Claims
- 1. A three-dimensional molecular array formed on one of a conductor and semiconductor surface, comprising at least one columnar stack comprising a plurality of substituted aromatic rings, wherein the aromatic rings of each columnar stack lie about parallel to the surface, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings.
- 2. The array of claim 1, wherein the array is a one-dimensional conductor having conductance in a direction about perpendicular to the surface.
- 3. The array of claim 1, wherein the columnar stack is chiral.
- 4. The array of claim 1, wherein the aromatic rings are not covalently bound to each other.
- 5. The array of claim 4, wherein each aromatic ring comprises a first substituent in each of the 2, 4, and 6 positions of the ring, wherein the first substituent is not hydrogen, and a second substituent in each of the 1, 3, and 5 positions of the ring, and the second substituent is selected from the group consisting of a carboxylic group and a group having the structural formula
- 6. The array of claim 5, wherein the first substituent is n-dodecyloxy, and the second substituent is selected from the group consisting of substituents I-IX:
- 7. The array of claim 4, wherein each aromatic ring comprises a sulfinamide substituent in each of the 1, 3, and 5 positions of the ring, wherein the nitrogen atom in each sulfinamide substituent is bound to at least one hydrogen atom.
- 8. The array of claim 7, wherein each sulfinamide substituent has the same chiral configuration.
- 9. The array of claim 7, wherein each sulfinamide substituent is selected from the group consisting of substituents X-XV and their enantiomers:
- 10. The array of claim 1, wherein the
- 11. The array of claim 1, wherein the conductor surface is selected from the group consisting of a metal surface, a metal oxide surface, and a graphite surface.
- 12. The array of claim 1, wherein the semiconductor surface is a silicon surface.
- 13. The array of claim 1, wherein the semiconductor surface is a doped semiconductor surface.
- 14. A single one molecule wide columnar stack formed on one of a conductor and semiconductor surface, wherein the columnar stack comprises a plurality of substituted aromatic rings, and the aromatic rings of each columnar stack lie about parallel to the surface, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings.
- 15. The columnar stack of claim 14, wherein the stack is a one-dimensional conductor having conductance in a direction about perpendicular to the surface.
- 16. The columnar stack of claim 14, wherein the columnar stack is chiral.
- 17. The columnar stack of claim 14, wherein the aromatic rings are not covalently bound to each other.
- 18. The columnar stack of claim 14, wherein the semiconductor surface is a doped semiconductor surface.
- 19. A method for the preparation of a three-dimensional molecular array on one of a conductor and semiconductor surface, the method comprising:
(a) coating onto the surface a surface template compound comprising substituted aromatic rings to form a surface template molecular monolayer; and (b) coating onto the surface template monolayer a second compound comprising substituted aromatic rings to form at least one columnar stack comprising the substituted aromatic rings of the second compound, wherein the aromatic rings of each columnar stack and of the surface template molecules lie about parallel to the surface, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings.
- 20. The method of claim 19, wherein the surface template compound comprising substituted aromatic rings and the second compound comprising substituted aromatic rings are identical.
- 21. The method of claim 19, wherein the array is a one-dimensional conductor having conductance in a direction about perpendicular to the surface.
- 22. The method of claim 19, wherein the columnar stack is chiral.
- 23. The method of claim 19, wherein the aromatic rings are not covalently bound to each other.
- 24. The method of claim 19, wherein the semiconductor surface is a doped semiconductor surface.
- 25. A method for the preparation of at least one of a piezoelectric, ferroelectric, pyroelectric, and non-linear optical device on one of a conductor and semiconductor surface, comprising:
(a) coating a surface template compound comprising substituted aromatic rings onto the surface to form a surface template molecular monolayer; (b) rinsing and drying the surface; (c) coating onto the monolayer a second compound comprising substituted aromatic rings to form a second layer comprising at least one columnar stack of the aromatic rings of the second compound, wherein the aromatic rings of each columnar stack and of the surface template molecules lie about parallel to the surface, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings; and (d) evaporating onto the second layer another conductive layer so as to provide another conducting surface in contact with the second layer.
- 26. A method for the preparation of a one-dimensional conductor on one of a conductor and semiconductor surface, the one-dimensional conductor having conductance in a direction about perpendicular to the surface, the method comprising
(a) providing a solution of a compound comprising a substituted aromatic ring; (b) providing two electrodes having about parallel surfaces in contact with the solution, wherein each electrode is one of a conductor and a semiconductor; and (c) applying an electric potential between the electrodes, thereby forming a plurality of columnar stacks each comprising a plurality of substituted aromatic rings, wherein the aromatic rings of each columnar stack lie about parallel to the surface of each electrode, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings, and wherein each one of the stacks has a respective dipole moment aligned between the two electrodes.
- 27. A method for the preparation of a one-dimensional conductor, the one-dimensional conductor having conductance in a direction about perpendicular to the surface, the method comprising
(a) providing a solution of a compound comprising a substituted aromatic ring; (b) coating a surface template hydrogen bond donor compound onto a first one of a conductor and a semiconductor surface to form a first molecular monolayer; (c) coating a surface template hydrogen bond acceptor compound onto a second one of a conductor and a semiconductor surface to form a second molecular monolayer; and (d) contacting the first and second surfaces with the solution, wherein the first and second molecular monolayer are about parallel and face each other, thereby forming a plurality of columnar stacks each comprising a plurality of substituted aromatic rings, wherein the aromatic rings of each columnar stack lie about parallel to the first one of the conductor and semiconductor surface and about parallel to the second one of the conductor and semiconductor surface, and the columnar stack comprises a plurality of hydrogen bonds between substituents of different rings, and wherein each one of the stacks has a respective dipole moment aligned between the two surfaces.
- 28. A compound comprising an aromatic ring, the aromatic ring comprising an n-dodecyloxy substituent in each of the 2, 4, and 6 positions of the ring and a second substituent in each of the 1, 3, and 5 positions of the ring, wherein the second substituent is selected from the group consisting of a carboxylic group and a group having the structural formula
- 29. The compound of claim 28, wherein the second substituent is selected from the group consisting of structures I-IX:
- 30. A compound comprising an aromatic ring, the aromatic ring comprising a sulfinamide substituent in each of the 1, 3, and 5 positions of the ring, wherein the nitrogen atom in each sulfinamide substituent is bound to at least one hydrogen atom.
- 31. The compound of claim 30, wherein each sulfinamide substituent has the same chiral configuration.
- 32. The compound of claim 30, wherein the sulfinamide substituent is selected from the group consisting of structures X-XV and their enantiomers:
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority from U.S. Provisional Application Ser. No. 60/244,320, filed Oct. 30, 2000.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/US01/48479 |
10/30/2001 |
WO |
|