SBIR Phase II: Self Assembled Nanocrystal Thin Film Transistor

Information

  • NSF Award
  • 0924556
Owner
  • Award Id
    0924556
  • Award Effective Date
    8/1/2009 - 14 years ago
  • Award Expiration Date
    7/31/2011 - 12 years ago
  • Award Amount
    $ 500,000.00
  • Award Instrument
    Standard Grant

SBIR Phase II: Self Assembled Nanocrystal Thin Film Transistor

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).<br/><br/>This NSF Phase II SBIR program aims to develop and demonstrate large area and high performance nanocrystal thin film transistor (NC-TFT) based active matrix backplanes for flexible display applications. A novel electrostatic self assembly (ESA) technology will allow significant cost reduction using organic, inorganic and hybrid materials. Such a molecular-level self-assembly approach to form TFT materials and devices offers numerous advantages since very different materials can be incorporated uniformly, using the same chemical process at room temperature, thus allowing the formation of TFT films on virtually any substrate material. During Phase I, single and arrayed NC-TFT devices were developed on rigid and flexible substrates with reliability and performance comparable to that of amorphous silicon based TFT devices. High-K hybrid gate dielectrics, such as ZrO2/SiO2 hybrid thin films, were also deposited through the same ESA method. These films exhibited a dielectric constant larger than that of SiO2 (4.7 versus 3.9). Self-assembled gold nanoparticle-based memory devices. I-V tests were also investigated and fabricated. I-V tests were conducted on the self-assembled TFT devices, as well as on operational memory devices. The field effect mobility of the prototype TFTs can reach 0.3 cm2/V/s and an On-Off ratio of 1000 was achieved. We also fabricated TFT-based gas sensors, which demonstrated high sensitivity to certain gas species such as ammonia. In the current project, we will design and develop prototype NCTFT-based active matrix backplanes on flexible substrates with improved efficiency and performance and reduced cost, and beta-test those backplanes integrated with the E-paper based flexible display films and partners' flexible electronics and sensor platforms. This project also aims to establish a complete manufacturing process that is ready for production and licensing to selected flexible display customers.<br/><br/>The broader impact/commercial potential will be the development of flexible displays that offer many potential benefits over other display technologies, including reductions in cost, weight and power consumption, improved performance, ruggedness, and reliability. Other near term applications include 1) direct replacement for conventional circuit boards, wiring harnesses and flex interconnects on army vehicles, 2) as integrated sensing, signal processing and communicating clothing for army personnel, 3) electronic<br/>applications such as RF ID tags, antennas and stealth coatings, and 4) very large, mechanically-flexible deployable systems. This research has shown promise in producing devices of acceptable efficiencies at significantly reduced cost using organic, inorganic and conductive polymer materials. A revolutionary breakthrough in reducing the costs of TFT devices may be achieved if the semiconductor is deposited from solution onto large flexible substrates in roll-to-roll coating machines.

  • Program Officer
    Ben Schrag
  • Min Amd Letter Date
    7/28/2009 - 14 years ago
  • Max Amd Letter Date
    7/28/2009 - 14 years ago
  • ARRA Amount
    500000

Institutions

  • Name
    Nanosonic Inc.
  • City
    Pembroke
  • State
    VA
  • Country
    United States
  • Address
    158 Wheatland Drive
  • Postal Code
    241363645
  • Phone Number
    5406266266

Investigators

  • First Name
    Yuhong
  • Last Name
    Kang
  • Email Address
    ekang@nanosonic.com
  • Start Date
    7/28/2009 12:00:00 AM

FOA Information

  • Name
    Industrial Technology
  • Code
    308000

Program Element

  • Text
    SMALL BUSINESS PHASE II
  • Code
    5373

Program Reference

  • Text
    ELECT, PHOTONICS, & DEVICE TEC
  • Code
    1517
  • Text
    ELECTRONIC/PHOTONIC MATERIALS
  • Code
    1775
  • Text
    WOMEN, MINORITY, DISABLED, NEC
  • Code
    9102
  • Text
    INFORMATION INFRASTRUCTURE & TECH APPL
  • Code
    9139
  • Text
    HIGH PERFORMANCE COMPUTING & COMM
  • Text
    RECOVERY ACT ACTION
  • Code
    6890