Claims
- 1. An optical device comprising:
a freestanding membrane comprising a plurality of thin-film layers represented by L(i), i=1, 2, 3, . . . , N where N is a positive odd integer; and said membrane having a mirror symmetrical layer structure relative to a middle layer L(m) where m=(N+1)/2, and layer L(m−j) and layer L(m+j) having a same thickness, material composition, shape and size, where j=1, 2, 3, . . . ,(N−1)/2.
- 2. The optical device of claim 1 further comprising:
an electromagnetic means for controlling and moving said freestanding membrane.
- 3. The optical device of claim 1 wherein:
said layers L(i) having an alternate high-low refraction index configuration with layers L(iH) having a set of relatively higher refraction indexes and layers L(iL) having a set of relatively lower refraction indexes where iH=1, 3, 5, N and iL=2, 4, 6, . . . , (N−1).
- 4. The optical device of claim 1 wherein:
said layers L(i) having an alternate high-low refraction index configuration with layers L(iH) having a set of relatively higher refraction indexes and layers L(iL) having a set of relatively lower refraction indexes where iL=1, 3, 5, . . . ,N and iH=2,4,6, . . . , (N−1).
- 5. The optical device of claim 1 further comprising:
a resonant cavity supported on a silicon substrate covered by said freestanding membrane.
- 6. The optical device of claim 5 further comprising:
an antireflection (AR) layer coated on the bottom of said silicon substrate.
- 7. The optical device of claim 1 wherein:
at least one of said layers L(i), i=1, 2, 3, . . . N, is a polysilicon layer.
- 8. The optical device of claim 1 wherein:
at least one of said layers L(i), i=1, 2, 3, . . . N, is a silicon nitride layer.
- 9. The optical device of claim 1 further comprising:
a HR coating layer coated on said freestanding membrane.
- 10. A freestanding membrane comprising:
a plurality of thin-film layers represented by L(i), i=1, 2, 3, . . . , N where N is a positive odd integer; and said thin film layers having a mirror symmetrical layer structure relative to a middle layer L(m) where m=(N+1)/2, and layer L(m−j) and layer L(m+j) having a same thickness, material composition, shape and size, where j=1, 2, 3, . . . ,(N−1)/2.
- 11. An method for manufacturing an optical device comprising:
forming a freestanding membrane with a plurality of thin-film layers represented by L(i), i=1, 2, 3, . . . , N where N is a positive odd integer; and configuring said thin film layers with a mirror symmetrical layer structure relative to a middle layer L(m) where m=(N+1)/2, and layer L(m−j) and layer L(m+j) having a same thickness, material composition, shape and size, where j=1, 2, 3, . . . ,(N−1)/2.
- 12. The method of claim 11 further comprising:
controlling and moving said freestanding membrane with an electromagnetic means.
- 13. The method of claim 11 wherein:
said step of configuring said thin film layers further comprising a step of configuring said layers L(i) with an alternate high-low refraction index configuration with layers L(iH) having a set of relatively higher refraction indexes and layers L(iL) having a set of relatively lower refraction indexes where iH=1, 3, 5, N and iL=2, 4, 6, . . . , (N−1).
- 14. The method of claim 11 wherein:
said step of configuring said thin film layers further comprising a step of configuring said layers L(i) with an alternate high-low refraction index configuration with layers L(iH) having a set of relatively higher refraction indexes and layers L(iL) having a set of relatively lower refraction indexes where iL=1, 3, 5, . . . ,N and iH=2, 4, 6, . . . , (N−1).
- 15. The method of claim 11 further comprising:
supporting a resonant cavity on a silicon substrate and covering said resonant cavity with said freestanding membrane.
- 16. The method of claim 11 further comprising:
coating an antireflection (AR) layer on the bottom of said silicon substrate.
- 17. The method of claim 11 wherein:
said step of configuring said thin-film layers further comprising a step of forming a polysilicon layer for at least one of said layers L(i), i=1, 2, 3, . . . N.
- 18. The method of claim 11 wherein:
said step of configuring said thin-film layers further comprising a step of forming a silicon nitride layer for at least one of said layers L(i), i=1, 2, 3, . . . N.
- 19. The method of claim 11 further comprising:
coating a HR coating layer on said freestanding membrane.
- 20. A method of forming a freestanding membrane comprising:
forming a plurality of thin-film layers represented by L(i), i=1, 2, 3, . . . , N where N is a positive odd integer; and configuring said thin film layers with a mirror symmetrical layer structure relative to a middle layer L(m) where m=(N+1)/2, and layer L(m−j) and layer L(m+j) having a same thickness, material composition, shape and size, where j=1, 2, 3, . . . ,(N−1)/2.
Parent Case Info
[0001] This Application claims a priority date of Sep. 6, 2001 benefited from a previously filed Provisional Patent Application 60/317,721 filed on Sep. 6, 2001 by the Applicants of this Formal Patent Application.
Provisional Applications (1)
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Number |
Date |
Country |
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60317721 |
Sep 2001 |
US |