Claims
- 1. In a nanolaminate composite for electrophoretic and electrochemical applications having at least one surface containing exposed conductive layers and exposed insulative layers, the improvement comprising:
said at least one surface including at least one of baffles, trenches, sieves, and channels formed therein.
- 2. The improvement of claim 1, wherein said at least one surface includes protruding baffles selected from one of said conductive layers and insulative layers.
- 3. The improvement of claim 2, wherein said at least one surface includes at least one trench intermediate a pair of said protruding baffles.
- 4. The improvement of claim 1, wherein said at least one surface includes a channel extending at least partially through said nanolaminate composite, said channel being constructed to form exposed conductive and insulative layers on the surface thereof.
- 5. The improvement of claim 4, additionally including at least one protruding baffle in said channel.
- 6. The improvement of claim 1, wherein said at least one surface includes a nanometer-scale sieve to separate larger particles from smaller particles.
- 7. The improvement of claim 6, wherein said at least one surface includes a plurality of channels located on opposite sides of said sieve.
- 8. The improvement of claim 1, wherein said at least one surface includes a channel extending through said nanolaminate composite.
- 9. The improvement of claim 8, wherein said at least one surface includes recessed conductive layers and protruding insulative layers to permit only small particles to contact the conductive layers.
- 10. A method for forming nanolaminate structures having alternating conductor layers and insulator layers, comprising:
providing a nanolaminate structure having at least one surface with exposed conductor layers and insulator layers, and removing at least one portion of the at least one surface to form therein at least one of a baffle, trench, sieve, and channel.
- 11. The method of claim 10, wherein the removing is carried out using at least one of the group consisting of chemically-selective etching and lithographic processing.
- 12. The method of claim 11, wherein the lithographic processing is carried out by photolithographic or other patterning techniques selected from the group consisting of dip-pen lithography, lithographic stamping, ink-jet printing, other means of mashing and exposed patterned regions, followed by chemical or plasma etching.
- 13. The method of claim 11, wherein the lithographic processing is carried out by lithographic patterning and etching.
- 14. The method of claim 10, wherein the removing is carried out by recessing one of the conductor layers or insulator layers to form protruding baffles of the other of the conductor layers and insulator layers.
- 15. The method of claim 14, wherein the recessing is carried out by etching away a portion of the insulator layers and forming a trench between adjacent conductor layers.
- 16. The method of claim 14, wherein the recessing is carried out by etching away a portion of the conductor layers and forming a trench between adjacent insulator layers.
- 17. The method of claim 10, wherein the removing is carried out by forming a trench at least partially through the nanolaminate structure, such that side surfaces of the trench are composed of the alternating conductor layers and insulator layers.
- 18. The method of claim 16, wherein the removing is carried out utilizing lithographic patterning and etching.
- 19. The method of claim 16, additionally including recessing by etching one of the conductor layer or the insulator layers.
- 20. The method of claim 10, wherein the removing is carried out by forming a nanometer-scale sieve in the at least one surface, and forming a pair of channels on opposite sides of the sieve.
- 21. The method of claim 1, wherein the removing is carried out by forming a trench through the nanolaminate structure, and etching away portions of either the conductor layers or insulator layers to form recesses intermediate protruding baffles.
Government Interests
[0001] The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.