The present invention relates to a self-driving circuit for a DC/DC converter of low voltage, high current, and high power density.
With the rapid development of high technologies, such as, communications, remote sensing, electronic computers, and electronic instrument, the requirement of power supplies of such electronic equipment has increased accordingly. DC/DC converter of low voltage, high current, and high power density is the core technology of the power supplies for supper integrated circuits and high-speed central processors. To meet high efficiency and high power density requirement, the auxiliary (secondary) side of such DC/DC converter shall use synchronous rectifying transistor MOSFET in place of Schottky diode for rectification in order to reduce power loss. However, for a synchronous rectifying MOSFET, the gate thereof needs a corresponding drive circuit to stimulate. In order to avoid cross-conductive losses, the requirement of timing of the drive circuit is high. The existing drive circuits utilize external driving technology, but its control is too complicated and the cost is high.
a shows a demagnetized forward stimulating circuit of three windings. The voltage waveform of its secondary side is shown in
At present, there are two self-driving circuits that can drive the SR2 of
Therefore, the object of the present invention is to solve the existing problem of self-driving technology of the commonly used main circuit of the DC/DC converter of low voltage and high current, and to provide a self-driving circuit that enables minimizing the cross-conductive loss and backward recovery loss, simplifying the structure, and reducing the cost.
The present invention is realized by the following technical embodiment. In the self-driving circuit of the DC/DC converter of the present invention, the rectification portion of the converter comprises synchronous rectifying MOS transistors (SR1) and (SR2), wherein the self-driving circuit is composed of a resister (Ra), a capacitor (Ca), a transistor (Qa) and the diode (Da). The resister (Ra) and the capacitor (Ca) are connected in parallel. An end of the parallel connection is connected with the positive end of the winding (Ns), and the other end thereof is connected with the base of the transistor (Qa). The emitter of the transistor (Qa) is connected with the source of the MOS transistor (SR1), while its collector is connected with the cathode of the diode (Da) and the gate of the MOS transistor (SR2). The anode of the diode (Da) is connected with the negative terminal of the winding (Ns), and its cathode is connected with the gate of the MOS transistor (SR2).
In the other self-driving circuit of the DC/DC converter of the present invention, the rectification portion of the converter comprises synchronous rectifying MOS transistors (SR1) and (SR2), wherein the self-driving circuit is composed of a resister (Ra), a diode (Da), a small power MOS transistor (Sa), a time delay driving circuit, and an isolating differential circuit. The anode of the diode Da is connected with the negative end of the winding Ns and the drain of the synchronous transistor (SR1), and its cathode is connected to the gate of the synchronous rectifying MOS transistor (SR1) and the drain of the small power transistor Sa through the resistor (Ra). An end of the delay driving circuit is connected with an end of the isolating differential circuit, and the other end of the isolating differential circuit is connected with the gate of the small power transistor Sa.
The isolating differential circuit may be composed of the resistance of the windings Npa and Nsa of the transformer, two capacitors, two resisters, and a diode. The resistance of the winding Nsa is connected with the parallel-connected resisters and diode through the capacitors.
The time delay driving circuit is composed of a delay circuit and a driving circuit, wherein an example of the delay circuit is formed by connecting the diode and resister in parallel, and then connected to a ground capacitor in serial.
The MOS transistor (SR2) turns off before the resister (SR1) turns on.
The DC/DC converter is a demagnetized forward converter of three windings (Nc, Np, Ns). The negative end of the winding Np is connected with the drain of the power MOS transistor (S). An end of the delay driving circuit is connected with an end of the isolating differential circuit, and the other end is connected to the gate of the power MOS transistor (S).
The DC/DC converter is a forward converter of resonant clamping. The winding Np and the capacitor (Cc) are connected in parallel, and the n connected with the drain end of the power MOS transistor (S). An end of the delay driving circuit is connected with an end of the isolating differential circuit, and the other end is connected to the gate of the power MOS transistor (S).
The DC/DC converter is a double forward converter of diode clamping. The positive end of the winding (Np) is connected with the source of the power MOS transistor (S1), and the negative end of the winding (Np) is connected with the drain of the power MOS transistor (S2). The anode of the diode (D) is connected with the negative end of the winding (Np), and the cathode is connected with the drain end of the power MOS transistor (S1). The cathode of the diode D2 is connected with the positive end of the winding (Np), and the anode is connected with the source end of the power MOS transistor (S2). An end of the delay driving circuit is connected with an end of the isolating differential circuit, and the other end is connected, respectively, with the gate of the power MOS transistor (S1) and the gate of the power MOS transistor (S2).
The DC/DC converter is a double forward converter of resonance clamping. The positive end of the winding (Np) is connected with the source of the power MOS transistor (S1), and the negative end of the winding (Np) is connected with the drain end of the power MOS transistor (S2). The capacitor (Cc) and the winding (Np) are connected in parallel; the two ends thereof are, respectively, connected with positive and negative ends of the winding (Np). An end of the time delay driving circuit is connected with an end of the isolating differential circuit, and the other end is connected, respectively, with the gates of the power MOS transistors (S1), (S2).
The advantages of the present invention are as follows: for the first circuit, it ensures the conduction of the continuous current SR during the dead interval through the addition of the accelerate circuit and careful selection of Ra, Ca, Qa, and the resistance of the resisters connected in serial at its gate, and at the same time, it maintains the minimum cross-conductive loss and high converting efficiency.
The following embodiments will be discussed in conjunction with the accompanying drawings.
a is a normal demagnetized forward converter circuit of three windings;
b is the waveform of the secondary side voltage of the above circuit;
a is a known self-driving circuit;
b is another known self-driving circuit;
a is the first self-driving circuit of the present invention;
b is the second self-driving circuit of the present invention;
a is an embodiment of a resonant clamping forward converter using the first self-driving circuit;
b is an embodiment of a resonant clamping forward converter using the second self-driving circuit;
a is an embodiment of a diode clamping double forward converter using the first self-driving circuit;
b is an embodiment of a diode clamping double forward converter using the second self-driving circuit;
a is an embodiment of a resonant clamping double forward converter using the first self-driving circuit;
b is an embodiment of a resonant clamping double forward converter using the second self-driving circuit;
a shows a typical waveform of the converter using the converter of FIG. 4(a); and
b shows a typical waveform of the converter using the converter of FIG. 4(b).
FIG. 4(a) illustrates the first embodiment of self-driving circuit of the present invention used in the demagnetized forward stimulating circuit of three windings. It is a non-isolating self-driving circuit, and is a drive circuit for SR2, that is composed of a diode Da, a resister Ra, a capacitor Ca, transistor Qa. The circuit winding of the transformer Np and Ns are connected through the like ends, and the rectifying MOS transistor is composed of SR1 and SR2.
In the embodiment of the first circuit, when t=t1, the main switch S turns off, Dc, and generates a value of demagnetizing voltage-second with the auxiliary winding Nc. The waveform of the secondary side voltage changes from positive to negative, VgsR1 decreases. After its voltage passes the zero, SR1 turns off, and VgSR2 increases because of the turning-on of Da. Before reaching the starting voltage, the body diode will turn on first. At t=t2, the transformer has been completely demagnetized, the voltage of the secondary side reduces to zero, and the diode Da turns off. Thus, the gate voltage VgSR2 of SR2 maintains at Vin/N because there is no discharging path so that SR2 sustains continuous current. When t=Ts, the main switch S turns on again, the secondary side voltage changes from zero to Vin/N. This causes the transistor Qa to turn on faster than SR1 due to the accelerate circuit formed of Ra, Ca so as to ensure the rapid discharge of the gate voltage of SR2. Through careful selection of Ra, Ca, Qa and the resistance of the serial connected resisters at its gate, it may reduce dramatically the cross-conductive loss, and increase the efficiency of the converter.
Due to the storage time of the Qa when turning off, the parameters of Ra and Ca can hardly properly determined when the frequency is relatively high. Accordingly, for this technology, the switching frequency is preferably lower than 250 KHz.
b illustrates the second embodiment circuit of the present invention used in a demagnetized forward stimulating circuit of three windings. In this embodiment, it utilizes a small power MOSFET, a set of an isolating differential circuit and a time delay circuit to accomplish the function of Ra, Ca, Qa of the first circuit. The structure is as follows: the anode of the diode Da is connected to the negative end of the winding Ns and the drain end of the synchronous rectifying MOS transistor (SR1), and the cathode is connected, through the resister (Ra), with the gate of the synchronous rectifying MOS transistor (SR1) and the drain end of the small power transistor Sa. An end of the delay driving circuit is connected with an end of the isolating differential circuit, and the other end is connected to the gate of the small power transistor Sa. Turning-on of SR2 is the same as that in
The isolating differential circuit may be composed of the windings Npa and Nsa of the transformer, two capacitors, two resisters and a diode. The winding Nsa is connected, through the capacitors, to the parallel-connected resisters and diode.
The time delay driving circuit is constructed by a delay circuit and a driving circuit. As an example of the delay circuit, the diode and the resister can be connected parallel, and then connected in serial with the ground capacitor.
The function of the delay circuit is to enable that SR2 turns off before SR1 turns on, and to control the optimum time delay so as to maximize the efficiency of the converter. This converter does not have any restriction to the frequency of switch. The size of all of the components is relatively small.
The two self-driving circuits of the present invention disclosed herein have been proved through experiments. The first circuit has been used in a DC/DC power supply (using resonant clamping forward circuit) of direct current input of 40-60 V and direct current output of 2.5V/50V. The efficiency of the power stage reaches over 90%. The second circuit has been used in a DC/DC power supply (using resonant clamping forward converting circuit) of direct current input of 37-72 V and direct current output of 5V/30V. The efficiency of the power stage exceeds 90%.
In the various applications in
The present invention has been explained above through the embodiments. However, the present invention is not limited thereto. Any improvement and substitution should be viewed within the scope of the protection of the present invention provided that they are not apart from the spirits and contents of the present invention.
Number | Date | Country | Kind |
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99126693 A | Dec 1999 | CN | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCTCN00/00412 | 1/11/2000 | WO | 00 | 6/26/2002 |
Publishing Document | Publishing Date | Country | Kind |
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WO0148902 | 7/5/2001 | WO | A |
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Number | Date | Country |
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0 954 088 | Nov 1999 | EP |