Patent Application
20240132503
The present disclosure relates to a salt form and a crystal form of a pyrazole-substituted imidazo[1,2-a]quinoxaline derivative and a preparation method of the same.
Spleen tyrosine kinase (Syk) is an intracellular tyrosine protein kinase belonging to a ZAP70 protein kinase family, and is crucial in early development of B cells, ontogeny of lymphocytes, and the functioning of mature B cells. In these processes, Syk participates in various signal transduction pathways and can function without being phosphorylated via Src kinase. Syk is expressed in non-hematopoietic cells such as epithelial cells, liver cells, fibroblasts, nerve cells and breast tissue in addition to hematopoietic stem cells, and has multiple functions. Dysfunctions of Syk PTK exist in many human diseases such as allergic reactions, asthma, inflammations and autoimmune diseases, and many studies have revealed that Syk is an important mediator in acute or chronic inflammations.
VEGFR2, also known as KDR or Flk-1, is identified as a receptor of VEGF and VEGFC, which serves as an early marker of endothelial cell progenitor cells, and is exclusively expressed in endothelial cells in vivo. VEGFR2 has been shown to be a main signal transducer for angiogenesis and development of pathological conditions (for example, cancer and diabetic retinopathy). Studies have shown that anti-VEGF can inhibit expression and activation of pro-inflammatory factors, thereby reducing ocular surface inflammation. VEGFR2 transduces the main signal of angiogenesis by virtue of its strong tyrosine kinase activity. However, unlike other representative tyrosine kinase receptors, VEGFR2 does not use a Ras pathway for main downstream signaling. Instead, VEGFR2 uses the phospholipase C-protein kinase C pathway for mitogen-activated protein (MAP) kinase activation and DNA synthesis. Therefore, inhibiting VEGFR2 activity and its downstream signaling is a crucial target for the treatment of diseases involving angiogenesis, inflammations, and so on.
Therefore, Syk and VEGFR-2 activity can be inhibited for treating allergic diseases, autoimmune diseases and inflammatory diseases, including, but not limited to, dry eye disease and allergic conjunctivitis, retinal inflammatory disease, age-related macular degeneration (AMD), proliferative diabetic retinopathy (PDR), retinopathy of prematurity (ROP), cancer, rheumatoid arthritis, glomerulonephritis, multiple vasculitides, idiopathic thrombocytopenia purpura (ITP), myasthenia gravis, allergic rhinitis, chronic obstructive pulmonary disease (COPD), adult respiratory distress syndrome (ARDs) and asthma.
The present disclosure provides a crystal form A of a compound of formula (I), where an X-ray powder diffraction pattern of the crystal form A under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 14.14±0.20°, 16.76±0.20°, 17.55±0.20°, and 21.84±0.20°,
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form A under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 14.14±0.20°, 15.36±0.20°, 16.76±0.20°, 17.55±0.20°, 21.84±0.20°, 23.49±0.20°, and 24.42±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form A under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 14.14±0.20°, 15.36±0.20°, 16.76±0.20°, 17.55±0.20°, 21.25±0.20°, 21.84±0.20°, 23.49±0.20°, 24.42±0.20°, 28.37±0.20°, and 30.15±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form A under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 14.14±0.20°, and 16.76±0.20°, and may also have characteristic diffraction peaks at 15.36±0.20°, and/or 17.55±0.20°, and/or 21.25±0.20°, and/or 21.84±0.20°, and/or 23.49±0.20°, and/or 24.42±0.20°, and/or 28.37±0.20°, and/or 30.15±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form A under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96°, 14.14°, 15.36°, 16.21°, 16.76°, 17.55°, 17.96°, 21.25°, 21.84°, 23.49°, 24.42°, 28.37°, and 30.15°.
In some embodiments of the present disclosure, an XRPD pattern of the crystal form A is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form A under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 1 below:
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form A has an endothermic peak at 332.4° C.±3° C.
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form A has endothermic peaks at 283.7° C.±3° C. and 332.4° C.±3° C.
In some embodiments of the present disclosure, a DSC pattern of the crystal form A is shown in
In some embodiments of the present disclosure, a thermal gravimetric analysis (TGA) curve of the crystal form A has a weight loss of 2.41±0.20% at 250.0° C.±3° C.
In some embodiments of the present disclosure, a TGA pattern of the crystal form A is shown in
The present disclosure further provides a crystal form B of a compound of formula (I), where an X-ray powder diffraction pattern of the crystal form B under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 12.14±0.20°, 19.52±0.20°, 22.08±0.20°, and 28.22±0.20°,
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form B under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.35±0.20°, 12.14±0.20°, 14.69±0.20°, 18.26±0.20°, 19.52±0.20°, 22.08±0.20°, and 28.21±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form B under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.35±0.20°, 12.14±0.20°, 14.69±0.20°, 16.70±0.20°, 18.26±0.20°, 19.52±0.20°, 22.08±0.20°, 26.55±0.20°, 27.31±0.20°, and 28.21±0.20°.
In some embodiments of the present disclosure, an XRPD pattern of the crystal form B is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form B under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 2 below:
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form B has an endothermic peak at 331.8±3° C.
In some embodiments of the present disclosure, a DSC pattern of the crystal form B is shown in
In some embodiments of the present disclosure, a thermal gravimetric analysis (TGA) curve of the crystal form B has a weight loss of 4.11±0.20% at 300.0° C.±3° C.
In some embodiments of the present disclosure, a TGA pattern of the crystal form B is shown in
The present disclosure further provides a preparation method of a crystal form B, where the method comprises the following steps:
The present disclosure further provides a pharmaceutically acceptable salt of a compound of formula (I), where the pharmaceutically acceptable salt is a hydrate, maleate or gentisate,
In some embodiments of the present disclosure, the pharmaceutically acceptable salt of the compound of formula (I) is a hydrate, maleate or gentisate, and has a structure represented by formula (II), formula (III) or formula (IV),
wherein, m is selected from 3.0 to 5.0, n is selected from 0.7 to 1.3, and p is selected from 0.7 to 1.3.
In some embodiments of the present disclosure, m is selected from 3.0, 3.5, 4.0, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, and 5.0; n is selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3; and p is selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3.
In some embodiments of the present disclosure, the compound of formula (II), formula (III) or formula (IV) is selected from the group consisting of:
The present disclosure further provides a crystal form C of a compound of formula (II-1), where an X-ray powder diffraction pattern of the crystal form C under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 6.53±0.20°, 12.05±0.20°, and 13.05±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form C under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 6.53±0.20°, 12.05±0.20°, 13.05±0.20°, 20.87±0.20°, and 24.02±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form C under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 6.53°, 12.05°, 13.05°, 14.84°, 17.89°, 20.87°, 24.02°, and 26.84°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form C is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form C under Cu Kα radiation, peak positions and relative intensities of the diffraction peaks are shown in Table 3 below:
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form C has endothermic peaks at 58.8±3° C. and 331.4±3° C.
In some embodiments of the present disclosure, a DSC pattern of the crystal form C is shown in
The present disclosure further provides a preparation method of the crystal form C, where the method includes the following steps:
The present disclosure further provides a crystal form D of a compound of formula (III-1), where an X-ray powder diffraction pattern of the crystal form D under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.26±0.20°, 11.99±0.20°, 12.72±0.20°, and 14.52±0.20°,
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form D under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.26±0.20°, 10.06±0.20°, 11.99±0.20°, 12.72±0.20°, 14.52±0.20°, 16.17±0.20°, and 20.23±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form D under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.26±0.20°, 10.06±0.20°, 11.99±0.20°, 12.72±0.20°, 14.52±0.20°, 16.17±0.20°, 16.75±0.20°, 20.23±0.20°, 20.83±0.20°, and 24.09±0.20°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form D is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form D under Cu Kα radiation, peak positions and relative intensities of the diffraction peaks are shown in Table 4 below:
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form D has endothermic peaks at 72.0° C.±3° C., 136.0° C.±3° C. and 207.0° C.±3° C.
In some embodiments of the present disclosure, a DSC pattern of the crystal form D is shown in
In some embodiments of the present disclosure, a thermal gravimetric analysis (TGA) curve of the crystal form D has a weight loss of 4.73±0.20% at 150.0° C.±3° C.
In some embodiments of the present disclosure, a TGA pattern of the crystal form D is shown in
In some embodiments of the present disclosure, an 1H NMR pattern of the crystal form D is shown in
The present disclosure further provides a crystal form E of a compound of formula (IV-1), where an X-ray powder diffraction pattern of the crystal form E under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 12.20±0.20°, 18.73±0.20°, 22.20±0.20°, 24.10±0.20°, and 24.58±0.20°,
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form E under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.47±0.20°, 12.20±0.20°, 13.72±0.20°, 18.73±0.20°, 22.20±0.20°, 24.10±0.20°, 24.58±0.20°, and 27.62±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form E under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.47±0.20°, 10.61±0.20°, 12.20±0.20°, 13.72±0.20°, 14.99±0.20°, 18.73±0.20°, 19.53±0.20°, 20.83±0.20°, 22.20±0.20°, 24.10±0.20°, 24.58±0.20°, and 27.62±0.20°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form E is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form E under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 5 below:
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form E has an endothermic peak at 291.4±3° C.
In some embodiments of the present disclosure, a differential scanning calorimetry (DSC) curve of the crystal form E has endothermic peaks at 97.2±3° C. and 291.4±3° C.
In some embodiments of the present disclosure, a DSC pattern of the crystal form E is shown in
In some embodiments of the present disclosure, a thermal gravimetric analysis (TGA) curve of the crystal form E has a weight loss of 6.72±0.20% at 150.0° C.±3° C.
In some embodiments of the present disclosure, a TGA pattern of the crystal form E is shown in
In some embodiments of the present disclosure, an 1H NMR pattern of the crystal form E is shown in
The present disclosure further provides a pharmaceutically acceptable salt of the compound of formula (I), where the pharmaceutically acceptable salt is hydrochloride, sulfate, phosphate, p-toluenesulfonate, or hydrobromide,
In some embodiments of the present disclosure, the pharmaceutically acceptable salt of the compound of formula (I) is hydrochloride, sulfate, phosphate, p-toluenesulfonate, or hydrobromide, and has a structure represented by formula (V), formula (VI), formula (VII), formula (VIII) or formula (IX),
wherein, p is selected from 0.7 to 2.3, q is selected from 0.7 to 1.3, r is selected from 0.7 to 2.3, s is selected from 0.7 to 1.3, and t is selected from 0.7 to 2.3.
In some embodiments of the present disclosure, p is selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, and 2.3; q is selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3; r selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, and 2.3; s selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, and 1.3; and t selected from 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0, 2.1, 2.2, and 2.3.
In some embodiments of the present disclosure, the compound of formula (V), formula (VI), formula (VII), formula (VIII) or formula (IX) has a structure represented by formula (V-1), formula (V-2), formula (VI-1), formula (VII-1), formula (VII-2), formula (VIII-1), formula (IX-1) or formula (IX-2),
The present disclosure further provides a crystal form F of a compound of formula (V-1), where an X-ray powder diffraction pattern of the crystal form F under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.94±0.20°, 15.42±0.20°, and 16.71±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form F under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 9.42°, 11.94°, 14.11°, 15.42°, and 16.71°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form F is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form F under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 6 below:
The present disclosure further provides a crystal form G of a compound of formula (V-2), where an X-ray powder diffraction pattern of the crystal form G under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.08±0.20°, 7.94±0.20°, 12.59±0.20°, 20.35±0.20°, and 26.35±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form G under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 7.08±0.20°, 7.94±0.20°, 12.59±0.20°, 13.55±0.20°, 15.59±0.20°, 16.90±0.20°, 20.35±0.20°, and 26.35±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form G under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 6.77°, 7.08°, 7.94°, 11.80°, 12.59°, 13.55°, 15.59°, 16.90°, 17.74°, 20.35°, 22.66°, and 26.35°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form G is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form G under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 7 below:
The present disclosure further provides a crystal form H of a compound of formula (VI-1), where an X-ray powder diffraction pattern of the crystal form H under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 12.83±0.20°, 20.25±0.20°, and 20.95±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form H under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96±0.20°, 12.83±0.20°, 13.45±0.20°, 16.75±0.20°, 20.25±0.20°, 20.95±0.20°, 24.02±0.20°, and 24.45±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form H under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.96°, 12.83°, 13.45°, 16.75°, 18.04°, 20.25°, 20.95°, 23.39°, 24.02°, and 24.45°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form H is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form H under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 8 below:
The present disclosure further provides a crystal form I of a compound of formula (VII-1), where an X-ray powder diffraction pattern of the crystal form I under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 5.12±0.20°, 11.49±0.20°, 15.44±0.20°, 20.62±0.20°, and 21.98±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form I under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 5.12±0.20°, 11.49±0.20°, 15.44±0.20°, 18.58±0.20°, 20.62±0.20°, 21.98±0.20°, 22.98±0.20°, and 25.87±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form I under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 5.12±0.20°, 11.49±0.20°, 15.44±0.20°, 16.26±0.20°, 18.58±0.20°, 19.05±0.20°, 20.62±0.20°, 21.98±0.20°, 22.98±0.20°, 24.33±0.20°, 25.87±0.20°, and 27.23±0.20°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form I is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form I under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 9 below:
The present disclosure further provides a crystal form J of a compound of formula (VII-2), where an X-ray powder diffraction pattern of the crystal form J under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 13.24±0.20°, 24.70±0.20°, and 25.57±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form J under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 9.66±0.20°, 13.24±0.20°, 20.17±0.20°, 24.70±0.20°, and 25.57±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form J under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 9.66±0.20°, 13.24±0.20°, 14.53±0.20°, 16.06±0.20°, 18.90±0.20°, 20.17±0.20°, 24.70±0.20°, and 25.57±0.20°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form J is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form J under Cu Kα radiation, peak positions and relative intensities of the diffraction peaks are shown in Table 10 below:
The present disclosure further provides a crystal form K of a compound of formula (VIII-1), where an X-ray powder diffraction pattern of the crystal form K under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 4.89±0.20°, 9.78±0.20°, and 16.04±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form K under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 4.89°, 9.78°, 10.42°, 12.05°, 14.71°, and 16.04°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form K is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form K under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 11 below:
The present disclosure further provides a crystal form L of a compound of formula (VIII-1), where an X-ray powder diffraction pattern of the crystal form L under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 4.62±0.20°, 13.87±0.20°, and 18.52±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form L under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 4.62±0.20°, 13.87±0.20°, 18.52±0.20°, 19.17±0.20°, and 23.23±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form L under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 4.62°, 13.87°, 18.52°, 19.17°, 19.73°, 21.21°, 23.23°, 25.41°, 32.26°, and 34.34°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form L is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form L under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 12 below:
The present disclosure further provides a crystal form M of a compound of formula (IX-1), where an X-ray powder diffraction pattern of the crystal form M under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 10.01±0.20°, 11.95±0.20°, and 23.57±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form M under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 10.01±0.20°, 11.95±0.20°, 14.12±0.20°, 16.72±0.20°, and 23.57±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form M under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 10.01°, 11.95°, 14.12°, 16.72°, 17.57°, 21.63°, and 23.57°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form M is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form M under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 13 below:
The present disclosure further provides a crystal form N of a compound of formula (IX-2), where an X-ray powder diffraction pattern of the crystal form N under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.95±0.20°, 17.68±0.20°, 23.87±0.20°, 26.47±0.20°, and 27.04±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form N under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 11.95±0.20°, 15.42±0.20°, 17.68±0.20°, 18.16±0.20°, 23.87±0.20°, 25.60±0.20°, 26.47±0.20°, and 27.04±0.20°.
In some embodiments of the present disclosure, an X-ray powder diffraction pattern of the crystal form N under Cu Kα radiation has characteristic diffraction peaks at 2θ angles of 6.62±0.20°, 11.95±0.20°, 15.42±0.20°, 17.68±0.20°, 18.16±0.20°, 19.26±0.20°, 23.87±0.20°, 25.60±0.20°, 26.47±0.20°, 27.04±0.20°, and 28.33±0.20°.
In some embodiments of the present disclosure, the X-ray powder diffraction pattern of the crystal form N is shown in
In some embodiments of the present disclosure, in the XRPD pattern of the crystal form N under Cu Kα radiation, the peak positions and relative intensities of the diffraction peaks are shown in Table 14 below:
The present disclosure further provides use of the crystal form A, the crystal form B, the crystal form C, the crystal form D or the crystal form E in preparation of a spleen tyrosine kinase (Syk) and vascular endothelial growth factor 2 (VEGFR2) dual inhibitor-related drug.
The crystal forms of the compounds of the present disclosure have good inhibitory activity on both Syk and KDR (VEGFR-2) and have good pharmacokinetic properties, including a good eye-to-blood ratio, tissue exposure, etc. The preparation processes of the salt forms and the crystal forms of the compounds of the present disclosure are simple, and the crystal forms are stable and less affected by heat and light, and are easy to prepare.
Unless otherwise stated, terms and phrases used below in the description have the following meanings. A specific phrase or term that is not specifically defined should not be considered to be indeterminate or unclear, but should be understood as a common meaning. A commodity name herein is intended to refer to a corresponding commodity or an active ingredient thereof.
An intermediate compound in the present disclosure can be prepared in various synthesis methods well known to persons skilled in the art, including specific embodiments listed below, embodiments formed in combination with other chemical synthesis methods, and equivalent replacements and so on known to persons skilled in the art. Preferred embodiments include but are not limited to examples of the present disclosure.
Chemical reactions in the specific embodiments of the present disclosure are completed in a suitable solvent, and the solvent should be a reagent and a material that are suitable for chemical changes in the present disclosure and meet requirements thereof. In order to obtain the compound in the present disclosure, persons skilled in the art need to modify or select synthesis steps or reaction procedures based on existing embodiments.
The present disclosure is specifically described via examples below, and these examples do not indicate any limitation on the present disclosure.
A structure of the compound in the present disclosure can be confirmed in conventional methods known to persons skilled in the art. If the present disclosure involves an absolute configuration of the compound, the absolute configuration can be confirmed in a conventional technical means in the art. For example, during single crystal X-ray diffraction (SXRD), the diffraction intensity data of a cultured single crystal is collected with a Bruker D8 venture diffractometer, a light source is Cu Kα radiation, and a scanning method is φ/ω scanning. After relevant data is collected, a crystal structure is further analyzed in a direct method (Shelxs97), which can ensure the absolute configuration.
The following abbreviations are used in the present disclosure:
ACN stands for acetonitrile; and DMSO stands for dimethylsulfoxide. N2: nitrogen; RH: relative humidity; mL: milliliter; L: liter; min: minute; ° C.: degree Celsius; μm: micrometer; mm: millimeter; μL: microliter; moL/L: mole per liter; mg: milligram; s: second; nm: nanometer; MPa: megapascal; lux: lux; μw/cm2: microwatt per square centimeter; h: hour; Kg: kilogram; nM: nanomole, rpm: revolutions per minute; XRPD stands for X-ray powder diffraction; DSC stands for differential scanning calorimetry; TGA stands for thermal gravimetric analysis; and 1H NMR stands for proton nuclear magnetic resonance.
The compound in the present disclosure is named based on a conventional naming principle in the art or by using ChemDraw® software, and a name in the supplier catalogue is used for a commercially available compound. All solvents used in the present disclosure are commercially available.
Test method: About 10 mg of sample is used for XRPD detection.
Detailed XRPD instrument information and parameters are shown in Table 15 below:
Detailed DSC instrument information and test method are shown in Table 16 below:
Detailed TGA instrument information and test method are shown in Table 17 below:
A gradient program is shown in Table 18 below:
The following examples are used to describe the present disclosure in detail, but do not imply any unfavorable limitation on the present disclosure. The present disclosure is described in detail herein, and specific embodiments are also disclosed. Various changes and improvements made to the specific embodiments of the present disclosure without departing from the spirit and scope of the present disclosure are obvious to persons skilled in the art.
16 L of dimethyl sulfoxide was first added to a reactor with a volume of 50 L. Mechanical stirring was started with a rotation speed of 150 rpm at an internal temperature shown as 15° C. Then 1950 g of compound 1a, 1230 g of 1H-imidazole-2-carboxylate methyl ester and 1880 g of sodium carbonate were added in sequence, heating was started, and an external heating temperature was set to 82° C. After stirring at an internal temperature of 78° C.-80° C. for 16 hours, the heating was ended, and the reaction solution was cooled to 30° C. The reaction solution was slowly added into 30 L of water while being stirred, and a large amount of yellow solid was precipitated. The external temperature was set to 10° C. and a resulting mixture was stirred for 50 minutes at 100 rpm. Filtration was started at an internal temperature shown as 15° C. to obtain a filtered solid which was vacuum-dried to obtain compound 1b.
1NMR (400 MHz, DMSO-d6) δ ppm 8.12 (d, J=8.5 Hz, 1H), 8.04 (d, J=J=2.0 Hz, 1H), 7.98 -7.93 (m, 1H), 7.45 (s, 1H), 7.09 (s, 1H), 3.86 (s, 3H).
18 L of ethanol and 4.5 L of water were first added to a reactor with a volume of 50 L. Stirring was started with a rotation speed of 150 rpm at an internal temperature shown as 15° C. Then 1665 g of the compound 1b, 1656 g of thiourea dioxide and 859.5 g of sodium bicarbonate were added in sequence. Heating was started, an external heating temperature was set to 65° C., and gas was discharged when the internal temperature rose to 60° C.-65° C. The temperature was maintained for 1 hour, and when no gas was discharged any more, the external temperature was raised to 80° C. After stirring for 16 hours, the heating was ended, and the reaction solution was cooled to 25° C. The reaction solution was slowly added into 25 L of water in two batches separately while being stirred, and a large amount of solid was precipitated. The external temperature was set to 10° C., after 30 minutes of stirring, filtration was started at an internal temperature shown as 15° C. The precipitated solid was added back into the reactor, stirring was started, 30 L of water was added, the internal temperature was raised to 65° C. via heating, and after 16 hours of stirring, the reaction solution was filtered immediately to obtain a filter cake which was vacuum-dried to obtain compound 1c.
1H NMR (400 MHz, DMSO-d6) δ ppm 11.95 (s, 1H), 8.61 (d, J=1.0 Hz, 1H), 8.45 (d, J=2.0 Hz, 1H), 7.62-7.54 (m, 1H), 7.34-7.25 (m, 1H).
After an exhaust gas absorption device was established, 13.5 L of 1,4-dioxane was added to a reactor with a volume of 50 L. Stirring was started with a rotation speed of 150 rpm at an internal temperature shown as 15° C. Heating was started, an external heating temperature was set to 40° C., and then 900 g of the compound 1c and 825.98 g of N,N-dimethylaniline were added in sequence. 2610 g of phosphorus oxychloride was added dropwise with a constant pressure dropping funnel, and the internal temperature was controlled between 35° C. and 40° C. After the addition of the phosphorus oxychloride, the reaction solution was stirred at an internal temperature of 90° C.-92° C. for 16 hours, then the heating was ended, and the reaction solution was cooled to 25° C. The reaction solution was slowly added into 15 L of water in batches while being stirred. The external temperature was set to 30° C., the reaction solution was stirred for 1 hour, and 4 M sodium hydroxide aqueous solution was slowly added at an internal temperature of 15° C.-20° C. to adjust pH to 7. After being heated to an internal temperature of 30° C., the reaction solution was stirred for 30 minutes again and filtered to obtain a filter cake which was vacuum-dried to obtain compound 1d.
1H NMR (400 MHz, DMSO-d6) δ=, 9.01 (s, 1H), 8.80 (d, J=2.0 Hz, 1H), 7.95 (d, J=8.8 Hz, 1H), 7.91 (s, 1H), 7.84 (dd, J=2.0, 8.8 Hz, 1H).
9 L of dimethyl sulfoxide was added to a reactor with a volume of 50 L at 20° C. Stirring was started at a rotation speed of 150 rpm. 620.24 g of 4-morpholine aniline, 1124.4 g of N, N-diisopropylethanamine and 820.00 g of the compound id were added sequentially. The reaction solution was stirred for 24 hours at an internal temperature of 95° C.-100° C. The heating was ended, and the reaction solution was cooled to 25° C. The reaction solution was slowly added into 30 L of water while being stirred. The external temperature was set to 10° C., the reaction solution was stirred for 0.5 hours and filtered to obtain a filter cake which was put into the reactor again, and 9 L of isopropanol was added into the reactor. The reaction solution was stirred for 1 hour at an internal temperature of 82° C. The reaction solution was filtered immediately to obtain a filter cake which was washed with 2 L of hot isopropanol, and vacuum-dried at 40° C.-50° C. for 12 hours to obtain compound 1e.
1H NMR (400 MHz, DMSO-d6) δ ppm 9.65 (s, 1H), 8.74 (d, J=1.0 Hz, 1H), 8.48 (s, 1H), 7.99 (d, J=9.0 Hz, 2H), 7.59-7.55 (m, 2H), 7.08-6.91 (m, 3H), 3.78-3.72 (m, 4H), 3.10-3.05 (m, 4H).
4 L of dimethyltetrahydrofuran was added to a reactor with a volume of 50 L. Stirring was started at a rotation speed of 150 rpm. An external temperature was set to 5° C. 500.00 g of 4-pyrazoleboronic acid pinacol ester, 333.00 g of N,N-diisopropylethanamine were added sequentially. 558.00 g of (2-(chloromethoxy)ethyl)trimethylsilane was added dropwise with a constant pressure dropping funnel at internal temperature of 5° C.-8° C. After the addition of the (2-(chloromethoxy)ethyl)trimethylsilane, the external temperature was set to 20° C., and the reaction solution was stirred for 3 hours. Then 3.2 L of dimethyltetrahydrofuran, 1.8 L of water, 880.00 g of compound 1e, 640.00 g of potassium carbonate and 85.00 g of 1,1-bis(diphenylphosphino)ferrocene-dichloropalladium were further added to the reactor. The external temperature was set to 85° C. after nitrogen was injected into the reactor for displacement for 20 minutes. The reaction solution was stirred for 16 hours at an internal temperature of 80° C.-82° C. After the reaction solution was cooled to an internal temperature of 20° C., 2 L of water and 15 L of n-heptane were added into the reactor while being stirred. After being stirred for 20 minutes, the reaction solution was filtered to obtain a filter cake which was dried to obtain 1200 g of crude compound 1f. Then the crude compound 1f was added into a reactor with a volume of 50 L and 12 L of dimethyltetrahydrofuran was added. Heating was started and the external temperature was set to 80° C. After the solid was dissolved, 360.00 g of activated carbon was added. The reaction solution was stirred for 16 hour at an internal temperature of 80° C. The reaction solution was filtered to obtain a filtrate which was cooled to 15° C.-20° C., and 20 L of n-heptane was added. The reaction solution was stirred at 15° C.-20° C. for 16 hours and filtered to obtain a filter cake which was vacuum-dried to obtain compound 1f.
7 L of 1 M tetrabutylammonium fluoride solution in tetrahydrofuran was added to a reactor with a volume of 50 L, and stirring was started at a rotation speed of 150 rpm. 700.00 g of the compound 1f and 77.69 g of ethylenediamine were added sequentially. An external temperature was set to 72° C., and the reaction solution was stirred for 16 hours at an internal temperature of 67° C. 5.6 L of tetrahydrofuran was further added into the reactor, and the reaction solution was stirred at an internal temperature of 40° C. for 2 hours, and then the reaction solution was stirred at 30° C. for 2 hours, and then stirred at 20° C. for 16 hours. The reaction solution was filtered to obtain a filter cake which was added back into the reactor, and 10 L of water and 5 L of ethanol were added and the mixture was stirred at an internal temperature of 60° C. for 16 hours. The reaction solution was filtered immediately to obtain a filter cake which was vacuum-dried to a constant weight to obtain the crystal form A of the compound of formula (I).
1H NMR (400 MHz, DMSO-d6) δ: 8.81 (s, 1H), 8.43 (s, 1H), 8.23 (s, 2H), 7.92 (d, J=8.8 Hz, 2H), 7.80 (s, 1H), 7.77-7.72 (m, 1H), 7.71-7.63 (m, 1H), 7.07 (d, J=8.8 Hz, 2H), 3.79-3.76 (m, 4H), 3.16 (br. s., 4H); MS (ESI) m/z: 412 [M+H]+.
19.1 mg of the solid crystal form A of the compound of formula (I) was weighed and added into a 3.0 mL glass vial, and 0.5 mL of dimethylacetamide was added to dissolve the solid to obtain a clear solution. A 3.0 mL opened glass vial containing the clear solution was placed in a 20 mL glass bottle filled with 3 mL of acetone in advance. After being sealed, the glass bottle was placed at room temperature for three days for gas and liquid penetration, a supernatant was removed with a straw, and a remaining solid was dried at room temperature in the glass bottle which was opened for five days to obtain the solid. Then an appropriate amount of solid was weighed and added into an aluminum crucible with a cover, and the solid was heated from room temperature to 150° C. at a heating rate of 10° C./min under protection of dry nitrogen injected at 50 mL/min, and then cooled down to room temperature. The crystal form B of the compound of formula (I) was obtained via XRPD detection.
20.1 mg of the solid crystal form A of the compound of formula (I) was weighed and added into a glass vial, 3.0 mL of tetrahydrofuran/water (volume ratio: 4:1) was added to dissolve the solid, and a sample solution was filtered with a polytetrafluoroethylene filter membrane with a 0.45 micron pore size into a new 3.0 mL glass vial to obtain a clear solution which was slowly evaporated at room temperature for three days to obtain a solid when the solvent was removed by evaporation. The crystal form C of the compound of formula (II-1) was obtained via XRPD detection.
20.4 mg of the solid crystal form A of the compound of formula (I) was weighed and added into a glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 5.7 mg of maleic acid was added, to obtain a milky white suspension. The milky white suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form D of the compound of formula (III-1) was obtained via XRPD detection.
18.4 mg of the solid crystal form A of the compound of formula (I) was weighed and added into a glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 7.5 mg of gentisic acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form E of the compound of formula (IV-1) was obtained via XRPD detection.
20.8 mg of the solid crystal form A of the compound of formula (I) was weighed and added into a glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 4.9 μL of concentrated hydrochloric acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form F of the compound of formula (V-1) was obtained via XRPD detection.
19.3 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of tetrahydrofuran/water (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 4.9 μL of hydrochloric acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form G of the compound of formula (V-2) was obtained via XRPD detection.
19.2 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and a reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 12.2 μL of sulfuric acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form H of the compound of formula (VI-1) was obtained via XRPD detection.
22.5 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 2.6 μL of phosphoric acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form I of the compound of formula (VII-1) was obtained via XRPD detection.
18.5 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of tetrahydrofuran/water (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 2.6 μL of phosphoric acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form J of the compound of formula (VII-2) was obtained via XRPD detection.
21.3 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 8.5 mg of p-toluenesulfonic acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form K of the compound of formula (VIII-1) was obtained via XRPD detection.
18.6 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of tetrahydrofuran/water (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 8.3 mg of p-toluenesulfonic acid was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form L of the compound of formula (VIII-1) was obtained via XRPD detection.
18.6 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of ethanol/dimethyl sulfoxide (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 9.9 mg of 40% hydrobromic acid aqueous solution was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain the solid. The crystal form M of the compound of formula (IX-1) was obtained via XRPD detection.
18.9 mg of the solid crystal form A of the compound of formula (I) was weighed and added into an HPLC glass vial, 0.5 mL of tetrahydrofuran/water (volume ratio: 19:1) was added, and the reaction solution was subjected to magnetic stirring at room temperature (at about 600 rpm), 9.8 mg of 40% hydrobromic acid aqueous solution was added, to obtain a yellow suspension. The yellow suspension was subjected to magnetic stirring at 50° C. (at about 700 rpm) for four days, and after centrifugation, a resulting solid was subjected to vacuum drying at room temperature for two hours to obtain a solid. The crystal form N of the compound of formula (IX-2) was obtained via XRPD detection.
According to “Guidelines for the Stability Testing of Drug Substances and Preparations” (General Chapter 9001 in the Chinese Pharmacopoeia, Volume IV, 2015 Edition), in order to evaluate solid stability of the crystal form A of the compound of formula (I), the crystal form A was subjected to stability evaluation with respect to influencing factors (high temperature, high humidity and sunlight) and 60° C./75% RH and 40° C./75% RH conditions. The crystal form A was placed under conditions of high temperature (60° C., sealed) and high humidity (92.5% RH, wrapped in parafilm with 5 pierced small holes) for 1 week and 2 weeks, respectively. According to ICH conditions (total illuminance of visible light reached 1200000 lux·hrs, and total ultraviolet light illuminance reached 200 W·hrs/m2), the crystal form A was sealed and placed under visible light and ultraviolet light (a control group sample was placed in the dark at the same time and wrapped in tinfoil) under 60° C./75% RH (wrapped in parafilm pierced with 5 small holes) for 1 and 2 months, and placed under the condition of 40° C./75% RH (wrapped with parafilm with 5 pierced small holes) for 1, 2 and 3 months. All the stability samples were subjected to XRPD detection to detect changes in crystal forms. The results are shown in Table 19.
About 10 mg of the crystal form was accurately weighed, put in a dry and clean glass bottle, spread into a thin layer, covered with aluminum foil with small pierced holes, and put under conditions of the influencing factor test and accelerated conditions. A sample under sunlight conditions (1200000 Lux visible light, and 200 W ultraviolet light) was put in a transparent glass bottle and fully exposed, and a sample used for XRPD detection was put separately.
After the sample was taken out by a time point, the glass bottle was covered with a lid, sealed with parafilm, and stored in a refrigerator at −20° C. During sample preparation, the sample was taken out of the refrigerator and recovered to room temperature, 10 mL of 80% ACN was added, and the sample was dissolved by ultrasonication for 2 minutes to obtain a solution at a concentration of about 1 mg/mL. A liquid phase was used for sample analysis, and the test result was compared with an initial test result on Day 0. The test results are shown in Table 19 below.
Preparation of a standard solution on Day 0: About 10 mg of the crystal form was weighed, put into a 10 mL volumetric flask, dissolved in 80% acetonitrile and diluted to the scale.
In addition, all the stability samples were subjected to the HPLC tests. Specific results are summarized in Table 19.
Conclusion: The crystal form A of the compound of formula (I) experienced no significant change in purity and crystal form under all stability conditions (high temperature, high humidity and sunlight), and had good chemical stability.
Test purpose: to measure an inhibitory IC50 value of the compounds against Syk protein kinase.
Test material: Syk kinase (Invitrogen, PV3857)
Conclusion: The crystal form A of the compound of formula (I) had good inhibitory activity against Syk.
Teat purpose
The KDR Kinase Kit was designed to use Kinase-Glo® MAX as a teat reagent to measure KDR kinase activity, and the IC50 value of the compound was used as an indicator for compound screening and analysis.
ADP-GLO™ Kinase Assay is an assay reaction for measuring adenosine diphosphate formed by the kinase by using a luminescent kinase; and ADP was converted into ATP, that is, conversion into a light signal via Ultra-Glo™ Luciferase. The light signal was positively correlated with the quantity of ADP and kinase activity. Such assay was very suitable for determining the activity of the compound, making the assay ideal for primary screening and a kinase selectivity assay. The ADP-Glo™ Kinase Assay can be used to monitor the activity of almost all ADP-producing enzymes (for example, a kinase or ATPase):
Conclusion: The crystal form A of the compound of formula (I) had good inhibitory activity against KDR (VEGFR-2).
Test purpose: to study pharmacokinetics of the compound in eye tissues of male SD rats after single administration of eye drop
Test material: SD rats (male, 7 to 10 weeks of age, WTLH/SLAC)
Test operation: In this test, 18 male SD rats were provided by Beijing Vital River Laboratory Animal Technology Co., Ltd., and were randomly divided into 6 groups (3 rats/group), and each group of animals were given 0.730 μM (5 mg/mL for both eyes, 30 μL/eye) of OT202 eye drops during single administration. All animals were not fasted before administration. Details about administration and blood sampling of the crystal form A of a compound of formula (I) are shown in Table 22 and Table 23 below, respectively.
Relevant parameters of pharmacokinetics of the crystal form A of the compound of formula (I) in SD rats are shown in Table 24 below.
Conclusion: The crystal form A of the compound of formula (I) had good pharmacokinetic features, including a good eye-to-blood ratio, tissue exposure and so on.
| Number | Date | Country | Kind |
|---|---|---|---|
| 202110151592.7 | Feb 2021 | CN | national |
The present application claims priority to Patent Application No. CN202110151592.7, filed on Feb. 3, 2021, and entitled “SALT FORM AND CRYSTAL FORM OF PYRAZOLE-SUBSTITUTED IMIDAZO[1,2-A]QUINOXALINE DERIVATIVE”, which is incorporated herein by reference in its entirety.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2022/071598 | 1/12/2022 | WO |
