SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

Information

  • NSF Award
  • 0839492
Owner
  • Award Id
    0839492
  • Award Effective Date
    1/1/2009 - 15 years ago
  • Award Expiration Date
    12/31/2009 - 14 years ago
  • Award Amount
    $ 137,331.00
  • Award Instrument
    Standard Grant

SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

This Small Business Innovation Research Project will develop next generation high power deep ultraviolet light emitting diodes with high quality p-type AlInGaN layers with digital doping control. Advancements in AlInGaN material system and device technology have resulted in commercially viable UV light emitting diodes (LEDs) operating in the spectral region from 240 nm to 365 nm.<br/><br/>This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.

  • Program Officer
    William Haines
  • Min Amd Letter Date
    11/3/2008 - 15 years ago
  • Max Amd Letter Date
    7/7/2009 - 14 years ago
  • ARRA Amount

Institutions

  • Name
    Sensor Electronic Technology, Inc.
  • City
    Columbia
  • State
    SC
  • Country
    United States
  • Address
    1195 Atlas Rd
  • Postal Code
    292092531
  • Phone Number
    8036479757

Investigators

  • First Name
    Max
  • Last Name
    Shatalov
  • Email Address
    shatalov@s-et.com
  • Start Date
    11/3/2008 12:00:00 AM

FOA Information

  • Name
    Industrial Technology
  • Code
    308000