Patent Application
20060170333
This application is based on and incorporates herein by reference Japanese patent application No. 2005-22550 filed on Jan. 31, 2005.
The present invention relates to a self-luminous display device including an emission pixel formed by inserting an emission unit between a pair of electrodes.
Among various display devices such as a CRT, a LCD, a PDP (plasma display panel), and an EL (electroluminescence) display, a self-luminous display device such as the PDP and the EL display is superior in quality of displayed images.
However, the self-luminous display device consumes much electric power and it is necessary to lower its power consumption in order to reduce its negative influence to the environment and its running cost. In particular, necessity for reducing the power consumption increases as the size of the display device becomes larger.
Here, the necessity for reducing the power consumption is described in view of an emission mechanism of the self-luminous display device, with reference to an inorganic EL display device shown in
As shown in
The insulating layers 30, 50 and the emission layer 40 are electrically capacitive loads. When alternating voltage is applied between the electrodes 20 and 60a, electric charge is stored by an amount depending on capacitances of the emission layer 40 and the insulating layers 30 and 50.
When the applied voltage exceeds a clamping voltage which depends on composition and film thickness of the emission layer 40 and the insulating layers 30 and 50, the stored charge flows in the emission layer 40 and collides with an emission core of the emission layer 40 to excite the emission core. The excited emission core emits light when its energy level drops to a ground state.
Since the inorganic EL display device is a capacitive load, electric current is generated with intensity depending on the capacitances of the emission layer 40 and the insulating layers 30 and 50, in storing and discharging the electric charge. In addition, the electric current is generated when the emission layer 40 emits the light in the emission mechanism described above. Therefore, the power consumption of the inorganic EL display increases as a display area becomes larger, because the capacitances of the elements 30, 40 and 50 increase as the display area becomes larger.
Therefore, in order to make the inorganic EL display achieve a large display area, a low operating voltage and a high brightness, it is necessary to reduce the power consumption. The necessity of reducing the power consumption is not specific to the inorganic EL display and is common to the self-luminous display device.
It is therefore an object of the present invention to achieve low power consumption in a self-luminous display device including an emission pixel formed by inserting an emission unit between a pair of electrodes.
A self-luminous display device according to the present invention includes an emission pixel formed by inserting an emission unit between a pair of electrodes, and holes are opened and arranged in a predetermined pattern in at least one of the electrodes.
By arranging the open holes regularly in at least one of the electrodes, the total area of the emission pixel is decreased. Decreasing of the total area of the emission pixel also lowers a capacitance of the emission pixel. Therefore, power consumption of the self-luminous display device is reduced.
Positions corresponding to the holes do not emit light, because voltage is not applied to the positions. The positions, however, look like emitting the light because the light emitted at a vicinity of each of the holes is scattered by asperity of the emission unit.
Therefore, the low power consumption is properly achieved in the self-luminous display device including the emission pixel formed by sandwiching the emission unit between a pair of electrodes.
The electrodes and the emission unit can be disposed to form a plurality of emission pixels arranged in a segment displaying pattern, or can be disposed to form a plurality of emission pixels arranged in a dot-matrix displaying pattern.
The invention, together with additional objective, features and advantages thereof, will be best understood from the following description, the appended claims and the accompanying drawings. In the drawings:
Hereafter, an embodiment of the present invention is described with reference to
As shown in
First electrodes 20 are formed on the glass substrate 10 as lower electrodes under an emission layer 40. Each of the first electrodes 20 is optically transparent and can be made of, for example, an ITO (indium-tin oxide) film or a zinc oxide film. In this embodiment, each of the first electrodes 20 is made of the ITO film.
A first insulator layer 30 is formed on the first electrodes 20. The first insulator layer 30 may be made of, for example, a tantalum pentoxide (Ta2O5) film or an ATO film (Al2O3/TiO2 laminated film) which is a laminated film of Al2O3 and TiO2. In this embodiment, the first insulator layer 30 is made of the Al2O3/TiO2 laminated film.
An emission layer 40 is formed on the first insulator layer 30 as an emission unit, which is mainly made of inorganic EL material. The emission layer 40 is made of, for example, a II-VI compound semiconductor to which an emission core, for example, rare earth element is added.
The II-VI compound semiconductor is a compound of material (like Ca, Sr, Zn, and Cd) belonging to the group IIA or IIB of the old-fashioned periodic system (the group 2 or 12 of the current periodic system) and material (like O and S) belonging to the group VIB of the old-fashioned periodic system (the group 16 of the current periodic system).
Specifically, the emission layer 40 may be made of a base material composed of at least one of the ZnS, SrS, and CaS, and the emission core like manganese (Mn) element or rare earth element (e.g. terbium (Tb) and samarium) in the base material. In this embodiment, the emission layer 40 is constructed with a film made of a zinc sulfide and manganese (ZnS:Mn) compound in which the base material is composed of ZnS and the emission core is composed of Mn.
Surface roughness Ra of the emission layer 40 may be equal to or larger than 10 nm. The surface roughness Ra is defined by JIS (Japanese Industrial Standards).
A second insulator layer 50 is formed on the emission layer 40. The second insulator layer 50 may be made of, for example, an ATO film or a tantalum pentoxide film which are described above. In this embodiment, the second insulator layer 50 is made of the Al2O3/TiO2 laminated film.
Second electrodes 60 are formed on the second insulator layer 50 as upper electrodes above the emission layer 40. Each of the second electrodes 60 is optically transparent and may be made of, for example, an ITO (indium-tin oxide) film or a zinc oxide film. In this embodiment, each of the second electrodes 60 is made of the ITO film and has a thickness of about 200 nm.
Each of emission pixels 70 operated as a display area includes a portion of the first electrodes 20 and a portion of the second electrodes 60 which overlap each other, and further includes portions of the first insulator layer 30, the emission layer 40, and the second insulator layer 50 sandwiched between the overlapping portions of the first and second electrodes 20 and 60.
In this embodiment, the first electrodes 20 are arranged to form a first group of stripes, whereas the second electrodes 60 are arranged to form a second group of stripes which are perpendicular to the stripes belonging to the first group. Therefore, the emission pixels 70, each of which includes an overlapped portion of the first electrodes 20 and the second electrodes 60, are arranged in a reticular pattern. In other words, the emission pixels 70 are arranged in a dot matrix displaying pattern.
The emission pixels 70 can emit light when electric voltage is applied between the first electrodes 20 and the second electrodes 60. As described above, the inorganic EL display device 100 includes the emission pixels 70 formed by sandwiching the emission layer 40 as an emission unit between the first electrodes 20 and the second electrodes 60.
In this embodiment, since the first and second electrodes 20 and 60 are optically transparent, the emitted light can be received from both the sides of the glass substrate 10 and the second electrode 60 of the inorganic EL display device 100.
As shown in
In
As shown in
Every open size of the holes 61 may be equal to or smaller than 50 μm, and may be equal to or smaller than 20 μm. An average open size of the holes 61 may be smaller than 50 μm, and may be smaller than 20 μm.
A total area of the emission pixels 70 excluding the areas of the holes 61 may be equal to or more than 25% of a total area of the emission pixels 70 including the areas of the holes 61.
Each of the holes 61 may have a shape of a circle or a polygon. The open size of each hole 61 can be measured in a normal manner. For example, the open size is a diameter of each hole 61 if the hole 61 has a circular shape, and is a diagonal length of each hole 61 if the hole 61 has a polygonal shape. The holes 61 do not need to be arranged in a manner shown in
Next, a manufacturing method for the inorganic EL display device 100 according to the embodiment is described.
First, the optically transparent ITO films as the first electrodes 20 are formed on the glass substrate 10 by using a sputter technique. The first electrodes 20 may be formed as a pattern by photolithography and etching.
Next, the Al2O3/TiO2 laminated film as the first insulator layer 30 is formed on the first electrodes 20 by using an ALD (Atomic Layer Deposition) method. Specifically, a method for forming the Al2O3/TiO2 laminated film includes steps as follows.
In the first step, an Al2O3 sub-layer is formed by the ALD method, using aluminum trichloride (AlCl3) as ingredient gas for aluminum (Al) and water (H2O) as ingredient gas for oxygen (O).
In the ALD method, the ingredient gas for the aluminum and the ingredient gas for the oxygen are alternately supplied, in order to form the sub-layer by stacking piece by piece sub-films each having thickness of a single atom. In this case, the AlCl3 gas is introduced into a reactor by means of Ar carrier gas made of argon (Ar) for one second and subsequently gas in the reactor is purged for a period sufficient for discharging the AlCl3 gas in the reactor.
Next, the H2O gas is likewise introduced into the reactor by means of the Ar carrier gas for one second and subsequently gas in the reactor is purged for a period sufficient for discharging the H2O gas in the reactor. By repeating a cycle of introducing the AlCl3 gas and the H2O gas, the Al2O3 sub-layer with a predetermined thickness is formed.
In the second step, a titanium dioxide sub-layer is formed by the ALD method, using titanium tetrachloride (TiCl4) as ingredient gas for titanium (Ti) and water (H2O) as ingredient gas for oxygen (O).
Specifically, in a similar manner to the first step, the TiCl4 gas is introduced into the reactor by means of the Ar carrier gas for one second and subsequently the gas in the reactor is purged for a period sufficient for discharging the TiCl4 gas in the reactor. Next, the H2O gas is likewise introduced into the reactor by means of the Ar carrier gas for one second and subsequently the gas in the reactor is purged for a period sufficient for discharging the H2O gas in the reactor. By repeating a cycle of introducing the TiCl4 gas and the H2O gas, the titanium dioxide sub-layer with a predetermined thickness is formed.
By repeating the first step and the second step alternately, the Al2O3/TiO2 laminated film is formed as the first insulator layer 30. The thickness of each of the Al2O3 sub-layers and the TiO2 sub-layers formed by the process may be 5 nm. Each of the numbers of the Al2O3 sub-layers and the TiO2 sub-layers in the first insulator layer 30 may be thirty.
The first sub-layer and the last sub-layer of the Al2O3/TiO2 laminated film may be an Al2O3 sub-layer or a TiO2 sub-layer. The first (bottom) sub-layer closest to the first electrodes 20 may be the Al2O3 sub-layer.
When a film having a thickness corresponding to a size of an atom is formed by using the ALD method, the film does not function as an insulator layer if sub-layers in the film are thinner than 0.5 nm, whereas voltage resistance effect due to a laminated structure is relatively reduced if the sub-layers in the film is thicker than 20 nm. Therefore, it is preferable that the thickness of sub-layers in the laminated film is within a range from 0.5 nm to 20 nm, more preferably, within a range from 1 nm to 10 nm.
Next, on the first insulator layer 30, the emission layer 40 is formed, by using an evaporation method. That is, as the emission layer 40, a film is formed by the evaporation method using the zinc sulfide and the manganese (ZnS:Mn) compound in which the base material is composed of the ZnS and the emission core is composed of Mn.
Subsequently, the second insulator layer 50 is formed on the emission layer 40 to have the same structure and thickness as the first insulator layer 30. Finally, the ITO film is formed on the second insulator layer 50 as the second electrodes 60 in the same manner as the first electrodes 20.
The second electrodes 60 can be formed to have a predetermined pattern by photolithography and etching. The holes 61 can be formed simply by modifying a pattern of a mask used in this photolithography from a stripe pattern for the second electrodes 60 to a pattern for the holes 61. Therefore, additional manufacturing process is unnecessary for the holes 61. Thus, the inorganic EL display device 100 can be formed through the above steps.
Since the second electrodes 60 are arranged regularly (in a matrix pattern in
Light is not emitted from positions corresponding to the holes 61, because voltage is not applied to the positions. The positions, however, look like emitting light because light emitted at a vicinity of each of the holes 61 is scattered by asperity of the emission layer 40.
Therefore, the low power consumption is properly achieved in the inorganic EL display device 100 including the emission pixels 70 formed by sandwiching the emission layer 40 between the first and second electrodes 20 and 60.
According to studies of inventors, in the case that the open sizes of the holes 61 are equal to or smaller than 50 μm, contrast is small between an unremitting portion of the emission pixels 70 which is not emitting light and an emitting portion of the emission pixels 70 which is emitting light. Therefore, it is hard to recognize the holes 61.
Relative emission brightness in
As shown in
According to studies of the inventors, in the case that the open size of the hole 61 becomes larger than 100 μm, the contrast becomes significant between the emitting portion of the emission pixels 70 and the unremitting portion of the emission pixels 70, and the hole 61 can be recognized with naked eyes.
In contrast, in the case that the open size of the hole 61 is smaller than 50 μm, the contrast becomes small and the hole 61 cannot be recognized with naked eyes. Therefore, it is not necessary to consider, in manufacturing of the inorganic EL display device 100, visual effects originating from the existence of the hole 61.
As shown in
In the case that the total area of the emission pixels 70 excluding the areas of the holes 61 is more than 25% of the total area of the emission pixels 70 including the areas of the holes 61, the emission brightness of the inorganic EL display device 100 is hardly reduced regardless of the number of the holes 61.
This can be seen in
Here, the smaller this area ratio becomes, the more the number of the holes 60 in the emission pixels 70 becomes. In
As shown in
As described above, each of the emission pixels 70 is formed as a portion of the inorganic EL display device 100 where one of the first electrodes 20 and one of the second electrodes 60 arranged in a striping pattern intersect with each other. In addition, the emission pixels 70 can be arranged in a dot matrix displaying pattern.
In the inorganic EL display device, when the surface roughness Ra of the emission layer 40 is larger than 10 nm, the emission brightness is hardly changed.
This can be seen in
As shown in
It is considered that this comes from the fact that a degree of scattering of the light at the holes 61 becomes smaller as the surface roughness Ra becomes smaller. In the case that the average surface roughness Ra of the emission layer 40 is larger than 10 nm, the total area of the emission pixels 70 can be reduced without substantially reducing the emission brightness of the emission pixels 70, thereby the amount of the power consumption of the emission pixels 70 can be reduced.
The present invention should not be limited to the embodiment discussed above and shown in the figures, but may be implemented in various ways without departing from the spirit of the invention.
For example, holes penetrating in a thickness direction of the inorganic EL display device 100, such as the holes 61 on second electrodes 60 in the above embodiment, may be formed in the first electrodes 20. These holes may be formed in both the first electrodes 20 and the second electrodes 60.
The holes 61 may be arranged, for example, in a zigzag pattern, a spiral pattern, or a concentric pattern. The holes 61 are needed to be arranged regularly in a predetermined pattern. Thus, the holes 61 formed in the electrodes 20, 60 in the present invention are clearly different from pinholes accidentally formed during a manufacturing process.
In the inorganic EL display device 100 shown in
One of the first electrode 20 and the second electrode 60 in an emission pixel 70 may be optically opaque. In the case that one of the electrodes 20 and 60 is optically transparent and the other one is optically opaque, the light can be seen only through the transparent electrode 20 or 60.
The emission pixels 70 may be arranged in a segment displaying pattern. In this case, a character (such as a numeral “3” or a numeral “8”) is expressed by a combination of multiple segments, each of which corresponds to an emission pixel. In the segment displaying pattern, the multiple segments are aligned along a line drawing (such as a numeral “8”) in which one or more numeral can be fitted.
The first electrodes 20, the first insulator layer 30, the emission layer 40, the second insulator layer 50, and the second electrodes 60 may have different structures from the above embodiments.
The self-luminous display device of the present invention is not limited to be used for the inorganic EL display device 100 described in the above embodiment. The self-luminous display device may be implemented as a plasma display device or an organic EL display.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2005-22550 | Jan 2005 | JP | national |
