Secondary Ion Mass Spectrometer (SIMS) Analysis of Defects in Semiconductors

Information

• NSF Award
• 8860839

Owner

• CHARLES EVANS & ASSOCIATES, INC.

• Award Id

  8860839

• Award Effective Date

  1/1/1989 - 36 years ago

• Award Expiration Date

  9/30/1989 - 35 years ago

• Award Amount

  $ 49,766.00

• Award Instrument

  Standard Grant

Traditional methods for characterizing defects in semiconductors are not entirely adequate at the VLSI/ULSI level of integration. SIMS coupled with defect decoration by a SIMS-sensitive element is proposed as a complementary method. The objectives of this Phase I project are: (1) to determine how well SIMS can detect oxygen precipitates, dislocation loops, and stacking faults in silicon when a SIMS-sensitive element is used to decorate the defects; and (2) to determine the quantitative relationship between the SIMS measurement of the decorative element and the defect density and size. The primary decorative element to be studied is fluorine.

• Program Officer

  Darryl G. Gorman

• Min Amd Letter Date

  11/16/1988 - 36 years ago

• Max Amd Letter Date

  11/16/1988 - 36 years ago

• ARRA Amount

• Name

  Charles Evans & Associates

• City

  Redwood City

• State

  CA

• Country

  United States

• Address

  301 Chesapeake Drive

• Postal Code

  940634723

• Phone Number

  4153694567

• First Name

  Richard

• Last Name

  Hockett

• Start Date

  1/1/1989 12:00:00 AM