Information
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Patent Application
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20070219338
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Publication Number
20070219338
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Date Filed
March 13, 200717 years ago
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Date Published
September 20, 200716 years ago
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Inventors
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Original Assignees
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CPC
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US Classifications
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International Classifications
Abstract
A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a Mw of up to 20,000 is provided. When a polymer comprising hydroxystyrene units is used in the form of a block copolymer or a blend with another polymer, the material is capable of self-assembling to form a pattern of microdomain structure having a size of up to 20 nm that is difficult to achieve with prior art block copolymers.
Claims
- 1. A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a weight average molecular weight of up to 20,000, the material self-assembling to form a pattern of microdomain structure having a size of up to 20 nm.
- 2. The self-assembling polymer film material of claim 1, wherein the hydroxystyrene units have the general formula
- 3. The self-assembling polymer film material of claim 1, wherein the polymer is a block copolymer comprising recurring units having the general formula (1):
- 4. The self-assembling polymer film material of claim 1, wherein the polymer is a triblock copolymer comprising recurring units having the general formula (1):
- 5. The self-assembling polymer film material of claim 1, wherein the polymer is a di- or tri-block copolymer comprising recurring units having the general formula (1):
- 6. The self-assembling polymer film material of claim 1, wherein the polymer is a di- or tri-block copolymer comprising recurring units having the general formula (1):
- 7. A self-assembling polymer film material comprising
a polymer comprising recurring units having the general formula (1):
- 8. A pattern formed by self-assembly of the self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a weight average molecular weight of up to 20,000, said pattern and having a microdomain structure with a size of up to 20 nm.
- 9. The pattern of claim 8, wherein the size is up to 10 nm.
- 10. A pattern forming method comprising etching the pattern of claim 8, for removing part from the microdomain structure to form a nanostructure.
- 11. The pattern of claim 8, wherein the polymer further comprises recurring units having the general fornnda (2)
- 12. The pattern of claim 8, wherein the polymer further comprises recurnug units having the general formula (3):
Priority Claims (1)
Number |
Date |
Country |
Kind |
2006-069055 |
Mar 2006 |
JP |
national |