Claims
- 1. A process for fabricating bodies of a semiconductive ceramic material with a voltage-dependent nonlinear resistance, which comprises providing a mixture of 100 mole parts of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 in finely divided form, where x is a numeral from about 0.01 to about 0.50, from about 0.01 to about 3.00 mole parts of at least one metal oxide in finely divided form selected from the group consisting of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11 and Dy.sub.2 O.sub.3, and an organic binder, forming the mixture into moldings of desired shape and size, firing the moldings in a temperature range from about 1300.degree. C. to about 1500.degree. C. in a nonoxidative atmosphere, refiring thee moldings in a temperature range from about 850.degree. C. to about 1350.degree. C. in an oxidative atmosphere to complete ceramic bodies, and adding from about 0.02 to about 2.50 mole parts of Na.sub.2 O to the ceramic bodies not later than the refiring of the moldings.
- 2. A process as defined in claim 1, wherein the Na.sub.2 O is included in the initially provided mixture in the form of at least one sodium compound in finely divided form.
- 3. A process as defined in claim 1, wherein the Na.sub.2 O is thermally diffused in the moldings by forming a layer of at least one sodium compound on each molding after the firing thereof and then by refiring the moldings together with the layers of the sodium compound thereon.
- 4. A process as defined in claim 2 or 3, wherein the sodium compound is selected from the group consisting of Na.sub.2 O and NaF.
- 5. A process as defined in claim 3, wherein the moldings together with the layers of the sodium compound thereon are refired in a temperature range from about 900.degree. C. to about 1300.degree. C.
- 6. A process as defined in claim 1, 2 or 3, wherein the mixture further comprises from about 0.01 to about 3.00 mole parts of at least one oxide in finely divided form selected from the group consisting of Ag.sub.2 O, CuO, MnO.sub.2 and SiO.sub.2.
- 7. A process as defined in claim 6, wherein the mixture further comprises from about 0.01 to about 1.50 mole parts of Al.sub.2 O.sub.3 in finely divided form.
- 8. A process as defined in claim 1, 2 or 3, wherein the mixture further comprises from about 0.01 to about 1.50 mole parts of Al.sub.2 O.sub.3 in finely divided form.
Priority Claims (1)
Number |
Date |
Country |
Kind |
56-18959 |
Nov 1981 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 441,219 filed Nov. 12, 1982 now U.S. Pat. No. 4,438,214 issued Mar. 20, 1984.
US Referenced Citations (3)
Foreign Referenced Citations (1)
Number |
Date |
Country |
81105268.7 |
Jul 1981 |
EPX |
Non-Patent Literature Citations (1)
Entry |
U.S. Serial Number 280,801 filed Jul. 6, 1981. |
Divisions (1)
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Number |
Date |
Country |
Parent |
441219 |
Nov 1982 |
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