SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates

Information

• NSF Award
• 9760193

Owner

• APPLIED OPTOELECTRONICS, INC.

• Award Id

  9760193

• Award Effective Date

  1/1/1998 - 27 years ago

• Award Expiration Date

  6/30/1998 - 26 years ago

• Award Amount

  $ 99,405.00

• Award Instrument

  Standard Grant

9760193 Lin Applied Optoelectronics will develop mid infra-red (3-5 microns) semiconductor lasers, capable of operating at temperatures greater than 220K, with pulse lengths greater than 10 microseconds, and at average output powers exceeding 10 mW. Type II quantum well lasers will be grown on GaAs universal substrates, allowing epitaxial side-down mounting, and using 980 nm InGaAs diode laser arrays as a pump source. Commercial applications for this technology include in-situ process control, remote chemical sensing, IR spectroscopy and glucose analysis.

• Program Officer

  Michael F. Crowley

• Min Amd Letter Date

  12/11/1997 - 27 years ago

• Max Amd Letter Date

  12/11/1997 - 27 years ago

• ARRA Amount

• Name

  Applied Optoelectronics, Inc.

• City

  Houston

• State

  TX

• Country

  United States

• Address

  5760 Gulfton, #1527

• Postal Code

  770812644

• Phone Number

  7136637708

• First Name

  Chih-Hsiang

• Last Name

  Lin

• Email Address

  chlin@ao-inc.com

• Start Date

  12/11/1997 12:00:00 AM