SBIR Phase II: Passivation of III-V Devices

Information

• NSF Award
• 9422662

Owner

• TriQuint Semiconductor, Inc.

• Award Id

  9422662

• Award Effective Date

  9/1/1997 - 27 years ago

• Award Expiration Date

  8/31/1999 - 25 years ago

• Award Amount

  $ 251,738.00

• Award Instrument

  Standard Grant

*** 94-22662 TriQuint Semiconductor, Inc. This Small Business Innovation Research (SBIR) Phase II project addresses a passivation coating for semiconductor laser diode optical facets. Phase I showed that 980-nanometer quantum well lasers operated at high power with extended lifetime capacity when its laser diode facets were treated for passivation by cubic-gallium sulfide. In Phase II laser facet temperatures will be monitored by Raman spectroscopy, and failure modes will be evaluated by chemical and structural analyses. Lasers to be used in Phase II will have a master oscillator power amplifier (MOPA) and unstable resonator 980-nanometer quantum well structures. This technology is expected to find application in optical amplifiers in optical communication networks and more generally in passivation of gallium arsenide minority based devices, such as heterojunction bipolar transistors (HBTs), light emitting diodes (LEDs), and solar cells. ***

• Program Officer

  Michael F. Crowley

• Min Amd Letter Date

  8/18/1997 - 27 years ago

• Max Amd Letter Date

  8/18/1997 - 27 years ago

• ARRA Amount

• Name

  TriQuint Semiconductor, Inc

• City

  Beaverton

• State

  OR

• Country

  United States

• Address

  3625A SW Murray Boulevard

• Postal Code

  970052359

• Phone Number

  5036443535

• First Name

  Andrew

• Last Name

  MacInnes

• Start Date

  8/18/1997 12:00:00 AM

• Name

  Engineering-Electrical

• Code

  55