Claims
- 1. A method for determining the intrinsic charge density property of a semi-insulating material comprising the steps of:
insulating said material from electrical conduction; injecting charge into said insulated material over a time period from an initial application of maximum charge transfer to a substantially lesser transfer rate; detecting the current represented by the transfer of said charge injected into said material; determining the integral of the current over said time period.
- 2. The method of claim 1 further including the step of applying blocking layers over first and second surfaces of said material to provide said insulation.
- 3. The method of claim 2 wherein said step of injecting charge includes the step of injecting charge by application of a corona through said blocking layers.
- 4. The method of claim 1 wherein said time period extends until said current is substantially constant in time.
- 5. The method of claim 1 wherein said material is selected from the group consisting of print media and charge transport material.
- 6. A method for determining surface charge injection of a semi-insulating material comprising the steps of;
injecting current into said material in two cases where a blocking layer is applied to first one and then the other of each of two surfaces; detecting the current at steady state conditions for said two cases; and determining the surface charge injection for each of said two surfaces from the detected currents.
- 7. The method of claim 6 wherein said material is selected from the group consisting of print media and charge transport material.
- 8. The method of claim 6 wherein said step of injecting charge includes the step of injecting charge by application of a corona through said blocking layers
- 9. A method for determining surface charge injection of a semi-insulating material comprising the steps of;
measuring a steady state current in said material in response to the application of a current; injecting charge into said material in two cases where a blocking layer is applied to first one and then the other of each of two surfaces; detecting the current at steady state conditions for said two cases; and determining the surface charge injection for each of said two surfaces from the measured and detected currents.
- 10. The method of claim 9 wherein said material is selected from the group consisting of print media and charge transport material.
- 11. A method for determining the charge mobility of a semi-insulating material comprising the steps of:
injecting current into a material with insulators on either surface, in each of two polarities; measuring the maximum and steady state current flowing into the material as a function of time; determining mobility from the measured currents.
- 12. The method of claim 11 further including the step of: determining a lower limit for said mobility.
- 13. The method of claim 11 further including the step of:
plotting a curve of calculated steady state current for said injection step against mobility; interpolating between the measured steady state current value and said curve a mobility value.
- 14. The method of claim 11 wherein said material is selected from the group consisting of print media and charge transport material.
- 15. A method for characterizing semi-insulators selected from the group consisting of print media and transport materials comprising the steps of:
applying charge to the material; detecting the current in said material as a result of the applied charge; calculating the mobility of the material as a function of an electric field associated with applying said charge.
- 16. A method for characterizing semi-insulating material for the effects of two or more parameters including surface charge injection, charge mobility, and intrinsic charge density comprising the steps of:
applying charge to the material; measuring the long term current and voltage; determining effective resistance from the long term current and voltage.
- 17. The method of claim 16 wherein said applying step includes the step of applying through at least one blocking layer.
- 18. The method of claim 16 wherein said material is selected from the group consisting of print output media and a latent image transfer layer.
- 19. A method for measuring apparent resistance of a semi-insulating material in a test system comprising the steps of:
applying charge to said material over a plurality of sites at different times; detecting surface voltage on said material at a site a predetermined time after application of said charge at said site; sensing current in said material as a function of applied charge; determining an apparent resistance for said material as a function of said detected voltage and sensed current adjusted for the predetermined time.
- 20. Media for receiving electrophotographically generated images comprising;
image receiving material in the form of a two dimensional layer; said material being selected for use in electrophotographic reproduction based on dielectric relaxation characteristics of said material; said characteristics selected from the group including intrinsic charge density, charge mobility, surface charge injection, and dielectric constant.
- 21. The media of claim 20 wherein said intrinsic charge density is at least approximately 1.0 normalized unit, given by □Vmx/L2.
- 22. The media of claim 20 wherein said surface charge injection, in combination with an electrode placed in proximity to said layer, is at least approximately 0.1 normalized units, given by □□Vmx/L2.
- 23. In an electrophotographic reproduction system a combination of media and system operating parameters that reduces the potential for air gap breakdown adjacent said media by operating outside of the Paschen threshold.
- 24. Media and systems for use in double sided electrophotographic reproduction having parameters for system process time, and media charge density and injection which avoid significant image print through incidents.
- 25. The media and system parameters of claim 24 in which one or more of the criteria of q>2 or s>1 and t>10 are met, all in normalized units.
- 26. A method for characterizing the dielectric relaxation properties of a material comprising the steps of:
applying charge to said material; sensing a response of said material to the applied charge; determining at least one dielectric relaxation property of said material from said sensed response.
- 27. The method of claim 26 wherein said dielectric relaxation property includes one or more of the properties selected from the group of intrinsic charge density, surface charge injection, charge mobility, effective resistance, and apparent resistance.
- 28. The method of claim 27 further including the step of applying said charge from a plasma source.
- 29. The method of claim 28 wherein said material is a semi-insulating material.
- 30. The method of claim 29 wherein said semi-insulating material is selected from the group of materials for use as electrophotographic output media, photoconductive drums or belts, charging rollers, intermediate transfer belts, and development rolls.
- 31. A method for providing a two dimensional output representation of dielectric relaxation properties of a material comprising the steps of:
applying charge to said material; providing output representations of at least one dielectric relaxation property over an area of said material in response to the charge applied to said material.
- 32. The method of claim 31 wherein said charge applying step includes the step of scanning said material with a plasma source.
- 33. The method of claim 32 further including the step of sensing the response of said material over said area to the applied charge as it is scanned;
said providing step responding to said signal.
- 34. The method of claim 31 including the step of
sensing the response of said material to the applied charge with an array of sensors to provide a plurality of output signals; said providing step responding to said plurality of output signals.
- 35. Apparatus for determining the intrinsic charge density property of a semi-insulating material comprising:
insulating layers on said material insulating it from electrical conduction; a charge injector for injecting charge into said insulated material over a time period from an initial application of maximum charge transfer to a substantially lesser transfer rate; a current detector for detecting the current represented by the transfer of said charge injected into said material; a processor for taking the integral of the current over said time period as a representation of said intrinsic charge density.
- 36. The apparatus of claim 35 wherein said layers are blocking layers over first and second surfaces of said material to provide said insulation.
- 37. The apparatus of claim 36 wherein charge injector injects charge by application of a corona through said blocking layers.
- 38. The apparatus of claim 35 wherein said time period extends until said current is substantially unchanged.
- 39. The apparatus of claim 5 wherein said material is selected from the group consisting of print media and charge transport material.
- 40. Apparatus for determining surface charge injection of a semi-insulating material comprising;
a current injector for injecting current into said material in two cases where a blocking layer is applied to first one and then the other of each of two surfaces; a detector for detecting the current at steady state conditions for said two cases; and a processor for determining the surface charge injection for each of said two surfaces from the detected currents.
- 41. The apparatus of claim 40 wherein said material is selected from the group consisting of print media and charge transport material.
- 42. The apparatus of claim 40 further including a corona source for injecting current through said blocking layers.
- 43. Apparatus for determining surface charge injection of a semi-insulating material comprising the steps of;
measuring a steady state current in said material in response to the application of a current; injecting charge into said material in two cases where a blocking layer is applied to first one and then the other of each of two surfaces; detecting the current at steady state conditions for said two cases; and determining the surface charge injection for each of said two surfaces from the measured and detected currents.
- 44. The apparatus of claim 43 wherein said material is selected from the group consisting of print media and charge transport material.
- 45. Apparatus for determining the charge mobility of a semi-insulating material comprising:
a current injector for injecting current into a material through insulators on either surface, in each of two polarities; a sensor measuring the maximum and steady state current flowing into the material as a function of time; a processor determining mobility from the measured currents.
- 46. The apparatus of claim 45 wherein said processor further determines a lower limit for said mobility.
- 47. The apparatus of claim 45 wherein said processor is further operative to provide a calculated steady state current as a function of mobility and operative in response to said measured steady state current and calculated current to provide mobility as an interpolation therebetween.
- 48. The apparatus of claim 45 wherein said material is selected from the group consisting of print media and charge transport material.
- 49. Apparatus for characterizing semi-insulators selected from the group consisting of print media and transport materials comprising:
means for applying charge to the material; means for detecting the current in said material as a result of the applied charge; means for calculating the mobility of the material as a function of an electric field associated with applying said charge.
- 50. Apparatus for characterizing semi-insulating material for the effects of two or more parameters including surface charge injection, charge mobility, and intrinsic charge density comprising the steps of:
means for applying charge to the material; means for measuring the long term current and voltage; means for determining effective resistance from the long term current and voltage.
- 51. The apparatus of claim 50 wherein said material is selected from the group consisting of print output media and a latent image transfer layer.
- 52. Apparatus for measuring apparent resistance of a semi-insulating material in a test system comprising:
means for applying charge to said material over a plurality of sites at different times; means for detecting surface voltage on said material at a site a predetermined time after application of said charge at said site; means for sensing current in said material as a function of applied charge; means for determining an apparent resistance for said material as a function of said detected voltage and sensed current adjusted for the predetermined time.
- 53. Apparatus for characterizing the dielectric relaxation properties of a material comprising:
means for applying charge to said material; means for sensing a response of said material to the applied charge; means determining at least one dielectric relaxation property of said material from said sensed response.
- 54. The apparatus of claim 53 wherein said dielectric relaxation property includes one or more of the properties selected from the group of intrinsic charge density, surface charge injection, charge mobility, effective resistance, and apparent resistance.
- 55. The apparatus of claim 54 further including a plasma source for applying said charge.
- 56. The apparatus of claim 55 wherein said material is a semi-insulating material.
- 57. The apparatus of claim 56 wherein said semi-insulating material is selected from the group of materials for use as electrophotographic output media, photoconductive drums or belts, charging rollers, intermediate transfer belts, and development rolls.
- 58. Apparatus for providing a two dimensional output representation of dielectric relaxation properties of a material comprising:
means for applying charge to said material; means for providing output representations of at least one dielectric relaxation property over an area of said material in response to the charge applied to said material.
- 59. The apparatus of claim 58 further including means for scanning said material with a plasma source to apply said charge to said material.
- 60. The apparatus of claim 59 further including means for sensing the response of said material over said area to the applied charge as it is scanned;
said providing means responding to said signal.
- 61. The apparatus of claim 58 including:
means for sensing the response of said material to the applied charge with an array of sensors to provide a plurality of output signals; said providing means responding to said plurality of output signals.
- 62. The apparatus of claim 50 wherein said applying step includes the step of applying through at least one blocking layer.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| PCT/US00/12728 |
May 2000 |
US |
|
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority of U.S. Provisional Patent Application No. 60/159,857 Entitled: SEMI-INSULATING MATERIAL TESTING AND OPTIMIZATION incorporated herein by reference filed Oct. 15, 1999; U.S. Provisional Patent Application No. 60/192,203 Entitled: DIELECTRIC RELAXATION ANALYSIS SYSTEM incorporated herein by reference filed Mar. 27, 2000; and U.S. PCT International Application No. PCT/US00/12728 incorporated herein by reference filed May 10, 2000.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60159857 |
Oct 1999 |
US |
|
60192203 |
Mar 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
| Parent |
PCT/US00/28644 |
Oct 2000 |
US |
| Child |
10121436 |
Apr 2002 |
US |