SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

Information

• NSF Award
• 0740546

Owner

• NITEK, INC

• Award Id

  0740546

• Award Effective Date

  1/1/2008 - 17 years ago

• Award Expiration Date

  6/30/2008 - 16 years ago

• Award Amount

  $ 99,870.00

• Award Instrument

  Standard Grant

This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth.<br/><br/>Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.

• Program Officer

  William Haines

• Min Amd Letter Date

  11/6/2007 - 17 years ago

• Max Amd Letter Date

  11/6/2007 - 17 years ago

• ARRA Amount

• Name

  Nitek Incorporated

• City

  Irmo

• State

  SC

• Country

  United States

• Address

  1804 Salem Church Rd

• Postal Code

  290639125

• Phone Number

  8037608691

• First Name

  Vinod

• Last Name

  Adivarahan

• Email Address

  adivarah@engr.sc.edu

• Start Date

  11/6/2007 12:00:00 AM

• Name

  Industrial Technology

• Code

  308000