Patent Application
20140272413
The present disclosure is directed to sapphire ribbons and apparatuses and methods for forming sapphire ribbons particularly by Edge-Defined Film-Fed Growth (EFG).
Sapphire crystals are used in a variety of applications. For example, sapphire ribbons can be used for various demanding, high performance commercial applications, such as wafers and screen protectors for mobile phones. Further improvement of sapphire ribbons, in particular production of a plurality of sapphire ribbons grown concurrently with improved dimensional stability variation between the ribbons is desired.
Embodiments are illustrated by way of example and are not limited in the accompanying figures.
Skilled artisans appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of embodiments of the invention.
The following description in combination with the figures is provided to assist in understanding the teachings disclosed herein. The following discussion will focus on specific implementations and embodiments of the teachings. This focus is provided to assist in describing the teachings and should not be interpreted as a limitation on the scope or applicability of the teachings. However, other embodiments can be used based on the teachings as disclosed in this application.
As used herein, the term “C-plane sapphire” refers to substantially planar single crystal sapphire, the C-axis of which is substantially normal (±10 degrees) to the major planar surface of the material. Typically, the C-axis is less than about 1 degree from the major planar surface.
As used herein, the term “A-plane sapphire” refers to substantially planar single crystal sapphire, the A-axis of which is substantially normal (±10 degrees) to the major planar surface of the material. Typically, the A-axis is less than about 1 degree from the major planar surface.
As used herein, the term “R-plane sapphire” refers to substantially planar single crystal sapphire, the R-axis of which is substantially normal (±10 degrees) to the major planar surface of the material. Typically, the R-axis is less than about 1 degree from the major planar surface.
Each of the crystallographic planes in sapphire discussed herein are as is commonly known in the art. It is to be understood that as used herein, mention of a particular orientation of a crystal sheet to a specific plane include all off-angle or mis-angle, miscut, or the like orientations in which the reference plane is tilted to another plane. For example, it is often desirable to product crystal sheets having a general A-plane or C-plane orientation, but include a desired tilt or miscut angle toward the M-plane. Accordingly, use of the phrase “A-plane” or “C-plane” for example, include this plane as the general reference plane with any desired offcut or misangle orientation.
The following table below illustrates the miller indices and d spacing of the common crystallographic planes in sapphire:
As used herein, the phrases “outer ribbons”, “outer die”, “outer sapphire ribbons” , “outer crystal ribbons” and the like include all ribbons except the most inner 4 ribbons if the total number of ribbons being concurrently grown is even or the most inner 5 ribbons if the total number of ribbons being concurrently grown is odd. For example, in an EFG apparatus adapted to concurrently grow 10 or 11 ribbons, the outer ribbons would include the 3 most outer ribbons on each side. Similarly, and as another example, in an EFG apparatus adapted to concurrently grow 6 or 7 ribbons, the outer ribbons would include only the outermost ribbon on each side.
The terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a method, article, or apparatus that comprises a list of features is not necessarily limited only to those features but may include other features not expressly listed or inherent to such method, article, or apparatus. Further, unless expressly stated to the contrary, “or” refers to an inclusive-or and not to an exclusive-or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).
Also, the use of “a” or “an” is employed to describe elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be read to include one, at least one, or the singular as also including the plural, or vice versa, unless it is clear that it is meant otherwise. For example, when a single item is described herein, more than one item may be used in place of a single item. Similarly, where more than one item is described herein, a single item may be substituted for that more than one item.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The materials, methods, and examples are illustrative only and not intended to be limiting. To the extent not described herein, many details regarding specific materials and processing acts are conventional and may be found in textbooks and other sources within the crystal and particularly sapphire crystal arts.
The following disclosure describes apparatuses and methods to form a plurality of sapphire ribbons which have consistent characteristics between each concurrently produced ribbon. For example, it has heretofore been unknown how to form a multitude of sapphire ribbons, and particularly at least six sapphire ribbons, having consistency between the ribbons, and particularly the outer ribbons as described herein. The concepts are better understood in view of the embodiments described below that illustrate and do not limit the scope of the present invention.
In certain embodiments, the heat reflective shield 50 can be disposed adjacent to at least part of both the die tip 22 and the first region 30. The heat reflective shield 50 can include a first surface 52 facing the die and a second surface 54 opposite the first surface 52. The heat reflective shield 50 can be configured to direct (or reflect) heat energy contacting the first surface 52 of the heat reflective shield towards a region of lower temperature, such as in a second region 32, above the first region 30. Reflecting heat radiating from the first region 30 to a region of lower temperature can increase the thermal gradient in the first region 30 above the die relative to an apparatus having a heat shield parallel to the side surface of the die tip. As such, the heat reflective shield 50 can be configured to control a first thermal gradient from reflected heat in both a lateral direction and a vertical direction. This in contrast with a heat shield which is perpendicular to the horizontal plane (or parallel with the side surface of the die tip), which reflects most of its heat in the lateral direction thereby not enabling control of the thermal gradient from reflected heat in a vertical direction. By angling the heat shield with respect to the horizontal plane, a significant amount of the radiated heat can be reflected to an area different from which it originated.
As used herein, “thermal gradient” refers to the average change in temperature of the crystal ribbon over a distance between two locations in an EFG growth apparatus. The distance between the two locations is measured on a line along which the single crystal sapphire advances during the production process. For example, in an EFG technique, the temperature difference may be 50 degrees Celsius between a first position in the apparatus and a second position in the apparatus. Thermal gradient units may be, for example, “degrees per cm” or “degrees per inch.” If not specified, the temperature change is from a higher temperature to a lower temperature as the sapphire crystal passes from the first location to the second through the gradient. In particular embodiments, the first thermal gradient can extend along the forming plane for a distance of at least about 10 mm, at least about 20 mm, at least about 30 mm, at least about 50 mm, or even at least about 100 mm.
Further, a second thermal gradient can be located adjacent to the first thermal gradient. The second thermal gradient can be further away from the die opening than the first thermal gradient. In particular embodiments, the second thermal gradient can be less than the first thermal gradient. For example, as the sapphire ribbon is formed, it can be cooled faster in the first region 30 than the second region 32 such that the second thermal gradient in the second region 32 is less than the first thermal gradient in the first region 30.
Referring again to
Referring now to
Further, each of the plurality of dies can be spaced apart from an adjacent die in a horizontal direction of no greater than 609.6 mm, no greater than 508 mm, no greater than 406.4 mm, no greater than about 304.8 mm, no greater than about 254 mm, no greater than about 203.2 mm, no greater than about 152.4 mm, no greater than about 127 mm, no greater than about 101.6 mm, no greater than about 76.2 mm, no greater than about 50.8 mm, no greater than about 25.4 mm, no greater than about 19.05 mm, no greater than about 12.7 mm, or even no greater than about 6.35 mm. The spacing is measure from the center of one die tip to the center of an adjacent die tip.
Referring again to
In certain embodiments, the heat reflective shield 50 can have an angle a with the horizontal plane of no less than about 1 degree, no less than about 2 degrees, no less than about 3 degrees, no less than about 4 degrees, no less than about 5 degrees, no less than about 10 degrees, no less than about 15 degrees, no less than about 20 degrees, no less than about 25 degrees, no less than about 30 degrees, no less than about 35 degrees, no less than about 40 degrees, no less than about 45 degrees, no less than about 50 degrees, no less than about 55 degrees, no less than about 60 degrees, no less than about 65 degrees, no less than about 70 degrees, no less than about 75 degrees, no less than about 80 degrees, or even no less than about 85 degrees. In further embodiments, the heat reflective shield can have an angle a of no greater than about 88 degrees, no greater than about 85 degrees, no greater than about 80 degrees, no greater than about 75 degrees, or even no greater than about 70 degrees with horizontal plane. In still further embodiments, the heat reflective shield can have an angle a in a range of any of the maximum and minimum values described herein.
The heat reflective shield 50 can be constructed from any material that can manipulate the flow of heat radiation within the EFG apparatus. In certain embodiments, the heat reflective shield 50 can be constructed from a metal, such as for example, a refractory metal.
In certain embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a width of at least about 101.6 mm, at least about 152.4 mm, at least about 203.2 mm, or even at least about 304.8 mm. In further embodiments, a sapphire ribbon described herein, and even each concurrently produced sapphire ribbon can have a width of no greater than about 2540 mm, no greater than about 1219.2 mm, no greater than about 914.4 mm, no greater than about 762 mm, no greater than about 609.6 mm, or even no greater than about 457.2 mm. In still further embodiments, a sapphire ribbon described herein, and even each concurrently produced sapphire ribbon can have a width in a range of any of the maximum and minimum values described herein.
In further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a length of at least about 152.4 mm, at least about 304.8 mm, at least about 609.6 mm, at least about 762 mm, at least about 914.4 mm, at least about 1066.8 mm, or even at least about 1219.2 mm. In further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbon can have a length of no greater than about 5080 mm, no greater than about 3810 mm, or even no greater than about 2540 mm. In even further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a length in a range of any of the maximum and minimum values described herein.
In still further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have an average thickness of at least about 0.1 mm, at least about 0.5 mm, at least about 0.8 mm, at least about 1 mm, at least about 1.3 mm, at least about 1.5 mm, at least about 1.7 mm, at least about 2.0 mm, or even at least about 2.3 mm. In further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have an average thickness of no greater than about 100 mm, no greater than about 75 mm, no greater than about 50 mm, no greater than about 35 mm, no greater than about 25 mm, no greater than about 15 mm, no greater than about 10 mm, or even no greater than about 5 mm. Further, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have an average thickness within a range between any of the maximum and minimum values described herein. As used herein, “average thickness” refers to the mean average thickness of all thickness measured in a thickness map having measurements taken every square inch in the full width section. In particular, measurements of the thickness and generation of the thickness map can be conducted through ultrasonic measurements as is standard in the art.
Further, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a total thickness variation (TTV) of no greater than 2 mm, no greater than 1.8 mm, no greater than 1.6 mm, no greater than 1.4 mm, no greater than 1.2 mm, no greater than 1.0 mm, no greater than 0.8 mm, no greater than 0.7 mm, no greater than 0.6 mm, no greater than about 0.5 mm, no greater than about 0.4 mm, or even no greater than about 0.3mm. Total thickness variation is measured by subtraction of the minimum thickness of a ribbon from the maximum thickness of a ribbon. As used herein, both the minimum thickness of a ribbon and the maximum thickness can be determined by ultrasonic measurement at an interval of 1 measurement per square inch. In particular embodiments, the TTV can be as described above, and if any voids are present, the thickness measurements in and about the void are not included in the determination of the TTV. In other words, the minimum thickness, for the purposes of a TTV calculation, can be the minimum, non-zero thickness. In such embodiments, any zero measurements determined in the thickness maps are not used as the minimum thickness for the purposes of a TTV calculation.
Moreover, a particular advantage of the present disclosure is the ability to concurrently form a plurality of sapphire, with the outer ribbons, at least six ribbons, or even all of the plurality of concurrently produced sapphire ribbons have the total thickness variation (TTV) described above. Such a characteristic can be quantified by the variability of total thickness variation between each of the plurality of concurrently formed sapphire ribbons. The variability of total thickness variation can be determined by the following formula:
VTTV=((TTVi−TTVAVG)/(TTVAVG))*100%
wherein VTTV represents the variability of total thickness variation; TTVi represents the total thickness variation of the sapphire ribbon of interest and TTVAVG represents the mean average of the total thickness variation of all concurrently produced sapphire ribbons in a batch. Again, each total thickness variation measurement is determined by subtracting the minimum thickness value from the maximum thickness value within a ribbon. In particular embodiments, the variability of total thickness variation can be no greater than about ±50%, no greater than ±40%, no greater than ±30%, no greater than ±15%, no greater than about ±10%, no greater than about ±7%, no greater than about ±5%, no greater than bout ±3%, or even no greater than about ±2%.
In still further embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a maximum low spot thickness (or minimum thickness) of at least about 2.0 mm, at least about 1.8 mm, at least about 1.6 mm, at least about 1.4 mm, at least about 1.2 mm, at least about 1.0 mm, at least about 0.8 mm, at least about 0.7 mm, at least about 0.6 mm, or even at least about 0.5 mm. In particular embodiments, a sapphire ribbon described herein, and even at least six or still even all of the concurrently produced sapphire ribbons can have a maximum low spot thickness of at least about 1.0 mm, and in even more particular embodiments, at least about 0.5 mm. The maximum low spot thickness is a measurement of the lowest thickness on the entire sapphire ribbon in the measurement zone. The maximum low spot thicknesses are measured by standard techniques for thickness, such as calipers, drop gauges, micrometers, or ultrasound. Moreover, another particular advantage of the present disclosure is the ability to concurrently form a plurality of sapphire ribbons, with the outer ribbons and even all of the plurality of sapphire ribbons having the maximum low spot thickness described above. A maximum low spot thickness of 0 would indicate a void present in the ribbon.
In still further embodiments, a sapphire ribbon described herein, and even each concurrently produced sapphire ribbon can have a standard deviation from planar of no greater than 2 mm, no greater than 1.8 mm, no greater than 1.6 mm, no greater than 1.4 mm, no greater than 1.2 mm, no greater than 1.0 mm, no greater than 0.8 mm, no greater than 0.7 mm, no greater than 0.6 mm, no greater than about 0.5 mm, no greater than about 0.4 mm, or even no greater than about 0.3 mm. The standard deviation from planar is a measurement of the variance from a planar orientation in the sapphire ribbon. The standard deviation from planar can be measured by standard techniques for thickness, such as calipers, drop gauges, micrometers, or ultrasound. Moreover, another particular advantage of the present disclosure is the ability to concurrently form a plurality of sapphire ribbons, with the outer ribbons and even all of the plurality of sapphire ribbons having the standard deviation from planar described above.
A particular advantage of the present disclosure is the ability to concurrently form a plurality of sapphire ribbons, where each of the plurality of sapphire ribbons, and particularly the outer ribbons are essentially free of voids. As used herein, “voids” refers to a defect in a single crystal ribbon in which there is a gap or aperture within the ribbon. Further, as used herein, “essentially free of voids” refers to a single crystal ribbon in which there is no discontinuation of sapphire across the width of the crystal, that is the crystal has a thickness greater than 0. It has heretofore been unknown how to concurrently form a plurality of sapphire ribbons, where each of the sapphire ribbons is essentially free of voids. For example, as will be described in more detail below in the EXAMPLE section, adding dies to a traditional EFG apparatus produced crystal ribbons on the outer dies with substantial voiding and inconsistent dimensional stability. Without wishing to be limited by theory, it is believed that in a traditional EFG growth apparatus, the temperature and the thermal gradient on the outer ribbons is different than the inner ribbons. It is believed that the inconsistent thermal gradient between ribbons may cause defects such as voiding and variation in total thickness variation, particularly in the outer ribbons. Accordingly, in certain embodiments described herein, each concurrently formed sapphire ribbon can be essentially free of voids, and in particular embodiments, the outer ribbons, at least six ribbons, or even all of the concurrently produced ribbons can be essentially free of voids.
According to another embodiment of the present disclosure, a method of concurrently forming a plurality of sapphire ribbons can include providing an EFG apparatus having a plurality of dies; crystallizing the plurality of ribbons, particularly sapphire ribbons above each of the plurality of dies; and cooling the plurality of sapphire ribbons. Cooling the plurality of sapphire ribbons can include controlling a first thermal gradient in a first region adjacent the die and controlling a second thermal gradient in a second region adjacent the first region and further away from the die than the first region. The second thermal gradient can be lower than the first thermal gradient such that the ribbons are cooled faster in the first region than in the second region. The thermal gradients in the first or second region can be partially controlled with a heat reflective shield. In certain embodiments, the heat reflecting shield can be angled with respect to the horizontal plane as described above.
A particular advantage of the present disclosure is the ability to control the first and second thermal gradients (most importantly the first thermal gradient) such that the thermal gradients are consistent or have a low variability between the plurality of sapphire ribbons. For example, in a traditional EFG growth apparatus, it has not been possible to control the first thermal gradient such that each of the first thermal gradients in each of the concurrently formed sapphire ribbons are greater than about 1.5° C./cm, greater than about 2° C./cm, greater than about 3° C./cm, greater than about 5° C./cm, 10° C./cm, greater than about 20° C./cm, greater than about 50° C./cm, greater than about 100° C./cm, greater than about 200° C./cm, greater than about 500° C./cm or even greater than about 1000° C./cm.
In particular embodiments, the sapphire ribbons can have a dwell time of at least about 10 minutes in the first region. As used herein, “dwell time” refers to the length of time a point on the ribbon spends within a region of the EFG apparatus. As discussed above, the first region is between the die opening and the second region.
In an EFG apparatus, the plurality of ribbons are “pulled” from the melt and crystallized above the die to form the ribbons. The rate at which the ribbons are pulled from the melt is referred to the draw rate. In certain embodiments, the draw rate of each of the plurality of ribbons can be the same or at least one can be different. In particular embodiments, the sapphire ribbons can be drawn at a rate of 0.5 cm/hr, 1.0 cm/hr, 1.5 cm/hr, 2.0 cm/hr, 2.5 cm/hr, at least 5 cm/hr, or even at least 10 cm/hr.
As used herein, “spread” or “spreading” refers to the forming of the width dimension of the crystal ribbon during crystallization and cooling. Without wishing to be bound by theory, it is believed controlling the thermal gradients can, in part, control the spreading of the crystal ribbon. A particular advantage of the present disclosure is the ability to achieve a consistent spread width between each of the plurality of sapphire ribbons produced in a batch.
Further in certain embodiments, the method can include controlling the spread length of the plurality of crystal ribbons such that the plurality of crystal ribbons have a maximum spread length variability of no greater than about 25%, no greater than about 20%, no greater than about 18%, no greater than about 15%, no greater than about 10%, or even no greater than about 5%. As used herein, “spread length” refers to the distance between the seed and the full width section. Maximum spread length variability is determined by the following equation:
SLVMAX=((SLMAX−SLMIN)/((SLMAX+SLMIN)/2))*100%
wherein SLVMAX refers to the maximum spread length variability; SLMAX refers to the maximum spread length of one of the plurality of sapphire ribbons produced in a batch; and SLMIN refers to the minimum spread length of one of the plurality of sapphire ribbons produced in a batch. A particular advantage of the present disclosure is the ability to achieve a consistent spread length between the plurality of sapphire ribbons produced in a batch.
According to certain embodiments, the plurality of sapphire ribbons produced by the methods described herein can have the characteristics described herein such as the total thickness variation, variability of total thickness variation, maximum low spot thickness, standard deviation from planarity, etc. A particular advantage of the present disclosure is the ability to concurrently form a plurality of sapphire ribbons, with each of the sapphire ribbons have the characteristics described herein. In particular, the method described herein can be used to concurrently form at least 3, at least 4, at least 5, at least 6, at least 7, at least 8, at least 9, at least 10, at least 11, at least 12, at least 13, at least 14, at least 15, or even at least 16 sapphire ribbons, where each of the ribbons has the characteristics described herein. Further, in certain embodiments, the method described herein can be used to concurrently for no more than 50, no more than 25, or even no more than 20 sapphire ribbons in the same growth apparatus.
In fact, it has never before been possible to concurrently produce 6 or more sapphire sheets in the same growth apparatus with each of concurrently produced ribbons having the dimensional stability described herein. Accordingly, certain embodiments described herein are directed to producing 6 or more ribbons, wherein at least 6 of the 6 or more ribbons have the characteristics described herein, such as total thickness variation and variability of total thickness variation.
Furthermore, embodiments of the present disclosure are further directed to a batch of sapphire ribbons. As used herein, a “batch” refers to a plurality of sapphire ribbons concurrently (simultaneously) formed in the same growth apparatus. For example, a batch can include at least 3, at least 4, at least 5, at least 6, at least 7, at least 8, at least 9, at least 10, at least 11, at least 12, at least 13, at least 14, at least 15, or even at least 16 sapphire ribbons that are concurrently formed in the same growth apparatus. Further, in certain embodiments, a batch can include no more than 50, no more than 25, or even no more than 20 sapphire ribbons that are currently formed in the same growth apparatus.
In particular embodiments, each of the sapphire ribbons in the batch can have the characteristics described herein such as total thickness variation, variability of total thickness variation, maximum low spot thickness, standard deviation from planarity, be essentially free of voids, etc. A particular advantage of the present disclosure is the ability to form a batch of sapphire ribbons, with each of the sapphire ribbons in the batch having the characteristics described herein.
The sapphire ribbons described herein can be further processed to form a multitude of various products. In particular embodiments, the sapphire ribbons can be cut to form wafers, and particularly a batch of wafers. As used herein a “batch of wafers” refers to wafers formed from a plurality of concurrently formed sapphire ribbons. Moreover, in still further embodiments, a light emitting device can be formed from the wafer, or a plurality of light emitting devices can be formed from the batch of wafers.
In even further embodiments, a protector screen for mobile devices can be formed from the sapphire ribbon described herein. The formation of the protector screen can be performed according to any method known in the art.
In even further embodiments, a transparent window that transmits in the visible spectra may be formed from the sapphire ribbon described herein.
The EFG apparatus, and the sapphire ribbons produced therefrom can have any desired crystal orientation. In certain embodiments, the sapphire ribbons can have a C-axis, an A-axis, an R-axis, a M-axis, a N-axis, or an S-axis orientation substantially perpendicular to the sapphire ribbon's major surface. In certain particular embodiments, the sapphire ribbons can have a C-axis, an A-axis, or an R-axis orientation substantially perpendicular to the sapphire ribbon's major surface. In particular embodiments, the sapphire ribbons have a C-axis orientation substantially perpendicular to the sapphire ribbon's major surface. In other particular embodiments, the sapphire ribbons have an A-axis orientation substantially perpendicular to the sapphire ribbon's major surface. The crystal orientation can be determined by seeding a melt fixture with a seed having known, desired orientation substantially perpendicular to a longitudinal axis of a die opening. The thus formed ribbon will then have a corresponding orientation substantially perpendicular to the sapphire ribbon's major surface.
Three batches of C-plane sapphire ribbons and one batch of A-plane ribbons were produced. The first batch (Batch A; C-plane) was produced using an EFG growth apparatus depicted in
For each of the batches, the crucible and die is heated until the top of the die is greater than 2100 degrees C. Alumina pellets are loaded into the crucible through a tube that extends outside of the furnace and is protected by an inert atmosphere, such as argon. Once the melt level is higher than about half of the die height, a seed having a C-axis (or A-axis for A-plane) orientation perpendicular to the growth direction is lowered to the die tips. The temperature of the die is lowered, and the seed is pulled vertically away from the die at a rate of 27.94 mm/hr. The temperature is controlled as function of the mass. Once the crystal is at full width, and the temperature remains constant until the desired length has been achieved.
Various characteristics of each of the sapphire ribbons in the batches were measured and the following results were obtained:
Each of the thickness measurements and values discussed in Table 1 above are determined from a generated thickness map. To produce the thickness map, the thickness of the ribbon is measured every square inch and mapped on an image of the ribbon as described in more detail above and understood by one of ordinary skill in the art. The table above indicates that Batch C resulted in the best results with the most consistency in the dimensional control between the C-plane sapphire ribbons. Batch D indicates that A-plane ribbons also benefit from the changes incorporated in the die for Batch C, as results similar to Batch A would be obtained for A-plane ribbons using the Batch A die configuration.
Pictures of each of the C-plane sapphire ribbons were taken on graph paper to show dimensions of the ribbons and thickness maps of each of the ribbons were produced.
The same apparatus and method provided for Batches C and D above were used in an EFG growth apparatus with 16 dies. Similar results to that achieved with Batches C and D were present in the sapphire sheets, and particularly the outer sapphire sheets, when growing 16 concurrent sapphire sheets.
Many different aspects and embodiments are possible. Some of those aspects and embodiments are described below. After reading this specification, skilled artisans will appreciate that those aspects and embodiments are only illustrative and do not limit the scope of the present invention. Embodiments may be in accordance with any one or more of the items as listed below.
Item 1. An apparatus for forming a sapphire ribbon via Edge-Defined Film-Fed Growth (EFG), the apparatus comprising a heat reflective shield angled with respect to a horizontal plane, wherein the heat reflective shield is configured to control a thermal gradient from reflected heat in a lateral direction and a vertical direction.
Item 2. An apparatus for concurrently forming at least six sapphire ribbons, wherein at least six of the at least six sapphire ribbons are essentially free of voids.
Item 3. An apparatus for concurrently forming at least six sapphire ribbons, wherein at least six of the at least six sapphire ribbons have an average width of at least 101.6 mm.
Item 4. An apparatus for forming a sapphire ribbon, the apparatus comprising:
Item 5. An apparatus for concurrently forming at least six ribbons comprising sapphire, the apparatus comprising:
Item 6. A method of concurrently forming at least six ribbons comprising sapphire, the method comprising:
Item 7. A method of concurrently forming at least six ribbons comprising sapphire, the method comprising:
Item 8. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 10%.
Item 9. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons in the batch are essentially free of voids.
Item 10. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons in the batch have a maximum spread length variability of no greater than about 20%.
Item 11. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons in the batch have an average width of at least 101.6 mm.
Item 12. A sapphire ribbon grown from an outer die in an EFG growth apparatus configured to simultaneously produce at least six sapphire ribbons, wherein the sapphire ribbon grown from the outer die have a thickness variation within 10% of the average thickness of each of the sapphire ribbons produced simultaneously with the sapphire ribbons grown from the outer dies.
Item 13. A crystal ribbon grown from an outer die in an EFG growth apparatus configured to simultaneously produce at least eight crystal ribbons, wherein the crystal ribbon is essentially free of voids.
Item 14. A wafer cut from an outer sapphire crystal ribbon grown concurrently with at least 6 sapphire crystal ribbons.
Item 15. A light-emitting device made from the sapphire wafer of item 14.
Item 16. A sapphire protector screen for mobile devices formed from an outer crystal ribbon grown concurrently with at least 6 crystal ribbons.
Item 17. The apparatus, method, batch or ribbon of any one of the preceding items, wherein the crystal ribbons have an average width of at least about 101.6 mm, at least about 152.4 mm, at least about 203.2 mm, or even at least about 0.304.8 mm.
Item 18. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein the crystal ribbons have an average length of at least about 152.4 mm, at least about 304.8 mm, at least about 609.6 mm, or even at least about 762 mm.
Item 19. The apparatus or method of any one of the preceding items, wherein the heat reflective shield is angled with respect to a forming plane.
Item 20. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein the one or more sapphire ribbons have an average thickness of at least about 0.1 mm, at least about 0.5 mm, at least about 0.8 mm, at least about 1 mm, at least about 1.3 mm, at least about 1.5 mm, at least about 1.7 mm, at least about 2.0 mm, or even at least about 2.3 mm.
Item 21. The apparatus, method, ribbon, or batch of any one of the preceding items wherein the one or more sapphire ribbons have an average thickness of no greater than about 100 mm, no greater than about 75 mm, no greater than about 50 mm, no greater than about 35 mm, no greater than about 25 mm, no greater than about 15 mm, no greater than about 10 mm, or even no greater than about 5 mm.
Item 22. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein each sapphire ribbon has a Total Thickness Variation of no greater than 2 mm, no greater than 1.8 mm, no greater than 1.6 mm, no greater than 1.4 mm, no greater than 1.2 mm, no greater than 1.0 mm, no greater than 0.8 mm, no greater than 0.7 mm, no greater than 0.6 mm, no greater than about 0.5 mm, no greater than about 0.4 mm, or even no greater than about 0.3 mm
Item 23. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein each sapphire ribbon has a Total Thickness Variation of no greater than 2 mm, no greater than 1.8 mm, no greater than 1.6 mm, no greater than 1.4 mm, no greater than 1.2 mm, no greater than 1.0 mm, no greater than 0.8 mm, no greater than 0.7 mm, no greater than 0.6 mm, no greater than about 0.5 mm, no greater than about 0.4 mm, or even no greater than about 0.3 mm, and wherein the TTV is determined without including any voids.
Item 24. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein the variability of total thickness variation between the total number of concurrently formed ribbons can be no greater than about ±50%, no greater than ±40%, no greater than ±30%, no greater than ±15%, no greater than about ±10%, no greater than about ±7%, no greater than about ±5%, no greater than bout ±3%, or even no greater than about ±2%.
Item 25. The apparatus, method, ribbon, or batch of any one of the preceding items, wherein each sapphire ribbon has a maximum low spot thickness of at least about 2.0 mm, at least about 1.8 mm, at least about 1.6 mm, at least about 1.4 mm, at least about 1.2 mm, at least about 1.0 mm, at least about 0.8 mm, at least about 0.7 mm, at least about 0.6 mm, or even at least about 0.5 mm.
Item 26. The apparatus or method of any one of the preceding items, wherein the heat reflective shield forms an angle with a forming plane of no greater than about 85 degrees, no greater than about 80 degrees, no greater than about 75 degrees, or even no greater than about 70 degrees.
Item 27. The apparatus or method of any one of the preceding items, wherein the heat reflective shield forms an angle of no less than about 1 degrees, no less than about 2 degrees, no less than about 3 degrees, no less than about 4 degrees, no less than about 5 degrees, no less than about 10 degrees, no less than about 15 degrees, no less than about 20 degrees, no less than about 25 degrees, no less than about 30 degrees, no less than about 35 degrees, no less than about 40 degrees, no less than about 45 degree, no less than about 50 degrees, no less than about 55 degrees, or even no less than about 60 degrees.
Item 28. The apparatus or method of any one of the preceding items, wherein the heat reflective shield comprises a metal, in particular a refractory metal.
Item 29. The apparatus or method of any one of the preceding items, wherein the heat reflective shield is positioned such that a significant portion of heat radiating laterally from the first region is reflected toward an area of lower temperature.
Item 30. The apparatus or method of any one of the preceding items, wherein the heat reflective shield is disposed adjacent to the first region.
Item 31. The apparatus or method of any one of the preceding items, wherein the first thermal gradient extends along the forming plane for a distance of at least about 1 cm, at least about 2 cm, at least about 3 cm, at least about 5 cm, or even at least about 10 cm.
Item 32. The apparatus or method of any one of the preceding items, further comprising a second thermal gradient adjacent to the first thermal gradient, wherein the second thermal gradient is further away from the die opening than the first thermal gradient, and wherein the second thermal gradient is less than the first thermal gradient.
Item 33. The apparatus or method of any one of the preceding items, wherein the die opening has a width of at least 25.4 mm, at least 50.8 mm, at least 76.2 mm, at least 101.6 mm, at least 152.4 mm, or even at least 203.2 mm.
Item 34. The apparatus or method of any one of the preceding items, wherein the die opening has a thickness of at least 0.3 mm, at least 0.6 mm, at least 0.75 mm, at least about 1 mm, at least about 1.5 mm, at least about 2 mm, at least about 2.5 mm, at least about 2.8 mm, at least about 3 mm, or even at least about 3.5 mm.
Item 35. The apparatus or method of any one of the preceding items, wherein a ratio of the average thickness of the sapphire ribbon to the thickness of the die opening is at least about 0.95:1.
Item 36. The method of any one of the preceding items, wherein the dwell time of a specific point on the sapphire ribbon in the first region is at least 10 minutes.
Item 37. The method of any one of the preceding items, further comprising drawing the sapphire ribbon at a rate of at least 0.5 cm/hr, at least 1.0 cm/hr, at least 1.5 cm/hr, at least 2.5 cm/hr, at least 5 cm/hr, or even at least 10 cm/hr.
Item 38. The apparatus or method of any one of the preceding items, wherein the outer die openings are disposed higher than at least one die opening between the outer die openings.
Item 39. The apparatus or method of any one of the preceding items, wherein at least one die openings is disposed at a different height than the other die openings.
Item 40. The apparatus, method, batch, or ribbon of any one of the preceding items, wherein the one or more sapphire ribbons have a C-axis, an A-axis, M-axis or an R-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
Item 41. The apparatus, method, batch, or ribbon of any one of the preceding items, wherein the one or more sapphire ribbons have a C-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
Item 42. The method of any one of the preceding items, further comprising seeding a melt fixture with a seed having an A-axis, a C-axis, M-axis or a R-axis orientation substantially perpendicular to a longitudinal axis of a die opening; and wherein the sapphire ribbon has a corresponding A-axis, C-axis, M-axis or R-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
Item 43. The method of any one of the preceding items, further comprising seeding one or more melt fixtures with a seed having a C-axis orientation substantially perpendicular to a longitudinal axis of a die opening; and wherein the one or more sapphire ribbons have a corresponding C-axis orientation substantially perpendicular to the one or more sapphire ribbon's major surface.
Item 44. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 10%.
Item 45. A batch of at least six concurrently EFG grown sapphire ribbons, wherein at least six of the sapphire ribbons in the batch are essentially free of voids.
Item 46. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have an average width of at least about 101.6 mm.
Item 47. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have an average length of at least about 152.4 mm.
Item 48. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have an average thickness in a range of from about 0.1 mm to about 100 mm.
Item 49. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 2 mm.
Item 50. The batch of any one of the preceding items, wherein two sapphire ribbons grown from outer dies in the batch have a Total Thickness Variation (TTV) of no greater than 1.2 mm.
Item 51. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 2 mm, and wherein the TTV is determined without including any voids.
Item 52. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have a Total Thickness Variation (TTV) of no greater than 1.2 mm, and wherein the TTV is determined without including any voids.
Item 53. The batch of any one of the preceding items, wherein the variability of total thickness variation between the total number of concurrently formed ribbons is no greater than about ±50%.
Item 54. The batch of any one of the preceding items, wherein the variability of total thickness variation between the total number of concurrently formed ribbons is no greater than about ±10%.
Item 55. The batch of any one of the preceding items, wherein each of the at least six of the at least six EFG grown sapphire ribbons have a total thickness variation of no greater than 5%.
Item 56. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have a maximum low spot thickness of at least about 1 mm.
Item 57. The batch of any one of the preceding items, wherein at least six of the sapphire ribbons in the batch have a maximum low spot thickness of at least about 0.5 mm.
Item 58. The batch of any one of the preceding items, wherein the one or more sapphire ribbons in the batch have a C-axis, an A-axis, M-axis or an R-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
Item 59. The batch of any one of the preceding items, wherein the one or more sapphire ribbons have an A-axis orientation substantially perpendicular to the sapphire ribbon's major surface.
Item 60. The batch of any one of the preceding items, wherein the batch comprises at least 8 sapphire ribbons.
Item 61. The batch of any one of the preceding items, wherein the batch comprises at least 10 sapphire ribbons.
Item 62. A sapphire ribbon grown from an outer die in an EFG growth apparatus configured to simultaneously produce at least six sapphire ribbons, wherein the sapphire ribbon grown from the outer die has a thickness variation within 10% of the average thickness of each inner sapphire ribbon produced simultaneously with the sapphire ribbon grown from the outer die.
Item 63. The sapphire ribbon of item 62, wherein the sapphire ribbon grown from an outer die is essentially free of voids.
Note that not all of the activities described above in the general description or the examples are required, that a portion of a specific activity may not be required, and that one or more further activities may be performed in addition to those described. Still further, the order in which activities are listed is not necessarily the order in which they are performed.
Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any feature(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature of any or all the claims.
The specification and illustrations of the embodiments described herein are intended to provide a general understanding of the structure of the various embodiments. The specification and illustrations are not intended to serve as an exhaustive and comprehensive description of all of the elements and features of apparatus and systems that use the structures or methods described herein. Separate embodiments may also be provided in combination in a single embodiment, and conversely, various features that are, for brevity, described in the context of a single embodiment, may also be provided separately or in any subcombination. Further, reference to values stated in ranges includes each and every value within that range. Many other embodiments may be apparent to skilled artisans only after reading this specification. Other embodiments may be used and derived from the disclosure, such that a structural substitution, logical substitution, or another change may be made without departing from the scope of the disclosure. Accordingly, the disclosure is to be regarded as illustrative rather than restrictive.
| Number | Date | Country | |
|---|---|---|---|
| 61791364 | Mar 2013 | US | |
| 61857988 | Jul 2013 | US |
