SBIR Phase II: Ultra-Low k Interlayer Dielectrics for 22 nm Technology Node and Beyond

Information

  • NSF Award
  • 0848490
Owner
  • Award Id
    0848490
  • Award Effective Date
    1/15/2009 - 15 years ago
  • Award Expiration Date
    3/31/2011 - 13 years ago
  • Award Amount
    $ 500,000.00
  • Award Instrument
    Standard Grant

SBIR Phase II: Ultra-Low k Interlayer Dielectrics for 22 nm Technology Node and Beyond

This Small Business Innovation Research Phase II project is to develop a new technology for manufacturing ultra-low dielectric constant materials for leading-edge logic devices for the 22 nm technology node and beyond. The research approach is based on the bottom-up synthesis of honeycomb-like nano-structured films in which porogen component is pre-built into the nano-sized cells and can be decomposed in a strictly controlled manner. <br/><br/>By extending microchip miniaturization this project may impact information technologies and related fields. This program may also significantly expand the overall knowledge and understanding of nano-structured materials and nanotechnology in general.

  • Program Officer
    Grace Jinliu Wang
  • Min Amd Letter Date
    1/12/2009 - 15 years ago
  • Max Amd Letter Date
    1/12/2009 - 15 years ago
  • ARRA Amount

Institutions

  • Name
    DENDRITECH, INC
  • City
    MIDLAND
  • State
    MI
  • Country
    United States
  • Address
    3110 SCHUETTE DRIVE
  • Postal Code
    486426944
  • Phone Number
    9894962016

Investigators

  • First Name
    Petar
  • Last Name
    Dvornic
  • Email Address
    pdvornic@pittstate.edu
  • Start Date
    1/12/2009 12:00:00 AM

FOA Information

  • Name
    Industrial Technology
  • Code
    308000