NSF Award
0539675
This Small Business Innovation Research (SBIR) project will develop an innovative non-volatile spintronic cryptographic key memory that can self-erase without data remanence in the event of tampering and without applied power. Magnetic Random Access Memory (MRAM) is the only technology with potential for this capability. Anti-tamper MRAM could be a major paradigm shift - memories used in ICs presently must be erased by overwriting or disconnection of a power source when tampering is detected. Research objectives include a micromagnetic study of MRAM bit shapes to eliminate data remanence after DC field erasure, finite elements simulation of the integrated system to determine optimal magnet/shield/die configurations, fabrication of spintronic anti-tamper memory cells, and red team analysis of the integrated device. This work will be<br/>accomplished through use of spin-dependent tunneling fabrication and simulation<br/>resources. The anticipated result is a 1 kbit anti-tamper embedded MRAM design and<br/>feasibility analysis.<br/><br/>Commercially, this provides an extra layer of protection on IC-based assemblies such as<br/>smart cards, cash machines etc. In addition, the proposed program will render a system<br/>inoperable in the event of physical tamper. This will be a very useful tool in stemming<br/>the tide of fraudulent usage or compromises of IC-based instruments as well as certain<br/>types of identify theft. Certain groups have targeted various research organizations and<br/>attempted to otherwise compromise their research through attacks on their computer<br/>systems. This would provide additional protection to the data. Identity theft has become<br/>a very large issue for society in general and particularly in the more computerized<br/>societies.
