Claims
- 1. A gas-phase process to form para-ethyltoluene in greater than 95 weight percent isomeric purity comprising contacting toluene and ethylene at a temperature between about 250.degree. C. to about 400.degree. C. and in a mol ratio, toluene to ethylene, of about 2 to about 20 with a magnesium compound-impregnated catalyst composition containing between about 4 and about 20 weight percent magnesium comprising a crystalline silica molecular sieve, essentially aluminum-free and containing between about 0.3 and about 4 weight percent nonexchangeable gallium, composited in alumina or silica such that the composite contains between about 20 to about 80 percent by weight of said sieve, said sieve providing an X-ray pattern comprising the following X-ray diffraction lines and assigned strengths:
- ______________________________________Interplanar InterplanarSpacing Assigned Spacing Assignedd, .ANG. Strength d, .ANG. Strength______________________________________11.10 .+-. 0.20 VS 4.25 .+-. 0.10 VW9.96 .+-. 0.20 MS 3.84 .+-. 0.10 MS6.34 .+-. 0.20 W 3.71 .+-. 0.10 M5.97 .+-. 0.20 W 3.64 .+-. 0.10 W5.55 .+-. 0.20 W 2.98 .+-. 0.10 VW______________________________________
- 2. A gas-phase process to form para-ethyltoluene in greater than 95 weight percent isomeric purity comprising contacting toluene and ethylene at a temperature between about 250.degree. C. and about 400.degree. C. and in a mol ratio, toluene to ethylene, of about 2 to about 20 with a magnesium compound-impregnated catalyst composition containing between about 4 and about 20 weight percent magnesium, said catalyst composition comprising a crystalline silica molecular sieve, essentially aluminum-free and containing between about 0.3 and about 4 weight percent nonexchangeable gallium, composited in alumina or silica such that the composite contains between about 20 to about 80 percent by weight of said sieve, said sieve made by crystallization from an aqueous solution containing a base, an organic templating material, a gallium ion-affording material and an oxide of silicon, and providing an X-ray pattern comprising the following X-ray diffraction lines and assigned strengths:
- ______________________________________Interplanar InterplanarSpacing Assigned Spacing Assignedd, .ANG. Strength d, .ANG. Strength______________________________________11.10 .+-. 0.20 VS 4.25 .+-. 0.10 VW9.96 .+-. 0.20 MS 3.84 .+-. 0.10 MS6.34 .+-. 0.20 W 3.71 .+-. 0.10 M5.97 .+-. 0.20 W 3.64 .+-. 0.10 W5.55 .+-. 0.20 W 2.98 .+-. 0.10 VW______________________________________
Parent Case Info
This is a continuation of application Ser. No. 901,613, filed Aug. 29, 1986, and now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3702886 |
Argauer et al. |
Nov 1972 |
|
4086287 |
Kaeding et al. |
Apr 1978 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
60-19726 |
Jan 1985 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
901613 |
Aug 1986 |
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