SBIR Phase II: Synthesis and Characterization of High Purity ZnGeP2

Information

  • NSF Award
  • 9501330
Owner
  • Award Id
    9501330
  • Award Effective Date
    4/1/1997 - 27 years ago
  • Award Expiration Date
    3/31/1999 - 25 years ago
  • Award Amount
    $ 299,998.00
  • Award Instrument
    Standard Grant

SBIR Phase II: Synthesis and Characterization of High Purity ZnGeP2

9501330 Ruderman This Small Business Innovation Research Phase II project addresses the need for a process to grow large Zinc-Germanium-Phosphorous (Zn-Ge-P) single crystals of high optical quality and low absorption in the 1 to 3 micron optical region, at low cost. The research objectives include: (1) measuring phase equilibria in the Zn-Ge-P system; (2) extending understanding of the defect structures in these crystals; (3) determining the role of important impurities; (4) developing a new synthesis and crystal growth process; (5) annealing studies of grown crystals to decrease optical absorption; and (6) extensive characterization of grown crystals. These Zn-Ge-P crystal with improved optical transmission and crystal quality will provide efficient generation of tunable laser radiation from 2.5 to 12 microns. Potential applications include remote detection of contaminants, defense uses in laser jamming and warning systems and enhanced spectral analysis techniques for chemical analysis.

  • Program Officer
    Joseph E. Hennessey
  • Min Amd Letter Date
    4/4/1997 - 27 years ago
  • Max Amd Letter Date
    4/4/1997 - 27 years ago
  • ARRA Amount

Institutions

  • Name
    INRAD, Inc.
  • City
    NORTHVALE
  • State
    NJ
  • Country
    United States
  • Address
    181 LEGRAND AVE
  • Postal Code
    076472404
  • Phone Number
    2017671910

Investigators

  • First Name
    Warren
  • Last Name
    Ruderman
  • Email Address
    inrad@aol.com
  • Start Date
    4/4/1997 12:00:00 AM