Self-assembling polymer film material, self-assembled pattern, and pattern forming method

Abstract
A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a Mw of up to 20,000 is provided. When a polymer comprising hydroxystyrene units is used in the form of a block copolymer or a blend with another polymer, the material is capable of self-assembling to form a pattern of microdomain structure having a size of up to 20 nm that is difficult to achieve with prior art block copolymers.
Description
Claims
  • 1. A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a weight average molecular weight of up to 20,000, the material self-assembling to form a pattern of microdomain structure having a size of up to 20 nm.
  • 2. The self-assembling polymer film material of claim 1, wherein the hydroxystyrene units have the general formula
  • 3. The self-assembling polymer film material of claim 1, wherein the polymer is a block copolymer comprising recurring units having the general formula (1):
  • 4. The self-assembling polymer film material of claim 1, wherein the polymer is a triblock copolymer comprising recurring units having the general formula (1):
  • 5. The self-assembling polymer film material of claim 1, wherein the polymer is a di- or tri-block copolymer comprising recurring units having the general formula (1):
  • 6. The self-assembling polymer film material of claim 1, wherein the polymer is a di- or tri-block copolymer comprising recurring units having the general formula (1):
  • 7. A self-assembling polymer film material comprising a polymer comprising recurring units having the general formula (1):
  • 8. A pattern formed by self-assembly of the self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a weight average molecular weight of up to 20,000, said pattern and having a microdomain structure with a size of up to 20 nm.
  • 9. The pattern of claim 8, wherein the size is up to 10 nm.
  • 10. A pattern forming method comprising etching the pattern of claim 8, for removing part from the microdomain structure to form a nanostructure.
  • 11. The pattern of claim 8, wherein the polymer further comprises recurring units having the general fornnda (2)
  • 12. The pattern of claim 8, wherein the polymer further comprises recurnug units having the general formula (3):
Priority Claims (1)
Number Date Country Kind
2006-069055 Mar 2006 JP national