SBIR Phase II: A Simple and Practical Solid-State 157nm and 193nm Coherent Light Source for Applications in Lithography Development

Information

  • NSF Award
  • 0349601
Owner
  • Award Id
    0349601
  • Award Effective Date
    3/1/2004 - 21 years ago
  • Award Expiration Date
    10/31/2007 - 18 years ago
  • Award Amount
    $ 465,249.00
  • Award Instrument
    Standard Grant

SBIR Phase II: A Simple and Practical Solid-State 157nm and 193nm Coherent Light Source for Applications in Lithography Development

This SBIR Phase II project will develop a new generation of fully-coherent, solid-state, vacuum-Ultraviolet (UV) light sources at 157nm and 193nm, to support the next generation of semiconductor fabrication and metrology, as well as for applications in basic research. Currently available UV excimer sources have limitations such as poor spatial coherence, making them unsuitable for metrology. Therefore, the most promising route to generate fully-spatially-coherent VUV sources is to up convert light from the visible-infrared region of the spectrum, where coherent laser sources already exist. However, a significant technical obstacle towards this goal is the lack of reliable solid-state nonlinear-optical crystals that work in the deep-UV. Unavoidable residual absorption at wavelengths <200nm can lead to long-term damage of nonlinear optical crystals, requiring constant replacement. Furthermore, for frequencies <193nm, no suitable nonlinear optical crystal currently exists. Therefore, gaseous nonlinear-optical media are an attractive alternative to crystals for generating light at wavelengths <200nm. This SBIR Phase II project will use four-wave mixing in gas filled hollow waveguides to develop a tabletop VUV laser capable of generating 10's of mW, and possibly 100's of mW of light at 157nm and at 193nm, in a fully coherent beam, at the very high (10kHz) repetition rates necessary for applications in metrology.<br/><br/><br/>This project has the potential to have a very broad impact on the semiconductor and electronics industries, as well as in basic science. Progress in both the complexity and the speed of microprocessors, DRAM memory, and other integrated electronics has been driven by the ability to make increasingly dense IC's, with ever-smaller feature sizes. This has been enabled by the development of higher-resolution lithographic "steppers" and the use of ever-shorter wavelengths of light for lithography. Because no bright, tabletop, sources currently exist, most short-wavelength materials, nano- and chemical science must take place at synchrotron sources, where access is limited and the sources are not optimized. Therefore, significant gains in productivity could occur with the availability of such a source.

  • Program Officer
    William Haines
  • Min Amd Letter Date
    2/17/2004 - 21 years ago
  • Max Amd Letter Date
    11/30/2006 - 18 years ago
  • ARRA Amount

Institutions

  • Name
    KAPTEYN-MURNANE LABORATORIES, INC.
  • City
    Boulder
  • State
    CO
  • Country
    United States
  • Address
    4775 Walnut St. 102
  • Postal Code
    803013081
  • Phone Number
    3035449068

Investigators

  • First Name
    Sterling
  • Last Name
    Backus
  • Email Address
    sbackus@kmlabs.com
  • Start Date
    2/17/2004 12:00:00 AM

FOA Information

  • Name
    Technology Transfer
  • Code
    110000

Program Element

  • Text
    SMALL BUSINESS PHASE II
  • Code
    5373

Program Reference

  • Text
    MANUFACTURING BASE RESEARCH
  • Code
    9146
  • Text
    MANUFACTURING