NSF Award
0091454
This Small Business Innovation Research (SBIR) Phase II project will develop a prototype high speed, non-invasive, optical probe for electric fields, and hence waveforms, in semiconductor devices. The technique is designed to work on any semiconductor regardless of its crystal structure and can be used for both imaging and single point detection without degradation of temporal resolution. Because the technique is optically based, no parasitic capacitance is added to the device being measured. A femtosecond laser probes the device to be measured, and temporal resolution is several orders of magnitude faster than the time resolution required to probe present devices. Bandwidths of greater than 10 terahertz should be possible.<br/><br/>This non-invasive probe technique will be applied to silicon-based devices. In their production and testing in the semiconductor industry.
