other problems, thus eliminating the encapsulating benefits of the pouch.
Typical electrochemical devices also have tabs that extend out from the substrate. These tabs provide electrically conductive contact points for the battery. These tabs can be fragile and can break when gripped or secured from the outside and create difficulties when trying to design the encapsulation to maintain a proper seal around the tabs.
Solid-state, thin-film, secondary and primary electrochemical devices, including batteries, have very small thickness dimensions, which may put their electrically conductive contact points, the terminals, in very close layered proximity by a dimension that is mainly defined by the thickness of the seal material. Any physical impact on such a device can entail the risk of bringing these two terminals into contact, which would accidentally electrically short out the device.
Thus, there is a need in the art to provide for better and more robust encapsulating approaches and better approaches to providing electrically conductive contacts, including encapsulation that is substantially thinner than known encapsulation methods while being more about robust against physical impact.
One exemplary embodiment of the present invention includes a battery with a first electrical contact; a bonding layer coupled with the first electrical contact and having an embedded conductor; at least one cell structure; and a second electrical contact, wherein the bonding layer and the at least one cell structure are sandwiched between the first and second contact layers. The bonding layer may be selectively conductive through the embedded conductor. The cell structure may further be in selective electrical contact with the first electrical contact via the embedded conductor.
The first electrical contact may, for example, include an encapsulate metal. The second electrical contact may, for example include a substrate. The bonding layer may be an adhesive material, an insulating material, a plastic, glass, and/or fiberglass. The conductor may be a tab, a wire, multiple wires, a wire mesh, perforated metal, a metal coating applied to the adhesive layer, or a disk. The conductor may be woven within the bonding layer and the bonding layer may include a slit within which the embedded conductor is woven. The bonding layer may be an adhesive material containing one or more conductive portions that may be, for example, conductive powders, bodies or particles applied to one or more selected areas. The first and second contacts may be made from a conductive material such as, for example, gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, and/or oxides, nitrides, and alloys thereof. An insulating layer on the first and/or second contact may also be included. The insulating layer may be, for example, a plastic. The cell structure may include an anode, an electrolyte; a cathode, and a barrier layer. The cathode may, for example, not be annealed or annealed using rapid thermal anneal methods.
Another exemplary embodiment of the present invention includes method of manufacturing a thin film battery having, in no particular order, the steps of creating a selectively conductive bonding layer; coupling the bonding layer with a first contact layer; coupling a first side of a cell structure with a second contact layer; and coupling a second side of the cell structure with the bonding layer. Alternate steps may include creating a cell structure with an anode, cathode, and electrolyte layers; embedding a conductor within the bonding layer; weaving at least one conductive wire through the bonding layer wherein selective portions of the conductive wire are exposed; heating the bonding layer and compressing the conductor within the bonding layer; and insulating the battery with an insulating material. A reinforcement layer including KEVLAR®, fiberglass, plastic, glass or other insulating material may also be embedded within the bonding layer. This reinforcement layer is selectively conductive.
Another exemplary embodiment of the present invention is a device having an electrochemical device with at least one notch; and a metal foil. The metal foil may encapsulate the electrochemical device and a portion of the metal foil extends over the notch providing an electrical contact tab on the metal foil over the notched portion of the electrochemical device. The contact area may also have a hole. The metal foil may have one or more openings. The device may also have a second electrochemical device with a metal foil encapsulating both electrochemical devices. Furthermore, there may be a number of electrochemical devices with metal foils there between. The metal foil encapsulates or lies over the electrochemical device.
The metal foil may further include a cathode element of the electrochemical device. The electrochemical device may have a substrate and the metal foil may also be conductively attached to the substrate.
In any of these exemplary embodiments the metal foil, for example, may be made of stainless steel or any other metallic substance having the necessary characteristics and properties such as a requisite amount of conductivity. The device may, for example, also include an insulating layer. Furthermore, the metal foil may, for example, be less than 100 microns thick, less than 50 microns thick, or less than 25 microns thick.
Another exemplary embodiment of the present invention includes a method of manufacturing an electrochemical device comprising the steps of providing an electrochemical device the may include the steps of providing a substrate; and providing a notch in the electrochemical device. This exemplary embodiment may also, for example, include the step of encapsulating the substrate with a metal foil. In this embodiment, for example, the metal foil extends over the area notched in the step providing a notch and is conductively bonded to the substrate. This embodiment may also further include the step of fabricating a cathode on the substrate by rapid thermal anneal. Also, this exemplary embodiment may include the steps of providing a cathode, anode, electrolyte, current collector, barrier layer, an insulating material on the metal foil, and/or a second electrochemical device wherein the second electrochemical device is encapsulated by the metal foil. This exemplary embodiment may also include the step of providing openings in the metal foil. These openings may be prefabricated in the metal foil.
Another exemplary embodiment of the present invention includes a battery with a first electrical contact, a bonding layer coupled with the first electrical contact and having an embedded conductor; at least one cell structure; and a second electrical contact, wherein the bonding layer and die at least one cell structure are sandwiched between the first and second contact layers. The bonding layer may be selectively conductive through the embedded conductor. The cell structure may further be in selective electrical contact with the first electrical contact via the embedded conductor.
The conductor may comprise elements such as Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, any alloy thereof, and stainless steel. The conductor may also be covered with an electrically insulating film or a mechanically robust film. The insulating film may comprise, for example, Lipon, BeO, B2O3, BN, borate glass, Al2O3, AlN, SiO2, Si3N4, silicate glass, ScOx, TiOx, VOx, CrOx, FeOx, YOx, ZrOx, NbOx, MoOx, HfOx, TaOx, WOx, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, and any combination thereof. The mechanically robust film may comprise, for example, Lipon, borides, carbides, nitrides, oxides, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, and any combination thereof.
The first electrical contact may itself be a conductor or an insulating layer. The insulating layer may be a ceramic comprising BeO, B2O3, BN, borate glass, Al2O3, AlN, SiO2, Si3N4, silicate glass, ScOx, TiOx, VOx, CrOx, FeOx, YOx, ZrOx, NbOx, MoOx, HfOx, TaOx, WOx, and any combination thereof. Also, the insulating layer may be a polymer material comprising polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, and Tenite resins. The insulating layer may also be a composite material whose components may comprise any the materials mentioned above.
The bonding layer may comprise multiple layers (for example, two, three, four, or five layers) and each or multiple layers may comprise an adhesive material. Both the bonding layer and the adhesive material may comprise thermoplastic, thermally set, ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylic acid metallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE). The bonding may further comprise, for example, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, oxide ceramic, nitride ceramic, carbide ceramic, silicate based glass, non-silicate based glass, fiberglass, and any combination thereof. The adhesive material may further comprise, for example, gold-coated polymer spheres, solder-type alloys, carbon, Ni, Cu, Au, Ag, and metallic powders.
Another exemplary embodiment of the present invention includes a battery with a first electrical contact; at least one cell structure; a bonding layer coupled with the first electrical contact; and a second electrical contact, wherein the first electrical contact is mechanically deformed to make electrical contact with the cell structure through the bonding layer, wherein the bonding layer and the cell structure are sandwiched between the first and second contact layers, and wherein the bonding layer may comprise multiple layers.
Another exemplary embodiment of the present invention includes a battery with at least one cell structure; an insulating layer comprising at least one layer; at least one embedded conductor inside the insulating layer wherein the conductor acts as a first electrical contact; and a second electrical contact, wherein the cell structure is sandwiched between the insulating layer and the second contact layer.
Another exemplary embodiment of the present invention includes a battery with more than one cell structures stacked onto each other; wherein each cell structure comprises a first electrical contact, a second electrical contact, and a bonding layer; wherein the bonding layer is sandwiched between the first electrical contact of a first cell structure and the second electrical contact of a neighboring cell structure and comprises more than one layer; wherein the first contact of said first cell structure further comprises at least one embedded conductor. The bonding layer in each cell structure may comprise thermoplastic, thermally set, ethylene ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylic acid inetallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE), polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, oxide ceramic, nitride ceramic, carbide ceramic, silicate glass, non-silicate based glass, fiberglass, and any combination thereof.
Another exemplary embodiment of the present invention includes a battery with at least one cell structure; an insulating layer comprising printed circuitry; at least one embedded conductor inside the insulating layer wherein the conductor acts as a first electrical contact; and a second electrical contact; wherein the insulting layer further comprises at least one layer; and wherein the cell structure is sandwiched between the insulating layer and the second electrical contact. An electrical connection may go over one edge of the insulating layer while creating an electrical contact to both the cell structure and the printed circuitry. The insulating layer may also comprise a ceramic or a polymer material.
Some features and advantages of certain embodiments of the invention are described with reference to the drawings of certain preferred embodiments, which are intended to illustrate examples and not to limit the full scope of the invention.
The accompanying drawings, which are included to provide a further understanding of various embodiments of the invention are incorporated in and constitute a part of this specification, and illustrate exemplary embodiments of the invention that together with the description serve to explain certain principles of the invention. In the drawings:
These and other aspects of the invention will now be described in greater detail in connection with exemplary embodiments that are illustrated in the accompanying drawings.
It is to be understood that the present invention is not limited to the particular methodology, compounds, materials, manufacturing techniques, uses, and applications described herein, as these may vary. It is also to be understood that the terminology used herein is used for the purpose of describing particular embodiments only, and is not intended to limit the scope of the present invention. It must be noted that as used herein and in the appended claims, the singular forms “a,” “an,” and “the” include the plural reference unless the context clearly dictates otherwise. Thus, for example, a reference to “an element” is a reference to one or more elements and includes equivalents thereof known to those skilled in the art. Similarly, for another example, a reference to “a step” or “a means” is a reference to one or more steps or means and may include sub-steps and subservient means. All conjunctions used are to be understood in the most inclusive sense possible. Thus, the word “or” should be understood as having the definition of a logical “or” rather than that of a logical “exclusive or” unless the context clearly necessitates otherwise. Structures described herein are to be understood also to refer to functional equivalents of such structures. Language that may be construed to express approximation should be so understood unless the context clearly dictates otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which this invention belongs. Preferred methods, techniques, devices, and materials are described, although any methods, techniques, devices, or materials similar or equivalent to those described herein may be used in the practice or testing of the present invention. Structures described herein are to be understood also to refer to functional equivalents of such structures.
All patents and other publications identified are incorporated herein by reference for the purpose of describing and disclosing. For example, the methodologies described in such publications that might be used in connection with the present invention. These publications are provided solely for their disclosure prior to the filing date of the present application. Nothing in this regard should be construed as an admission that the inventors are not entitled to antedate such disclosure by virtue of prior invention or for any other reason.
The metal foil may, for example, be less than 100 microns in thickness. In another embodiment the metal foil may be less than 50 microns and in a specific embodiment the metal foil may be less than 25 microns.
The electrochemical device 130 may comprise at least one notch 131. The electrochemical device 130 shown in
The metal foil layer 110 may be adapted to encapsulate the electrochemical device 130. This encapsulation may, for example, protect the electrochemical device 130 from damaging environmental effects. For example, many electrochemical devices comprise environmentally sensitive materials such as Lithium. These materials can be extremely reactive with air and moisture, and may degrade when exposed to such environments. Accordingly, the metal foil encapsulate layer 110 may protect environmentally sensitive materials in the electrochemical device from air and/or moisture.
The metal foil encapsulate layer 110 in an exemplary embodiment of the present invention may lie over a substrate layer in the electrochemical device 130. An electrochemical device may include a number of layers, for example, a substrate, cathode, electrolyte, and anode. Such a device may be encapsulated with a metal foil deposed on the substrate, and may also include contact tabs. The metal foil, therefore, may provide contacts that are secure, durable and may be incorporated at any location in the device. Because the contacts are part of the metal foil, they are less likely to break or shear from the substrate.
The metal foil layer, in an exemplary embodiment of the present invention, may comprise the cathode.
In an exemplary embodiment of the present invention, a metal foil may lay over an electrochemical device. This metal foil encapsulates the electrochemical device and protects it from environmental harm. The metal foil also provides tabs that are conductively contacted with the substrate of the device.
In an exemplary embodiment of the present invention, the electrochemical device comprises LiCoO2. In this embodiment, the device is treated with a rapid thermal anneal. For example, the device is brought up to approximately 700° C. over a period of six minutes. The device is then held at this temperature for approximately five minutes and then quickly cooled to room temperature in about six minutes. This rapid thermal annealing crystallizes the LiCoO2 so that it may be used without a barrier layer. The period of time may vary up to 30 minutes or even down to 10 seconds.
The conductor 1120 may be placed within the bonding layer 1110 in many different ways. For example, a metal tab, a metal wire, multiple metal wires, a metal wire mesh, perforated metal foil, perforated metal, a metal coating applied to the adhesive layer, a metallic disk, a metallically coated fiberglass or combinations thereof may be used. In each of these examples, the conductor 1120 can provide electrical conduction between the cell structure 1115 and the first contact 1101 and yet provide insulation between the two contacts 1101, 1105. In some embodiments the conductor 1120 may be woven within the bonding layer 1110. The conductor 1115 may be, for example, disks embedded within the bonding layer 1110. In some embodiments slits within the bonding layer 1110 may be made in order to weave or place the conductor 1120 through the bonding layer 1110. Also, for example, holes or other means may be used to place the conductor 1120 through the bonding layer 1110.
In an exemplary embodiment, a reinforcement layer may be placed within the insulating layer. For example, a fiberglass material may cover half of one surface of the insulating layer, woven through the layer and then cover the other half of the bonding layer. Such a layer of fiberglass without a conductive coating would insulate the materials placed between. The fiberglass may be coated in a localized area with a conductive material. Such conductive coatings can coat the fiberglass area at the top and bottom surface of the bonding layer. In such an embodiment, for example, the fiberglass would conduct between the upper contact and the cell. Conductive material may be disposed on the fiberglass using ink jet, silk screen, plasma deposition, e-beam deposition, spray and/or brush methods. Other materials may be used rather than fiberglass, such as, for example, KEVLAR®, plastic, glass or other insulating materials.
An exemplary embodiment of the present invention provides for selective contact between the first contact and the cell structure through holes in the bonding layer. In such an embodiment, holes in the bonding layer may allow the first contact and cell structure to remain in contact. The layers may be, for example, pressed together to create a contact. Alternatively, conductive glues or inks may be applied in or near the hole area in the bonding layer to make the contact between the layers. Lithium may also be used as a conductive material.
The conductor 1120, for example, may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, or oxides, nitrides, and alloys thereof.
For purposes of explaining the exemplary embodiments shown in
The resultant bonding layer 1110 from
The first and second contacts 1101, 1105 of this embodiment can be made of a conductive metal. For example, the contact or contacts may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, or oxides, nitrides, and alloys thereof. Other conductive materials may also be used.
While the above examples show a conductive material 1120-1123 provided in an opening in the bonding layer 1110, such as the slit 1130 shown in
In this exemplary embodiment, the lower layer 1110B can be, for example, a copolymer, which may be a thermoplastic or thermally set. In another exemplary embodiment, the lower layer 1110B can be an ethylene methacrylic acid (E/MAA) copolymer. In still another exemplary embodiment, the lower layer 1110B can be an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid is neutralized with metal ions such as zinc (Zn) or sodium (Na). In still another exemplary embodiment, the lower layer 1110B may comprise at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
In this exemplary embodiment, the upper layer 1110A can comprise at least one polymer type selected from the group of polyamides (e.g., Nylon), polyimides (e.g., Kapton), polyethylene terephthalates (e.g., Mylar), para-aramids (e.g., Kevlar), polyethylenes, high-density polyethylenes (e.g., Valeron), Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides (PVC and CPVC), Acetal Delrin, phenolics, fluoroplastics (e.g., Teflon), polyurethanes, polystyrenes (e.g., acrylonitrile-butadiene-styrenes [ABS]), Keton PEEK, Tenite resins (e.g., Butyrate), silicate or non-silicate based glass, fiberglass, oxide ceramic (e.g., ZrO2), nitride ceramic (e.g., AlN), carbide ceramic (e.g., SiC), or a combination/modification thereof.
In any of these exemplary embodiments, the topmost layer 1110D can be, for example, a copolymer, an ethylene methacrylic acid (E/MAA) copolymer, or an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid is neutralized with metal ions such as zinc (Zn) or sodium (Na). In some other exemplary embodiments, the topmost layer 1110D may comprise at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
In any of these exemplary embodiments, the HAPR layer 1110E, may comprise at least one polymer type selected from the group of polyamides (e.g., Nylon), polyimides (e.g., Kapton), polyethylene terephthalates (e.g., Mylar), para-aramids (e.g., Kevlar), polyethylenes, high-density polyethylenes (e.g., Valeron), Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides (PVC and CPVC), Acetal Delrin, phenolics, fluoroplastics (e.g., Teflon), polyurethanes, polystyrenes (e.g., acrylonitrile-butadiene-styrenes [ABS]), Keton PEEK, Tenite resins (e.g., Butyrate), oxide ceramic (e.g., ZrO2), nitride ceramic (e.g., AlN), carbide ceramic (e.g., SiC), silicate or non-silicate based glass, fiberglass, or a combination/modification thereof.
In any of these exemplary embodiments, the lowest layer 1110F may be, for example, a copolymer, an ethylene methacrylic acid (E/MAA) copolymer, or an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid may be neutralized with metal ions such as zinc (Zn) or sodium (Na). In some other exemplary embodiments, the lowest layer 1110F may comprise at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
In any of these exemplary embodiments, the conductor 1120 may, for example, comprise at least one element selected from the group of Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, and is made by rolling, electroforming, drawing or any other materials processing technique or any vacuum deposition technique, such as sputtering, evaporation or CVD, or an electrochemical process (e.g., electroplating or electroless plating).
In this exemplary embodiment, the non-conducting layer 1101 may also have printed circuitry 2305 and the cell structure 1115 may be connected into the circuitry 2305 through an opening 2301 through the non-conducting layer 1101 either through the conductor 1120 or by the use of an isotropic or anisotropic conducting adhesive. The opening may be created either by mechanical means or masking/etching. In a different exemplary embodiment, the non-conducting layer 1101 may be equipped with at least one electrical connection layer that goes over at least one edge of the non-conducting layer 1101 and makes electrical contact with both the cell structure 1115 and the printed circuitry 2305 which are sandwiching the non-conducting layer 1101. The electrical connection layer may comprise a conducting medium comprising Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, wherein Ni or Cu are the most preferred material selections. The non-conducting layer 1101 may provide another protective metallic layer, with or without a bonding layer in between the non-conducting and protective layers. The bonding layer may comprise at least one polymer type selected from the group of ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylic acid metal late (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
The bonding layer 1110 in this exemplary embodiment may be used as a heat and pressure resilient layer, without any further reinforcements, because the non-conducting layer does not cause any electrical shorting to the second contact 1105 when the bonding layer is damaged. In another exemplary embodiment, when the non-conductor layer material may tend to react with the cell structure material, a reinforcement structure (a two-layer, three-layer, four-layer, or five layer structure, as illustrated above) may be used in place of the bonding layer.
For various purposes, the first contact 1101 may be eliminated for this invention. In one exemplary embodiment, when the first contact layer 1101 is eliminated, the conductor 1120 could be used for electrically contacting the cell structure 1115 for termination purposes.
The first contact 1101 may be covered by an electrically insulating and mechanically robust film comprising Lipon, borides, carbides, nitrides, oxides, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, and/or Tenite resins. The borides, carbides, nitrides, and/or oxides, may be configured with boron, aluminum, silicon, Ti, Ta, Zr, Hf or a similar element, or a modification/combination thereof. The insulating film may mechanically and electrically protect the first contact 1101 from damages. For termination purposes, a recess may be created, by a shadow mask during or after the formation of the insulation film, in the first contact 1101 in order for it to make contact with the conductor 1120. To achieve the same purpose, another conductor may also be used in the central portion for contacting the conductor 1120. Furthermore, an isotropic or anisotropic conducting adhesive may be used in the central portion for contacting the conductor 1120 for termination purposes. The isotropic or anisotropic adhesive may comprise at least one adhesive selected from the group of ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylic acid metallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE) that contains gold-coated polymer spheres, solder-type alloys, or solid metal powders such as carbon, Ni, Au, Cu, or Ag.
The conductor 1120 may not be a necessary component of the current invention. The contact between the first contact 1101 and the cell structure 1115 can be made by applying pressure by a mandrel in the central portion of the first contact 1101 so that a depression is created in the first contact 1101 thereby creating an electrical contact. The bonding layer 1110 can be removed before creating the depression of 1101 by the mandrel so as to create a more robust electrical contact between the first contact and the cell structure.
The embodiments and examples described above are exemplary only. One skilled in the art may recognize variations from the embodiments specifically described here, which are intended to be within the scope of this disclosure and invention. As such, the invention is limited only by the following claims. Thus, it is intended that the present invention cover the modifications of this invention provided they come within the scope of the appended claims and their equivalents.
Number | Name | Date | Kind |
---|---|---|---|
712316 | Loppe et al. | Oct 1902 | A |
1712316 | Loppe et al. | Oct 1902 | A |
2970180 | Urry | Jan 1961 | A |
3309302 | Heil | Mar 1967 | A |
3616403 | Collins et al. | Oct 1971 | A |
3790432 | Fletcher et al. | Feb 1974 | A |
3797091 | Gavin | Mar 1974 | A |
3850604 | Klein | Nov 1974 | A |
3939008 | Longo et al. | Feb 1976 | A |
4082569 | Evans, Jr. | Apr 1978 | A |
4111523 | Kaminow et al. | Sep 1978 | A |
4127424 | Ullery, Jr. | Nov 1978 | A |
4226924 | Kimura et al. | Oct 1980 | A |
4283216 | Brereton | Aug 1981 | A |
4318938 | Barnett et al. | Mar 1982 | A |
4328297 | Bilhorn | May 1982 | A |
4395713 | Nelson et al. | Jul 1983 | A |
4437966 | Hope et al. | Mar 1984 | A |
4442144 | Pipkin | Apr 1984 | A |
4467236 | Kolm et al. | Aug 1984 | A |
4481265 | Ezawa et al. | Nov 1984 | A |
4518661 | Rippere | May 1985 | A |
4555456 | Kanehori et al. | Nov 1985 | A |
4572873 | Kanehori et al. | Feb 1986 | A |
4587225 | Tsukuma et al. | May 1986 | A |
4619680 | Nourshargh et al. | Oct 1986 | A |
4645726 | Hiratani et al. | Feb 1987 | A |
4664993 | Sturgis et al. | May 1987 | A |
4668593 | Sammells | May 1987 | A |
RE32449 | Claussen et al. | Jun 1987 | E |
4672586 | Shimohigashi et al. | Jun 1987 | A |
4710940 | Sipes, Jr. | Dec 1987 | A |
4728588 | Noding et al. | Mar 1988 | A |
4740431 | Little | Apr 1988 | A |
4756717 | Sturgis et al. | Jul 1988 | A |
4785459 | Baer | Nov 1988 | A |
4826743 | Nazri | May 1989 | A |
4865428 | Corrigan | Sep 1989 | A |
4878094 | Balkanski | Oct 1989 | A |
4903326 | Zakman et al. | Feb 1990 | A |
4915810 | Kestigian et al. | Apr 1990 | A |
4964877 | Keister et al. | Oct 1990 | A |
4977007 | Kondo et al. | Dec 1990 | A |
4978437 | Wirz | Dec 1990 | A |
5006737 | Fay | Apr 1991 | A |
5019467 | Fujiwara | May 1991 | A |
5030331 | Sato | Jul 1991 | A |
5035965 | Sangyoji et al. | Jul 1991 | A |
5055704 | Link et al. | Oct 1991 | A |
5057385 | Hope et al. | Oct 1991 | A |
5085904 | Deak et al. | Feb 1992 | A |
5096852 | Hobson | Mar 1992 | A |
5100821 | Fay | Mar 1992 | A |
5107538 | Benton et al. | Apr 1992 | A |
5110694 | Nagasubramanian et al. | May 1992 | A |
5110696 | Shokoohi et al. | May 1992 | A |
5119269 | Nakayama | Jun 1992 | A |
5119460 | Bruce et al. | Jun 1992 | A |
5124782 | Hundt et al. | Jun 1992 | A |
5147985 | DuBrucq | Sep 1992 | A |
5153710 | McCain | Oct 1992 | A |
5169408 | Biggerstaff et al. | Dec 1992 | A |
5171413 | Arntz et al. | Dec 1992 | A |
5173271 | Chen et al. | Dec 1992 | A |
5174876 | Buchal et al. | Dec 1992 | A |
5180645 | Moré | Jan 1993 | A |
5187564 | McCain | Feb 1993 | A |
5196041 | Tumminelli et al. | Mar 1993 | A |
5196374 | Hundt et al. | Mar 1993 | A |
5200029 | Bruce et al. | Apr 1993 | A |
5202201 | Meunier et al. | Apr 1993 | A |
5206925 | Nakazawa et al. | Apr 1993 | A |
5208121 | Yahnke et al. | May 1993 | A |
5217828 | Sangyoji et al. | Jun 1993 | A |
5221891 | Janda et al. | Jun 1993 | A |
5225288 | Beeson et al. | Jul 1993 | A |
5227264 | Duval et al. | Jul 1993 | A |
5237439 | Misono et al. | Aug 1993 | A |
5252194 | Demaray et al. | Oct 1993 | A |
5262254 | Koksbang et al. | Nov 1993 | A |
5273608 | Nath | Dec 1993 | A |
5287427 | Atkins et al. | Feb 1994 | A |
5296089 | Chen et al. | Mar 1994 | A |
5300461 | Ting | Apr 1994 | A |
5302474 | Shackle | Apr 1994 | A |
5303319 | Ford et al. | Apr 1994 | A |
5306569 | Hiraki | Apr 1994 | A |
5307240 | McMahon | Apr 1994 | A |
5309302 | Vollmann | May 1994 | A |
5314765 | Bates | May 1994 | A |
5326652 | Lake | Jul 1994 | A |
5326653 | Chang | Jul 1994 | A |
5338624 | Gruenstern et al. | Aug 1994 | A |
5338625 | Bates et al. | Aug 1994 | A |
5342709 | Yahnke et al. | Aug 1994 | A |
5355089 | Treger et al. | Oct 1994 | A |
5360686 | Peled et al. | Nov 1994 | A |
5362579 | Rossoll et al. | Nov 1994 | A |
5381262 | Arima et al. | Jan 1995 | A |
5387482 | Anani | Feb 1995 | A |
5401595 | Kagawa et al. | Mar 1995 | A |
5403680 | Otagawa et al. | Apr 1995 | A |
5411537 | Munshi et al. | May 1995 | A |
5411592 | Ovshinsky et al. | May 1995 | A |
5419982 | Tura et al. | May 1995 | A |
5427669 | Drummond | Jun 1995 | A |
5435826 | Sakakibara et al. | Jul 1995 | A |
5437692 | Dasgupta et al. | Aug 1995 | A |
5445856 | Chaloner-Gill | Aug 1995 | A |
5445906 | Hobson et al. | Aug 1995 | A |
5448110 | Tuttle et al. | Sep 1995 | A |
5449576 | Anani | Sep 1995 | A |
5455126 | Bates et al. | Oct 1995 | A |
5457569 | Liou et al. | Oct 1995 | A |
5458995 | Behl et al. | Oct 1995 | A |
5464692 | Huber | Nov 1995 | A |
5464706 | Dasgupta et al. | Nov 1995 | A |
5470396 | Mongon et al. | Nov 1995 | A |
5472795 | Atita | Dec 1995 | A |
5475528 | LaBorde | Dec 1995 | A |
5478456 | Humpal et al. | Dec 1995 | A |
5483613 | Bruce et al. | Jan 1996 | A |
5493177 | Muller et al. | Feb 1996 | A |
5498489 | Dasgupta et al. | Mar 1996 | A |
5499207 | Miki et al. | Mar 1996 | A |
5501918 | Gruenstern et al. | Mar 1996 | A |
5504041 | Summerfelt | Apr 1996 | A |
5512147 | Bates et al. | Apr 1996 | A |
5512387 | Ovshinsky | Apr 1996 | A |
5512389 | Dasgupta et al. | Apr 1996 | A |
5538796 | Schaffer et al. | Jul 1996 | A |
5540742 | Sangyoji et al. | Jul 1996 | A |
5547780 | Kagawa et al. | Aug 1996 | A |
5547781 | Blonsky et al. | Aug 1996 | A |
5547782 | Dasgupta et al. | Aug 1996 | A |
5552242 | Ovshinsky et al. | Sep 1996 | A |
5555127 | Abdelkader et al. | Sep 1996 | A |
5561004 | Bates et al. | Oct 1996 | A |
5563979 | Bruce et al. | Oct 1996 | A |
5565071 | Demaray et al. | Oct 1996 | A |
5567210 | Bates et al. | Oct 1996 | A |
5569520 | Bates | Oct 1996 | A |
5582935 | Dasgupta et al. | Dec 1996 | A |
5591520 | Migliorini et al. | Jan 1997 | A |
5597660 | Bates et al. | Jan 1997 | A |
5597661 | Takeuchi et al. | Jan 1997 | A |
5599355 | Nagasubramanian et al. | Feb 1997 | A |
5601952 | Dasgupta et al. | Feb 1997 | A |
5603816 | Demaray et al. | Feb 1997 | A |
5607560 | Hirabayashi et al. | Mar 1997 | A |
5607789 | Treger et al. | Mar 1997 | A |
5612152 | Bates | Mar 1997 | A |
5612153 | Moulton et al. | Mar 1997 | A |
5613995 | Bhandarkar et al. | Mar 1997 | A |
5616933 | Li | Apr 1997 | A |
5618382 | Mintz et al. | Apr 1997 | A |
5625202 | Chai | Apr 1997 | A |
5637418 | Brown et al. | Jun 1997 | A |
5643480 | Gustavsson et al. | Jul 1997 | A |
5644207 | Lew et al. | Jul 1997 | A |
5645626 | Edlund et al. | Jul 1997 | A |
5645960 | Scrosati et al. | Jul 1997 | A |
5654054 | Tropsha et al. | Aug 1997 | A |
5654984 | Hershbarger et al. | Aug 1997 | A |
5658652 | Sellergren | Aug 1997 | A |
5660700 | Shimizu et al. | Aug 1997 | A |
5665490 | Takeuchi et al. | Sep 1997 | A |
5667538 | Bailey | Sep 1997 | A |
5677784 | Harris | Oct 1997 | A |
5679980 | Summerfelt | Oct 1997 | A |
5681666 | Treger et al. | Oct 1997 | A |
5686360 | Harvey, III et al. | Nov 1997 | A |
5689522 | Beach | Nov 1997 | A |
5693956 | Shi et al. | Dec 1997 | A |
5702829 | Paidassi et al. | Dec 1997 | A |
5705293 | Hobson | Jan 1998 | A |
5716728 | Smesko | Feb 1998 | A |
5718813 | Drummond et al. | Feb 1998 | A |
5719976 | Henry et al. | Feb 1998 | A |
5721067 | Jacobs et al. | Feb 1998 | A |
RE35746 | Lake | Mar 1998 | E |
5731661 | So et al. | Mar 1998 | A |
5738731 | Shindo et al. | Apr 1998 | A |
5742094 | Ting | Apr 1998 | A |
5755938 | Fukui et al. | May 1998 | A |
5755940 | Shindo | May 1998 | A |
5757126 | Harvey, III et al. | May 1998 | A |
5762768 | Goy et al. | Jun 1998 | A |
5763058 | Isen et al. | Jun 1998 | A |
5771562 | Harvey, III et al. | Jun 1998 | A |
5776278 | Tuttle et al. | Jul 1998 | A |
5779839 | Tuttle et al. | Jul 1998 | A |
5790489 | O'Connor | Aug 1998 | A |
5792550 | Phillips et al. | Aug 1998 | A |
5805223 | Shikakura et al. | Sep 1998 | A |
5811177 | Shi et al. | Sep 1998 | A |
5814195 | Lehan et al. | Sep 1998 | A |
5830330 | Lantsman | Nov 1998 | A |
5831262 | Greywall et al. | Nov 1998 | A |
5834137 | Zhang et al. | Nov 1998 | A |
5841931 | Foresi et al. | Nov 1998 | A |
5842118 | Wood, Jr. | Nov 1998 | A |
5845990 | Hymer | Dec 1998 | A |
5847865 | Gopinath et al. | Dec 1998 | A |
5849163 | Ichikawa et al. | Dec 1998 | A |
5851896 | Summerfelt | Dec 1998 | A |
5853830 | McCaulley et al. | Dec 1998 | A |
5855744 | Halsey et al. | Jan 1999 | A |
5856705 | Ting | Jan 1999 | A |
5864182 | Matsuzaki | Jan 1999 | A |
5865860 | Delnick | Feb 1999 | A |
5870273 | Sogabe et al. | Feb 1999 | A |
5874184 | Takeuchi et al. | Feb 1999 | A |
5882721 | Delnick | Mar 1999 | A |
5882946 | Otani | Mar 1999 | A |
5889383 | Teich | Mar 1999 | A |
5895731 | Clingempeel | Apr 1999 | A |
5897522 | Nitzan | Apr 1999 | A |
5900057 | Buchal et al. | May 1999 | A |
5909346 | Malhotra et al. | Jun 1999 | A |
5916704 | Lewin et al. | Jun 1999 | A |
5923964 | Li | Jul 1999 | A |
5930046 | Solberg et al. | Jul 1999 | A |
5930584 | Sun et al. | Jul 1999 | A |
5942089 | Sproul et al. | Aug 1999 | A |
5948215 | Lantsman | Sep 1999 | A |
5948464 | Delnick | Sep 1999 | A |
5948562 | Fulcher et al. | Sep 1999 | A |
5952778 | Haskal et al. | Sep 1999 | A |
5955217 | Van Lerberghe | Sep 1999 | A |
5961672 | Skotheim et al. | Oct 1999 | A |
5961682 | Lee et al. | Oct 1999 | A |
5966491 | DiGiovanni | Oct 1999 | A |
5970393 | Khorrami et al. | Oct 1999 | A |
5973913 | McEwen et al. | Oct 1999 | A |
5977582 | Flemming et al. | Nov 1999 | A |
5982144 | Johnson et al. | Nov 1999 | A |
5985484 | Young et al. | Nov 1999 | A |
5985485 | Ovshinsky et al. | Nov 1999 | A |
6000603 | Koskenmaki et al. | Dec 1999 | A |
6001224 | Drummond et al. | Dec 1999 | A |
6004660 | Topolski et al. | Dec 1999 | A |
6007945 | Jacobs et al. | Dec 1999 | A |
6013949 | Tuttle | Jan 2000 | A |
6019284 | Freeman et al. | Feb 2000 | A |
6023610 | Wood, Jr. | Feb 2000 | A |
6024844 | Drummond et al. | Feb 2000 | A |
6025094 | Visco et al. | Feb 2000 | A |
6028990 | Shahani et al. | Feb 2000 | A |
6030421 | Gauthier et al. | Feb 2000 | A |
6033768 | Muenz et al. | Mar 2000 | A |
6042965 | Nestler et al. | Mar 2000 | A |
6045626 | Yano et al. | Apr 2000 | A |
6045652 | Tuttle et al. | Apr 2000 | A |
6045942 | Miekka et al. | Apr 2000 | A |
6046081 | Kuo | Apr 2000 | A |
6046514 | Rouillard et al. | Apr 2000 | A |
6048372 | Mangahara et al. | Apr 2000 | A |
6051114 | Yao et al. | Apr 2000 | A |
6051296 | McCaulley et al. | Apr 2000 | A |
6052397 | Jeon et al. | Apr 2000 | A |
6057557 | Ichikawa | May 2000 | A |
6058233 | Dragone | May 2000 | A |
6071323 | Kawaguchi | Jun 2000 | A |
6075973 | Greeff et al. | Jun 2000 | A |
6077106 | Mish | Jun 2000 | A |
6077642 | Ogata et al. | Jun 2000 | A |
6078791 | Tuttle et al. | Jun 2000 | A |
6080508 | Dasgupta et al. | Jun 2000 | A |
6080643 | Noguchi et al. | Jun 2000 | A |
6093944 | VanDover | Jul 2000 | A |
6094292 | Goldner et al. | Jul 2000 | A |
6096569 | Matsuno et al. | Aug 2000 | A |
6100108 | Mizuno et al. | Aug 2000 | A |
6106933 | Nagai et al. | Aug 2000 | A |
6110531 | Paz de Araujo et al. | Aug 2000 | A |
6115616 | Halperin et al. | Sep 2000 | A |
6117279 | Smolanoff et al. | Sep 2000 | A |
6118426 | Albert et al. | Sep 2000 | A |
6120890 | Chen et al. | Sep 2000 | A |
6129277 | Grant et al. | Oct 2000 | A |
6133670 | Rodgers et al. | Oct 2000 | A |
6137671 | Staffiere | Oct 2000 | A |
6144916 | Wood, Jr. et al. | Nov 2000 | A |
6146225 | Sheats et al. | Nov 2000 | A |
6148503 | Delnick et al. | Nov 2000 | A |
6156452 | Kozuki et al. | Dec 2000 | A |
6157765 | Bruce et al. | Dec 2000 | A |
6159635 | Dasgupta et al. | Dec 2000 | A |
6160373 | Dunn et al. | Dec 2000 | A |
6162709 | Raoux et al. | Dec 2000 | A |
6165566 | Tropsha | Dec 2000 | A |
6168884 | Neudecker et al. | Jan 2001 | B1 |
6169474 | Greeff et al. | Jan 2001 | B1 |
6175075 | Shiotsuka et al. | Jan 2001 | B1 |
6176986 | Watanabe et al. | Jan 2001 | B1 |
6181283 | Johnson et al. | Jan 2001 | B1 |
6192222 | Greeff et al. | Feb 2001 | B1 |
6197167 | Tanaka | Mar 2001 | B1 |
6198217 | Suzuki et al. | Mar 2001 | B1 |
6204111 | Uemoto et al. | Mar 2001 | B1 |
6210544 | Sasaki | Apr 2001 | B1 |
6210832 | Visco et al. | Apr 2001 | B1 |
6214061 | Visco et al. | Apr 2001 | B1 |
6214660 | Uemoto et al. | Apr 2001 | B1 |
6218049 | Bates et al. | Apr 2001 | B1 |
6220516 | Tuttle et al. | Apr 2001 | B1 |
6223317 | Pax et al. | Apr 2001 | B1 |
6228532 | Tsuji et al. | May 2001 | B1 |
6229987 | Greeff et al. | May 2001 | B1 |
6232242 | Hata et al. | May 2001 | B1 |
6235432 | Kono et al. | May 2001 | B1 |
6236793 | Lawrence et al. | May 2001 | B1 |
6242128 | Tura et al. | Jun 2001 | B1 |
6242129 | Johnson | Jun 2001 | B1 |
6242132 | Neudecker et al. | Jun 2001 | B1 |
6248291 | Nakagama et al. | Jun 2001 | B1 |
6248481 | Visco et al. | Jun 2001 | B1 |
6248640 | Nam | Jun 2001 | B1 |
6249222 | Gehlot | Jun 2001 | B1 |
6252564 | Albert et al. | Jun 2001 | B1 |
6258252 | Miyasaka et al. | Jul 2001 | B1 |
6261917 | Quek et al. | Jul 2001 | B1 |
6264709 | Yoon et al. | Jul 2001 | B1 |
6265652 | Kurata et al. | Jul 2001 | B1 |
6268695 | Affinito | Jul 2001 | B1 |
6271053 | Kondo | Aug 2001 | B1 |
6271793 | Brady et al. | Aug 2001 | B1 |
6271801 | Tuttle et al. | Aug 2001 | B2 |
6280585 | Obinata et al. | Aug 2001 | B1 |
6280875 | Kwak et al. | Aug 2001 | B1 |
6281142 | Basceri et al. | Aug 2001 | B1 |
6284406 | Xing et al. | Sep 2001 | B1 |
6287986 | Mihara | Sep 2001 | B1 |
6289209 | Wood, Jr. | Sep 2001 | B1 |
6290821 | McLeod | Sep 2001 | B1 |
6290822 | Fleming et al. | Sep 2001 | B1 |
6291098 | Shibuya et al. | Sep 2001 | B1 |
6294722 | Kondo et al. | Sep 2001 | B1 |
6296949 | Bergstresser et al. | Oct 2001 | B1 |
6296967 | Jacobs et al. | Oct 2001 | B1 |
6296971 | Hara | Oct 2001 | B1 |
6300215 | Shin | Oct 2001 | B1 |
6302939 | Rabin | Oct 2001 | B1 |
6306265 | Fu et al. | Oct 2001 | B1 |
6316563 | Naijo et al. | Nov 2001 | B2 |
6323416 | Komori et al. | Nov 2001 | B1 |
6324211 | Ovard et al. | Nov 2001 | B1 |
6325294 | Tuttle et al. | Dec 2001 | B2 |
6329213 | Tuttle et al. | Dec 2001 | B1 |
6339236 | Tomii et al. | Jan 2002 | B1 |
6340880 | Higashijima et al. | Jan 2002 | B1 |
6344366 | Bates | Feb 2002 | B1 |
6344419 | Forster et al. | Feb 2002 | B1 |
6344795 | Gehlot | Feb 2002 | B1 |
6350353 | Gopalraja et al. | Feb 2002 | B2 |
6351630 | Wood, Jr. | Feb 2002 | B2 |
6356230 | Greef et al. | Mar 2002 | B1 |
6356694 | Weber | Mar 2002 | B1 |
6356764 | Ovard et al. | Mar 2002 | B1 |
6358810 | Dornfest et al. | Mar 2002 | B1 |
6360954 | Barnardo | Mar 2002 | B1 |
6361662 | Chiba et al. | Mar 2002 | B1 |
6365300 | Ota et al. | Apr 2002 | B1 |
6365319 | Heath et al. | Apr 2002 | B1 |
6368275 | Sliwa et al. | Apr 2002 | B1 |
6369316 | Plessing et al. | Apr 2002 | B1 |
6372383 | Lee et al. | Apr 2002 | B1 |
6372386 | Cho et al. | Apr 2002 | B1 |
6373224 | Goto et al. | Apr 2002 | B1 |
6375780 | Tuttle et al. | Apr 2002 | B1 |
6376027 | Lee et al. | Apr 2002 | B1 |
6379835 | Kucherovsky et al. | Apr 2002 | B1 |
6379842 | Mayer | Apr 2002 | B1 |
6379846 | Terahara et al. | Apr 2002 | B1 |
6380477 | Curtin | Apr 2002 | B1 |
6384573 | Dunn | May 2002 | B1 |
6387563 | Bates | May 2002 | B1 |
6391166 | Wang | May 2002 | B1 |
6392565 | Brown | May 2002 | B1 |
6394598 | Kaiser | May 2002 | B1 |
6395430 | Cho et al. | May 2002 | B1 |
6396001 | Nakamura | May 2002 | B1 |
6398824 | Johnson | Jun 2002 | B1 |
6399241 | Hara et al. | Jun 2002 | B1 |
6402039 | Freeman et al. | Jun 2002 | B1 |
6402795 | Chu et al. | Jun 2002 | B1 |
6402796 | Johnson | Jun 2002 | B1 |
6409965 | Nagata et al. | Jun 2002 | B1 |
6413284 | Chu et al. | Jul 2002 | B1 |
6413285 | Chu et al. | Jul 2002 | B1 |
6413382 | Wang et al. | Jul 2002 | B1 |
6413645 | Graff et al. | Jul 2002 | B1 |
6413676 | Munshi | Jul 2002 | B1 |
6414626 | Greeff et al. | Jul 2002 | B1 |
6416598 | Sircar | Jul 2002 | B1 |
6420961 | Bates et al. | Jul 2002 | B1 |
6422698 | Kaiser | Jul 2002 | B2 |
6423106 | Bates | Jul 2002 | B1 |
6423776 | Akkapeddi et al. | Jul 2002 | B1 |
6426163 | Pasquier et al. | Jul 2002 | B1 |
6432577 | Shul et al. | Aug 2002 | B1 |
6432584 | Visco et al. | Aug 2002 | B1 |
6433380 | Shin | Aug 2002 | B2 |
6433465 | McKnight et al. | Aug 2002 | B1 |
6436156 | Wandeloski et al. | Aug 2002 | B1 |
6437231 | Kurata et al. | Aug 2002 | B2 |
6444336 | Jia et al. | Sep 2002 | B1 |
6444355 | Murai et al. | Sep 2002 | B1 |
6444368 | Hikmet et al. | Sep 2002 | B1 |
6444750 | Touhsaent | Sep 2002 | B1 |
6459418 | Comiskey et al. | Oct 2002 | B1 |
6459726 | Ovard et al. | Oct 2002 | B1 |
6466771 | Wood, Jr. | Oct 2002 | B2 |
6475668 | Hosokawa et al. | Nov 2002 | B1 |
6480699 | Lovoi | Nov 2002 | B1 |
6481623 | Grant et al. | Nov 2002 | B1 |
6488822 | Moslehi | Dec 2002 | B1 |
6494999 | Herrera et al. | Dec 2002 | B1 |
6495283 | Yoon et al. | Dec 2002 | B1 |
6497598 | Affinito | Dec 2002 | B2 |
6500287 | Azens et al. | Dec 2002 | B1 |
6503661 | Park et al. | Jan 2003 | B1 |
6503831 | Speakman | Jan 2003 | B2 |
6506289 | Demaray et al. | Jan 2003 | B2 |
6511516 | Johnson et al. | Jan 2003 | B1 |
6511615 | Dawes et al. | Jan 2003 | B1 |
6517968 | Johnson et al. | Feb 2003 | B2 |
6522067 | Graff et al. | Feb 2003 | B1 |
6524466 | Bonaventura et al. | Feb 2003 | B1 |
6524750 | Mansuetto | Feb 2003 | B1 |
6525976 | Johnson | Feb 2003 | B1 |
6528212 | Kusumoto et al. | Mar 2003 | B1 |
6529827 | Beason et al. | Mar 2003 | B1 |
6533907 | Demaray et al. | Mar 2003 | B2 |
6537428 | Xiong et al. | Mar 2003 | B1 |
6538211 | St. Lawrence et al. | Mar 2003 | B2 |
6541147 | McLean et al. | Apr 2003 | B1 |
6548912 | Graff et al. | Apr 2003 | B1 |
6551745 | Moutsios et al. | Apr 2003 | B2 |
6558836 | Whitacre et al. | May 2003 | B1 |
6562513 | Takeuchi et al. | May 2003 | B1 |
6563998 | Farah et al. | May 2003 | B1 |
6569564 | Lane | May 2003 | B1 |
6569570 | Sonobe et al. | May 2003 | B2 |
6570325 | Graff et al. | May 2003 | B2 |
6572173 | Muller | Jun 2003 | B2 |
6573652 | Graff et al. | Jun 2003 | B1 |
6576546 | Gilbert et al. | Jun 2003 | B2 |
6579728 | Grant et al. | Jun 2003 | B2 |
6582480 | Pasquier et al. | Jun 2003 | B2 |
6582481 | Erbil | Jun 2003 | B1 |
6582852 | Gao et al. | Jun 2003 | B1 |
6589299 | Missling et al. | Jul 2003 | B2 |
6593150 | Ramberg et al. | Jul 2003 | B2 |
6599662 | Chiang et al. | Jul 2003 | B1 |
6600905 | Greeff et al. | Jul 2003 | B2 |
6602338 | Chen et al. | Aug 2003 | B2 |
6603139 | Tessler et al. | Aug 2003 | B1 |
6603391 | Greeff et al. | Aug 2003 | B1 |
6605228 | Kawaguchi et al. | Aug 2003 | B1 |
6608464 | Lew et al. | Aug 2003 | B1 |
6608470 | Oglesbee et al. | Aug 2003 | B1 |
6610440 | LaFollette et al. | Aug 2003 | B1 |
6615614 | Makikawa et al. | Sep 2003 | B1 |
6616035 | Ehrensvard et al. | Sep 2003 | B2 |
6618829 | Pax et al. | Sep 2003 | B2 |
6620545 | Goenka et al. | Sep 2003 | B2 |
6622049 | Penner et al. | Sep 2003 | B2 |
6632563 | Krasnov et al. | Oct 2003 | B1 |
6637906 | Knoerzer et al. | Oct 2003 | B2 |
6637916 | Mullner | Oct 2003 | B2 |
6639578 | Comiskey et al. | Oct 2003 | B1 |
6642895 | Zurcher et al. | Nov 2003 | B2 |
6645675 | Munshi | Nov 2003 | B1 |
6650000 | Ballantine et al. | Nov 2003 | B2 |
6650942 | Howard et al. | Nov 2003 | B2 |
6662430 | Brady et al. | Dec 2003 | B2 |
6664006 | Munshi | Dec 2003 | B1 |
6673484 | Matsuura | Jan 2004 | B2 |
6673716 | D'Couto et al. | Jan 2004 | B1 |
6674159 | Peterson et al. | Jan 2004 | B1 |
6677070 | Kearl | Jan 2004 | B2 |
6683244 | Fujimori et al. | Jan 2004 | B2 |
6683749 | Daby et al. | Jan 2004 | B2 |
6686096 | Chung | Feb 2004 | B1 |
6693840 | Shimada et al. | Feb 2004 | B2 |
6700491 | Shafer | Mar 2004 | B2 |
6706449 | Mikhaylik et al. | Mar 2004 | B2 |
6709778 | Johnson | Mar 2004 | B2 |
6713216 | Kugai et al. | Mar 2004 | B2 |
6713389 | Speakman | Mar 2004 | B2 |
6713987 | Krasnov et al. | Mar 2004 | B2 |
6723140 | Chu et al. | Apr 2004 | B2 |
6730423 | Einhart et al. | May 2004 | B2 |
6733924 | Skotheim et al. | May 2004 | B1 |
6737197 | Chu et al. | May 2004 | B2 |
6737789 | Radziemski et al. | May 2004 | B2 |
6741178 | Tuttle | May 2004 | B1 |
6750156 | Le et al. | Jun 2004 | B2 |
6752842 | Luski et al. | Jun 2004 | B2 |
6753108 | Hampden-Smith et al. | Jun 2004 | B1 |
6753114 | Jacobs et al. | Jun 2004 | B2 |
6760520 | Medin et al. | Jul 2004 | B1 |
6764525 | Whitacre et al. | Jul 2004 | B1 |
6768246 | Pelrine et al. | Jul 2004 | B2 |
6768855 | Bakke et al. | Jul 2004 | B1 |
6770176 | Benson et al. | Aug 2004 | B2 |
6773848 | Nortoft et al. | Aug 2004 | B1 |
6780208 | Hopkins et al. | Aug 2004 | B2 |
6797428 | Skotheim et al. | Sep 2004 | B1 |
6797429 | Komatsu | Sep 2004 | B1 |
6805998 | Jenson et al. | Oct 2004 | B2 |
6805999 | Lee et al. | Oct 2004 | B2 |
6818356 | Bates | Nov 2004 | B1 |
6822157 | Fujioka | Nov 2004 | B2 |
6824922 | Park et al. | Nov 2004 | B2 |
6827826 | Demaray et al. | Dec 2004 | B2 |
6828063 | Park et al. | Dec 2004 | B2 |
6828065 | Munshi | Dec 2004 | B2 |
6830846 | Kramlich et al. | Dec 2004 | B2 |
6835493 | Zhang et al. | Dec 2004 | B2 |
6838209 | Langan et al. | Jan 2005 | B2 |
6846765 | Imamura et al. | Jan 2005 | B2 |
6852139 | Zhang et al. | Feb 2005 | B2 |
6855441 | Levanon | Feb 2005 | B1 |
6861821 | Masumoto et al. | Mar 2005 | B2 |
6863699 | Krasnov et al. | Mar 2005 | B1 |
6866901 | Burrows et al. | Mar 2005 | B2 |
6866963 | Seung et al. | Mar 2005 | B2 |
6869722 | Kearl | Mar 2005 | B2 |
6884327 | Pan et al. | Apr 2005 | B2 |
6886240 | Zhang et al. | May 2005 | B2 |
6890385 | Tsuchiya et al. | May 2005 | B2 |
6896992 | Kearl | May 2005 | B2 |
6899975 | Watanabe et al. | May 2005 | B2 |
6902660 | Lee et al. | Jun 2005 | B2 |
6905578 | Moslehi et al. | Jun 2005 | B1 |
6906436 | Jenson et al. | Jun 2005 | B2 |
6911667 | Pichler et al. | Jun 2005 | B2 |
6916679 | Snyder et al. | Jul 2005 | B2 |
6921464 | Krasnov et al. | Jul 2005 | B2 |
6923702 | Graff et al. | Aug 2005 | B2 |
6924164 | Jenson | Aug 2005 | B2 |
6929879 | Yamazaki | Aug 2005 | B2 |
6936377 | Wensley et al. | Aug 2005 | B2 |
6936381 | Skotheim et al. | Aug 2005 | B2 |
6936407 | Pichler | Aug 2005 | B2 |
6949389 | Pichler et al. | Sep 2005 | B2 |
6955986 | Li | Oct 2005 | B2 |
6962613 | Jenson | Nov 2005 | B2 |
6962671 | Martin et al. | Nov 2005 | B2 |
6964829 | Utsugi et al. | Nov 2005 | B2 |
6982132 | Goldner et al. | Jan 2006 | B1 |
6986965 | Jenson et al. | Jan 2006 | B2 |
6994933 | Bates | Feb 2006 | B1 |
7022431 | Shchori et al. | Apr 2006 | B2 |
7033406 | Weir et al. | Apr 2006 | B2 |
7045246 | Simburger et al. | May 2006 | B2 |
7045372 | Ballantine et al. | May 2006 | B2 |
7056620 | Krasnov et al. | Jun 2006 | B2 |
7073723 | Fürst et al. | Jul 2006 | B2 |
7095372 | Soler Castany et al. | Aug 2006 | B2 |
7129166 | Speakman | Oct 2006 | B2 |
7131189 | Jenson | Nov 2006 | B2 |
7144654 | LaFollette et al. | Dec 2006 | B2 |
7144655 | Jenson et al. | Dec 2006 | B2 |
7157187 | Jenson | Jan 2007 | B2 |
7158031 | Tuttle | Jan 2007 | B2 |
7162392 | Vock et al. | Jan 2007 | B2 |
7183693 | Brantner et al. | Feb 2007 | B2 |
7186479 | Krasnov et al. | Mar 2007 | B2 |
7194801 | Jenson et al. | Mar 2007 | B2 |
7198832 | Burrows et al. | Apr 2007 | B2 |
7202825 | Leizerovich et al. | Apr 2007 | B2 |
7220517 | Park et al. | May 2007 | B2 |
7230321 | McCain | Jun 2007 | B2 |
7247408 | Skotheim et al. | Jul 2007 | B2 |
7253494 | Mino et al. | Aug 2007 | B2 |
7265674 | Tuttle | Sep 2007 | B2 |
7267904 | Komatsu et al. | Sep 2007 | B2 |
7267906 | Mizuta et al. | Sep 2007 | B2 |
7273682 | Park et al. | Sep 2007 | B2 |
7274118 | Jenson et al. | Sep 2007 | B2 |
7288340 | Iwamoto | Oct 2007 | B2 |
7316867 | Park et al. | Jan 2008 | B2 |
7323634 | Speakman | Jan 2008 | B2 |
7332363 | Edwards | Feb 2008 | B2 |
7335441 | Luski et al. | Feb 2008 | B2 |
RE40137 | Tuttle et al. | Mar 2008 | E |
7345647 | Rodenbeck | Mar 2008 | B1 |
7348099 | Mukai et al. | Mar 2008 | B2 |
7389580 | Jenson et al. | Jun 2008 | B2 |
7400253 | Cohen | Jul 2008 | B2 |
7410730 | Bates | Aug 2008 | B2 |
RE40531 | Graff et al. | Oct 2008 | E |
7466274 | Lin et al. | Dec 2008 | B2 |
7468221 | LaFollette et al. | Dec 2008 | B2 |
7494742 | Tarnowski et al. | Feb 2009 | B2 |
7670724 | Chan et al. | Mar 2010 | B1 |
7848715 | Boos | Dec 2010 | B2 |
7858223 | Visco et al. | Dec 2010 | B2 |
7993773 | Snyder et al. | Aug 2011 | B2 |
8010048 | Brommer et al. | Aug 2011 | B2 |
8021778 | Snyder et al. | Sep 2011 | B2 |
8056814 | Martin et al. | Nov 2011 | B2 |
8236443 | Snyder et al. | Aug 2012 | B2 |
20010005561 | Yamada et al. | Jun 2001 | A1 |
20010027159 | Kaneyoshi | Oct 2001 | A1 |
20010031122 | Lackritz et al. | Oct 2001 | A1 |
20010032666 | Jenson et al. | Oct 2001 | A1 |
20010033952 | Jenson et al. | Oct 2001 | A1 |
20010034106 | Moise et al. | Oct 2001 | A1 |
20010041294 | Chu et al. | Nov 2001 | A1 |
20010041460 | Wiggins | Nov 2001 | A1 |
20010052752 | Ghosh et al. | Dec 2001 | A1 |
20010054437 | Komori et al. | Dec 2001 | A1 |
20010055719 | Akashi et al. | Dec 2001 | A1 |
20020000034 | Jenson | Jan 2002 | A1 |
20020001746 | Jenson | Jan 2002 | A1 |
20020001747 | Jenson | Jan 2002 | A1 |
20020004167 | Jenson et al. | Jan 2002 | A1 |
20020009630 | Gao et al. | Jan 2002 | A1 |
20020019296 | Freeman et al. | Feb 2002 | A1 |
20020028377 | Gross | Mar 2002 | A1 |
20020033330 | Demaray et al. | Mar 2002 | A1 |
20020037756 | Jacobs et al. | Mar 2002 | A1 |
20020066539 | Muller | Jun 2002 | A1 |
20020067615 | Muller | Jun 2002 | A1 |
20020071989 | Verma et al. | Jun 2002 | A1 |
20020076133 | Li et al. | Jun 2002 | A1 |
20020090758 | Henley et al. | Jul 2002 | A1 |
20020091929 | Ehrensvard | Jul 2002 | A1 |
20020093029 | Ballantine et al. | Jul 2002 | A1 |
20020106297 | Ueno et al. | Aug 2002 | A1 |
20020110733 | Johnson | Aug 2002 | A1 |
20020115252 | Haukka et al. | Aug 2002 | A1 |
20020134671 | Demaray et al. | Sep 2002 | A1 |
20020139662 | Lee | Oct 2002 | A1 |
20020140103 | Kloster et al. | Oct 2002 | A1 |
20020159245 | Murasko et al. | Oct 2002 | A1 |
20020161404 | Schmidt | Oct 2002 | A1 |
20020164441 | Amine et al. | Nov 2002 | A1 |
20020170821 | Sandlin et al. | Nov 2002 | A1 |
20020170960 | Ehrensvard et al. | Nov 2002 | A1 |
20030019326 | Han et al. | Jan 2003 | A1 |
20030022487 | Yoon et al. | Jan 2003 | A1 |
20030024994 | Ladyansky | Feb 2003 | A1 |
20030029493 | Plessing | Feb 2003 | A1 |
20030030589 | Zurcher et al. | Feb 2003 | A1 |
20030035906 | Memarian et al. | Feb 2003 | A1 |
20030036003 | Shchori et al. | Feb 2003 | A1 |
20030042131 | Johnson | Mar 2003 | A1 |
20030044665 | Rastegar et al. | Mar 2003 | A1 |
20030048635 | Knoerzer et al. | Mar 2003 | A1 |
20030057423 | Shimoda et al. | Mar 2003 | A1 |
20030063883 | Demaray et al. | Apr 2003 | A1 |
20030064292 | Neudecker et al. | Apr 2003 | A1 |
20030068559 | Armstrong et al. | Apr 2003 | A1 |
20030076642 | Shiner et al. | Apr 2003 | A1 |
20030077914 | Le et al. | Apr 2003 | A1 |
20030079838 | Brcka | May 2003 | A1 |
20030091904 | Munshi | May 2003 | A1 |
20030095463 | Shimada et al. | May 2003 | A1 |
20030097858 | Strohhofer et al. | May 2003 | A1 |
20030109903 | Berrang et al. | Jun 2003 | A1 |
20030127319 | Demaray et al. | Jul 2003 | A1 |
20030134054 | Demaray et al. | Jul 2003 | A1 |
20030141186 | Wang et al. | Jul 2003 | A1 |
20030143853 | Celii et al. | Jul 2003 | A1 |
20030146877 | Mueller | Aug 2003 | A1 |
20030152829 | Zhang et al. | Aug 2003 | A1 |
20030162094 | Lee et al. | Aug 2003 | A1 |
20030173207 | Zhang et al. | Sep 2003 | A1 |
20030173208 | Pan et al. | Sep 2003 | A1 |
20030174391 | Pan et al. | Sep 2003 | A1 |
20030175142 | Milonopoulou et al. | Sep 2003 | A1 |
20030178623 | Nishiki et al. | Sep 2003 | A1 |
20030178637 | Chen et al. | Sep 2003 | A1 |
20030180610 | Felde et al. | Sep 2003 | A1 |
20030185266 | Henrichs | Oct 2003 | A1 |
20030231106 | Shafer | Dec 2003 | A1 |
20030232248 | Iwamoto et al. | Dec 2003 | A1 |
20040008587 | Siebott et al. | Jan 2004 | A1 |
20040015735 | Norman | Jan 2004 | A1 |
20040023106 | Benson et al. | Feb 2004 | A1 |
20040028875 | Van Rijn et al. | Feb 2004 | A1 |
20040029311 | Snyder et al. | Feb 2004 | A1 |
20040038050 | Saijo et al. | Feb 2004 | A1 |
20040043557 | Haukka et al. | Mar 2004 | A1 |
20040048157 | Neudecker et al. | Mar 2004 | A1 |
20040053124 | LaFollette et al. | Mar 2004 | A1 |
20040058237 | Higuchi et al. | Mar 2004 | A1 |
20040072067 | Minami et al. | Apr 2004 | A1 |
20040077161 | Chen et al. | Apr 2004 | A1 |
20040078662 | Hamel et al. | Apr 2004 | A1 |
20040081415 | Demaray et al. | Apr 2004 | A1 |
20040081860 | Hundt et al. | Apr 2004 | A1 |
20040085002 | Pearce | May 2004 | A1 |
20040101761 | Park et al. | May 2004 | A1 |
20040105644 | Dawes | Jun 2004 | A1 |
20040106038 | Shimamura et al. | Jun 2004 | A1 |
20040106045 | Ugaji | Jun 2004 | A1 |
20040106046 | Inda | Jun 2004 | A1 |
20040118700 | Schierle-Arndt et al. | Jun 2004 | A1 |
20040126305 | Chen et al. | Jul 2004 | A1 |
20040151986 | Park et al. | Aug 2004 | A1 |
20040161640 | Salot | Aug 2004 | A1 |
20040175624 | Luski et al. | Sep 2004 | A1 |
20040188239 | Robison et al. | Sep 2004 | A1 |
20040209159 | Lee et al. | Oct 2004 | A1 |
20040212276 | Brantner et al. | Oct 2004 | A1 |
20040214079 | Simburger et al. | Oct 2004 | A1 |
20040219434 | Benson et al. | Nov 2004 | A1 |
20040245561 | Sakashita et al. | Dec 2004 | A1 |
20040258984 | Ariel et al. | Dec 2004 | A1 |
20040259305 | Demaray et al. | Dec 2004 | A1 |
20050000794 | Demaray et al. | Jan 2005 | A1 |
20050006768 | Narasimhan et al. | Jan 2005 | A1 |
20050048802 | Zhang et al. | Mar 2005 | A1 |
20050070097 | Barmak et al. | Mar 2005 | A1 |
20050072458 | Goldstein | Apr 2005 | A1 |
20050079418 | Kelley et al. | Apr 2005 | A1 |
20050095506 | Klaassen | May 2005 | A1 |
20050105231 | Hamel et al. | May 2005 | A1 |
20050110457 | LaFollette et al. | May 2005 | A1 |
20050112461 | Amine et al. | May 2005 | A1 |
20050118464 | Levanon | Jun 2005 | A1 |
20050130032 | Krasnov et al. | Jun 2005 | A1 |
20050133361 | Ding et al. | Jun 2005 | A1 |
20050141170 | Honda et al. | Jun 2005 | A1 |
20050142447 | Nakai et al. | Jun 2005 | A1 |
20050147877 | Tarnowski et al. | Jul 2005 | A1 |
20050158622 | Mizuta et al. | Jul 2005 | A1 |
20050170736 | Cok | Aug 2005 | A1 |
20050175891 | Kameyama et al. | Aug 2005 | A1 |
20050176181 | Burrows et al. | Aug 2005 | A1 |
20050181280 | Ceder et al. | Aug 2005 | A1 |
20050183946 | Pan et al. | Aug 2005 | A1 |
20050189139 | Stole | Sep 2005 | A1 |
20050208371 | Kim et al. | Sep 2005 | A1 |
20050239917 | Nelson et al. | Oct 2005 | A1 |
20050255828 | Fisher | Nov 2005 | A1 |
20050266161 | Medeiros et al. | Dec 2005 | A1 |
20060019504 | Taussig | Jan 2006 | A1 |
20060021214 | Jenson et al. | Feb 2006 | A1 |
20060021261 | Face | Feb 2006 | A1 |
20060040177 | Onodera et al. | Feb 2006 | A1 |
20060046907 | Rastegar et al. | Mar 2006 | A1 |
20060054496 | Zhang et al. | Mar 2006 | A1 |
20060057283 | Zhang et al. | Mar 2006 | A1 |
20060057304 | Zhang et al. | Mar 2006 | A1 |
20060063074 | Jenson et al. | Mar 2006 | A1 |
20060071592 | Narasimhan et al. | Apr 2006 | A1 |
20060134522 | Zhang et al. | Jun 2006 | A1 |
20060155545 | Jayne | Jul 2006 | A1 |
20060201583 | Michaluk et al. | Sep 2006 | A1 |
20060210779 | Weir et al. | Sep 2006 | A1 |
20060222954 | Skotheim et al. | Oct 2006 | A1 |
20060234130 | Inda | Oct 2006 | A1 |
20060237543 | Goto et al. | Oct 2006 | A1 |
20060255435 | Fuergut et al. | Nov 2006 | A1 |
20060286448 | Snyder et al. | Dec 2006 | A1 |
20070009802 | Lee et al. | Jan 2007 | A1 |
20070021156 | Hoong et al. | Jan 2007 | A1 |
20070023275 | Tanase et al. | Feb 2007 | A1 |
20070037058 | Visco et al. | Feb 2007 | A1 |
20070053139 | Zhang et al. | Mar 2007 | A1 |
20070064396 | Oman | Mar 2007 | A1 |
20070087230 | Jenson et al. | Apr 2007 | A1 |
20070091543 | Gasse et al. | Apr 2007 | A1 |
20070125638 | Zhang et al. | Jun 2007 | A1 |
20070141468 | Barker | Jun 2007 | A1 |
20070148065 | Weir et al. | Jun 2007 | A1 |
20070148553 | Weppner | Jun 2007 | A1 |
20070151661 | Mao et al. | Jul 2007 | A1 |
20070164376 | Burrows et al. | Jul 2007 | A1 |
20070166612 | Krasnov et al. | Jul 2007 | A1 |
20070184345 | Neudecker et al. | Aug 2007 | A1 |
20070196682 | Visser et al. | Aug 2007 | A1 |
20070202395 | Snyder et al. | Aug 2007 | A1 |
20070205513 | Brunnbauer et al. | Sep 2007 | A1 |
20070210459 | Burrows et al. | Sep 2007 | A1 |
20070222681 | Greene et al. | Sep 2007 | A1 |
20070224951 | Gilb et al. | Sep 2007 | A1 |
20070229228 | Yamazaki et al. | Oct 2007 | A1 |
20070235320 | White et al. | Oct 2007 | A1 |
20070264564 | Johnson et al. | Nov 2007 | A1 |
20070278653 | Brunnbauer et al. | Dec 2007 | A1 |
20070298326 | Angell et al. | Dec 2007 | A1 |
20080003496 | Neudecker et al. | Jan 2008 | A1 |
20080008936 | Mizuta et al. | Jan 2008 | A1 |
20080014501 | Skotheim et al. | Jan 2008 | A1 |
20080057397 | Skotheim et al. | Mar 2008 | A1 |
20080150829 | Lin et al. | Jun 2008 | A1 |
20080213672 | Skotheim et al. | Sep 2008 | A1 |
20080233708 | Hisamatsu | Sep 2008 | A1 |
20080254575 | Fuergut et al. | Oct 2008 | A1 |
20080261107 | Snyder et al. | Oct 2008 | A1 |
20080263855 | Li et al. | Oct 2008 | A1 |
20080286651 | Neudecker et al. | Nov 2008 | A1 |
20090092903 | Johnson et al. | Apr 2009 | A1 |
20090124201 | Meskens | May 2009 | A1 |
20090181303 | Neudecker et al. | Jul 2009 | A1 |
20090302226 | Schieber et al. | Dec 2009 | A1 |
20090308936 | Nitzan et al. | Dec 2009 | A1 |
20090312069 | Peng et al. | Dec 2009 | A1 |
20100001079 | Martin et al. | Jan 2010 | A1 |
20100032001 | Brantner | Feb 2010 | A1 |
20100086853 | Venkatachalam et al. | Apr 2010 | A1 |
20110267235 | Brommer et al. | Nov 2011 | A1 |
20110304430 | Brommer et al. | Dec 2011 | A1 |
Number | Date | Country |
---|---|---|
1415124 | Apr 2003 | CN |
1532984 | Sep 2004 | CN |
19824145 | Dec 1999 | DE |
10 2005 014 427 | Sep 2006 | DE |
10 2006 054 309 | Nov 2006 | DE |
10 2008 016 665 | Oct 2008 | DE |
102007030604 | Jan 2009 | DE |
0 510 883 | Oct 1992 | EP |
0 639 655 | Feb 1995 | EP |
0 652 308 | May 1995 | EP |
0 820 088 | Jan 1998 | EP |
1 068 899 | Jan 2001 | EP |
0 867 985 | Feb 2001 | EP |
1 092 689 | Apr 2001 | EP |
1 189 080 | Mar 2002 | EP |
1 713 024 | Oct 2006 | EP |
2806198 | Sep 2001 | FR |
2 861 218 | Apr 2005 | FR |
55009305 | Jan 1980 | JP |
56-076060 | Jun 1981 | JP |
56156675 | Dec 1981 | JP |
60-068558 | Apr 1985 | JP |
60068558 | Apr 1985 | JP |
61-269072 | Nov 1986 | JP |
62267944 | Nov 1987 | JP |
63-290922 | Nov 1988 | JP |
2000-162234 | Nov 1988 | JP |
2-054764 | Feb 1990 | JP |
2230662 | Sep 1990 | JP |
03-036962 | Feb 1991 | JP |
4058456 | Feb 1992 | JP |
4072049 | Mar 1992 | JP |
6-010127 | Jan 1994 | JP |
6-100333 | Apr 1994 | JP |
7-233469 | May 1995 | JP |
7-224379 | Aug 1995 | JP |
08-114408 | May 1996 | JP |
09-259932 | Oct 1997 | JP |
10-026571 | Jan 1998 | JP |
10-239187 | Sep 1998 | JP |
11204088 | Jul 1999 | JP |
11-251518 | Sep 1999 | JP |
2000114435 | May 2000 | JP |
2000188099 | Jul 2000 | JP |
2000268867 | Sep 2000 | JP |
2001-171812 | Jun 2001 | JP |
2001259494 | Sep 2001 | JP |
2001297764 | Oct 2001 | JP |
2001328198 | Nov 2001 | JP |
2002-140776 | May 2002 | JP |
2002-344115 | Nov 2002 | JP |
2003-17040 | Jan 2003 | JP |
2003-133420 | May 2003 | JP |
2003347045 | Dec 2003 | JP |
2004071305 | Mar 2004 | JP |
2004 146297 | May 2004 | JP |
2004149849 | May 2004 | JP |
2004-158268 | Jun 2004 | JP |
2004273436 | Sep 2004 | JP |
2005-256101 | Sep 2005 | JP |
2005-286011 | Oct 2005 | JP |
2002-026412 | Feb 2007 | JP |
7-107752 | Apr 2007 | JP |
20020007881 | Jan 2002 | KR |
20020017790 | Mar 2002 | KR |
20020029813 | Apr 2002 | KR |
20020038917 | May 2002 | KR |
20030033913 | May 2003 | KR |
20030042288 | May 2003 | KR |
20030085252 | Nov 2003 | KR |
2241281 | Nov 2004 | RU |
WO 9513629 | May 1995 | WO |
WO 9623085 | Aug 1996 | WO |
WO 9623217 | Aug 1996 | WO |
WO 9727344 | Jul 1997 | WO |
WO 9735044 | Sep 1997 | WO |
WO 9847196 | Oct 1998 | WO |
WO 9943034 | Aug 1999 | WO |
WO 9957770 | Nov 1999 | WO |
WO 0021898 | Apr 2000 | WO |
WO 0022742 | Apr 2000 | WO |
WO 0028607 | May 2000 | WO |
WO 0036665 | Jun 2000 | WO |
WO 0060682 | Oct 2000 | WO |
WO 0060689 | Oct 2000 | WO |
WO 0062365 | Oct 2000 | WO |
WO 0101507 | Jan 2001 | WO |
WO 0117052 | Mar 2001 | WO |
WO 0124303 | Apr 2001 | WO |
WO 0133651 | May 2001 | WO |
WO 0139305 | May 2001 | WO |
WO 0173864 | Oct 2001 | WO |
WO 0173865 | Oct 2001 | WO |
WO 0173866 | Oct 2001 | WO |
WO 0173868 | Oct 2001 | WO |
WO 0173870 | Oct 2001 | WO |
WO 0173883 | Oct 2001 | WO |
WO 0173957 | Oct 2001 | WO |
WO 0182390 | Nov 2001 | WO |
02 15301 | Feb 2002 | WO |
WO 0212932 | Feb 2002 | WO |
WO 0242516 | May 2002 | WO |
WO 0247187 | Jun 2002 | WO |
WO 02071506 | Sep 2002 | WO |
WO 02101857 | Dec 2002 | WO |
WO 03003485 | Jan 2003 | WO |
WO 03005477 | Jan 2003 | WO |
WO 03026039 | Mar 2003 | WO |
WO 03036670 | May 2003 | WO |
WO 03069714 | Aug 2003 | WO |
WO 03080325 | Oct 2003 | WO |
WO 03083166 | Oct 2003 | WO |
WO 2004012283 | Feb 2004 | WO |
WO 2004021532 | Mar 2004 | WO |
WO 2004061887 | Jul 2004 | WO |
WO 2004077519 | Sep 2004 | WO |
WO 2004086550 | Oct 2004 | WO |
WO 2004093223 | Oct 2004 | WO |
WO 2004106581 | Dec 2004 | WO |
WO 2004106582 | Dec 2004 | WO |
WO 2005008828 | Jan 2005 | WO |
WO 2005013394 | Feb 2005 | WO |
WO 2005038957 | Apr 2005 | WO |
WO 2005067645 | Jul 2005 | WO |
WO 2005085138 | Sep 2005 | WO |
WO 2005091405 | Sep 2005 | WO |
WO 2006063308 | Jun 2006 | WO |
WO 2006085307 | Aug 2006 | WO |
WO 2007016781 | Feb 2007 | WO |
WO-2007019855 | Feb 2007 | WO |
WO 2007027535 | Mar 2007 | WO |
WO 2007095604 | Aug 2007 | WO |
WO 2008036731 | Mar 2008 | WO |
Entry |
---|
Abraham, K.M. et al., “Inorganic-organic composite solid polymer electrolytes,” 147(4) J. Electrochem. Soc. 1251-56 (2000). |
Abrahams, I., “Li6Zr2O7, a new anion vacancy ccp based structure, determined by ab initio powder diffraction methods,” 104 J. Solid State Chem. 397-403 (1993). |
Amatucci, G. et al., “Lithium scandium phosphate-based electrolytes for solid state lithium rechargeable microbatteries,” 60 Solid State Ionics 357-65 (1993). |
Appetecchi, G.B. et al., “Composite polymer electrolytes with improved lithium metal electrode interfacial properties,” 145(12) J. Electrochem. Soc. 4126-32 (1998). |
Bates, J.B. et al., “Electrical properties of amorphous lithium electrolyte thin films,” 53-56 Solid State Ionics 647-54 (1992). |
Delmas, C. et al., “Des conducteurs ioniques pseudo-bidimensionnels Li8MO6(M= Zr, Sn), Li7LO6(L= Nb, Ta) et Li6In2O6,” 14 Mat. Res. Bull. 619-25 (1979). |
Hu, Y-W. et al., “Ionic conductivity of lithium phosphate-doped lithium orthosilicate,” 11 Mat. Res. Bull. 1227-30 (1976). |
Neudecker, B. et al., “Li9SiA1O8: a lithium ion electrolyte for voltages above 5.4 V,” 143(7) J. Electrochem. Soc. 2198-203 (1996). |
Ohno, H. et al., “Electrical conductivity of a sintered pellet of octalithium zirconate,” 132 J. Nucl. Mat. 222-30 (1985). |
Scholder, V. et al., “Über Zirkonate, Hafnate und Thorate von Barium, Strontium, Lithium und Natrium,” Zeitschrift für Anorganische und Allgemeine Chemie, Band 362, pp. 149-168 (1968). |
Yu, X. et al., “A stable thin-film lithium electrolyte: lithium phosphorus oxynitride,” 144(2) J. Electrochem. Soc. 524-532 (1997). |
Hwang et al., “Characterization of Sputter-Deposited LiMn2O4 Thin Films for Rechargeable Microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994). |
Jones et al., 53-56 Solid State Ionics 628 (1992). |
Mattox “Handbook of Physical Vapor Deposition (PVD) Processing, Society of Vacuum Coaters,” Albuquerque, New Mexico 660f and 692ff, Noyes Publications (1998). |
Affmito, J.D. et al., “PML/oxide/PML barrier layer performance differences arising from use of UV or electron beam polymerization of the PML layers,” Thin Solid Films 308-309: 19-25 (1997). |
Affinito, J.D. et al., “Polymer-oxide transparent barrier layers,” Society of Vacuum Coaters, 39th Ann. Technical Conference Proceedings, May 5-10, 1996, Philadelphia, PA, pp. 392-397 (1996). |
Alder, T. et al., “High-efficiency fiber-to-chip coupling using low-loss tapered single-mode fiber,” IEEE Photonics Tech. Left. 12(8): 1016-1018 (2000). |
Almeida, V.R. et al., “Nanotaper for compact mode conversion,” Optics Letters 28(15): 1302-1304 (2003). |
Anh et al., “Significant Suppression of Leakage Current in (Ba,Sr)TiO3 Thin Films by Ni or Mn Doping,” J. Appl. Phys.,92(5): 2651-2654 (Sep. 2002). |
Asghari, M. And Dawnay, E., “ASOC™—a manufacturing integrated optics technology,” SPIE 3620: 252-262 (Jan. 1999). |
Barbier, D. et al., “Amplifying four-wavelength combiner, based on erbium/ytterbium doped waveguide amplifiers and integrated splitters,” IEEE Photonics Tech. Lett. 9:315-317 (1997). |
Barbier, D., “Performances and potential applications of erbium doped planar waveguide amplifiers and lasers,” Proc. OAA, Victoria, BC, Canada, pp. 58-63 (Jul. 21-23, 1997). |
Beach R.J., “Theory and optimization of lens ducts,” Applied Optics 35(12): 2005-2015 (1996). |
Belkind, A. et al., “Pulsed-DC Reactive Sputtering of Dielectrics: Pulsing Parameter Effects,” 43rd Annual Technical Conference Proceedings (2000). |
Belkind, A. et al., “Using pulsed direct current power for reactive sputtering of A12O3,” J. Vac. Sci. Technol. A 17(4): 1934-1940 (1999). |
Bestwick, T., “ASOC™ silicon integrated optics technology,” SPIE 3631: 182-190 (1999). |
Borsella, E. et al., “Structural incorporation of silver in soda-lime glass by the ion-exchange process: a photoluminescence spectroscopy study,” Applied Physics A 71: 125-132 (2000). |
Byer, R.L., “Nonlinear optics and solid-state lasers: 2000,” IEEE J. Selected Topics in Quantum Electronics 6(6): 911-930 (2000). |
Campbell, S.A. et al., “Titanium dioxide (TiO2)-based gate insulators,” IBM J. Res. Develop. 43(3): 383-392 (1999). |
Chang, C.Y. and Sze, S.M. (eds.), in ULSI Technology, The McGraw-Hill Companies, Inc., Nyew York, Chapter 4, pp. 169-170 and 226-231 (1996). |
Chen, G. et al., “Development of supported bifunctional electrocatalysts for unitized regenerative fuel cells,” J. Electrochemical Society 149(8): A1092-A1099 (2002). |
Choi, Y.B. et al., “Er-Al-codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering,” Optics Letters 25(4): 263-265 (2000). |
Choy et al., “Eu-Doped Y2O3 Phosphor Films Produced by Electrostatic-Assisted Chemical Vapor Deposition,” J. Mater. Res. 14(7): 3111-3114 (Jul. 1999). |
Cocorullo, G. et al., “Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition,” Optics Lett. 21(24): 2002-2004 (1996). |
Cooksey, K. et al., “Predicting permeability & Transmission rate for multilayer materials,” Food Technology 53(9): 60-63 (1999). |
Crowder, M.A. et al., “Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification,” IEEE Electron Device Lett. 19(8): 306-308 (1998). |
Delavaux, J-M. et al., “Integrated optics erbium ytterbium amplifier system in 10Gb/s fiber transmission experiment,” 22nd European Conference on Optical Communication, Osla, I.123-I.126 (1996). |
Distributed Energy Resources: Fuel Cells, Projects, 4 pages. http://www.eere.energy.govider/fuel—cells/projects.html (2003). |
Dorey, R.A., “Low temperature micromoulding of functional ceramic devices,” Grant summary for GR/S84156/01 for the UK Engineering and Physical Sciences Research Council, 2 pages (2004). |
DuPont Teijin Films, Mylar 200 SBL 300, Product Information, 4 pages (2000). |
Electrometals Technologies Limited, Financial Report for 2002, Corporate Directory, Chairman's review, Review of Operations, 10 pages (2002). |
E-Tek website: FAQ, Inside E-Tek, E-TEk News, Products; http://www.etek-inc.com/, 10 pages (2003). |
Flytzanis, C. et al., “Nonlinear optics in composite materials,” in Progress in Optics XXIX, Elsevier Science Publishers B.V., pp. 323-425 (1991). |
Frazao, O. et al., “EDFA gain flattening using long-period fibre gratings based on the electric arc technique,” Proc. London Comm. Symp. 2001, London, England, 3 pages (2001). |
Fujii, M. et al., “1.54 μm photoluminescence of Er3+doped into SiO2 films containing Si nanocrystals: evidence for energy transfer from Si nanocrystals for Er3+,” Appl. Phys. Lett. 71(9): 1198-1200 (1997). |
Garcia, C. et al., “Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2,” Appl. Phys. Lett. 82(10): 1595-1597 (2003). |
Goossens, A. et al., “Sensitization of TiO2 with p-type semiconductor polymers,” Chem. Phys. Lett. 287: 148 (1998). |
Greene, J.E. et al., “Morphological and electrical properties of rf sputtered Y2O3-doped ZrO2 thin films,” J. Vac. Sci. Tech. 13(1): 72-75 (1976). |
Han, H.-S. et al., “Optical gain at 1.54 μm in Erbium-doped Silicon nanocluster sensitized waveguide,” Appl. Phys. Left. 79(27): 4568-4570 (2001). |
Hayakawa, T. et al., “Enhanced fluorescence from Eu3+owing to surface plasma oscillation of silver particles in glass,” J. Non-Crystalline Solids 259: 16-22 (1999). |
Hayakawa, T. et al., “Field enhancement effect of small Ag particles on the fluorescence from Eu3+-doped SiO2 glass,” Appl. Phys. Lett. 74(11): 1513-1515 (1999). |
Hayfield, P.C.S., I Development of a New Material-Monolithic Ti94O7 Ebonixe4 Ceramic, Royal Society of Chemistry, Cambridge, Table of Contents, 4 pages (2002). |
Hehlen, M.P. et al., “Spectroscopic properties of Er3+- and Yb3+-doped soda-lime silicate and aluminosilicate glasses,” Physical Review B 56(15): 9302-9318 (1997). |
Hehlen, M.P. et al., “Uniform upconversion in high-concentration Er3+-doped soda lime silicate and aluminosilicate glasses,” Optics Letters 22(11); 772-774 (1997). |
Horst, F. et al., “Compact, tunable optical devices in silicon-oxynitride waveguide technology,” Top. Meeting Integrated Photonics Res. '00, Quebec, Canada, p. IThF1, 3 pages (2000). |
Howson, R.P., “The reactive sputtering of oxides and nitrides,” Pure & Appl. Chem. 66(6): 1311-1318 (1994). |
Hubner, J. and Guldberg-Kjaer, S., “Planar Er- and Yb-doped amplifiers and lasers,” COM Technical University of Denmark, 10th European Conf. on Integrated Optics, Session WeB2, pp. 71-74 (2001). |
Hwang et al., “Characterization of sputter-deposited LiMn2O4 thin films for rechargeable microbatteries,” 141(12) J. Electrochem. Soc. 3296-99 (1994). |
Hwang, M-S. et al., “The effect of pulsed magnetron sputtering on the properties of iridium tin oxide thin films,” Surface and Coatings Tech. 171: 29-33 (2003). |
Im, J.S. and Sposili, R.S., “Crystalline Si films for integrated active-matrix liquid crystal displays,” MRS Bulletin, pp. 39-48 (1996). |
Im, J.S. et al., “Controlled super-lateral growth of Si-films for microstructural manipulation and optimization,” Physica Status Solidi (A) 166(2): 603-617 (1998). |
Im, J.S. et al., “Single-crystal Si films for thin-film transistor devices,” Appl. Physics Lett. 70(25): 3434-3436 (1997). |
Itob, M. et al., “Large reduction of singlemode-fibre coupling loss in 1.5% Δplanar lightwave circuits using spot-size converters,” Electronics Letters 38(2): 72-74 (2002). |
Jackson, M.K. And Movassaghi, M., “An accurate compact EFA model,” Eur. Conf. Optical Comm., Munich, Germany, 2 pages (2000). |
Janssen, R. et al., “Photoinduced electron transfer from conjugated polymers onto nanocrystalline TiO2,” Synthet. Metal., 1 page (1999). |
Johnson, J.E. et al., “Monolithically integrated semiconductor optical amplifier and electroabsorption modulator with dual-waveguide spot-size converter input,” IEEE J. Selected topics in Quantum Electronics 6(1): 19-25 (2000). |
Jonsson, L.B. et al., “Frequency response in pulsed DC reactive sputtering processes,” Thin Solid Films 365: 43-48 (2000). |
Kato, K. and Inoue, Y., “Recent progress on PLC hybrid integration,” SPIE 3631: 28-36 (1999). |
Kato, K. and Tohmori, Y., “PLC hybrid integration technology and its application to photonic components,” IEEE J. Selected Topics in Quantum Electronics 6(1): 4-13 (2000). |
Kelly, P.J. and Arnell, R.D., “Control of the structure and properties of aluminum oxide coatings deposited by pulsed magnetron sputtering,” J. Vac. Sci. Technol. A 17(3): 945-953 (1999). |
Kelly, P.J. et al., “A novel technique for the deposition of aluminum-doped zinc oxide films,” Thin Solid Films 426(1-2): 111-116 (2003). |
Kelly, P.J. et al., “Reactive pulsed magnetron sputtering process for alumina films,” J. Vac. Sci. Technol. A 18(6): 2890-2896 (2000). |
Kik, P.G. and Polman, A., “Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2,” J. Appl. Phys. 91(1): 536-536 (2002). |
Kim et al., “Correlation Between the Microstructures and the Cycling Performance of RuO2 Electrodes for Thin-Film Microsupercapacitros,” J. Vac. Sci. Technol. B20(5): 1827-1832 (Sep. 2002). |
Kim, D-W. et al. “Mixture Behavior and Microwave Dielectric Properties in the Low-fired TiO2-CuO System,” Jpn. J. Appl. Phys. 39:2696-2700 (2000). |
Kim, H-K. et al., “Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery,” J. Vac. Sci. Technol. A 22(4): 1182-1187 (2004). |
Kim, J-Y. et al. “Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films,” J. Vac. Sci. Technol. A 19(2):429-434 (2001). |
Ladouceur, F. and Love, J.D., in: Silica-based Buried Channel Waveguides and Devices, Chapman & Hall, London, Table of Contents, 6 pages (1996). |
Ladouceur, F. et al., “Effect of side wall roughness in buried channel waveguides,” IEEE Proc. Optoelectron. 141(4):242-248 (1994). |
Lamb, W. and Zeiler, R., Designing Non-Foil Containing Skins for Vacuum Insulation Panel (VIP) Application, Vuoto XXVIII(1-2):55-58 (1999). |
Lamb, W.B., “Designing Nonfoil Containing Skins for VIP Applications,” DuPont VIA Symposium Presentation, 35 pages (1999). |
Lange, M.R. et al, “High Gain Ultra-Short Length Phosphate glass Erbium-Doped Fiber Amplifier Material,” OSA Optical Fiber Communications (OFC), 3 pages (2002). |
Laporta, P. et al, “Diode-pumped cw bulk Er: Yb: glass laser,” Optics Letters 16(24):1952-1954 (1991). |
Laurent-Lund, C. et al., “PECVD Grown Multiple Core Planar Waveguides with Extremely Low Interface Reflections and Losses,” IEEE Photonics Tech. Lett. 10(10):1431-1433 (1998). |
Lee, B.H. et al., “Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silion,” Appl. Phys. Lett. 74(21):3143-3145 (1999). |
Lee, K.K. et al., “Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model,” Appl. Phys. Lett. 77(11):1617-1619 (2000). |
Love, J.D. et al., “Quantifying Loss Minimisation in Single-Mode Fibre Tapers,” Electronics Letters 22(17):912-914 (1986). |
Mardare, D. and Rusu, G.I., “On the structure of Titanium Oxide Thin Films,” Andalele Stiintifice Ale Universitatii IASI, Romania, pp. 201-208 (1999). |
Marques, P.V.S. et al., “Planar Silica-on-Silicon Waveguide Lasers Based in Two Layers Core Devices,” 10th European Conference on Integrated Optics, Session WeB2, pp. 79-82 (2001). |
Meijerink, A. et al, “Luminescence of Ag+, in Crystalline and Glassy Srb4O7,” J. Physics Chem. Solids 54(8):901-906 (1993). |
Mesnaoui, M. et al, “Spectroscopic properties of Ag, ions in phosphate glasses of NaPO3—AgPO3 system,” Eur. J. Solid State Inorg. Chem. 29:1001-1013 (1992). |
Mitomi, O. et al., “Design of a Single-Mode Tapered Waveguide for Low-Loss Chip-to-Fiber Coupling,” IEEE J. Quantum Electronics 30(8): 1787-1793 (1994). |
Mizuno, Y. et al “Temperature dependence of oxide decomposition on titanium surfaces in UHV,” J. Vac. Sci & Tech. A. 20(5): 1716-1721 (2002). |
Ohkubo, H. et al., Polarization-Insensitive Arrayed-Waveguide Grating Using Pure Si02Cladding, Fifth Optoelectronics and Communication Conference (OECC 2000) Technical Digest, pp. 366-367 (2000). |
Ohmi, S. et al., “Rare earth mental oxides for high-K fate insulator,” VLSI Design 2004, 1 page (2004). |
Ohtsuki, T., et al., “Gain Characteristics of high concentration Er3+-doped phosphate glass waveguide,” J. Appl. Phys. 78(6):3617-3621 (1995). |
Ono, H. et al., “Design of a Low-loss Y-branch Optical Waveguide,” Fifth Optoelectronic and Communications Conference (OECC 2000) Technical Digest, pp. 502-503 (2000). |
Padmini, P. et al. “Realization of High Tunability Barium Strontium Titanate Thin Films by rf Megnetron Sputtering,” Appl. Phys. Lett. 75(20):3186-3188 (1999). |
Pan, T. et al., “Planar Er 3+-doped aluminosilicate waveguide amplifier with more than 10 dB gain across C-band, ” Optical Society of America, 3 pages (2000). |
Park et al., “Characteristics of Pt Thin Film on the Conducting Ceramics TiO and Ebonex (Ti4O7) as Electrode Materials,” Thin Solid Films 258: 5-9 (1995). |
Peters, D.P. et al., “Formation mechanism of silver nanocrystals made by ion irradiation of Na+—Ag+ion-exchanged sodalime silicate glass,” Nuclear Instruments and Methods in Physics Research B 168:237-244 (2000). |
Rajarajan, M. et al., “Numerical Study of Spot-Size Expanders fro an Efficient OEIC to SMF Coupling,” IEEE Photonics Technology Letters 10(8): 1082-1084 (1998). |
Ramaswamy, R.V. et al., “Ion-Exchange Glass Waveguides: A Review,” J. Lightwave Technology 6(6): 984-1002 (1988). |
Roberts, S.W. et al., “The Photoluminescence of Erbium-doped Silicon Monoxide,” University of Southampton , Department of Electronics and Computer Science Research Journal, 7 pages (1996). |
Saha et al., “Large Reduction of Leakage Current by Graded-Layer La Doping in (Ba0.5,Sr0.5)TiO3 Thin Films,” Appl. Phys. Lett. 79(1): 111-113 (Jul. 2001). |
Sanyo Vacuum Industries Co., Ltd. Products Infor, TiO2, (2003), 1 page, http://www.sanyovac.co.jp/Englishweb/products?ETiO2.htm. |
Schermer, R. et al., “Investigation of Mesa Dielectric Waveguides,” Proceedings of the OSA Integrated Photonics Research Topical Meeting and Exhibit, Paper No. IWB3, 3 pages (2001). |
Schiller, S. et al., “PVD Coating of Plastic Webs and Sheets with High Rates on Large Areas,” European Materials Research Society 1999 Spring Meeting, Jun. 1-4, 1999, Strasbourg, France, 13 pages (1999). |
Scholl, R., “Power Supplies for Pulsed Plasma Technologies: State-of-the-Art and Outlook,” Advances Energy Industries, Inc. 1-8 (1999). |
Scholl, R., “Power Systems for Reactive Sputtering of Insulating Films,” Advances Energy Industries, Inc., 1-8 (Aug. 2001). |
Second International Symposium of Polymer Surface Modification: Relevance to Adhesion, Preliminary Program, 13 pages (1999). |
Seventh International Conference on TiO2 Photocatalysis: Fundamentals & Applications, Toronto, Ontario, Canada, Final Program, 7 pages (Nov. 17-21, 2002). |
Sewell, P. et al., “Rib Waveguide Spot-Size Transformers: Modal Properties,” J Lightwave Technology 17(5):848-856 (1999). |
Shaw, D.G. et al., “Use of Vapor Deposited Acrylate Coatings to Improve the Barrier Properties of Metallized Film,” Society of Vacuum Coaters, 37th Annual Technical Conference Proceedings, pp. 240-244 (1994). |
Shin, J.C. et al. “Dielectric and Electrical Properties of Sputter Grown (Ba,Se)TiO3 Thin Films,” J. Appl. Phys. 86(1):506-513 (1999). |
Shmulovich, J. et al., “Recent progress in Erbium-doped waveguide amplifiers,” Bell Laboratories, pp. 35-37 (1999). |
Slooff, L.H. et al., “Optical properties of Erbium-doped organic polydentate cage complexes,” J. Appl. Phys. 83(1):497-503 (1998). |
Smith, R.E. et al., “Reduced Coupling Loss Using a Tapered-Rib Adiabatic-Following Fiber Coupler,” IEEE Photonics Technology Lett. 8(8):1052-1054 (1996). |
Snoeks, E. et al., “Cooperative upconversion in erbium-implanted soda-lime silicate glass optical waveguides,” J. Opt. Soc. Am. B 12(8): 1468-1474 (1995). |
Strohhofer, C. and Polman, A. “Energy transfer to Er3+in Ag ion-exchanged glass,” FOM Institute for Atomic and Molecular Physics, 10 pages (2001). |
Sugiyama, A. et al., “Gas Permeation Through the Pinholes of Plastic Film Laminated with Aluminum Foil,” Vuoto XXVIII(1-2):51-54 (1999). |
Tervonen, A. “Challenges and opportunities for integrated optics in optical networks,” SPIE 3620:2-11 (1999). |
Ting, C.Y. et al., “Study of planarized sputter-deposited SiO2” J. Vac. Sci Technol, 15(3):1105-1112 (1978). |
Tomaszewski, H. et al., “Yttria-stabilized zirconia thin films grown by reactive r.f. magnetron sputtering,” Thin Solid Films 287: 104-109 (1996). |
Triechel, O. and Kirchhoff, V., “The influences of pulsed magnetron sputtering on topography and crystallinity of TiO2 films on glass,” Surface and Coating Technology 123:268-272 (2000). |
Tukamoto, H. and West, A.R., “Electronic Conductivity of LiCoOs and Its Enhancement by Magnesium Doping,” J. Electrochem. Soc 144(9):3164-3168 (1997). |
Van Dover, R.B., “Amorphous Lanthanide-Doped TiOx Dielectric Films,” Appl. Phys. Left. 74(20):3041-3043 (1999). |
Viljanen, J. and Leppihalme, M., “Planner Optical Coupling Elements for Multimode Fibers with Two-Step Ion Migration Process,” Applied Physics 24(1):61-63 (1981). |
Villegas, M.A. et al., “Optical spectroscopy of a soda lime glass exchanged with silver,” Phys. Chem. Glasses 37(6):248-253 (1996). |
Von Rottkay, K. et al., “Influences of stoichiometry on electrochromic cerium-titanium oxide compounds,” Presented at the 11th Int'l Conference of Solid State Ionics, Honolulu, Hawaii, Nov. 19, 1997, Published in Solid State Ionics 113-115:425-430. (1998). |
Westlinder, J. et al., “Simulations and Dielectric Characterization of Reactive dc Magnetron Cosputtered (Ta2O5)1-X(TiO2)X Thin Films,” J Vac. Sci. Technol. B 20(3):855-861 (May/Jun. 2002). |
Wilkes, K.E., “Gas Permeation Through Vacuum Barrier Films and its Effect on VIP Thermal Performance,” presented at the Vacuum Insulation Panel Symp., Baltimore, Maryland, 21 pages (May 3, 1999). |
Yanagawa, H. et al., “Index-and-Dimensional Taper and Its Application to Photonic Devices,” J. Lightwave Technology 10(5):587-591 (1992). |
Yoshikawa, K. et al., “Spray formed aluminum alloys for sputtering targets,” Powder Metallurgy 43(3): 198-199 (2000). |
Zhang, H. et al., “High Dielectric Strength, High k TiO2 Films by Pulsed DC, Reactive Sputter Deposition,” 5 pages (2001). |
Sarro, P., “Silicon Carbide as a New MEMS Technology,” Sensors and Actuators 82, 210-218 (2000). |
Bates et al., “Thin-Film Lithium Batteries,” in New Trends in Electrochemical Technology: Energy Storage Systems for Electronics (T. Osaka & M. Datta eds. Gordon and Breach 2000). |
Wang et al., “Characterization of Thin-Film Rechargeable Lithium Batteries with Lithium Cobalt Oxide Cathodes,” 143 J. Electrochem. Soc. 3203-13 (1996). |
Dobkin, D.M., “Silicon Dioxide: Properties and Applications”. |
Restriction Requirement dated Feb. 22, 2010, in U.S. Appl. No. 11/687,032. |
Response to Restriction Requirement dated Mar. 26, 2010, in U.S. Appl. No. 11/687,032. |
Non-Final Rejection dated Jul. 9, 2010, in U.S. Appl. No. 11/687,032. |
Amendment/Response to Non-Final Office Action dated Oct. 11, 2010, in U.S. Appl. No. 11/687,032. |
Non-Final Rejection dated Dec. 28, 2010, in U.S. Appl. No. 11/687,032. |
Response to Office Action dated Apr. 5, 2011, in U.S. Appl. No. 11/687,032. |
Non-Final Rejection dated May 13, 2011, in U.S. Appl. No. 12/764,180. |
Notice of Allowance dated Jun. 24, 2011, in U.S. Appl. No. 11/687,032. |
Examiner's Amendment dated Jul. 28, 2011, in U.S. Appl. No. 11/687,032. |
Hill, R et al., “Large Area Deposition by Mid-Frequency AC Sputtering,” Society of Vacuum Coaters, 41 St Annual Tech. Conference Proceedings, 197-202 (1998). |
Macak, Karol et al., “Ionized Sputter Deposition Using an Extremely High Plasma Density Pulsed Magnetron Discharge,” J. Vac. Sci. Technol. A 18(4):1533-37 (2000). |
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 817-820 (John Wiley & Sons, Inc. Publication, 2005). |
Inaguma, Yoshiyuki, “High Ionic Conductivity in Lithium Lanthanum Titanate,” Solid State Communications,vol. 86, No. 10, pp. 689-693 (1993). |
Guy, D., “Novel Architecture of Composite Electrode for Optimization of Lithium Battery Performance,” Journal of Power Sources 157, pp. 438-442 (2006). |
Wolfenstine, J., “Electrical Conductivity and Charge Compensation in Ta Doped Li4Ti5O12,” Journal of Power Sources 180, pp. 582-585 (2008). |
Balanis, Constantine A., “Antenna Theory: Analysis and Design,” 3rd Ed., pp. 811-820 (2005). |
Jones and Akridge, “A thin film solid state microbattery,” Solid State Ionics 53-56 (1992), pp. 628-634. |
Amendment/Response to Non-Final Office Action dated Aug. 12, 2011, in U.S. Appl. No. 12/764,180. |
Notice of Allowance dated Oct. 24, 2011, in U.S. Appl. No. 11/687,032. |
Final Office Action dated Nov. 8, 2011, in U.S. Appl. No. 12/764,180. |
Applicant Initiated Interview Summary dated Dec. 6, 2011, in U.S. Appl. No. 12/764,180. |
Amendment/Response to Final Office Action dated Jan. 6, 2012 in U.S. Appl. No. 12/764,180. |
Advisory Action dated Jan. 19, 2012 in U.S. Appl. No. 12/764,180. |
Adachi et al., Thermal and Electrical Properties of Zirconium Nitride, 2005, Journal of Alloys and Compounds, 399, pp. 242-244. |
Pichon et al., Zirconium Nitrides Deposited by Dual Ion Beam Sputtering: Physical Properties and Growth Modelling, 1999, Applied Surface Science, 150, pp. 115-124. |
Tarniowy et al., The effect of thermal treatment on the structure, optical and electrical properties of amorphous titanium nitride thin films,Thin Solid Films, vol. 311, (1997), pp. 93-100. |
Starner, “Human-powered wearable computing” 35 (3 & 4) IBM Sys. J. 618-29 (1996). |
Celgard products description. retrieved from http://celgard.com/pdf/library/Celgard—Product—Comparison—10002.pdf on Jun. 17, 2011. |
Number | Date | Country | |
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20080261107 A1 | Oct 2008 | US |