SBIR Phase II: Nanoporous Silica Slurries for Enhanced Chemical Mechanical Planarization (CMP) of Low k Dielectrics

Information

  • NSF Award
  • 0349609
Owner
  • Award Id
    0349609
  • Award Effective Date
    3/1/2004 - 20 years ago
  • Award Expiration Date
    8/31/2006 - 18 years ago
  • Award Amount
    $ 636,889.00
  • Award Instrument
    Standard Grant

SBIR Phase II: Nanoporous Silica Slurries for Enhanced Chemical Mechanical Planarization (CMP) of Low k Dielectrics

This Small Business Innovation Research Phase II project aims to develop unique chemical mechanical planarization (CMP) slurries based on nanoporous silica particles that will meet or exceed CMP needs of low k dielectrics for the 80 nm and beyond semiconductor manufacturing nodes. The integration of low k dielectrics (dielectric constant 2.2 < k < 3.3) with copper metal lines is expected to considerably reduce RC (resistance x capacitance) delay for > 10 GHz CMOS expected devices in the next 3-5 years. One of the key issues plaguing the semiconductor industry is the chemical mechanical planarization (CMP) of copper/tantalum/low k dielectric materials. The low k dielectrics are fragile and are susceptible to both delamination and scratching (increased defectivity). Standard slurries employing hard abrasives may not meet the requirements for sub-80 nm CMOS devices which are expected to employ low k dielectric materials. The program proposes to develop & commercialize gentle CMP slurries based on nanoporous silica particles which exhibit reduced hardness and better stability. Combined with unique chemical formulations, these slurries are expected to achieve lower defectivity (surface scratching) and lower stress polishing than standard slurries. In this Phase II project extensive experiments will be conducted both in-house and with our partners (semiconductor chip manufacturers) to optimize performance and integration issues. <br/><br/><br/>Commercially this research activity has significant impact not only in the semiconductor manufacturing areas, but also in may other areas such as biotechnology and nanotechnology, which are the key areas identified by the government for the future viability of US business. First and foremost it will ensure US can maintain its lead in CMP, even though semiconductor manufacturing jobs have been migrating overseas. As CMP slurries is the largest value added application of the nanoparticle technology (> 50%) excellence in this area will provide employment to nanotechnology graduates in the near future and could be a direct application of the skills they have acquired. This research will lead to the creation of faster electronic devices, which will in turn benefit the society to become more economically productive. The development of nanoporous particle technology can have applications in several other areas including controlled drug delivery systems.

  • Program Officer
    William Haines
  • Min Amd Letter Date
    2/23/2004 - 20 years ago
  • Max Amd Letter Date
    3/27/2006 - 18 years ago
  • ARRA Amount

Institutions

  • Name
    SINMAT, INC.
  • City
    GAINESVILLE
  • State
    FL
  • Country
    United States
  • Address
    1912 NW 67th Place
  • Postal Code
    326531649
  • Phone Number
    3523347237

Investigators

  • First Name
    Deepika
  • Last Name
    Singh
  • Email Address
    singh@sinmat.com
  • Start Date
    2/23/2004 12:00:00 AM

FOA Information

  • Name
    Industrial Technology
  • Code
    308000
  • Name
    Materials Research
  • Code
    106000

Program Element

  • Text
    SMALL BUSINESS PHASE II
  • Code
    5373
  • Text
    CENTERS FOR RSCH EXCELL IN S&T
  • Code
    9131

Program Reference

  • Text
    Nanomanufacturing
  • Code
    1788
  • Text
    RET SUPPLEMENTS
  • Code
    7218
  • Text
    WOMEN, MINORITY, DISABLED, NEC
  • Code
    9102
  • Text
    SINGLE DIVISION/UNIVERSITY - INDUSTRY
  • Code
    9163
  • Text
    UNDERGRADUATE EDUCATION
  • Code
    9178
  • Text
    RES EXPER FOR UNDERGRAD-SUPPLT
  • Code
    9251
  • Text
    ADVANCED MATERIALS & PROCESSING PROGRAM