SBIR Phase II: Liquid Phase Epitaxy of Potassium Tantalum Niobate on Low Dielectric Constant Substrates

Information

  • NSF Award
  • 0321608
Owner
  • Award Id
    0321608
  • Award Effective Date
    11/1/2003 - 20 years ago
  • Award Expiration Date
    10/31/2005 - 18 years ago
  • Award Amount
    $ 500,000.00
  • Award Instrument
    Standard Grant

SBIR Phase II: Liquid Phase Epitaxy of Potassium Tantalum Niobate on Low Dielectric Constant Substrates

This SBIR Phase II project proposes to develop the Liquid Phase Epitaxy (LPE) of potassium tantalum niobate (KTN) on a cubic perovskite substrate. In this manner both components of the film/substrate composite may be optimized for device performance. KTN has almost two orders of magnitude higher electrooptic coefficients than current generation lithium niobate waveguides, which would permit shorter path lengths, lower bias voltages or some combination of the two. The new, low dielectric constant substrate material developed in Phase I will enable better matching of the effective microwave dielectric constant to the optical dielectric constant of the film material and achieve lower bias fields. In Phase II, the researchers will develop the new substrate material to commercial quality and size. LPE of KTN will be developed from a new innovative flux system that allows excellent control of growth and superior film properties. Both film and substrate will be fully characterized and optimized as a composite. The process and product will be scaled up to full commercial size. IPI will interact with strategic partner device manufacturers to optimize the material and realize device applications. <br/><br/>Electrooptic devices are used in any photonics application where an electrical signal can be used to change the state of a beam of light. While the best-known applications for electrooptic devices are in telecommunications, customers can be found wherever light is used to move information including optical computing, analog and digital signal processing, information processing and sensing. Devices include phase and amplitude modulators, Q-switches, multiplexers, switch arrays, couplers, polarization controllers, deflectors, correlators, sensors, potential transformers and optical parametric oscillators. Potential customers are noticeably found in both the electric power industry and the military. Initial applications in sensors will have an immediate potential for impact in reliability of electric power distribution through failure anticipation and prevention and conservation of electric power through monitoring and control. The proposed work will enable electrooptic modulators, switches and innovative new photonic device applications with lower costs, smaller footprints and lower power budgets. All this contributes to improvements of the infrastructure of the Internet and more rapid, lower cost deployment, especially in the local loop.

  • Program Officer
    TIMOTHY J. RUDD
  • Min Amd Letter Date
    10/21/2003 - 20 years ago
  • Max Amd Letter Date
    10/21/2003 - 20 years ago
  • ARRA Amount

Institutions

  • Name
    INTEGRATED PHOTONICS, INC.
  • City
    Hillsborough
  • State
    NJ
  • Country
    United States
  • Address
    132 Stryker Lane
  • Postal Code
    088441937
  • Phone Number
    9082818000

Investigators

  • First Name
    Vincent
  • Last Name
    Fratello
  • Email Address
    VinceF@QI2.com
  • Start Date
    10/21/2003 12:00:00 AM

FOA Information

  • Name
    Telecommunications
  • Code
    206000

Program Element

  • Text
    SMALL BUSINESS PHASE II
  • Code
    5373

Program Reference

  • Text
    ELECT, PHOTONICS, & DEVICE TEC
  • Code
    1517
  • Text
    INFORMATION INFRASTRUCTURE & TECH APPL
  • Code
    9139
  • Text
    HIGH PERFORMANCE COMPUTING & COMM