SBIR Phase I: Novel Microcrystalline Silicon Solar Cell Devices Prepared Using Unique Microwave/Electron Beam (EM) Gas Jet Deposition Technique

Information

  • NSF Award
  • 9760805
Owner
  • Award Id
    9760805
  • Award Effective Date
    1/1/1998 - 27 years ago
  • Award Expiration Date
    6/30/1998 - 26 years ago
  • Award Amount
    $ 100,000.00
  • Award Instrument
    Standard Grant

SBIR Phase I: Novel Microcrystalline Silicon Solar Cell Devices Prepared Using Unique Microwave/Electron Beam (EM) Gas Jet Deposition Technique

*** 9760805 Jones This Small Business Innovation Research Phase I project will test the feasibility of using a novel Microwave/Electron Beam (EM) Gas Jet technique to prepare high stable efficiency microcrystalline silicon cells at high deposition rates. These cells, with light absorbing microcrystalline layers, have been proposed as an alternative to amorphous silicon based cells because, in contrast to the amorphous cells, the efficiencies do not degrade with long term light exposure. While microcrystalline cells with 11% stable efficiencies have been obtained, the technique used to prepare these cells requires unacceptably low deposition rates of 1-3 A/s for microcrystalline formation. The proposed technique is unique in that it utilizes a microwave source, an electron beam and a Gas Jet that produces near supersonic gas speeds. The microwaves efficiently decompose the silane gas to create high deposition rates and with large amounts of hydrogen dilution generate large atomic hydrogen fluxes that are important for microcrystalline formation. The electron beam is required to stabilize the plasma while high gas speeds created by the Gas Jet minimize any detrimental gas phase interactions. The proposer will demonstrate in this program that high quality microcrystalline silicon materials and solar cells can be prepared at high rates with this novel deposition technique. The success of this program will ultimately lead to a wider use of Photovoltaic (PV) products thereby reducing the dependency on fossil fuel energy sources. Development of a high deposition rate technique to prepare high quality microcrystalline silicon could also be applied in other industries such as thin film transistors, photodetectors, and photosensors. ***

  • Program Officer
    Darryl G. Gorman
  • Min Amd Letter Date
    12/5/1997 - 27 years ago
  • Max Amd Letter Date
    12/5/1997 - 27 years ago
  • ARRA Amount

Institutions

  • Name
    Energy Conversion Devices, Inc. (ECD, Inc.)
  • City
    Troy
  • State
    MI
  • Country
    United States
  • Address
    1675 West Maple Road
  • Postal Code
    480847197
  • Phone Number
    2482801900

Investigators

  • First Name
    Scott
  • Last Name
    Jones
  • Email Address
    sjones@ovonic.com
  • Start Date
    12/5/1997 12:00:00 AM

FOA Information

  • Name
    Materials Research
  • Code
    106000