SBIR Phase I: Development of a Hypervelocity Neutral Beam Tool for Selective, Damage-Free and Anisotropic Etching of Silicon Dioxide

Information

• NSF Award
• 9761497

Owner

• PHYSICAL SCIENCES, INC

• Award Id

  9761497

• Award Effective Date

  1/1/1998 - 27 years ago

• Award Expiration Date

  8/31/1998 - 26 years ago

• Award Amount

  $ 99,928.00

• Award Instrument

  Standard Grant

Physical Sciences Inc. will demonstrate a selective anisotropic etching tool for silicon dioxide, using a hypothermal Flourine atom beam based upon its patented Fast Atom Sampler Test (FAST) technology. The energy range of the FAST source enables highly efficient, damage-free etching of SiO2. The anisotropic, low damage capability targeted is very relevant to the Semiconductor Industry Association roadmap, which defines neutral stream processing as a critical technology for etching sub 0.2 ªm features in silicon dioxide in the fabrication of ULSI devices.

• Program Officer

  Michael F. Crowley

• Min Amd Letter Date

  11/13/1997 - 27 years ago

• Max Amd Letter Date

  8/17/1998 - 26 years ago

• ARRA Amount

• Name

  Physical Sciences Incorporated (PSI)

• City

  ANDOVER

• State

  MA

• Country

  United States

• Address

  20 NEW ENGLAND BUS CTR DR

• Postal Code

  018101077

• Phone Number

  5086890003

• First Name

  David

• Last Name

  Oakes

• Email Address

  oakes@psicorp.com

• Start Date

  11/13/1997 12:00:00 AM