SBIR Phase II: High Performance Vertical Heterojunction Bipolar Transistor (HBT) on SiC Using Novel III-Nitride Technology

Information

• NSF Award
• 9983390

Owner

• Corning Incorporated

• Award Id

  9983390

• Award Effective Date

  4/1/2000 - 24 years ago

• Award Expiration Date

  3/31/2002 - 22 years ago

• Award Amount

  $ 399,737.00

• Award Instrument

  Standard Grant

This Small Business Innovative Research Phase II Project is aimed to develop a novel vertical geometry Heterojunction Bipolar Transistor (HBT) based on III-nitride heterostructures grown on SiC (silicon carbide). There is a strong need for high power HBTs for highly linear, high power microwave amplifiers. The innovation of this proposal is to demonstrate WBG (wide band gap) HBTs on SiC that will take advantage of the vertical geometry, and high thermal conductivity of SiC through the use of highly conductive novel nitride buffer and base structure to enhance p-type lateral conductivity with improved vertical transport properties through the base.<br/><br/>The proposed vertical WBG HBT device is a critical component for a new generation of satellite and base stations for wireless communication networks. Another application area is DC switch components for high power electronics.

• Program Officer

  Rosemarie D. Wesson

• Min Amd Letter Date

  3/22/2000 - 24 years ago

• Max Amd Letter Date

  3/22/2000 - 24 years ago

• ARRA Amount

• Name

  Corning Applied Technologies Corporation

• City

  Woburn

• State

  MA

• Country

  United States

• Address

  8A Gill Street

• Postal Code

  018011721

• Phone Number

  6179352030

• First Name

  Peter

• Last Name

  Norris

• Email Address

  peternorris@compuserve.com

• Start Date

  3/22/2000 12:00:00 AM

• Name

  Materials Research

• Code

  106000