Claims
- 1. A method of forming a magnetic device, comprising:
selective area deposition of a ferromagnetic material on a substrate, said substrate surface partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of said ferromagnetic material.
- 2. The method according to claim 1, wherein said ferromagnetic material is CrO2.
- 3. The method according to claim 2, wherein at a predetermined temperature of said substrate, said CrO2 grows only on certain surfaces of said substrate and does not form on other surfaces.
- 4. The method according to claim 3, wherein said substrate comprises one of a single crystal sapphire (Al2O3) and titanium oxide (TiO2).
- 5. The method according to claim 1, wherein at a predetermined temperature of said substrate, said ferromagnetic material grows only on certain surfaces of said substrate and does not form on other surfaces.
- 6. The method according to claim 2, wherein said substrate includes a crystal structure having a shape one of trigonal, hexagonal, monoclinic, orthorhombic, tetragonal, and cubic.
- 7. The method according to claim 1, wherein said substrate comprises one of a single crystal sapphire (Al2O3) and titanium oxide (TiO2).
- 8. The method according to claim 1, wherein a portion of said substrate includes a material that is amorphous.
- 9. The method according to claim 1, wherein a portion of said substrate comprises one of amorphous SiO2, Si3N4, and a compound of amorphous SiO2 and Si3N4.
- 10. A method of forming a magnetic device, comprising:
selective area deposition of a ferromagnetic material on a substrate, wherein a portion of said substrate contains material that bears a symmetry relation with the ferromagnetic material, and wherein said substrate comprises an amorphous material upon which the ferromagnetic material does not grow and which does not share a symmetry relation with the ferromagnetic material.
- 11. The method according to claim 10, wherein said amorphous material comprises one of SiO2 and Si3N4.
- 12. A method of forming a magnetic device, comprising:
coating a substrate with a ferromagnetic layer; depositing an insulating barrier layer on said ferromagnetic layer; subsequent to lithographic patterning of said insulating barrier layer, depositing a SiO2 layer; opening contact holes in said SiO2 layer to said insulating barrier layer; selectively growing a ferromagnetic layer in the contact holes; and depositing a metallization layer on the selectively grown ferromagnetic layer.
- 13. The method according to claim 12, wherein said ferromagnetic material comprises CrO2.
- 14. The method according to claim 12, wherein said metallization is formed of Au and wherein said substrate comprises a semiconductor substrate.
- 15. The method according to claim 12, wherein a bottom magnetic electrode of said device includes a CrO2 layer and an insulating barrier layer, said CrO2 layer and said insulating barrier layer being photolithographically patterned and etched prior to the deposition of SiO2 layer and subsequent selective growth of the CrO2 layer and the metallization layer.
- 16. The method according to claim 12, wherein said insulating barrier layer includes at least one of TiO2 and Al2O3
- 17. The method according to claim 12, wherein said substrate includes an amorphous material upon which the ferromagnetic material does not grow and which does not share a symmetry relation with the ferromagnetic material.
- 18. The method according to claim 17, wherein said amorphous material comprises one of SiO2, Si3N4, and a compound of SiO2 and Si3N4.
- 19. A method of forming a film, comprising:
coating a single crystal substrate with a SiO2 layer, said single crystal substrate comprising one of a TiO2 substrate and a sapphire substrate; forming a window in the SiO2 layer; and selectively growing ferromagnetic material in said window.
- 20. The method according to claim 19, wherein lateral overgrowth from sides into the SiO2-coated single crystal substrate occurs due to growth of side facets of the ferromagnetic material layer having been deposited.
- 21. The method according to claim 20, wherein said lateral overgrowth is substantially defect-free.
- 22. The method according to claim 20, wherein said substrate includes an amorphous material upon which the ferromagnetic material does not grow and which does not share a symmetry relation with the ferromagnetic material.
- 23. The method according to claim 22, wherein said amorphous material comprises one of SiO2, Si3N4, and a compound of SiO2 and Si3N4.
- 24. A storage device, comprising:
a substrate having a ferromagnetic material selectively deposited thereon, said substrate surface partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of said ferromagnetic material.
- 25. The storage device according to claim 24, wherein said ferromagnetic material comprises CrO2.
- 26. The storage device according to claim 25, wherein at a predetermined temperature of said substrate, said CrO2 grows only on certain surfaces of said substrate and does not form on other surfaces.
- 27. The storage device according to claim 26, wherein said substrate comprises one of a single crystal sapphire (Al2O3) and titanium oxide (TiO2).
- 28. The storage device according to claim 25, wherein said substrate includes a crystal structure having a shape one of trigonal, hexagonal, monoclinic, orthorhombic, tetragonal, and cubic.
- 29. The storage device according to claim 25, wherein said substrate comprises one of a single crystal sapphire (Al2O3) and titanium oxide (TiO2).
- 30. The storage device according to claim 25, wherein a portion of said substrate includes a material that is amorphous.
- 31. The storage device according to claim 25, wherein a portion of said substrate comprises one of amorphous SiO2, Si3N4, and a compound of amorphous SiO2, and Si3N4.
- 32. A device, comprising:
a substrate having thereon selective area-deposited ferromagnetic material, wherein a portion of said substrate contains material that bears a symmetry relation with the ferromagnetic material, and wherein said substrate comprises one of an amorphous material upon which the ferromagnetic material does not grow and which does not share a symmetry relation with the ferromagnetic material.
- 32. The device according to claim 31, wherein said amorphous material comprises one of SiO2, Si3N4, and a compound of SiO2 and Si3N4.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] The present application is related to U.S. patent application Ser. No. 09/______, filed on ______, to Supratik Guha et al., entitled “HIGH DENSITY MAGNETIC RECORDING MEDIUM UTILIZING SELECTIVE GROWTH OF FERROMAGNETIC MATERIAL” having IBM Docket No. YO998-269, assigned to the present assignee, and incorporated herein by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09172659 |
Oct 1998 |
US |
Child |
09879156 |
Jun 2001 |
US |