NSF Award
0320345
This Small Business Innovation Research (SBIR) Phase I project will develop a native oxide confined heterostructure bipolar transistor. Oxidation of AlGaAs has been successfully applied to a number of photonic and electronic devices since its discovery in 1990. In particular, it is a critical technology for current confinement in vertical-cavity surface-emitting lasers. This program will design and develop native oxidation for application to AlGaAs heterostructure bipolar transistors in order to increase the breakdown voltage-frequency product, improve the reliability and efficiency of these devices. A study of the oxidation properties of AlGaAs as it applies to heterostructure bipolar transistors will be performed. Prototype AlGaAs heterostructure bipolar transistors will be fabricated and delivered in Phase I. In Phase II the technology will be extended to more complex device designs, including double heterostructure bipolar transistors.<br/><br/>Commercially the project will address the need for improved performance in AlGaAs heterostructure bipolar transistors for power amplifier applications. AlGaAs heterostructure bipolar transistors with increased breakdown-voltage-frequency products would benefit current markets for wireless communications.
