NSF Award
0339747
This Small Business Innovation Research Phase I project is directed toward the development of cadmium zinc telluride (CdZnTe) single crystal films by using an ion beam layer separation process from bulk single crystals. The separated layers will be transferred and bonded onto Si wafers for applications as substrates for epitaxial growth of mercury cadmium telluride (HgCdTe) films. HgCdTe films are of interest in infrared detectors. The ion beam layer separation process will allow the fabrication of a large number of films from a single bulk crystal, thus providing an economical wafer production technology for infrared detector materials. High-energy (MeV) light ions will be used to produce a buried damaged layer in the bulk crystal. Thermal shock induced by rapid thermal annealing at elevated temperatures may generate lateral crack enabling the layer separation. In Phase I, the feasibility will be demonstrated by finding the conditions of layer separation and by analyzing the separated layer in terms of crystalline quality. <br/><br/>The commercial application of this project is in IR photodetectors and focal plane arrays for many industrial and scientific sensor applications including environmental monitoring, chem-bio detection and medical and space sensors. CdTe and (Cd,Zn)Te alloy crystals have been grown by various techniques including zone refining, vertical gradient freeze (VGF), liquid encapsulated Czochralski (LEC) methods, horizontal and vertical Bridgman techniques. Due to variable yields, none of these methods have produced enough material with the quality needed for today's infrared (IR) detector applications. The proposed technique has the advantage of producing many good quality substrates from a single bulk crystal by ion beam slicing, thus providing an economic way of producing reliable and reproducible quality material. Also, large area CdZnTe substrate for the growth of HgCdTe will be possible by stacking smaller slices in a floor tile pattern on cheaper Si substrates. Bonding with Si substrate will also allow the integration of IR detectors with electronics on a single chip.
