The invention is from the field of optics. Specifically it is from the field of scatterometry.
Publications and other reference materials referred to herein are numerically referenced in the following text and respectively grouped in the appended Bibliography which immediately precedes the claims.
The progress in microelectronics (these days already nanoelectronics) and related technologies (computers, cellphones, memories, etc.) has been steadily driven by miniaturization of the feature sizes on the integrated circuits (IC) (hence increasing the density) for the last half a century.
To facilitate this progress it is essential to be able to measure these microelectronics structures. Manufacturing and fabrication of the IC can't be done without monitoring and control of the process.
One of the key technologies used for these measurements is scatterometry, which is a non-imaging optical metrology technique. It is based on the observation and analysis of changes in intensity of light scattered from a periodic micro/nano structure. Scatterometry is based on the dependence of the diffraction/scattering efficiency from the sample to variation in the exact form factor and material composition of the sample.
Currently, state-of-the art scatterometry measurements in the industry are typically performed in the spectral range of 200 nm-1000 nm or part of this spectrum. Since the significance in scatterometry measurements, i.e. how easily or efficiently or to which extent the measured structure can be characterized or changes to the measured structure detected from the observed scattered signal, is inversely proportional to the measured wavelength, this implies that shorter wavelengths will facilitate reconstruction of more complex structures and provide better sensitivity and resolution. Therefore extending the measurements into the deep UV and soft X-ray spectral range has a potential for significantly enhancing the capability and applicability of scatterometry measurements in industry.
It is therefore a purpose of the present invention to provide a method and system that is configured for performing scatterometry measurements using the deep UV and soft X-ray spectral range.
Further purposes and advantages of this invention will appear as the description proceeds.
In a first aspect the invention is a method of measuring in the UV, XUV, x-ray spectral region the reflectance of a sample comprised of structures created on a substrate as a function of incident angle, polarization, wavelength, the scattered light angle, and, in the case of a periodic structure, the diffraction order. The method comprises:
Embodiments of the method comprise the additional step of applying scatterometry algorithms to the reflectance determined in step (f) in order to determine properties of the structures created on the substrate.
In embodiments of the method the grazing incidence XUV spectrometer is replaced with one of the following:
In embodiments of the method the scanning is at least one of linear and rotational.
In a second aspect the invention is a system for extending scatterometry measurements of periodic structures created on a substrate into the deep UV and soft X-ray regions of the electromagnetic spectrum. The system comprises:
In embodiments of the system the grazing incidence XUV spectrometer is replaced with one of the following:
Embodiments of the system may comprise at least one of:
In embodiments of the system the HHG focusing optics may comprise at least one of reflective and diffractive elements.
All the above and other characteristics and advantages of the invention will be further understood through the following illustrative and non-limitative description of embodiments thereof, with reference to the appended drawings.
The invention is a method of extending scatterometry measurements of periodic structures created for example on silicon or any other substrate into the deep UV and soft X-ray regions of the electromagnetic spectrum. The method is carried out by measuring the diffraction/scattering patterns of a high harmonic generated (HHG) beam from a sample, i.e. structures on the surface of the substrate. The scattered/diffracted beam is measured using a grazing incidence XUV spectrometer (schematically shown in
The optical setup that is described in [1] is shown schematically in
Methods of generating HHG beams and the components of XUV spectrometer 10 are well known in the art and will not be described herein. A typical diffraction grating 24 that can be used for the scatterometer measurements is described, for example in [2]. A suitable imaging MCP is supplied, for example, by Photonis USA Inc., Sturbridge Mass., USA and a suitable XUV CCD camera is, for example, a Newton SO model manufactured by Andor Technology Ltd., Belfast, Northern Ireland.
The measurements are carried out using a setup similar to that described in [1]. The optical setup is shown schematically in
Since polarization scanning and control is important for scatterometry a polarization rotator shown as (PR) is introduced into the system as shown in
Typically the HHG spectrum is discrete while for scatterometry it is useful to have a continuous spectrum. Therefore, prior to focusing, the spectrum of the laser pulse can be optionally broadened using a spectral broadening apparatus (SB) and recompressed using a dispersion compensation assembly (DC). This will allow a continuous or semi-continuous spectrum to be obtained instead of discrete harmonics. One example of a SB is a hollow fiber filled with inert gas; another is a filament created in gas medium. Examples of a DC are a set of chirped mirrors or a prism based compressor.
The HHG beam is then directed to fall on the sample 18, which in [1] was a slit mounted so that it could be moved up and down vertically as indicated by arrow 20 in
In embodiments of the system, the grazing incidence XUV spectrometer shown in
For scatterometry measurements it is important to be able to measure the scattering from features on the substrate as a function of the angle of incidence of the incoming beam.
In
In order to prevent the technically difficult task of rotating the spectrometer in
In the embodiment shown in
As the scanning angle can be achieved using any of the configurations shown in
As the sample 18 is rotated around axis 30, the ratio of the intensity of the beam reflected from the sample to that reflected from a blank, well characterized substrate placed instead of the sample for calibration and the polarization parameters provide the information used to reconstruct the structure on the sample substrate exactly as is done in scatterometry using visible wavelengths.
By means of the components shown in
Although embodiments of the invention have been described by way of illustration, it will be understood that the invention may be carried out with many variations, modifications, and adaptations, without exceeding the scope of the claims.
This application is the U.S. National Stage entry of International Application Number PCT/IL2019/050206 filed under the Patent Cooperation Treaty having a filing date of Feb. 24, 2019, which claims priority to U.S. Provisional Patent Application No. 62/664,291 having a filing date of Apr. 30, 2018, which are incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
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PCT/IL2019/050206 | 2/24/2019 | WO |
Publishing Document | Publishing Date | Country | Kind |
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WO2019/211827 | 11/7/2019 | WO | A |
Number | Name | Date | Kind |
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8994944 | Cramer | Mar 2015 | B2 |
9113540 | Hori | Aug 2015 | B2 |
20160025480 | Goodwin | Jan 2016 | A1 |
20170315456 | Lin | Nov 2017 | A1 |
20190204757 | Brussaard | Jul 2019 | A1 |
Entry |
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EUV Scatterometer with a high-harmonic generation EUV source, Ku et al., Opitical Express, vol. 24 (24), Nov. 28, 2016. |
Fiber Bragg grating inscription combining DUV sub-picosecond laser pulses and two-beam interferometry, Becker et al., Optics Express, vol. 16(23), Nov. 10, 2008, pp. 19169-178. |
International Search Report for PCT/IL2019/050206 dated May 21, 2019, 3 pages. |
Written Opinion for PCT/IL2019/050206 dated May 21, 2019, 4 pages. |
Number | Date | Country | |
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20210239464 A1 | Aug 2021 | US |
Number | Date | Country | |
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62664291 | Apr 2018 | US |