Present techniques of examining recrystallized silicon, including SOI material, include a wet (acid) etch and examination with an optical microscope, X-ray diffraction, SEM or TEM microscopes. These techniques are slow, and usually the sample is destroyed. The PI propose investigating angle-resolved light scatter techniques as a technique to examine recrystallized silicon as well as other microelectronics materials. The technique would be nonperturbing, could be applied in situ, would be fast, and could be adapted for automation.