SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates

Information

  • NSF Award
  • 9760193
Owner
  • Award Id
    9760193
  • Award Effective Date
    1/1/1998 - 26 years ago
  • Award Expiration Date
    6/30/1998 - 25 years ago
  • Award Amount
    $ 99,405.00
  • Award Instrument
    Standard Grant

SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates

9760193 Lin Applied Optoelectronics will develop mid infra-red (3-5 microns) semiconductor lasers, capable of operating at temperatures greater than 220K, with pulse lengths greater than 10 microseconds, and at average output powers exceeding 10 mW. Type II quantum well lasers will be grown on GaAs universal substrates, allowing epitaxial side-down mounting, and using 980 nm InGaAs diode laser arrays as a pump source. Commercial applications for this technology include in-situ process control, remote chemical sensing, IR spectroscopy and glucose analysis.

  • Program Officer
    Michael F. Crowley
  • Min Amd Letter Date
    12/11/1997 - 26 years ago
  • Max Amd Letter Date
    12/11/1997 - 26 years ago
  • ARRA Amount

Institutions

  • Name
    Applied Optoelectronics, Inc.
  • City
    Houston
  • State
    TX
  • Country
    United States
  • Address
    5760 Gulfton, #1527
  • Postal Code
    770812644
  • Phone Number
    7136637708

Investigators

  • First Name
    Chih-Hsiang
  • Last Name
    Lin
  • Email Address
    chlin@ao-inc.com
  • Start Date
    12/11/1997 12:00:00 AM