Patent Grant
12038406
Electronic devices and components have found numerous applications in chemistry and biology (more generally, “life sciences”), especially for detection and measurement of various chemical and biological reactions and identification, detection and measurement of various compounds. One such electronic device is referred to as an ion-sensitive field effect transistor, often denoted in the relevant literature as an “ISFET” (or pHFET). ISFETs conventionally have been explored, primarily in the academic and research community, to facilitate measurement of the hydrogen ion concentration of a solution (commonly denoted as “pH”).
More specifically, an ISFET is an impedance transformation device that operates in a manner similar to that of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and is particularly configured to selectively measure ion activity in a solution (e.g., hydrogen ions in the solution are “analytes”). A detailed theory of operation of an ISFET is given in “Thirty years of ISFETOLOGY: what happened in the past 30 years and what may happen in the next 30 years,” P. Bergveld, Sens. Actuators, 88 (2003), pp. 1-20 (“Bergveld”), which publication is hereby incorporated herein by reference in its entirety.
Details of fabricating an ISFET using a conventional Complementary Metal Oxide Semiconductor (CMOS) process may be found in Rothberg, et al., U.S. Patent Publication No. 2010/0301398, Rothberg, et al., U.S. Patent Publication No. 2010/0282617, and Rothberg et al., U.S. Patent Publication 2009/0026082; these patent publications are collectively referred to as “Rothberg,” and are all incorporated herein by reference in their entireties. In addition to CMOS, bipolar and CMOS (biCMOS) processing may be used, such as a process that would include a p-channel MOS FET array with bipolar structures on the periphery. Alternatively, other technologies may be employed where a sensing element can be made with a three-terminal devices in which a sensed ion leads to the development of a signal that controls one of the three terminals; such technologies may also include, for example, Gallium Arenides (GaAs) and carbon nanotube technologies.
Taking a CMOS example, a P-type ISFET fabrication is based on a p-type silicon substrate, in which an n-type well forms a “body” of the transistor. Highly-doped p-type (p+) source (S) and drain (D) regions, are formed within the n-type well. A highly-doped n-type (n+) region B may also be formed within the n-type well to provide a conductive body (or “bulk”) connection to the n-type well. An oxide layer may be disposed above the source, drain and body connection regions, through which openings are made to provide electrical connections (via electrical conductors) to these regions. A polysilicon gate may be formed above the oxide layer at a location above a region of the n-type well, between the source and the drain. Because it is disposed between the polysilicon gate and the transistor body (i.e., the n-type well), the oxide layer often is referred to as the “gate oxide.”
Like a MOSFET, the operation of an ISFET is based on the modulation of charge concentration (and thus channel conductance) caused by a Metal-Oxide-Semiconductor (MOS) capacitance. This capacitance is constituted by a polysilicon gate, a gate oxide and a region of the well (e.g., n-type well) between the source and the drain. When a negative voltage is applied across the gate and source regions, a channel is created at the interface of the region and the gate oxide by depleting this area of electrons. For an n-well, the channel would be a p-channel. In the case of an n-well, the p-channel would extend between the source and the drain, and electric current is conducted through the p-channel when the gate-source potential is negative enough to attract holes from the source into the channel. The gate-source potential at which the channel begins to conduct current is referred to as the transistor's threshold voltage VTH (the transistor conducts when VGS has an absolute value greater than the threshold voltage VTH). The source is so named because it is the source of the charge carriers (holes for a p-channel) that flow through the channel; similarly, the drain is where the charge carriers leave the channel.
As described in Rothberg, an ISFET may be fabricated with a floating gate structure, formed by coupling a polysilicon gate to multiple metal layers disposed within one or more additional oxide layers disposed above the gate oxide. The floating gate structure is so named because it is electrically isolated from other conductors associated with the ISFET; namely, it is sandwiched between the gate oxide and a passivation layer that is disposed over a metal layer (e.g., top metal layer) of the floating gage.
As further described in Rothberg, the ISFET passivation layer constitutes an ion-sensitive membrane that gives rise to the ion-sensitivity of the device. The presence of analytes such as ions in an analyte solution (i.e., a solution containing analytes (including ions) of interest or being tested for the presence of analytes of interest), in contact with the passivation layer, particularly in a sensitive area that may lie above the floating gate structure, alters the electrical characteristics of the ISFET so as to modulate a current flowing through the channel between the source and the drain of the ISFET. The passivation layer may comprise any one of a variety of different materials to facilitate sensitivity to particular ions; for example, passivation layers comprising silicon nitride or silicon oxynitride, as well as metal oxides such as silicon, aluminum or tantalum oxides, generally provide sensitivity to hydrogen ion concentration (pH) in an analyte solution, whereas passivation layers comprising polyvinyl chloride containing valinomycin provide sensitivity to potassium ion concentration in an analyte solution. Materials suitable for passivation layers and sensitive to other ions such as sodium, silver, iron, bromine, iodine, calcium, and nitrate, for example, are known, and passivation layers may comprise various materials (e.g., metal oxides, metal nitrides, and metal oxynitrides). Regarding the chemical reactions at the analyte solution/passivation layer interface, the surface of a given material employed for the passivation layer of the ISFET may include chemical groups that may donate protons to or accept protons from the analyte solution, leaving at any given time negatively charged, positively charged, and neutral sites on the surface of the passivation layer at the interface with the analyte solution.
With respect to ion sensitivity, an electric potential difference, commonly referred to as a “surface potential,” arises at the solid/liquid interface of the passivation layer and the analyte solution as a function of the ion concentration in the sensitive area due to a chemical reaction (e.g., usually involving the dissociation of oxide surface groups by the ions in the analyte solution in proximity to the sensitive area). This surface potential in turn affects the threshold voltage of the ISFET; thus, it is the threshold voltage of the ISFET that varies with changes in ion concentration in the analyte solution in proximity to the sensitive area. As described in Rothberg, since the threshold voltage VTH of the ISFET is sensitive to ion concentration, the source voltage VS provides a signal that is directly related to the ion concentration in the analyte solution in proximity to the sensitive area of the ISFET.
Arrays of chemically-sensitive FETs (“chemFETs”), or more specifically ISFETs, may be used for monitoring reactions—including, for example, nucleic acid (e.g., DNA) sequencing reactions, based on monitoring analytes present, generated or used during a reaction. More generally, arrays including large arrays of chemFETs may be employed to detect and measure static and/or dynamic amounts or concentrations of a variety of analytes (e.g., hydrogen ions, other ions, non-ionic molecules or compounds, etc.) in a variety of chemical and/or biological processes (e.g., biological or chemical reactions, cell or tissue cultures or monitoring, neural activity, nucleic acid sequencing, etc.) in which valuable information may be obtained based on such analyte measurements. Such chemFET arrays may be employed in methods that detect analytes and/or methods that monitor biological or chemical processes via changes in charge at the chemFET surface. Such use of chemFET (or ISFET) arrays involves detection of analytes in solution and/or detection of change in charge bound to the chemFET surface (e.g. ISFET passivation layer).
Research concerning ISFET array fabrication is reported in the publications “A large transistor-based sensor array chip for direct extracellular imaging,” M. J. Milgrew, M. O. Riehle, and D. R. S. Cumming, Sensors and Actuators, B: Chemical, 111-112, (2005), pp. 347-353, and “The development of scalable sensor arrays using standard CMOS technology,” M. J. Milgrew, P. A. Hammond, and D. R. S. Cumming, Sensors and Actuators, B: Chemical, 103, (2004), pp. 37-42, which publications are incorporated herein by reference and collectively referred to hereafter as “Milgrew et al.” Descriptions of fabricating and using ChemFET or ISFET arrays for chemical detection, including detection of ions in connection with DNA sequencing, are contained in Rothberg. More specifically, Rothberg describes using a chemFET array (in particular ISFETs) for sequencing a nucleic acid involving incorporation of known nucleotides into a plurality of identical nucleic acids in a reaction chamber in contact with or capacitively coupled to the chemFET, wherein the nucleic acids are bound to a single bead in the reaction chamber, and detecting a signal at the chemFET, wherein detection of the signal indicates release of one or more hydrogen ions resulting from incorporation of the known nucleotide triphosphate into the synthesized nucleic acid.
However, with the scaling of ISFET sensor array designs, more and more ISFET sensors are packed on a chip. Thus, there is a need in the art to provide a readout scheme to output measured data from a chip at a high speed.
A floating gate (FG) transistor may be used to detect ions in close proximity to the gate electrode. The transistor may be configured with other transistors to form a pixel that can be placed into an array for addressable readout. In the simplest form, the ancillary transistors are used solely to isolate and select the floating gate transistor for readout in an array. The floating gate transistor may be a chemically-sensitive transistor, and more specifically, a chemically-sensitive field effect transistor (ChemFET). The ChemFET may be designed with a metal-oxide-semiconductor field-effect transistor (MOSFET) containing self-aligned source and drain implants fabricated using standard complementary metal-oxide-semiconductor (CMOS) processing. The ChemFET may be an ion sensitive FET (ISFET), and may be a PMOS or an NMOS device.
A floating gate (FG) transistor may be used to detect ions in close proximity to the gate electrode. The transistor may be configured with other transistors to form a pixel that can be placed into an array for addressable readout. In the simplest form, the ancillary transistors are used solely to isolate and select the floating gate transistor for readout in an array. The floating gate transistor may be a chemically-sensitive transistor, and more specifically, a chemically-sensitive field effect transistor (ChemFET). The ChemFET may be designed with a metal-oxide-semiconductor field-effect transistor (MOSFET) containing self-aligned source and drain implants fabricated using standard complementary metal-oxide-semiconductor (CMOS) processing. The ChemFET may be an ion sensitive FET (ISFET), and may be a PMOS or an NMOS device.
To reduce the pixel size to the smallest dimensions and simplest form of operation, the ancillary transistors may be eliminated to form an ion sensitive field-effect transistor (ISFET) using one transistor. This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Parasitic overlap capacitance between terminals of the transistor limits the gain. The capacitance ratios also allow consistent pixel-to-pixel gain matching and relatively constant current operation which justifies the use of a row selection line which can sink the necessary current without causing unacceptable variation. Derivatives of this allow for increased programmable gain through a cascoded transistor enabled during readout. Configurable pixels can be created to allow both common source read out as well as source follower read out.
In a one-transistor pixel array, such as the one shown in
In one embodiment, the 1T ion pixel 100 may work by boot-strapping the row selection line R to the floating gate G while at the same time providing a source of current for the column line bias. In the simplest form, this bootstrapping occurs without adding any extra capacitors. The gate to drain overlap capacitance Cgd, as shown in
The operation of this pixel depends on the fact that the signal range of any given pixel is small compared to the supply voltage or read range of the source follower. For example, the useful signal range may be only 100 mV and the supply voltage may be 3.3V. When a row is selected, the R line is driven to an active high voltage VH, while all other row lines are held at an active low voltage VL. The voltage VL is selected to be approximately equal to the nominal voltage on the column line C during the readout of any given pixel. Because the signal range is small, this voltage is known to within 100 mV in this example. Therefore, the drain to source voltage of all inactive pixels is always held to small values. This point is only critical if the gate to source voltage of inactive pixels is near the threshold of the device. For the row driven to VH, the FG voltages for that row are significantly higher than the other rows because of the bootstrapping that occurs when the row line transitions to VH. After the column line switch Sb is open, the final value on the column line will be determined almost entirely by the active row because the circuit operates according to the winner take-all mode.
There are two sources of current from other rows that can distort the signal value (one that adds current and one that takes away current) and there must be enough bootstrapping available to successfully read pixels without significant interaction from the other rows that produce these sources. The analysis to determine how much bootstrapping is needed is as follows. By the time the pixel is sampled, the device has entered the subthreshold region of operation which has a transconductance slope, for example, of approximately 100 mV/decade. This means that for every 100 mV of change in gate voltage, the current changes by 10 times. In order to effectively read a single pixel, a criteria is set so that 99% of the current on the column line is attributable to the active row and only 1% is attributable to the inactive rows (distortion current). From here it can be determined how much bootstrapping is necessary. With only 2 rows in the pixel array, a 200 mV difference in the floating gate voltages is needed according to the subthreshold slope. Since a signal range of about 100 mV is also needed to be accounted for, the total requirement is about 300 mV. If there are 10 rows, there may be 10 times more contribution from inactive rows. Therefore an extra 100 mV is needed. If the array is increased to 100 rows, another 100 mV is needed. If the array is increased to 10{circumflex over ( )}n rows, 300+100*n mV is needed. As an example, a 10000 (10{circumflex over ( )}4) row pixel array only requires a total of 700 mV (300+100*4) of bootstrapping. This amount of bootstrapping can be achieved from the overlap capacitance of the gate and drain. If more capacitance is needed, extra coupling can be facilitated in the mask layout. The above analysis only applies to pixels contributing to the readout current.
Pixels can also take current away from the column line and sink it through the deactivated row lines. Since the deactivated row line is set to approximately the level of the column line, this current draw will be minimal but it must still be quantified and controlled. To accomplish this, the final current on the column line should not be allowed to diminish beyond a certain level. This is ensured by loading the column with a small current sink such as 1 uA. For a W/L (width to length) ratio of 1, a transistor biased at its threshold will have a saturation current of about 0.1 uA. This current decreases by a factor of 10 for every 100 mV of reduction in gate to source voltage. If less than 1% contribution of current is required, the VGS of inactive pixels needs to be kept to 100+100*n mV below the threshold voltage where 10{circumflex over ( )}n is the number of pixels in the row. Thus, for a 10000 row pixel array, VGS needs to be kept to 500 mV below threshold. A typical 3.3V NMOS transistor has a VT of 600 mV. Therefore, VGS should be less than 100 mV for inactive pixels. Assuming that the FG has a nominal voltage of 0V when the row (R) and column (C) lines are at 0V, this condition is met even as R and C couple to the FG. If the FG has a larger nominal voltage than 0V (for example, due to the trapped charge), more bootstrapping is necessary to cause the column line to reach a level within 100 mV of the FG. As long as the nominal FG voltage is sufficiently low, the second criteria for minimizing distortion current is not a limiting factor. Finally, enough bootstrapping is needed to produce a current on the column line that matches the bleeding current so that the pixel can produce a measurable voltage on the column line. If VG is nominally 0v, then 700 mV is needed for bootstrapping. Therefore, for an NMOS with VT as large as 600 mV, the amount of bootstrapping required is simply limited by the VT. In order to readout the pixel with margin, a good target for bootstrapping is 1V. This leaves 300 mV of range for variation. Achieving 1V of bootstrapping is practical within a 3.3V supply.
All the current from the column readout is distributed through the row line. This causes significant droop in the voltage of the row line if the column current is also significant. The voltage droop affects the bootstrapping level but is not detrimental to the readout of the source follower because variation in drain voltage has only a second order effect. Since pixels are read out with multiple samples, offsets are canceled such that the droop does not affect the sensitivity of the pixels.
It should be noted that the same layout can be used for both source follower readout and common source readout as long as optimizations are not made for either. Only accommodations that need to be made are in the column circuits. This makes for a flexible readout architecture and either readout method may be used depending on the necessary signal range. If the signal needs a high gain, the common source mode should be used. Otherwise, the source follower mode may be used.
The following analysis is given for the gain of the source follower readout. Referring to
In one embodiment, the present invention obtains voltage gain by reading out with the common source configuration. It is desirable to achieve both a reduction in pixel size as well as an increase in signal level. The present invention eliminates the ancillary transistors in other pixel designs (e.g., 2T and 3T discussed below) and uses the source of the ISFET as the selection line to achieve both of these goals. The common source mode is a gain mode and a current mode.
The schematic of an array of pixels with column readout switches according to one embodiment of the present invention is shown in
The pixel array can be loaded with a current source with finite output resistance or another load device such as a resistor. Normally the row selection lines will be held at an active high voltage VH. When a row is selected for readout, its row selection line is pulled low to VL. The value of VL is set such that the nominal current level is about 1 uA. If the FG has a value of 100 mV higher than the norm, 10 times this current will result on the column line. If the value of FG is 100 mV lower than the norm, the current will be 10 times lower. The settling time of the signal on the column line will be signal dependent. The voltage gain is achieved with the selection of the value of R and it can be configurable to achieve programmable gain. For example, if R is 100 k ohms, then the 100 mV, translates to 1V at the output.
The actual circuit is more complicated than just a simple common source amplifier because of the parasitic capacitance involved. Since the FG node is not driven, but rather capacitively coupled to the output, there is a feedback mechanism that limits the gain. This limit is roughly equal to the total capacitance at the FG node to the gate to drain capacitance. This ratio may be about 3. It could be designed to achieve higher gain such as 10 times with careful mask operations to reduce source and drain extensions.
The overlap capacitance created by the LDD regions can be reduced by skipping the LDD implants at the drain for the device.
In the 1T pixel shown in
The pixel in common source readout configuration is shown in
Since A is large compared to the loop gain, the negative input terminal may be considered as a virtual ground node and the gain of the circuit may be determined as Vo/Vi=−Cc/Cgd. Since this ratio is known from the analysis or measured values of the source follower configuration, the gain may be determined to be about 6.5. However compared to the source follower, the gain is Vo/Vi=2/(Asf−G). In this example, a gain of 10 is realized over the source follower configuration. A lower bound on this gain is given by assuming that the input capacitance of the source follower is solely due to Cgd and that the Asf is equal to 1. In this case the gain is about 3. Since neither of these conditions is realistic, the gain is expected to always exceed this number. Thus, if the gain of the source follower configuration of a pixel is known, the gain of the common source configuration of this pixel is also known. In addition, the higher the gain, the more sensitive the pixel is. This makes the common source configuration preferable.
Flicker noise can be reduced by using a channel doping of the same type as the minority carrier. For example, an NMOS with a n-type implant produces a buried channel transistor. To shift the workfunction of the device, a P+ gate electrode can be used.
One derivative of the one-transistor pixel allows for increased programmable gain through a cascoded transistor enabled during readout.
Since the gain of the common source readout is limited by the Cgd capacitance, as shown in
Higher gain and variable gain may be produced in the 1T configuration by bringing the cascode device outside the pixel to the column line.
In this case, the cascode forces the drain of the pixel to remain at a fairly steady voltage over the range of inputs. This causes the pixel to push nearly all of the change in current through the cascode device at the base of the array and into the current load. This reduces the negative feedback from Cds, which would otherwise limit the gain. Given that the current load has infinite output resistance and there is effectively no coupling capacitor to the FG node, the gain of the pixel is now −(gm1rO1+1)gm2rO2, wherein gm1 is the transconductance of the cascode device at the base of the column line and gm2 is the transconductance of the pixel and rO1 and rO2 are the small signal output resistances as seen at the drain. The value of the output resistance is determined by channel length modulation. Longer gate lengths produce higher output resistance because the effect of channel length modulation is minimized. Since this gain is so large, it can be limited and configured by variation of the current source output resistance, which is shown as Radj in
Various layout choices can be made to implement a 1 T and 2T transistor. In order to reduce the size of the pixel the source and drains of adjacent pixels can be shared. In this way a single row selection line enables 2 rows at a time. This reduces the row wiring: two columns are then read out at once for a given column pitch. Such a scheme is shown in
In one embodiment, the cascoded device is gain-enhanced with a differential amplifier in feedback to control a transistor that maintains a constant voltage on the column line.
In a pixel array, a row selection device may be used for selection and isolation. When a row selection line is activated, the row selection device (a MOSFET) forms a channel due to the gate voltage exceeding a threshold voltage and acts like a switch. When the row selection is deactivated, the channel is diminished. It is important to note that a row selection device never really completely turns “on” or “off”. It only approximates a switch. When the gate is substantially lower than the source of the row selection transistor, good isolation is achieved and the pixel with the active row selection can be read effectively without input from deactivated pixels. With many rows in an array of pixels, it is necessary to achieve a given level of isolation for each row selection device. That is, the requirements for the row selection device depend on the number of rows.
Both ISFET 1101 and the row selection device 1102 are shown as NMOS, but other types of transistors may be used as well. The 2T pixel 1100 is configured as the source follower readout mode, although 2T pixels may be configured as the common source readout mode.
In
In
In
In
The right column, including a pixel consisting of 1405RS and 1405IS, a pixel consisting of 1406RS and 1406IS, a pixel consisting of 1407RS and 1407IS, and a pixel consisting of 1408RS and 140815, is coupled to column traces cb[2], ct[1], and cb[3] in substantially the same manner as described above.
The pixel array 1400 has high density because of continuous diffusion, shared contacts, mirrored pixels, and one ct (column top) line and 2 cb (column bottom) line per physical column. A global bulk contact may be implemented by using a P+ wafer with P− epitaxy region.
The arrangement of pixel array 1400 provides for high speed operation. Row lines rs[0] and rs[1] are selected together and readout through cb[0] and cb[1]. This leads to a 4 times faster readout due to twice the number of pixels enabled for a single readout and half the parasitic load of a continuous array, allowing each column to settle twice as fast. In an embodiment, the full array is separated into a top half and a bottom half. This leads to another 4 times faster readout time due to twice the number of pixels readout at a time (both out the top and the bottom) and half the parasitic load of a continuous array. Thus, the total increase in speed over a single row selected continuous array is 16 times.
In an embodiment, both top and bottom halves of the pixel array may be enabled at the same time during readout. This can allow a multiplexing of readout between the top half and the bottom half. For example, one half can be doing a “wash” (e.g., flushing out reactants from the wells over the pixel devices) and the other half can be performing the readout. Once the other half is read, the readout for the two halves is switched.
In an embodiment, a 2T pixel design can incorporate two chemically-sensitive transistors (e.g., ISFETs) rather than one chemically-sensitive transistor and one row select device as described with respect to
In one embodiment, a column circuit allows column lines to be swapped to a sampling circuit such that either source-side or drain-side row selection can be made in either source follower mode or common source mode.
One or more charge pumps may be used to amplify the output voltage from a chemically-sensitive pixel that comprises one or more transistors, such as those described above.
One or more charge pumps may be used to amplify the output voltage from a chemically-sensitive pixel that comprises one or more transistors, such as those described above.
At time t0, all switches are off.
At time t1, φ1 switches 1501, 1502, 1503 and 1504 are turned on. The track phase may start. An input voltage Vin, which may be from an ion sensitive pixel, may start to charge capacitors 1507 and 1508.
At time t2, φ1 switches 1501, 1502, 1503 and 1504 are turned off, and capacitors 1507 and 1508 are charged to Vin−Vref1.
At time t3, φ2 switches 1505 and 1506 are turned on, while φ1 switches 1501, 1502, 1503 and 1504 remain off. The boost phase may start. The capacitor 1507 may start to discharge through the capacitor 1508. Since the capacitors are in parallel during the track phase and in series during the boost phase, and the total capacitance is halved during the boost phase while the total charge remains fixed, the voltage over the total capacitance must double, making Vout approximately two times Vin.
A source follower SF may be used to decouple the gain circuit from the following stage.
The charge pump 1500 may provide a two times gain without a noisy amplifier to provide a virtual ground.
At time t0, all switches are off.
At time t1, φ1 switches 1501, 1502, 1503, 1504, 1601 and 1602 are turned on. The track phase may start. An input voltage Vin, which may be from an ion sensitive pixel, may start to charge capacitors 1507, 1508 and 1604.
At time t2, φ1 switches 1501, 1502, 1503, 1504, 1601 and 1602 are turned off, and capacitors 1507, 1508 and 1604 are charged to Vin−Vref1.
At time t3, φ2 switches 1505 and 1603 are turned on, while φ1 switches 1501, 1502, 1503, 1504, 1601 and 1602 remain off. The boost phase may start. The capacitor 1507 may start to discharge through the capacitors 1508 and 1604, and the capacitor 1508 may start to discharge through the capacitor 1604. Since the capacitors are in parallel during the track phase and in series during the boost phase, and the total capacitance is divided by three during the boost phase while the total charge remains fixed, the voltage over the total capacitance must triple, making Vout approximately three times Vin.
Additional series charge pumps can be added to increase the gain further. In a multi-stage charge pump, the capacitor values do not have to be the same size from stage to stage. It can be observed that the total area consumed by capacitors increases with the square of the gain. Although this feature may, in some cases, be undesirable with respect to area usage, power consumption, and throughput, the charge pump can be used without these penalties when the total noise produced by the ion sensitive pixel and associated fluidic noise is larger than the charge pump KT/C noise when a reasonable capacitor size is used.
At time t1, all switches are off.
At time t1, a switch φsp is on, providing an input voltage Vin to the input of the charge pump 1500.
From time t2 to time t5, the charge pump 1500 operates to push the output voltage Vout to 2(Vin−Vref1), as described before with reference to
From time t6 to t7, the switch φfb is on, feeding the output voltage 2(Vin−Vref1). back to the input of the charge pump 1500, and the first cycle ends.
During the second cycle, the charge pump 1500 amplifies the output voltage by 2(2(Vin−Vref1)). The process repeats, with the output being amplified during each cycle.
An ion sensitive MOS electrode is charge coupled to adjacent electrodes to facilitate both confinement and isolation of carriers. Measurements of ion concentration are made by discrete charge packets produced at each pixel and confined by potential barriers and wells. The ion sensitive electrode can act as either a barrier level or as a potential well. Working in the charge domain provides several benefits, including but not limited to: 1) increased signal level and improved signal to noise through the accumulation of multiple charge packets within each pixel, 2) better threshold matching of the MOS sensing and reference structures, 3) reduction in flicker noise, and 4) global-snap shot operation.
A floating electrode is used to detect ions in close proximity to the electrode. The electrode is charge coupled to other electrodes and to other transistors to form a pixel that can be placed into an array for addressable readout. It is possible to obtain gain by accumulating charge into another electrode or onto a floating diffusion (FD) node or directly onto the column line. It is desirable to achieve both a reduction in pixel size as well as increase in signal level. To reduce pixel size, ancillary transistors may be eliminated and a charge storage node with certain activation and deactivation sequences may be used.
The ion sensitive (IS) accumulation pixel contains some of the following concepts:
The basic IS accumulation pixel is shown in
The basic charge accumulation scheme is shown in
In alternative embodiments, the order of electrodes may be switched, and/or the IS electrode may be used as the barrier rather than the well. Transistors may be added to this accumulation line to enable a large array of pixels. The ancillary transistors are used to increase speed. However, it should be noted that no transistors are necessary to enable a full pixel array of the accumulation line. Instead, an array can be partitioned such that no transistors are needed. In an embodiment, the FD nodes are connected to the column line. Before a pixel is read out, the column line is reset to VDD. Then a row is selected by accumulating charge for that row directly onto the column line. After many cycles, the column discharges to a value directly proportional to the ion concentration. Since the capacitance of the column line depends on the total number of rows, the amount of accumulation required, depends on the number of rows. The array can be partitioned into sub arrays to make timing scalable. For example, every 100 rows can contain a local source follower buffer that is then connected to a global array. This hierarchical approach can be used in general with all readout schemes to make massive arrays of pixels with fast readout.
Due to the thermal activity of carriers, charge packets cannot be generated without noise. Each fill and spill operation produces charge error proportional to KTC (thermal noise in the floating diffusion capacitor), where C is equal to Cox times the area of the ion sensitive electrode. During the fill operation charge can flow freely between the source of electrons and the confinement well. However, during the spill operation, the device enters the subthreshold mode and carriers move by diffusion, mainly in only one direction, which results in half of the thermal noise of a resistive channel. The total noise in electrons for each charge packet is therefore sqrt(KTC/2)/q where q represents the charge of one electron in coulombs (1.6×10e-19). The signal in electrons is equal to VC/q. The signal to noise ratio after n cycles is equal to V*sqrt(2nC/KT). Note that the signal to noise ratio improves by the square root of the number of cycles of accumulation. For small signal levels, the amount of accumulation will be limited to the threshold mismatch between the VR reference electrode and the ion sensitive electrode. Since there is a reference electrode in every pixel and the electrodes are charge coupled, the relative threshold mismatch between each pair of electrodes is small. Assuming, this difference is about 1 mV, over 1000 accumulation cycles should be feasible, thereby improving the signal to noise by more than 30 times. By way of example, if the signal is 1 mV and the electrode area is 1 square micron with Cox=5 fF/um{circumflex over ( )}2, the signal to noise ratio after 1000 cycles is 50 to 1. Since the signal level then reaches 1 V, it is expected that no other noise source is relevant. For clarity, the dominant noise is simply the charge packet thermal noise which is well known.
Several design permutations are available depending on the desired mode of operation. The CCD channels are surface mode and are built in standard CMOS technology preferably below 0.13 um. Extra implants can be added to avoid surface trapping and other defects. A channel stop and channel can be formed from donor and acceptor impurity implants. The channel can be made of multiple implants to produce a potential profile optimal for the mode of operation.
The sample and hold circuit 2901 may include a switch SH, a switch CAL, a capacitor Csh, and an amplifier Amp. The switch SH's input is coupled to the output of the column buffer 2903, and its output is coupled to a voltage VREF through the switch CAL, the upper part of the capacitor Csh, and the input of the amplifier Amp. The amplifier is biased by a voltage VB2. The output of the amplifier is coupled to a switch 2904 controlled by a signal ColSeln from a column selection shift register. The output of the switch 2904 is buffered by an output buffer 2905 before reaching the output terminal Vout. The output buffer is biased by a voltage VB3.
The described embodiments may provide a chemical detection circuit with an improved signal-to-noise ratio. The chemical detection circuit may include a current source, a chemical detection pixel, an amplifier and a capacitor. The chemical detection pixel may comprise a chemically-sensitive transistor that may have first and second terminals and a row-select switch connected between the current source and chemically-sensitive transistor. The amplifier may have a first input and a second input, with the first input connected to an output of the chemically-sensitive transistor via a switch and the second input connected to an offset voltage. The capacitor may be connected between an output of the amplifier and the first input of the amplifier. The capacitor and amplifier may form an integrator and may be shared by a column of chemical detection pixels.
Some embodiments may also provide a chemical detection circuit with an improved signal-to-noise ratio. The chemical detection circuit may include a plurality of columns of chemical detection pixels. Each column of chemical detection pixels may comprise a current source, a plurality of chemical detection pixels, an amplifier and a capacitor. Each chemical detection pixel may comprise a chemical-sensitive transistor that may have first and second terminals and a row-select switch connected between the current source and chemically-sensitive transistor. The amplifier may have a first input and a second input, with the first input connected to an output of each chemically-sensitive transistor via a switch and the second input connected to an offset voltage. The capacitor may be connected between an output of the amplifier and the first input of the amplifier. The capacitor and amplifier may form an integrator that is shared by a column of chemical detection pixels.
Other embodiments may provide a method to generate an output signal from a chemical detection circuit. The method may comprise selecting a chemical detection pixel from a column of chemical detection pixels for readout, integrating a readout current from the chemical detection pixel to an integrator, and reading out an output voltage of the integrator.
Each chemically-sensitive transistor may have a gate terminal that may be covered by a passivation layer. The gate terminal may have a floating gate structure sandwiched between a gate oxide and a passivation layer (e.g., floating gate G in
In one embodiment, the chemical detection circuit 3300 may be configured so that each of the chemically-sensitive transistors (e.g., 3304.1, . . . , or 3304.N) may work in a current-mode. That is, each of the chemically-sensitive transistors may work as a transconductance amplifier. The ion-concentration of analyte being measured by the chemically-sensitive transistor may be detected by a current output. In one embodiment, each chemically-sensitive transistor 3304.1 to 3304.N may be an ion-sensitive field effect transistor (ISFET) and each row-select switch 3306.1 to 3306.N may also be a transistor.
During operation, when one chemical detection pixel is selected, the corresponding row-select switch may be closed. For example, as shown in
Each measurement operation may comprise two phases. The first phase of operation may be an integration phase and the second phase of operation may be a clear phase to clear charges. During the first phase of operation, the switch 3318 may be closed and switches 3316 and 3320 may be left open. After the output signal Vout is read out, the operation may enter the second phase, during which the switches 3316 and 3320 may be closed and the switch 3318 may be left open to clear out the charges accumulated on the capacitor Cint 3312. In one embodiment, a correlated-double-sampling (CDS) scheme may be implemented by closing switch 3320 during the second phase. This may allow the inherent offset voltage of the amplifier 3310 to be stored on the capacitor Cint 3312.
In one embodiment, the current source 3308 may be a programmable current source attached to each column to provide a DC bias current Idc, which may be relatively large. In this configuration, the bias current Idc will not integrate onto the capacitor Cint 3312 and thus the integrator may avoid premature saturation. Amplification level may be derived from the Cint value and duration of integration.
Further, in one embodiment, the output signal Vout may be converted into a digital signal by an ADC. For example, the charging signal current Isig may be digitized using a single-slope integration ADC such that a counter may increment (counting a number) until the integrator output voltage crosses some threshold as defined by a comparator. When the single-slope integration ADC is used, calibration may be performed to determine an absolute value of the capacitor Cint 3312. Alternatively, a “dual-slope integrating ADC” may be used that uses a fixed integration period followed by a variable discharge period. In other embodiments, the output signal Vout may be converted into a digital signal by other known analog-to-digital conversion techniques.
In one embodiment, integration of current response of the chemically-sensitive transistor may provide a better signal-to-noise ratio (SNR) than measurement of instantaneous voltage output of a chemically-sensitive transistor.
In one or more embodiments, it may be hard to completely cancel the DC current of the chemical sensitive transistor using the current source 3308. Therefore, in one embodiment, the size of the capacitor may be limited to a certain size. In another embodiment, the duration of integration time may be limited to, for example, 1 μs. If the integration time is limited, a dual-slope ADC with a much slower discharge phase may be used to convert the output voltage Vout to a digital output.
Each chemically-sensitive transistor 3404.1˜3404.N may have a gate structure similar to that of the chemically-sensitive transistor 3302.1˜3302.N. Each chemically-sensitive transistor 3404.1˜3404.N may further have a first terminal connected to a first side of a respective row-select switch 3406.1˜3406.N and a first side of a respective output switch 3422.1˜3422.N. Each chemically-sensitive transistor 3404.1˜3404.N may also have a second terminal connected to ground. For example, as shown in
In one embodiment, the chemical detection circuit 3400 may be configured that each of the chemically-sensitive transistors (e.g., 3404.1, . . . , or 3404.N) may work in a voltage-mode. That is, during operation, each of the chemically-sensitive transistors may work as a voltage amplifier. The ion concentration of analyte being measured by the chemically-sensitive transistor may be detected by a voltage level at the output. When one chemical detection pixel is selected, the corresponding row-select and output switches may be closed. The offset voltage Vset may set an appropriate voltage between the virtual ground (e.g., the first terminal or negative terminal) of the amplifier 3410 and the output of the selected chemically-sensitive transistor. For example, as shown in
Similar to operation of the chemical detection circuit 3300, the operation of the chemical detection circuit 3400 may have an integration phase and a clear phase to clear charges. During the integration phase, the switch 3420 may be closed and switches 3416 and 3420 may be left open. After the output signal Vout is read out, the operation may enter the second phase, during which the switches 3416 and 3420 may be closed and the switch 3418 may be left open to clear out the charges accumulated on the capacitor Cint 3412.
In one embodiment, each chemically-sensitive transistor 3404.1 to 3404.N may be an ion-sensitive field effect transistor (ISFET) and each row-select switch 3406.1 to 3406.N may be a transistor. Each output switch 3422.1 to 3422.N may also be a transistor.
Further, similar to the chemical detection circuit 3300, the output signal Vout of the chemical detection circuit 3400 may be converted into a digital signal by an ADC. For example, the charging current Iis may be digitized using a single-slope integration ADC or a dual-slope integrating ADC. In other embodiments, the output signal Vout of the chemical detection circuit 3400 may be converted into a digital signal by other known analog-to-digital (ND) conversion techniques.
Moreover, in one embodiment, the resistance of the resistor 3424 may dominate over the resistance of the series row-select switch (e.g., 3406.1 to 3406.N) to limit the current to be integrated onto the capacitor Cint 3412.
Then the process 3600 may proceed to step 3604. At step 3604, the process 3600 may integrate a readout current from the chemical detection pixel to an integrator. As described above, the readout current may be caused by a voltage change at a gate terminal of the selected chemical detection pixel. In one embodiment, as shown in
Then, at step 3506, the process 3600 may read out an output voltage of the integrator. As described above, output voltage of the integrator (Vout at the output of the amplifier 3310 or output of the amplifier 3410) may have a better signal-to-noise ratio (SNR) for detection of ion concentration of the analyte being analyzed by the chemical detection pixel than instantaneous voltage measurement.
Although in the above description, the chemically-sensitive transistors may be described as PMOS devices, they may also be implemented as NMOS devices in one embodiment. Further, the switches (e.g., row-selected switches, output switches, charge clear switches) may be implemented in either PMOS or NMOS transistors in an embodiment.
The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second and opposite side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile array may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be connected to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be connected to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.
Some embodiments may also provide a chemical detection system that may comprise a motherboard having at least one central processing unit, an output device coupled to the mother board, and a chemical detection reader board connected to the mother board. The chemical detection reader board may have a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second and opposite side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile array may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be connected to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be connected to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.
Other embodiments may provide a method to read out data from a chemical detection circuit. The method may comprise selecting a first quadrant of a tile to read out data, selecting one group of first columns and one group of second columns, reading out data of the group of first columns from a first set of output pins located at a first side of the chemical detection circuit, reading out data of the group of second columns from a second set of output pins located at a second side of the chemical detection circuit, and repeating selection and data readouts for next groups of first columns and second columns till all remaining columns of the first quadrant are read out.
Pixels of each tile 3702.1-3702.N and 3704.1-3704.N may be divided into four quadrants and data generated at each pixel may be read out from either the top or the bottom. An exemplary configuration of the pixels within a pair of tiles is shown in
Each column may generate an output signal when one row of pixels is selected according to the respective row select register for the quadrant. In one embodiment, each column of a quadrant may be designated as a first or second column (e.g., an odd column or even column), and the output signal may be read from either the top or the bottom output circuits. The columns may be grouped for parallel read out operation. That is, a group of first columns or a group of second columns (n columns, n being an integer larger than one) may be read out together simultaneously in parallel. For example, if n is equal to 8, odd column groups may be columns [1:8], [17:24], [33:40], etc., and even column groups may be [9:16], [25:32], [41:48], etc. The column groups may be connected according to quadrant they are in. For a top left quadrant (e.g., 3802, 3812) odd column groups may be connected to the output circuit at a first side (e.g., top output circuits including the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and output buffer 3840) and even column groups may be connected to the output circuit at a second side (e.g., bottom output circuits including the channel circuit 3822, column multiplexer 3850, output multiplexer 3826 and output buffer 3842). For a top right quadrant (e.g., 3804, 3814) odd column groups may be connected to the output circuit at the first side and even column groups may be connected to the output circuit at the second side. For a bottom left quadrant (e.g., 3806, 3816) odd column groups may be connected to the output circuit at the second side and even column groups may be connected to output circuit at the first side. For a bottom right quadrant (e.g., 3808, 3818) odd column groups may be connected to the output circuit at the second side and even column groups may be connected to the output circuit at the first side.
In one embodiment, a group of first columns and a group of second columns may form a data channel to be read out together simultaneously from either the first or the second side of the output circuits. Each data channel may comprise one group of first columns and one group of second columns located in each quadrant between a first side of output circuits and a second side of output circuits (e.g., n first columns and n second columns from each of TL 3802, BL 3806, BL 3816, TL 3812).
The readout operation may use the row select shift registers (e.g., a vertical shift register) to select rows and column shift registers to select columns (e.g., a horizontal shift register). When the operation starts, switches inside the current sources and swizzles block 3810 may be enabled to provide driving currents to the signal lines, any pixel select lines of an unused flow cell may be disabled, all row and column shift registers may be reset. Then, the vertical shift register may start counting by increments of 1 and the horizontal shift register may start counting by 16. Data for the frame may start with the vertical shift registers selecting row 1 of TL, TR, BL, and BR since reset. In one embodiment, the word “swizzle” may refer to the configuration that a metal line which passes through one column in the top circuitry may be routed in the space between the top and bottom circuitry in such a way that it passes through a different column in the bottom circuitry, as shown below in
The readout operation may start with a TL quadrant (e.g., the TL quadrant 3802). The first group of odd columns (e.g., n first columns [1:8]) in TL 3802 and first group of even columns (e.g., n second columns [9:16]) in TL 3802 may be selected by the horizontal shift registers. Selected odd column pixels in row 1 of TL 3802 may be routed to top outputs through the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and then they may be read out through the top output buffer 3840. At the same time, the selected even column pixels in row 1 of TL may be routed to bottom outputs through the channel circuit 3822, column multiplexer 3850, output multiplexer 3826 and then they may read out through the bottom output buffer 3842.
During the above readout time, the next group of odd pixels (e.g., columns [17:24]) in row 1 of TL 3802 may be connected to the top column multiplexer 3848 and output multiplexer 3824 via the channel circuit 3820. Similarly, the next group of even pixels (e.g., columns [25:32]) in row 1 of TL 3802 may be connected to the bottom column multiplexer 3850 and output multiplexer 3826 via the channel circuit 3822. Then, the top and bottom output multiplexers 3824 and 3826 may switch their respective multiplexers, and subsequently, the next group of odd pixels in row 1 of TL 3802 may be read out through the top outputs, and the next group of even pixels in row 1 of TL 3802 may be read out through the bottom outputs. This may continue until all pixels from row 1 of TL 3802 have been read out. At the end of the read out of row 1, the TL 3802's vertical shift register may shift to the next row, and the outputs may begin to settle.
After row 1 of the TL quadrant 3802 is finished, the readout operation may continue to TR quadrant 3804. A first group of odd columns (e.g., columns [1:8]) in TR quadrant 3804 and a first group of even columns (e.g., columns [9:16]) in TR quadrant 3804 may be selected by the horizontal shift registers. Then the selected first group of odd column pixels in row 1 of TR quadrant 3804 may be routed to top outputs through the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and then they may be read out through the top output buffer 3840. At the same time, the selected first group of even column pixels [9:16] in row 1 of TR 3804 may be routed to bottom outputs through the channel circuit 3822, column multiplexer 3850, output multiplexer 3826 and then they may read out through the bottom output buffer 3842.
During the above readout time, the next group of odd pixels (e.g., columns [17:24]) in row 1 of TR 3804 may be connected to the top column multiplexer 3848 and output multiplexer 3824 via the channel circuit 3820. Similarly, the next group of even pixels (e.g., columns [25:32]) in row 1 of TR 3804 may be connected to the bottom column multiplexer 3850 and output multiplexer 3826 via the channel circuit 3822. Then, the top and bottom output multiplexers 3824 and 3826 may switch their respective multiplexers, and subsequently, the next group of odd pixels in row 1 of TR 3804 may be read out through the top outputs, and the next group of even pixels in row 1 of TR 3804 may be read out through the bottom outputs. This may continue until all pixels from row 1 of TR 3804 have been read out. At the end of the read out of row 1, the TR 3804's vertical shift register may shift to the next row, and the outputs may begin to settle.
After row 1 of the TR quadrant 3804 is finished, the readout operation may continue to BL quadrant 3806. A first group of odd columns (e.g., columns [1:8]) in BL quadrant 3806 and a first group of even columns (e.g., columns [9:16]) in BL quadrant 3806 may be selected by the horizontal shift registers. Then the selected first group of odd column pixels in row 1 of BL quadrant 3806 may be routed to bottom outputs through the channel circuit 3822, column multiplexer 3850, output multiplexer 3826 and then they may read out through the bottom output buffer 3842. At the same time, the selected first group of even column pixels [9:16] in row 1 of BL 3806 may be routed to top outputs through the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and then they may be read out through the top output buffer 3840.
During the above readout time, the next group of odd pixels (e.g., columns [17:24]) in row 1 of BL 3806 may be connected to the bottom column multiplexer 3850 and output multiplexer 3826 via the channel circuit 3822. Similarly, the next group of even pixels (e.g., columns [25:32]) in row 1 of BL 3806 may be connected to the top column multiplexer 3848 and output multiplexer 3824 via the channel circuit 3820. Then, the top and bottom output multiplexers 3824 and 3826 may switch their respective multiplexers, and subsequently, the next group of odd pixels in row 1 of BL 3806 may be read out through the bottom outputs, and the next group of even pixels in row 1 of BL 3806 may be read out through the top outputs. This may continue until all pixels from row 1 of BL 3806 have been read out. At the end of the read out of row 1, the BL 3806's vertical shift register may shift to the next row, and the outputs may begin to settle.
After row 1 of the BL quadrant 3806 is finished, the readout operation may continue to BR quadrant 3808. A first group of odd columns (e.g., columns [1:8]) in BR quadrant 3808 and a first group of even columns (e.g., columns [9:16]) in BR quadrant 3808 may be selected by the horizontal shift registers. Then the selected first group of odd column pixels in row 1 of BR quadrant 3808 may be routed to bottom outputs through the channel circuit 3822, column multiplexer 3850, output multiplexer 3826 and then they may read out through the bottom output buffer 3842. At the same time, the selected first group of even column pixels [9:16] in row 1 of BR quadrant 3808 may be routed to top outputs through the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and then they may be read out through the top output buffer 3840.
During the above readout time, the next group of odd pixels (e.g., columns [17:24]) in row 1 of BR quadrant 3808 may be connected to the bottom column multiplexer 3850 and output multiplexer 3826 via the channel circuit 3822. Similarly, the next group of even pixels (e.g., columns [25:32]) in row 1 of BR quadrant 3808 may be connected to the top column multiplexer 3848 and output multiplexer 3824 via the channel circuit 3820. Then, the top and bottom output multiplexers 3824 and 3826 may switch their respective multiplexers, and subsequently, the next group of odd pixels in row 1 of BR quadrant 3808 may be read out through the bottom outputs, and the next group of even pixels in row 1 of BR quadrant 3808 may be read out through the top outputs. This may continue until all pixels from row 1 of BR quadrant 3808 have been read out. At the end of the read out of row 1, the BR quadrant 3808's vertical shift register may shift to the next row, and the outputs may begin to settle.
After row 1 of all four quadrants are read out, the operation may return to TL, and the pattern may be repeated until all rows in TL, TR, BL, and BR are read out to complete one frame for a tile (e.g., 3702.1). And then, the operation may be carried on in a next tile (e.g., 3702.2). This scheme may allow row n in a quadrant to settle for ¾ of the time that it takes to read out row n from all four quadrants.
In one embodiment, the readout operation may be performed to complete one quadrant at a time. That is, after one row for a quadrant has finished, move on to the next row of the same quadrant; and continue to a next quadrant only after all rows of same the quadrant are finished.
In one embodiment, the tiles at the top slice (e.g., 3702.1˜3702.N) may operate concurrently, and the tiles at the bottom slice may operate alternately with corresponding tiles of the top slice (e.g., 3702.1 and 3704.1 would operate alternately).
During operation, data from the top 2n signal lines may be read out from the channel circuit 3820, column multiplexer 3848, output multiplexer 3824 and output buffer 3840 and the bottom 2n signal lines may be readout from corresponding circuits at the left.
Then the process 4100 may proceed to step 4108. At step 4108, the process 4100 may repeat selection and data readouts for a next group of first columns and a next group of second columns until all remaining columns of the first quadrant are read out. For example, the chemical detection circuit 3700 may repeat the readout operation for odd column groups [17:24], [33:40], etc. and even column groups [25:32], [41:48], etc. for all remaining columns of the first quadrant (e.g., TL quadrant 3802).
Communication external to the analog board reader may be based on a 100 MHz clock signals from a PCIe connector. The 100 MHz clock signals from PCIe connector may be buffered by a PCIe clock buffer 4710. The buffered 100 MHz clock signals may be sent to first and second SerDes PLL (serialization/deserialization phase locked loop) of the FPGA 4714 and may also be sent to a PCIe switch 4712 (e.g., PCIe switch 4316).
In one embodiment, the zero delay buffers 4706.1 and 4706.2 may allow for skew adjustment between ADC sample clocks and data channels of a chemical detector (not shown). The clocks may be differential LVDS where possible, but the clocks for channels of the chemical detector may be differential low-voltage positive emitter-coupled logic (LVPECL). Further, in one embodiment, the combination of ADC and data channel 120 MHz clocks need to be low jitter (e.g., <15 μs—as drawn ˜4.5 rms). In one embodiment, in the case of the analog chemical sensor, the “clock” provided to the sensor may be the “channel increment/decrement signal”—allowing for synchronization of channel switch and sampling by the ADCs.
The described embodiments may provide a chemical detection circuit that may comprise a column of chemically-sensitive pixels. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor and a row selection device. The chemical detection circuit may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit.
Some embodiments may also provide a chemical sensor that may comprise a plurality of columns of chemically-sensitive pixels. Each column may comprise a plurality of chemically-sensitive pixels formed in rows. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor and a row selection device. The chemical sensor may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit.
Other embodiments may provide a method of generating an output signal for a chemical detection circuit. The method may comprise generating a row selection signal by a row decoder of the chemical detection circuit. The chemical detection circuit may have a pixel array that includes a column of chemical detection pixels. Each chemical detection pixel may include a chemically-sensitive transistor and a row selection device. The method may further comprise applying the row selection signal to a respective row selection device of a selected chemical detection pixel, converting an analog signal at a readout signal line of the column of chemical detection pixels to a digital signal by an Analog-to-Digital converter (ADC) and outputting the converted digital signal as the output signal for the chemical detection circuit.
The described embodiments may further provide a chemical detection circuit that may comprise a pixel array comprising a plurality of chemically-sensitive pixels formed in columns and rows. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor and a row selection device. The chemical detection circuit may further comprise a pair of analog-to-digital converter (ADC) circuit blocks, a pair of input/output (I/O) circuit blocks coupled to the pair of ADC circuit blocks respectively and a plurality of serial link terminals coupled to the pair of IO circuit blocks.
The described embodiments may further provide a method to read out data from a chemical detection device. The method may comprise reading data from a plurality of columns of chemically-sensitive pixels on the chemical detection device in parallel. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor and a row selection device. The method may further comprise digitizing data read from the plurality of columns of chemically-sensitive pixels in parallel, serializing the digitized data in parallel for each column of chemically-sensitive pixels respectively, and transmitting the buffered digitized data on a plurality of serial links in parallel.
In one embodiment, the column ADCs 5206.1 and 5206.2 may include a plurality of ADCs each corresponding to one column. In another embodiment, the column ADCs 5206.1 and 5206.2 may include a plurality of ADCs and each ADC may be shared between several columns (e.g., using one or more multiplexers). Moreover, in one embodiment, the column ADCs 5206.1 and 5206.2 may perform offset cancellation.
The bias circuits 5210.1˜5210.3 may generate all bias and reference voltages needed for the chemical detection circuit 5200 on chip. That is, the chemical detection circuit 5200 does not have any external analog references. The bias circuits 5210.1˜5210.3 may need an external power supply, such as VDDA to function. The timing sequencer 5212 may provide the internal timing signals for the chemical detection circuit 5200.
The plurality of output terminals D[0]˜D[N−1] may provide serial links to one or more devices external of the IC chip. The serial links may use printed circuit board transmission lines. The signaling over the transmission lines may use differential signaling or CMOS signaling. The differential signaling may be any differential signaling scheme, for example, Low-voltage differential signaling (LVDS) or current mode logic (CML). In one embodiment, half of the output pins may be placed on one side of the chip 5200 and another half on an opposite side. The number N may be an even number (e.g., 24, 32). Further, in one embodiment, the serial interface may be programmable. For example, the strength of the drivers may be programmed and tuned for a given system. The driver type (LVDS, CML, CMOS) may also be programmed. Moreover, on-chip termination may be enabled or disabled. Various aspects of the protocol may be configured such as run-length control and format.
The DACs 5312.1 and 5312.2 may provide reference voltages for the column comparators 5304 to perform analog-to-digital conversion. A pair of latches blocks 5306 and 5308 may provide buffer for the output data. The digitized data may be sent from the column comparators first to the A latches 5306 and then sent from the A latches 5306 to the B latches 5308 according to the control provided by the gray code blocks 5314.1 and 5314.2. A plurality of output serializer 5310.1˜5310.n may be coupled between the buffer and the output terminals D[0]˜D[n−1] (e.g., n=N/2). The gray code circuits 5314.1˜5314.2 may distribute a digital count to all of the latches that are controlled by the comparators 5304 such that when a given comparator transitions, the gray code may be latched into memory. This gray code may be set to count synchronously with a DAC ramp circuit which establishes a global reference for all comparators of the comparators 5304. When the global reference falls below the pixel value held at given column, a corresponding comparator may fire. Since the comparator can transition asynchronous to the clock, the count may be distributed with a gray code where only one bit transition is made at any time is used to avoid invalid codes.
In one embodiment, each output terminal may comprise two pins for differential signaling (e.g., low-voltage differential signaling). In one embodiment, the A latches 5306 may be the master latches while the B latches 5308 may be the slave latches. The latches may allow the analog-to-digital conversion to run in parallel to the readout of a previously converted row.
The on-chip bias and reference voltages may be provided by the bias and reference circuit block 5316. As shown in
The shift registers 5402 may be part of the I/O buffer. In one embodiment, as shown in
Then, the multiplexer 5408 may select one of the pair of ping-pong registers 5406 to output its data to the multiplexer 5410. The multiplexer 5410 may select either the output data from the multiplexer 5408 or the BIST data to be sent to the encoder 5412. To achieve DC balance, an encoding scheme such as 8b/10b may be used. Thus, in one embodiment, the encoder 5412 may be an 8B10B encoder. It should be noted that other encoding schemes may also be applied. The encoded data from the encoder 5412 may be serialized in the serializer 5413 and sent out by the driver 5418. In one embodiment, the serializer 5413 may be driven by a PLL clock signal. In one embodiment, the driver 5418 may be configured to transmit data signals by low-voltage differential signaling. In one embodiment, the driver 5418 may work in a differential mode, in which one bit may be transmitted at each transmit clock signal and the pair of output pins may carry the differential data pair. In another embodiment, the driver 5418 may work in a dual-channel mode, in which two bits may be transmitted per transmit clock cycle in parallel by the pair of output pins of an output terminal.
Several embodiments of the present invention are specifically illustrated and described herein. However, it will be appreciated that modifications and variations of the present invention are covered by the above teachings. In other instances, well-known operations, components and circuits have not been described in detail so as not to obscure the embodiments. It can be appreciated that the specific structural and functional details disclosed herein may be representative and do not necessarily limit the scope of the embodiments. For example, some embodiments are described with an NMOS. A skilled artisan would appreciate that a PMOS may be used as well.
Those skilled in the art may appreciate from the foregoing description that the present invention may be implemented in a variety of forms, and that the various embodiments may be implemented alone or in combination. Therefore, while the embodiments of the present invention have been described in connection with particular examples thereof, the true scope of the embodiments and/or methods of the present invention should not be so limited since other modifications will become apparent to the skilled practitioner upon a study of the drawings, specification, and following claims.
Various embodiments may be implemented using hardware elements, software elements, or a combination of both. Examples of hardware elements may include processors, microprocessors, circuits, circuit elements (e.g., transistors, resistors, capacitors, inductors, and so forth), integrated circuits, application specific integrated circuits (ASIC), programmable logic devices (PLD), digital signal processors (DSP), field programmable gate array (FPGA), logic gates, registers, semiconductor device, chips, microchips, chip sets, and so forth. Examples of software may include software components, programs, applications, computer programs, application programs, system programs, machine programs, operating system software, middleware, firmware, software modules, routines, subroutines, functions, methods, procedures, software interfaces, application program interfaces (API), instruction sets, computing code, computer code, code segments, computer code segments, words, values, symbols, or any combination thereof. Determining whether an embodiment is implemented using hardware elements and/or software elements may vary in accordance with any number of factors, such as desired computational rate, power levels, heat tolerances, processing cycle budget, input data rates, output data rates, memory resources, data bus speeds and other design or performance constraints.
Some embodiments may be implemented, for example, using a computer-readable medium or article which may store an instruction or a set of instructions that, if executed by a machine, may cause the machine to perform a method and/or operations in accordance with the embodiments. Such a machine may include, for example, any suitable processing platform, computing platform, computing device, processing device, computing system, processing system, computer, processor, or the like, and may be implemented using any suitable combination of hardware and/or software. The computer-readable medium or article may include, for example, any suitable type of memory unit, memory device, memory article, memory medium, storage device, storage article, storage medium and/or storage unit, for example, memory, removable or non-removable media, erasable or non-erasable media, writeable or re-writeable media, digital or analog media, hard disk, floppy disk, Compact Disc Read Only Memory (CD-ROM), Compact Disc Recordable (CD-R), Compact Disc Rewriteable (CD-RW), optical disk, magnetic media, magneto-optical media, removable memory cards or disks, various types of Digital Versatile Disc (DVD), a tape, a cassette, or the like. The instructions may include any suitable type of code, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, and the like, implemented using any suitable high-level, low-level, object-oriented, visual, compiled and/or interpreted programming language.
This application is a continuation of U.S. application Ser. No. 15/943,668, filed Apr. 2, 2018. U.S. application Ser. No. 15/943,668 is a continuation application of U.S. application Ser. No. 15/292,795 filed Oct. 13, 2016. U.S. application Ser. No. 15/292,795 is a divisional of U.S. application Ser. No. 14/597,507 filed Jan. 15, 2015. U.S. application Ser. No. 14/597,507 is a continuation of U.S. application Ser. No. 13/861,237 filed Apr. 11, 2013; now U.S. Pat. No. 8,983,783. U.S. Pat. No. 8,983,783 is a continuation of U.S. patent application Ser. No. 13/174,514 filed Jun. 30, 2011; now U.S. Pat. No. 8,731,847. U.S. Pat. No. 8,731,847 claims benefit of U.S. Provisional Application No. 61/360,493 filed Jun. 30, 2010, U.S. Provisional Application No. 61/360,495 filed Jul. 1, 2010, U.S. Provisional Application No. 61/361,403 filed Jul. 3, 2010, and U.S. Provisional Application No. 61/365,327 filed Jul. 17, 2010. All of the aforementioned applications are incorporated herein by reference, each in their entirety.
| Number | Name | Date | Kind |
|---|---|---|---|
| 3531258 | Merrifield et al. | Sep 1970 | A |
| 4008736 | Wittmann-Liebold et al. | Feb 1977 | A |
| 4086642 | Yoshida et al. | Apr 1978 | A |
| 4411741 | Janata | Oct 1983 | A |
| 4437969 | Covington et al. | Mar 1984 | A |
| 4438354 | Haque et al. | Mar 1984 | A |
| 4444644 | Hiramoto et al. | Apr 1984 | A |
| 4490678 | Kuisl et al. | Dec 1984 | A |
| 4558845 | Hunkapiller | Dec 1985 | A |
| 4641084 | Komatsu | Feb 1987 | A |
| 4660063 | Anthony | Apr 1987 | A |
| 4691167 | V'D Vlekkert et al. | Sep 1987 | A |
| 4701253 | Ligtenberg et al. | Oct 1987 | A |
| 4722830 | Urie et al. | Feb 1988 | A |
| 4743954 | Brown | May 1988 | A |
| 4764797 | Shaw et al. | Aug 1988 | A |
| 4777019 | Dandekar | Oct 1988 | A |
| 4822566 | Newman | Apr 1989 | A |
| 4863849 | Melamede | Sep 1989 | A |
| 4864229 | Lauks et al. | Sep 1989 | A |
| 4874499 | Smith et al. | Oct 1989 | A |
| 4893088 | Myers et al. | Jan 1990 | A |
| 4927736 | Mueller et al. | May 1990 | A |
| 4971903 | Hyman | Nov 1990 | A |
| 5009766 | Lauks | Apr 1991 | A |
| 5038192 | Bonneau et al. | Aug 1991 | A |
| 5082788 | Farnsworth et al. | Jan 1992 | A |
| 5110441 | Kinlen et al. | May 1992 | A |
| 5113870 | Rossenfeld | May 1992 | A |
| 5126022 | Soane et al. | Jun 1992 | A |
| 5126759 | Small et al. | Jun 1992 | A |
| 5132418 | Caruthers et al. | Jul 1992 | A |
| 5138251 | Koshiishi et al. | Aug 1992 | A |
| 5140393 | Hijikihigawa et al. | Aug 1992 | A |
| 5142236 | Maloberti et al. | Aug 1992 | A |
| 5151587 | Machida et al. | Sep 1992 | A |
| 5151759 | Vinal | Sep 1992 | A |
| 5164319 | Hafeman et al. | Nov 1992 | A |
| 5202576 | Liu et al. | Apr 1993 | A |
| 5284566 | Cuomo et al. | Feb 1994 | A |
| 5313984 | Garwood, Jr. et al. | May 1994 | A |
| 5317407 | Michon | May 1994 | A |
| 5319226 | Sohn et al. | Jun 1994 | A |
| 5407854 | Baxter et al. | Apr 1995 | A |
| 5436149 | Barnes | Jul 1995 | A |
| 5439839 | Jang | Aug 1995 | A |
| 5466348 | Holm-Kennedy | Nov 1995 | A |
| 5475337 | Tatsumi | Dec 1995 | A |
| 5490971 | Gifford et al. | Feb 1996 | A |
| 5498392 | Wilding et al. | Mar 1996 | A |
| 5520787 | Hanagan et al. | May 1996 | A |
| 5554339 | Cozzette et al. | Sep 1996 | A |
| 5583462 | Grasshoff | Dec 1996 | A |
| 5587128 | Wilding et al. | Dec 1996 | A |
| 5587894 | Naruo | Dec 1996 | A |
| 5593838 | Zanzucchi et al. | Jan 1997 | A |
| 5600451 | Maki | Feb 1997 | A |
| 5627403 | Bacchetta et al. | May 1997 | A |
| 5631704 | Dickinson et al. | May 1997 | A |
| 5637469 | Wilding et al. | Jun 1997 | A |
| 5646558 | Jamshidi | Jul 1997 | A |
| 5650649 | Tsukiji | Jul 1997 | A |
| 5702964 | Lee | Dec 1997 | A |
| 5793230 | Chu et al. | Aug 1998 | A |
| 5830645 | Pinkel et al. | Nov 1998 | A |
| 5846708 | Hollis et al. | Dec 1998 | A |
| 5894284 | Garrity et al. | Apr 1999 | A |
| 5907765 | Lescouzeres et al. | May 1999 | A |
| 5911873 | McCarron et al. | Jun 1999 | A |
| 5912560 | Pasternak | Jun 1999 | A |
| 5922591 | Anderson et al. | Jul 1999 | A |
| 5923421 | Rajic et al. | Jul 1999 | A |
| 5944970 | Rosenblatt | Aug 1999 | A |
| 5958703 | Dower et al. | Sep 1999 | A |
| 5965452 | Kovacs | Oct 1999 | A |
| 6001299 | Kawabe et al. | Dec 1999 | A |
| 6002299 | Thomsen | Dec 1999 | A |
| 6010607 | Ramsey | Jan 2000 | A |
| 6021172 | Fossum et al. | Feb 2000 | A |
| 6033546 | Ramsey | Mar 2000 | A |
| 6054034 | Soane et al. | Apr 2000 | A |
| 6107032 | Kilger et al. | Aug 2000 | A |
| 6191444 | Clampitt et al. | Feb 2001 | B1 |
| 6195585 | Karunasiri et al. | Feb 2001 | B1 |
| 6210891 | Nyren et al. | Apr 2001 | B1 |
| 6255678 | Sawada et al. | Jul 2001 | B1 |
| 6262568 | Komatsu et al. | Jul 2001 | B1 |
| 6274320 | Rothberg et al. | Aug 2001 | B1 |
| 6275061 | Tomita | Aug 2001 | B1 |
| 6280586 | Wolf et al. | Aug 2001 | B1 |
| 6294133 | Sawada et al. | Sep 2001 | B1 |
| 6327410 | Walt et al. | Dec 2001 | B1 |
| 6353324 | Uber, III et al. | Mar 2002 | B1 |
| 6355431 | Chee et al. | Mar 2002 | B1 |
| 6361671 | Mathies et al. | Mar 2002 | B1 |
| 6372291 | Hua et al. | Apr 2002 | B1 |
| 6376256 | Dunnington et al. | Apr 2002 | B1 |
| 6384684 | Redman-White | May 2002 | B1 |
| 6399952 | Maher et al. | Jun 2002 | B1 |
| 6403957 | Fodor et al. | Jun 2002 | B1 |
| 6406848 | Bridgham et al. | Jun 2002 | B1 |
| 6413792 | Sauer et al. | Jul 2002 | B1 |
| 6429027 | Chee et al. | Aug 2002 | B1 |
| 6432360 | Church | Aug 2002 | B1 |
| 6433386 | Yun et al. | Aug 2002 | B1 |
| 6459398 | Gureshnik et al. | Oct 2002 | B1 |
| 6465178 | Chappa et al. | Oct 2002 | B2 |
| 6475728 | Martin et al. | Nov 2002 | B1 |
| 6482639 | Snow et al. | Nov 2002 | B2 |
| 6485944 | Church et al. | Nov 2002 | B1 |
| 6490220 | Merritt et al. | Dec 2002 | B1 |
| 6499499 | Dantsker et al. | Dec 2002 | B2 |
| 6511803 | Church et al. | Jan 2003 | B1 |
| 6518024 | Choong et al. | Feb 2003 | B2 |
| 6518146 | Singh et al. | Feb 2003 | B1 |
| 6535824 | Mansky et al. | Mar 2003 | B1 |
| 6537881 | Rangarajan et al. | Mar 2003 | B1 |
| 6538593 | Yang et al. | Mar 2003 | B2 |
| 6545620 | Groeneweg | Apr 2003 | B2 |
| 6571189 | Jensen et al. | May 2003 | B2 |
| 6602702 | McDevitt et al. | Aug 2003 | B1 |
| 6605428 | Kilger et al. | Aug 2003 | B2 |
| 6613513 | Parce et al. | Sep 2003 | B1 |
| 6613525 | Nelson et al. | Sep 2003 | B2 |
| 6618083 | Chen et al. | Sep 2003 | B1 |
| 6624637 | Pechstein | Sep 2003 | B1 |
| 6627154 | Goodman et al. | Sep 2003 | B1 |
| 6654505 | Bridgham et al. | Nov 2003 | B2 |
| 6657269 | Migliorato et al. | Dec 2003 | B2 |
| 6671341 | Kinget et al. | Dec 2003 | B1 |
| 6682899 | Bryan et al. | Jan 2004 | B2 |
| 6682936 | Kovacs | Jan 2004 | B2 |
| 6686638 | Fischer et al. | Feb 2004 | B2 |
| 6700814 | Nahas et al. | Mar 2004 | B1 |
| 6703660 | Yitzchaik et al. | Mar 2004 | B2 |
| 6716629 | Hess et al. | Apr 2004 | B2 |
| 6762022 | Makarov et al. | Jul 2004 | B2 |
| 6770472 | Manalis et al. | Aug 2004 | B2 |
| 6780591 | Williams et al. | Aug 2004 | B2 |
| 6787111 | Roach et al. | Sep 2004 | B2 |
| 6795006 | Delight et al. | Sep 2004 | B1 |
| 6806052 | Bridgham et al. | Oct 2004 | B2 |
| 6828100 | Ronaghi | Dec 2004 | B1 |
| 6831994 | Bridgham et al. | Dec 2004 | B2 |
| 6841128 | Kambara et al. | Jan 2005 | B2 |
| 6859570 | Walt et al. | Feb 2005 | B2 |
| 6878255 | Wang et al. | Apr 2005 | B1 |
| 6888194 | Yoshino | May 2005 | B2 |
| 6898121 | Chien et al. | May 2005 | B2 |
| 6906524 | Chung et al. | Jun 2005 | B2 |
| 6919211 | Fodor et al. | Jul 2005 | B1 |
| 6926865 | Howard | Aug 2005 | B2 |
| 6927045 | Hadd et al. | Aug 2005 | B2 |
| 6929944 | Matson | Aug 2005 | B2 |
| 6939451 | Zhao et al. | Sep 2005 | B2 |
| 6953958 | Baxter et al. | Oct 2005 | B2 |
| 6958216 | Kelley et al. | Oct 2005 | B2 |
| 6960437 | Enzelberger et al. | Nov 2005 | B2 |
| 6969488 | Bridgham et al. | Nov 2005 | B2 |
| 6998274 | Chee et al. | Feb 2006 | B2 |
| 7008550 | Li et al. | Mar 2006 | B2 |
| 7019305 | Eversmann et al. | Mar 2006 | B2 |
| 7022288 | Boss | Apr 2006 | B1 |
| 7033754 | Chee et al. | Apr 2006 | B2 |
| 7037687 | Williams et al. | May 2006 | B2 |
| 7045097 | Kovacs | May 2006 | B2 |
| 7049645 | Sawada et al. | May 2006 | B2 |
| 7060431 | Chee et al. | Jun 2006 | B2 |
| 7067886 | Bonges, III et al. | Jun 2006 | B2 |
| 7084641 | Brederlow et al. | Aug 2006 | B2 |
| 7085502 | Shushakov et al. | Aug 2006 | B2 |
| 7087387 | Gerdes et al. | Aug 2006 | B2 |
| 7090975 | Shultz et al. | Aug 2006 | B2 |
| 7091059 | Rhodes | Aug 2006 | B2 |
| 7092757 | Larson et al. | Aug 2006 | B2 |
| 7097973 | Zenhausern | Aug 2006 | B1 |
| 7105300 | Parce et al. | Sep 2006 | B2 |
| 7106089 | Nakano et al. | Sep 2006 | B2 |
| 7129554 | Lieber et al. | Oct 2006 | B2 |
| 7169560 | Lapidus et al. | Jan 2007 | B2 |
| 7173445 | Fujii et al. | Feb 2007 | B2 |
| 7190026 | Lotfi et al. | Mar 2007 | B2 |
| 7192745 | Jaeger | Mar 2007 | B2 |
| 7193453 | Wei et al. | Mar 2007 | B2 |
| 7211390 | Rothberg et al. | May 2007 | B2 |
| 7220550 | Keen | May 2007 | B2 |
| 7223371 | Hayenga et al. | May 2007 | B2 |
| 7223540 | Pourmand et al. | May 2007 | B2 |
| 7226734 | Chee et al. | Jun 2007 | B2 |
| 7229799 | Williams | Jun 2007 | B2 |
| 7235389 | Lim et al. | Jun 2007 | B2 |
| 7238323 | Knapp et al. | Jul 2007 | B2 |
| 7239188 | Xu et al. | Jul 2007 | B1 |
| 7244559 | Rothberg et al. | Jul 2007 | B2 |
| 7244567 | Chen et al. | Jul 2007 | B2 |
| 7264929 | Rothberg et al. | Sep 2007 | B2 |
| 7264934 | Fuller | Sep 2007 | B2 |
| 7265929 | Umeda et al. | Sep 2007 | B2 |
| 7267751 | Gelbart et al. | Sep 2007 | B2 |
| 7276749 | Martin et al. | Oct 2007 | B2 |
| 7279588 | Hong et al. | Oct 2007 | B2 |
| 7282370 | Bridgham et al. | Oct 2007 | B2 |
| 7285384 | Fan et al. | Oct 2007 | B2 |
| 7291496 | Holm-Kennedy | Nov 2007 | B2 |
| 7297518 | Quake et al. | Nov 2007 | B2 |
| 7298475 | Gandhi et al. | Nov 2007 | B2 |
| 7303875 | Bock et al. | Dec 2007 | B1 |
| 7317216 | Holm-Kennedy | Jan 2008 | B2 |
| 7317484 | Dosluoglu et al. | Jan 2008 | B2 |
| 7323305 | Leamon et al. | Jan 2008 | B2 |
| 7335526 | Peters et al. | Feb 2008 | B2 |
| 7335762 | Rothberg et al. | Feb 2008 | B2 |
| 7359058 | Kranz et al. | Apr 2008 | B2 |
| 7361946 | Johnson et al. | Apr 2008 | B2 |
| 7363717 | Ekseth et al. | Apr 2008 | B2 |
| 7381936 | Tan et al. | Jun 2008 | B2 |
| 7394263 | Pechstein et al. | Jul 2008 | B2 |
| 7419636 | Aker et al. | Sep 2008 | B2 |
| 7425431 | Church et al. | Sep 2008 | B2 |
| 7455971 | Chee et al. | Nov 2008 | B2 |
| 7462452 | Williams et al. | Dec 2008 | B2 |
| 7462512 | Levon et al. | Dec 2008 | B2 |
| 7462709 | Jaeger | Dec 2008 | B2 |
| 7465512 | Wright et al. | Dec 2008 | B2 |
| 7466258 | Akopyan et al. | Dec 2008 | B1 |
| 7470352 | Eversmann et al. | Dec 2008 | B2 |
| 7476504 | Turner | Jan 2009 | B2 |
| 7482153 | Okada et al. | Jan 2009 | B2 |
| 7482677 | Lee et al. | Jan 2009 | B2 |
| 7499513 | Tetzlaff et al. | Mar 2009 | B1 |
| 7515124 | Yaguma et al. | Apr 2009 | B2 |
| 7534097 | Wong et al. | May 2009 | B2 |
| 7538827 | Chou | May 2009 | B2 |
| 7575865 | Leamon et al. | Aug 2009 | B2 |
| 7576037 | Engelhardt et al. | Aug 2009 | B2 |
| 7595883 | El Gamal et al. | Sep 2009 | B1 |
| 7605650 | Forbes | Oct 2009 | B2 |
| 7608810 | Yamada | Oct 2009 | B2 |
| 7609093 | Sarig et al. | Oct 2009 | B2 |
| 7609303 | Lee et al. | Oct 2009 | B1 |
| 7612369 | Stasiak | Nov 2009 | B2 |
| 7612817 | Tay | Nov 2009 | B2 |
| 7614135 | Santini, Jr. et al. | Nov 2009 | B2 |
| 7622294 | Walt et al. | Nov 2009 | B2 |
| 7645596 | Williams et al. | Jan 2010 | B2 |
| 7649358 | Toumazou et al. | Jan 2010 | B2 |
| 7667501 | Surendranath et al. | Feb 2010 | B2 |
| 7686929 | Toumazou et al. | Mar 2010 | B2 |
| 7695907 | Miyahara et al. | Apr 2010 | B2 |
| 7733401 | Takeda | Jun 2010 | B2 |
| 7772383 | Chakrabarti et al. | Aug 2010 | B2 |
| 7785785 | Pourmand et al. | Aug 2010 | B2 |
| 7785790 | Church et al. | Aug 2010 | B1 |
| 7794584 | Chodavarapu et al. | Sep 2010 | B2 |
| 7821806 | Horiuchi | Oct 2010 | B2 |
| 7838226 | Kamahori et al. | Nov 2010 | B2 |
| 7842377 | Lanphere et al. | Nov 2010 | B2 |
| 7842457 | Berka et al. | Nov 2010 | B2 |
| 7859029 | Lee et al. | Dec 2010 | B2 |
| 7859291 | Kim | Dec 2010 | B2 |
| 7875440 | Williams et al. | Jan 2011 | B2 |
| 7884398 | Levon et al. | Feb 2011 | B2 |
| 7885490 | Heideman et al. | Feb 2011 | B2 |
| 7888013 | Miyahara et al. | Feb 2011 | B2 |
| 7888015 | Toumazou et al. | Feb 2011 | B2 |
| 7888708 | Yazawa et al. | Feb 2011 | B2 |
| 7890891 | Stuber et al. | Feb 2011 | B2 |
| 7898277 | Weir | Mar 2011 | B2 |
| 7923240 | Su | Apr 2011 | B2 |
| 7927797 | Nobile et al. | Apr 2011 | B2 |
| 7932034 | Esfandyarpour et al. | Apr 2011 | B2 |
| 7948015 | Rothberg et al. | May 2011 | B2 |
| 7955995 | Kakehata et al. | Jun 2011 | B2 |
| 7960776 | Kim et al. | Jun 2011 | B2 |
| 7972828 | Ward et al. | Jul 2011 | B2 |
| 7981362 | Glezer et al. | Jul 2011 | B2 |
| 8012690 | Berka et al. | Sep 2011 | B2 |
| 8017938 | Gomez et al. | Sep 2011 | B2 |
| 8035175 | Shim et al. | Oct 2011 | B2 |
| 8052863 | Suzuki et al. | Nov 2011 | B2 |
| 8067731 | Matyjaszczyk et al. | Nov 2011 | B2 |
| 8072188 | Yorinobu et al. | Dec 2011 | B2 |
| 8114591 | Toumazou et al. | Feb 2012 | B2 |
| 8124936 | Lagna | Feb 2012 | B1 |
| 8133698 | Silver | Mar 2012 | B2 |
| 8138496 | Li et al. | Mar 2012 | B2 |
| 8199859 | Zerbe et al. | Jun 2012 | B2 |
| 8217433 | Fife | Jul 2012 | B1 |
| 8227877 | Lee et al. | Jul 2012 | B2 |
| 8231831 | Hartzell et al. | Jul 2012 | B2 |
| 8232582 | Sauer et al. | Jul 2012 | B2 |
| 8232813 | Burdett et al. | Jul 2012 | B2 |
| 8247849 | Fife et al. | Aug 2012 | B2 |
| 8248356 | Chen | Aug 2012 | B2 |
| 8262900 | Rothberg et al. | Sep 2012 | B2 |
| 8263336 | Rothberg et al. | Sep 2012 | B2 |
| 8264014 | Rothberg et al. | Sep 2012 | B2 |
| 8269261 | Rothberg et al. | Sep 2012 | B2 |
| 8277628 | Ronaghi et al. | Oct 2012 | B2 |
| 8293082 | Rothberg et al. | Oct 2012 | B2 |
| 8306757 | Rothberg et al. | Nov 2012 | B2 |
| 8313625 | Rothberg et al. | Nov 2012 | B2 |
| 8313639 | Rothberg et al. | Nov 2012 | B2 |
| 8317999 | Rothberg et al. | Nov 2012 | B2 |
| 8340914 | Gatewood et al. | Dec 2012 | B2 |
| 8343856 | Therrien et al. | Jan 2013 | B2 |
| 8349167 | Rothberg et al. | Jan 2013 | B2 |
| 8357547 | Lee et al. | Jan 2013 | B2 |
| 8361713 | Bridgham et al. | Jan 2013 | B2 |
| 8383396 | Kamahori et al. | Feb 2013 | B2 |
| 8415716 | Rothberg et al. | Apr 2013 | B2 |
| 8421437 | Levine | Apr 2013 | B2 |
| 8426898 | Rothberg et al. | Apr 2013 | B2 |
| 8426899 | Rothberg et al. | Apr 2013 | B2 |
| 8435395 | Rothberg et al. | May 2013 | B2 |
| 8441044 | Rothberg et al. | May 2013 | B2 |
| 8445194 | Drmanac et al. | May 2013 | B2 |
| 8445945 | Rothberg et al. | May 2013 | B2 |
| 8449824 | Sun | May 2013 | B2 |
| 8450781 | Rothberg et al. | May 2013 | B2 |
| 8470164 | Rothberg et al. | Jun 2013 | B2 |
| 8492800 | Rothberg et al. | Jul 2013 | B2 |
| 8496802 | Rothberg et al. | Jul 2013 | B2 |
| 8502278 | Rothberg et al. | Aug 2013 | B2 |
| 8519448 | Rothberg et al. | Aug 2013 | B2 |
| 8524057 | Rothberg et al. | Sep 2013 | B2 |
| 8530941 | Rothberg et al. | Sep 2013 | B2 |
| 8535513 | Rothberg et al. | Sep 2013 | B2 |
| 8552771 | Jordan et al. | Oct 2013 | B1 |
| 8558288 | Rothberg et al. | Oct 2013 | B2 |
| 8575664 | Rothberg et al. | Nov 2013 | B2 |
| 8592154 | Rearick | Nov 2013 | B2 |
| 8653567 | Fife | Feb 2014 | B2 |
| 8658017 | Rothberg et al. | Feb 2014 | B2 |
| 8673627 | Nobile et al. | Mar 2014 | B2 |
| 8685230 | Rothberg et al. | Apr 2014 | B2 |
| 8685298 | Rockenschaub et al. | Apr 2014 | B2 |
| 8728844 | Liu et al. | May 2014 | B1 |
| 8731847 | Johnson et al. | May 2014 | B2 |
| 8742469 | Milgrew | Jun 2014 | B2 |
| 8742472 | Rothberg et al. | Jun 2014 | B2 |
| 8747748 | Li et al. | Jun 2014 | B2 |
| 8748947 | Milgrew | Jun 2014 | B2 |
| 8764969 | Rothberg et al. | Jul 2014 | B2 |
| 8766327 | Milgrew | Jul 2014 | B2 |
| 8766328 | Rothberg et al. | Jul 2014 | B2 |
| 8776573 | Rearick et al. | Jul 2014 | B2 |
| 8786331 | Jordan et al. | Jul 2014 | B2 |
| 8796036 | Fife et al. | Aug 2014 | B2 |
| 8821798 | Bustillo et al. | Sep 2014 | B2 |
| 8823380 | Levine et al. | Sep 2014 | B2 |
| 8841217 | Fife et al. | Sep 2014 | B1 |
| 8847637 | Guyton | Sep 2014 | B1 |
| 8912005 | Fife et al. | Dec 2014 | B1 |
| 8945912 | Bashir et al. | Feb 2015 | B2 |
| 8962366 | Putnam et al. | Feb 2015 | B2 |
| 8963216 | Fife et al. | Feb 2015 | B2 |
| 8983783 | Johnson et al. | Mar 2015 | B2 |
| 8986981 | Toumazou | Mar 2015 | B2 |
| 9023674 | Shen et al. | May 2015 | B2 |
| 9201041 | Dalton et al. | Dec 2015 | B2 |
| 9270264 | Jordan et al. | Feb 2016 | B2 |
| 9389199 | Cheng et al. | Jul 2016 | B2 |
| 20020012933 | Rothberg et al. | Jan 2002 | A1 |
| 20020042388 | Cooper et al. | Apr 2002 | A1 |
| 20020070791 | Dabral | Jun 2002 | A1 |
| 20020081714 | Jain et al. | Jun 2002 | A1 |
| 20020085136 | Moon et al. | Jul 2002 | A1 |
| 20020131899 | Kovacs | Sep 2002 | A1 |
| 20020150909 | Stuelpnagel et al. | Oct 2002 | A1 |
| 20020168678 | Williams et al. | Nov 2002 | A1 |
| 20030020334 | Nozu | Jan 2003 | A1 |
| 20030044833 | Benchikh et al. | Mar 2003 | A1 |
| 20030054396 | Weiner | Mar 2003 | A1 |
| 20030064366 | Hardin et al. | Apr 2003 | A1 |
| 20030068629 | Rothberg et al. | Apr 2003 | A1 |
| 20030108867 | Chee et al. | Jun 2003 | A1 |
| 20030119020 | Stevens et al. | Jun 2003 | A1 |
| 20030124572 | Umek et al. | Jul 2003 | A1 |
| 20030124599 | Chen et al. | Jul 2003 | A1 |
| 20030141928 | Lee | Jul 2003 | A1 |
| 20030141929 | Casper et al. | Jul 2003 | A1 |
| 20030152994 | Woudenberg et al. | Aug 2003 | A1 |
| 20030155942 | Thewes | Aug 2003 | A1 |
| 20030186262 | Cailloux | Oct 2003 | A1 |
| 20030211502 | Sauer et al. | Nov 2003 | A1 |
| 20030215791 | Garini et al. | Nov 2003 | A1 |
| 20030215857 | Kilger et al. | Nov 2003 | A1 |
| 20030224419 | Corcoran et al. | Dec 2003 | A1 |
| 20030227296 | Lee | Dec 2003 | A1 |
| 20040002470 | Keith et al. | Jan 2004 | A1 |
| 20040023253 | Kunwar et al. | Feb 2004 | A1 |
| 20040079636 | Hsia et al. | Apr 2004 | A1 |
| 20040106211 | Kauer et al. | Jun 2004 | A1 |
| 20040121354 | Yazawa et al. | Jun 2004 | A1 |
| 20040130377 | Takeda et al. | Jul 2004 | A1 |
| 20040136866 | Pontis et al. | Jul 2004 | A1 |
| 20040146849 | Huang et al. | Jul 2004 | A1 |
| 20040185484 | Costa et al. | Sep 2004 | A1 |
| 20040185591 | Hsiung et al. | Sep 2004 | A1 |
| 20040197803 | Yaku et al. | Oct 2004 | A1 |
| 20050006234 | Hassibi | Jan 2005 | A1 |
| 20050009022 | Weiner et al. | Jan 2005 | A1 |
| 20050031490 | Gumbrecht et al. | Feb 2005 | A1 |
| 20050032075 | Yaku et al. | Feb 2005 | A1 |
| 20050058990 | Guia et al. | Mar 2005 | A1 |
| 20050093645 | Watanabe et al. | May 2005 | A1 |
| 20050095602 | West et al. | May 2005 | A1 |
| 20050100939 | Namsaraev et al. | May 2005 | A1 |
| 20050106587 | Klapproth et al. | May 2005 | A1 |
| 20050151181 | Beintner et al. | Jul 2005 | A1 |
| 20050156207 | Yazawa et al. | Jul 2005 | A1 |
| 20050156584 | Feng | Jul 2005 | A1 |
| 20050181440 | Chee et al. | Aug 2005 | A1 |
| 20050189960 | Tajima | Sep 2005 | A1 |
| 20050191698 | Chee et al. | Sep 2005 | A1 |
| 20050202582 | Eversmann et al. | Sep 2005 | A1 |
| 20050206548 | Muramatsu et al. | Sep 2005 | A1 |
| 20050212016 | Brunner et al. | Sep 2005 | A1 |
| 20050221473 | Dubin et al. | Oct 2005 | A1 |
| 20050230245 | Morgenshtein et al. | Oct 2005 | A1 |
| 20050239132 | Klapproth | Oct 2005 | A1 |
| 20050282224 | Fouillet et al. | Dec 2005 | A1 |
| 20060000772 | Sano et al. | Jan 2006 | A1 |
| 20060024711 | Lapidus et al. | Feb 2006 | A1 |
| 20060035400 | Wu et al. | Feb 2006 | A1 |
| 20060038601 | Giguere et al. | Feb 2006 | A1 |
| 20060057025 | Eversmann et al. | Mar 2006 | A1 |
| 20060057604 | Chen et al. | Mar 2006 | A1 |
| 20060141474 | Miyahara et al. | Jun 2006 | A1 |
| 20060166203 | Tooke | Jul 2006 | A1 |
| 20060182664 | Peck et al. | Aug 2006 | A1 |
| 20060197118 | Migliorato et al. | Sep 2006 | A1 |
| 20060199193 | Koo et al. | Sep 2006 | A1 |
| 20060199493 | Hartmann et al. | Sep 2006 | A1 |
| 20060205061 | Roukes | Sep 2006 | A1 |
| 20060219558 | Hafeman et al. | Oct 2006 | A1 |
| 20060228721 | Leamon et al. | Oct 2006 | A1 |
| 20060246497 | Huang et al. | Nov 2006 | A1 |
| 20060269927 | Lieber et al. | Nov 2006 | A1 |
| 20060289726 | Paulus et al. | Dec 2006 | A1 |
| 20070087401 | Neilson et al. | Apr 2007 | A1 |
| 20070092872 | Rothberg et al. | Apr 2007 | A1 |
| 20070095663 | Chou et al. | May 2007 | A1 |
| 20070096164 | Peters et al. | May 2007 | A1 |
| 20070099173 | Spira et al. | May 2007 | A1 |
| 20070138132 | Barth | Jun 2007 | A1 |
| 20070172865 | Hardin et al. | Jul 2007 | A1 |
| 20070212681 | Shapiro et al. | Sep 2007 | A1 |
| 20070217963 | Elizarov et al. | Sep 2007 | A1 |
| 20070231824 | Chee et al. | Oct 2007 | A1 |
| 20070233477 | Halowani et al. | Oct 2007 | A1 |
| 20070247170 | Barbaro et al. | Oct 2007 | A1 |
| 20070250274 | Volkov et al. | Oct 2007 | A1 |
| 20070262363 | Tao et al. | Nov 2007 | A1 |
| 20070278488 | Hirabayashi et al. | Dec 2007 | A1 |
| 20080003142 | Link et al. | Jan 2008 | A1 |
| 20080014589 | Link et al. | Jan 2008 | A1 |
| 20080047836 | Strand et al. | Feb 2008 | A1 |
| 20080063566 | Matsumoto et al. | Mar 2008 | A1 |
| 20080085219 | Beebe et al. | Apr 2008 | A1 |
| 20080096216 | Quake | Apr 2008 | A1 |
| 20080111161 | Sorge et al. | May 2008 | A1 |
| 20080121946 | Youn et al. | May 2008 | A1 |
| 20080136933 | Dosluoglu et al. | Jun 2008 | A1 |
| 20080164917 | Floyd et al. | Jul 2008 | A1 |
| 20080178692 | Jung et al. | Jul 2008 | A1 |
| 20080185616 | Johnson et al. | Aug 2008 | A1 |
| 20080204048 | Stasiak et al. | Aug 2008 | A1 |
| 20080205559 | Iida | Aug 2008 | A1 |
| 20080210931 | Truong et al. | Sep 2008 | A1 |
| 20080230386 | Srinivasan et al. | Sep 2008 | A1 |
| 20090026082 | Rothberg et al. | Jan 2009 | A1 |
| 20090048124 | Leamon et al. | Feb 2009 | A1 |
| 20090062132 | Borner | Mar 2009 | A1 |
| 20090075383 | Buschmann et al. | Mar 2009 | A1 |
| 20090075838 | El Gamal et al. | Mar 2009 | A1 |
| 20090079414 | Levon et al. | Mar 2009 | A1 |
| 20090120905 | Kohl et al. | May 2009 | A1 |
| 20090121258 | Kumar | May 2009 | A1 |
| 20090127689 | Ye et al. | May 2009 | A1 |
| 20090149607 | Karim et al. | Jun 2009 | A1 |
| 20090156425 | Walt et al. | Jun 2009 | A1 |
| 20090170728 | Walt et al. | Jul 2009 | A1 |
| 20090194416 | Hsiung et al. | Aug 2009 | A1 |
| 20090273386 | Korobeynikov et al. | Nov 2009 | A1 |
| 20100007326 | Nakazato | Jan 2010 | A1 |
| 20100026814 | Shimoda | Feb 2010 | A1 |
| 20100039146 | Park et al. | Feb 2010 | A1 |
| 20100052765 | Makino | Mar 2010 | A1 |
| 20100105373 | Kanade | Apr 2010 | A1 |
| 20100133547 | Kunze et al. | Jun 2010 | A1 |
| 20100137143 | Rothberg et al. | Jun 2010 | A1 |
| 20100176463 | Koizumi et al. | Jul 2010 | A1 |
| 20100244106 | Parker et al. | Sep 2010 | A1 |
| 20100273166 | Garcia | Oct 2010 | A1 |
| 20100282617 | Rothberg et al. | Nov 2010 | A1 |
| 20100301398 | Rothberg et al. | Dec 2010 | A1 |
| 20110037121 | Lee et al. | Feb 2011 | A1 |
| 20110062972 | Je et al. | Mar 2011 | A1 |
| 20110114827 | Yamaoka et al. | May 2011 | A1 |
| 20110165557 | Ah et al. | Jul 2011 | A1 |
| 20110169056 | Wey et al. | Jul 2011 | A1 |
| 20110181253 | Isham et al. | Jul 2011 | A1 |
| 20110236263 | Sawada et al. | Sep 2011 | A1 |
| 20110262903 | Davidson et al. | Oct 2011 | A1 |
| 20110263463 | Rothberg et al. | Oct 2011 | A1 |
| 20110275522 | Rothberg et al. | Nov 2011 | A1 |
| 20110281737 | Rothberg et al. | Nov 2011 | A1 |
| 20110281741 | Rothberg et al. | Nov 2011 | A1 |
| 20110287945 | Rothberg et al. | Nov 2011 | A1 |
| 20110299337 | Parris et al. | Dec 2011 | A1 |
| 20120000274 | Fife | Jan 2012 | A1 |
| 20120001056 | Fife et al. | Jan 2012 | A1 |
| 20120001236 | Fife | Jan 2012 | A1 |
| 20120001237 | Fife et al. | Jan 2012 | A1 |
| 20120001615 | Levine | Jan 2012 | A1 |
| 20120001646 | Bolander et al. | Jan 2012 | A1 |
| 20120001779 | Fife et al. | Jan 2012 | A1 |
| 20120013392 | Rothberg et al. | Jan 2012 | A1 |
| 20120034607 | Rothberg et al. | Feb 2012 | A1 |
| 20120045368 | Hinz et al. | Feb 2012 | A1 |
| 20120045844 | Rothberg et al. | Feb 2012 | A1 |
| 20120055811 | Rothberg et al. | Mar 2012 | A1 |
| 20120055813 | Rothberg et al. | Mar 2012 | A1 |
| 20120056248 | Fife | Mar 2012 | A1 |
| 20120060587 | Babcock et al. | Mar 2012 | A1 |
| 20120067723 | Rearick et al. | Mar 2012 | A1 |
| 20120129703 | Rothberg et al. | May 2012 | A1 |
| 20120129732 | Rothberg et al. | May 2012 | A1 |
| 20120135870 | Rothberg et al. | May 2012 | A1 |
| 20120143531 | Davey et al. | Jun 2012 | A1 |
| 20120154018 | Sugiura | Jun 2012 | A1 |
| 20120161207 | Homyk et al. | Jun 2012 | A1 |
| 20120168307 | Fife | Jul 2012 | A1 |
| 20120173159 | Davey et al. | Jul 2012 | A1 |
| 20120249192 | Matsushita | Oct 2012 | A1 |
| 20120261274 | Rearick et al. | Oct 2012 | A1 |
| 20120286771 | Rothberg et al. | Nov 2012 | A1 |
| 20120326213 | Bustillo et al. | Dec 2012 | A1 |
| 20120326767 | Milgrew | Dec 2012 | A1 |
| 20120329043 | Milgrew | Dec 2012 | A1 |
| 20120329192 | Bustillo et al. | Dec 2012 | A1 |
| 20130001653 | Milgrew et al. | Jan 2013 | A1 |
| 20130009214 | Bustillo et al. | Jan 2013 | A1 |
| 20130027594 | Krymski | Jan 2013 | A1 |
| 20130056353 | Nemirovsky et al. | Mar 2013 | A1 |
| 20130105868 | Kalnitsky et al. | May 2013 | A1 |
| 20130135018 | Kuo et al. | May 2013 | A1 |
| 20130189790 | Li et al. | Jul 2013 | A1 |
| 20130210128 | Rothberg et al. | Aug 2013 | A1 |
| 20130210182 | Rothberg et al. | Aug 2013 | A1 |
| 20130210641 | Rothberg et al. | Aug 2013 | A1 |
| 20130217004 | Rothberg et al. | Aug 2013 | A1 |
| 20130217587 | Rothberg et al. | Aug 2013 | A1 |
| 20130281307 | Li et al. | Oct 2013 | A1 |
| 20130324421 | Rothberg et al. | Dec 2013 | A1 |
| 20130341734 | Merz | Dec 2013 | A1 |
| 20140075237 | Ware | Mar 2014 | A1 |
| 20140080717 | Li et al. | Mar 2014 | A1 |
| 20140148345 | Li et al. | May 2014 | A1 |
| 20140234981 | Zarkesh-Ha et al. | Aug 2014 | A1 |
| 20140235452 | Rothberg et al. | Aug 2014 | A1 |
| 20140235463 | Rothberg et al. | Aug 2014 | A1 |
| 20140308752 | Chang et al. | Oct 2014 | A1 |
| 20140364320 | Rothberg et al. | Dec 2014 | A1 |
| 20150097214 | Chen et al. | Apr 2015 | A1 |
| 20160178568 | Cheng et al. | Jun 2016 | A1 |
| 20170038334 | Barbee et al. | Feb 2017 | A1 |
| 20170059514 | Hoffman | Mar 2017 | A1 |
| 20170097317 | Johnson et al. | Apr 2017 | A1 |
| 20170102356 | Lin et al. | Apr 2017 | A1 |
| Number | Date | Country |
|---|---|---|
| 1582334 | Feb 2005 | CN |
| 1791974 | Jun 2006 | CN |
| 101676714 | Mar 2010 | CN |
| 4232532 | Apr 1994 | DE |
| 4430811 | Sep 1995 | DE |
| 102004044299 | Mar 2006 | DE |
| 102008012899 | Sep 2009 | DE |
| 1243925 | Sep 2002 | EP |
| 1371974 | Dec 2003 | EP |
| 1669749 | Jun 2006 | EP |
| 1870703 | Dec 2007 | EP |
| 1975246 | Oct 2008 | EP |
| S5870155 | Apr 1983 | JP |
| S62237349 | Oct 1987 | JP |
| H02250331 | Oct 1990 | JP |
| H02310931 | Dec 1990 | JP |
| H0580115 | Apr 1993 | JP |
| 2000055874 | Feb 2000 | JP |
| 2002221510 | Aug 2002 | JP |
| 2002272463 | Sep 2002 | JP |
| 2003279532 | Oct 2003 | JP |
| 2003322633 | Nov 2003 | JP |
| 2005515475 | May 2005 | JP |
| 2006138846 | Jun 2006 | JP |
| 2006284225 | Oct 2006 | JP |
| 2007243003 | Sep 2007 | JP |
| 2008215974 | Sep 2008 | JP |
| 200946904 | Nov 2009 | TW |
| WO-1999019717 | Apr 1999 | WO |
| WO-2003092325 | Nov 2003 | WO |
| WO-2004017068 | Feb 2004 | WO |
| WO-2004040291 | May 2004 | WO |
| WO-2004048962 | Jun 2004 | WO |
| WO-2004081234 | Sep 2004 | WO |
| WO-2005015156 | Feb 2005 | WO |
| WO-2005054431 | Jun 2005 | WO |
| WO-2005062049 | Jul 2005 | WO |
| WO-2005084367 | Sep 2005 | WO |
| WO-2005090961 | Sep 2005 | WO |
| WO-2006056226 | Jun 2006 | WO |
| WO-2007002204 | Jan 2007 | WO |
| WO-2008058282 | May 2008 | WO |
| WO-2008107014 | Sep 2008 | WO |
| WO-2008133719 | Nov 2008 | WO |
| WO-2009014155 | Jan 2009 | WO |
| WO-2009041917 | Apr 2009 | WO |
| WO-2010047804 | Apr 2010 | WO |
| WO-2010138186 | Dec 2010 | WO |
| WO-2012046137 | Apr 2012 | WO |
| WO-2012152308 | Nov 2012 | WO |
| WO-2014077783 | May 2014 | WO |
| Entry |
|---|
| Go et al, A CMOS-Based ISFET Chemical Imager With Auto-Calibration Capability, 2011, IEEE Sensors Journal, 11, 3253-3260 Post art. (Year: 2011). |
| A 16×16 CMOS Proton Camera Array for Direct Extracellular Imaging of Hydrogen-Ion Activity, 2008, MEMS and Sensors, session 32.8 (Year: 2008). |
| Ahmadian et al., “Single-nucleotide polymorphism analysis by pyrosequencing”, Analytical and Biochemistry, vol. 280, 2000, pp. 103-110. |
| Akiyama et al., “Ion-Sensitive Field-Effect Transistors with Inorganic Gate Oxide for pH Sensing”, IEEE Transactions on Electron Devices, vol. 29, No. 12, 1982, pp. 1936-1941. |
| Anderson et al., “A system for multiplexed direct electrical detection of DNA synthesis”, Sensors and Actuators B: Chemical, vol. 129, No. 1, Jan. 2008, pp. 79-86. |
| AU2011226767, Search Information Statement, dated Oct. 26, 2011, pp. 1-3. |
| Bandettini et al., “Processing Strategies for Time-Course Data Sets in Functional MRI of the Human Brain,” MRM, vol. 30, 1993, pp. 161-172. |
| Bandiera et al., “A fully electronic sensor for the measurement of cDNA hybridization kinetics”, Biosensors & Bioelectronics, vol. 22, Nos. 9-10, Apr. 15, 2007, pp. 2108-2114. |
| Barbaro et al., “A Charge-Modulated FET for Detection of Biomolecular Processes: Conception, Modeling, and Simulation”, IEEE Transactions on Electron Devices, vol. 53, No. 1, 2006, pp. 158-166. |
| Barbaro et al., “A CMOS, Fully Integrated Sensor for Electronic Detection of DNA Hybridization”, IEEE Electronic Device Letters, vol. 27, No. 7, 2006, pp. 595-597. |
| Barbaro et al., “Fully electronic DNA hybridization detection by a standard CMOS biochip”, Sensors and Actuators B: Chemical, vol. 118, 2006, pp. 41-46. |
| Bashford et al., “Automated bead-trapping apparatus and control system for single-molecule DNA sequencing”, Optics Express, vol. 16, No. 5, Mar. 3, 2008, pp. 3445-3455. |
| Baumann et al., “Microelectronic sensor system for microphysiological application on living cells”, Sensors and Actuators B: Chemical, vol. 55, No. 1, Apr. 1999, pp. 77-89. |
| Bausells et al., “Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology”, Sensors and Actuators B: Chemical, vol. 57, Nos. 1-3, 1999, pp. 56-62. |
| Beer et al., “Anion Recognition and Sensing: The State of the Art and Future Perspectives”, Angewandte Chemie International Edition, vol. 40, No. 3, Feb. 2001, pp. 487-516. |
| Bergveld, “ISFET, Theory and Practice”, IEEE Sensor Conference, Toronto, Oct. 2003, pp. 1-26. |
| Bergveld, “Thirty years of ISFETOLOGY What happened in the past 30 years and what may happen in the next 30 years”, Sensors and Actuators B: Chemical, vol. 88, No. 1, Jan. 2003, pp. 1-20. |
| Besselink et al., “ISFET Affinity Sensor”, Chapter 12 in Methods in Biotechnology, Affinity Biosensors: Techniques and Protocols, vol. 7, 1998, pp. 173-185. |
| Bobrov et al., “Chemical sensitivity of an ISFET with Ta205 membrane in strong acid and alkaline solutions”, Sensors and Actuators B: Chemical, vol. 3, No. 1, Jan. 1991, pp. 75-81. |
| Bockelmann et al., “Detecting DNA by field effect transistor arrays”, Proceedings of the 2006 IFIP International Conference on Very Large Scale Integration, 2006, pp. 164-168. |
| Bousse et al., “A process for the combined fabrication of ion sensors and CMOS circuits”, IEEE Electron Device Letters, vol. 9, No. 1, Jan. 1988, pp. 44-46. |
| Bousse et al., “Zeta potential measurements of Ta2O5 and SiO2 thin films” Journal of Colloid and Interface Science, vol. 147, No. 1, Nov. 1991, pp. 22-32. |
| Brenner et al., “Gene expression analysis by massively parallel signature sequencing (MPSS) on microbead arrays”, Nature Biotechnology, vol. 18, No. 6, Jun. 2000, pp. 630-634. |
| Brzozka et al., “Enhanced performance of potassium CHEMFETs by optimization of a polysiloxane membrane”, Sensors and Actuators B: Chemical, 18-19, 1994, pp. 38-41. |
| Chan et al., “An Integrated ISFETs Instrumentation System in Standard CMOS Technology”, IEEE Journal of Solid-State Circuits, vol. 45, No. 9, Sep. 2010, pp. 1923-1934. |
| Chen et al., “Silicon-based nanoelectronic field-effect pH sensor with local gate control”, Applied Physics Letter, vol. 89, Nov. 2006, pp. 223512-1-223512-3. |
| Chen et al., “Nanoscale field effect transistor for biomolecular signal amplification”, Applied Physics Letter, vol. 91, No. 24, Nov. 2007, pp. 243511-1-243511-3. |
| Chin et al., “Titanium Nitride Membrane Application to Extended Gate Field Effect Transistor pH Sensor Using VLSI Technology”, Japanese Journal of Applied Physics, vol. 40, Part 1, No. 11, Nov. 2001, pp. 6311-6315. |
| Chou et al., “Simulation of Ta2O5-gate ISFET temperature characteristics”, Sensor and Actuators B: Chemical, vol. 71, Nos. 1-2, Nov. 2000, pp. 73-76. |
| Chou et al., “Letter to the Editor on Simulation of Ta2O5-gate ISFET temperature characteristics”, Sensors and Actuators B: Chemical, vol. 80, 2001, pp. 290-291. |
| Chung et al., “ISFET interface circuit embedded with noise rejection capability”, Electronics Letters, vol. 40, No. 18, e-pub, 2 Pages, Sep. 2, 2004, pp. 1115-1116. |
| Chung et al., “ISFET performance enhancement by using the improved circuit techniques”, Sensors and Actuators B: Chemical, vol. 113, No. 1, Jan. 2006, pp. 555-562. |
| Chung et al., “New ISFET interface circuit design with temperature Compensation”, CiteSeerx—URL: http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.95.2321&rep=rep1-&type=pdf, 2006, pp. 1. |
| Chung et al., “New ISFET Interface Circuit Design with Temperature Compensation”, Microelectronics Journal, vol. 37, No. 10, Oct. 1, 2006, pp. 1105-1114. |
| Chung et al., “Temperature compensation electronics for ISFET readout applications”, Biomedical Circuits and Systems, IEEE International Workshop Singapore, Dec. 1, 2004, pp. 305-308. |
| Cobben et al., “Transduction of Selective Recognition of Heavy Metal Ions by Chemically Modified Field Effect Transistors (CHEMFETs)”,Journal of the American Chemical Society, vol. 114, No. 26, Dec. 1992, pp. 10573-10582. |
| Dazhong et al., “Research of CMOS Biosensor IC for Extracellular Electrophysiological Signal Recording and pH value Measuring”, Solid-State and Integrated-Circuit Technology, 9th International Conference, NJ USA, Oct. 20, 2008, pp. 2557-2560. |
| Dorf, “The Electrical Engineering Handbook”, University of California, Davis, CRC Press, 2 edition, Chapter 3—Linear Circuit Analysis, Jun. 25, 2004, pp. 3-1 to 3-66. |
| Eijkel et al., “Measuring Donnan-related phenomena using a solid-state ion sensor and a concentration-step method”, Journal of Membrane Science, vol. 127, May 1997, pp. 203-221. |
| Eijkel, “Potentiometric detection and characterization of adsorbed protein using stimulus-response measurement techniques”, Thesis, Sep. 3, 1955, pp. 1-147; pp. 160-192. |
| Eltoukhy et al., “A 0.18um CMOS 10-6 lux bioluminescence detection system-on-chip”, 2004 IEEE Inti Solid States Conference. Digest of Technical Papers. Session 12, Microsystems/12.3, Feb. 17, 2004. pp. 1-3. |
| Eltoukhy et al., “A. 0.18-um CMOS Bioluminescence Detection Lab-on-Chip”, IEEE Journal of Solid-State Circuits, vol. 41, No. 3, Apr. 2006, pp. 651-662. |
| EP09798251.6, Extended Search Report, dated Aug. 27, 2013, 6 pages. |
| EP09822323.3, Extended Search Report, dated May 27, 2015, 8 pages. |
| EP10780930.3, Search Report, dated Jun. 15, 2015, 3 pages. |
| EP10780935.2, Partial Search Report, dated Jun. 9, 2015, 5 pages. |
| EP10780935.2, Supplementary Search Report, dated Sep. 30, 2015. |
| EP10857377.5, Search Report, dated Jun. 26, 2015, 3 pages. |
| EP11801435.6, Search Report, dated Jul. 11, 2013, 2 pages. |
| EP11801437.2, Extended Search Report, dated Jul. 25, 2013, 10 pages. |
| EP11801439.8, Extended Search Report, dated Mar. 7, 2014, 9 pages. |
| EP11801447.1, Extended Search Report, dated Jun. 12, 2014, 13 pages. |
| EP11804218.3, Extended Search Report, dated Jul. 11, 2013, 3 pages. |
| EP11827128.7, Search Report, dated Aug. 1, 2013, 5 pages. |
| EP13161312.7, Extended Search Report, dated Oct. 15, 2013, 8 pages. |
| EP13163995.7, Extended Search Report, dated Aug. 20, 2013, 6 pages. |
| EP13164768.7, Extended Search Report, dated Aug. 20, 2013, 6 pages. |
| EP13174555.6, Search Report, dated Nov. 21, 2013, 5 pages. |
| EP13177039.8, Search Report, dated Nov. 21, 2013, 9 pages. |
| EP13177590.0, Search Report, dated Nov. 20, 2013, 5 pages. |
| EP14152861.2, Search Report, dated Jul. 7, 2014, 5 pages. |
| EP15170247.9, Search Report, dated Nov. 10, 2015, 4 pages. |
| Eriksson et al., “Pyrosequencing™ Technology at Elevated Temperature” Electrophoresis, vol. 25, No. 1, Jan. 2004, pp. 20-27. |
| Esfandyarpour et al., “Gate-controlled microfluidic chamber with magnetic bead for DNA sequencing-by-synthesis technology”, Proc 5th Intl Conf Nanochannels, Microchannels and Minichannels, Puebla, Mexico, Jun. 18-20, 2007, pp. 1-5. |
| Eversmann et al., “A 128.times.128 CMOS Biosensor Array for Extracellular Recording of Neural Activity”, IEEE J. Solid-State Circ., vol. 38, No. 12, Dec. 12, 2003, pp. 2306-2317. |
| Faramarzpour et al., “CMOS-Based Active Pixel for Low-Light Level Detection: Analysis and Measurements”, IEEE Trans Electron Devices, vol. 54, No. 12, Dec. 2007, pp. 3229-3237. |
| Finn et al., “Towards an Optimization of FET-Based Bio-Sensors”, European Cells and Materials, vol. 4, Sup 2, 2002, pp. 21-23. |
| Fraden, “Handbook of Modern Sensors—Physics, Designs, and Applications”, 17.3.2 CHEMFET Sensors, 1996, pp. 499-501. |
| Fritz et al., “Electronic detection of DNA by its intrinsic molecular charge”, Proceedings of the National Academy of Sciences, vol. 99, No. 22, Oct. 29, 2002, pp. 14142-14146. |
| Gardner et al., “Enhancing electronic nose performance by sensor selection using a new integer-based genetic algorithm approach”, Sensors and Actuators B: Chemical, vol. 106, No. 1, Apr. 2005, pp. 114-121. |
| GB0811656.8, Search Report, dated Mar. 12, 2010. |
| GB0811656.8, Search Report, dated Sep. 21, 2009. |
| GB0811657.6, Search Report, dated Oct. 26, 2009. |
| Gracia et al., “Test Structures for ISFET Chemical Sensors”, IEEE Proceedings of the 1992 International Conference on Microelectronic Test Structures, vol. 5, 1992, pp. 156-159. |
| Hammond et al., “A System-on-Chip Digital PH Meter for Use in a Wireless Diagnostic Capsule”, IEEE Transactions on Biomedical Engineering, vol. 52, No. 4, May 2005, pp. 687-694. |
| Hammond et al., “Design of a Single-Chip pH Sensor Using a Conventional 0.6-.mu.m CMOS Process”, IEEE Sensors Journal, vol. 4, No. 6, 2004, pp. 706-712. |
| Hammond et al., “Encapsulation of a liquid-sensing microchip using SU-8 photoresist”, MicroElectronic Engineering, vols. 73-74, Jun. 2004, pp. 893-897. |
| Hammond et al., “Genomic sequencing and analysis of a Chinese Hamster ovary cell line using Illumina sequencing technology”, BMC Genomics, vol. 12, No. 67, Jan. 2011, pp. 1-8. |
| Hammond et al., “Performance and system-on-chip integration of an unmodified CMOS ISFET”, Sensors and Actuators B: Chemical, vols. 111-112, Nov. 2005, pp. 254-258. |
| Han et al., “Detection of DNA hybridization by a field-effect transistor with covalently attached catcher molecules”, Surface and Interface Analysis, vol. 38, No. 4,, Apr. 2006, pp. 176-181. |
| Han “Label-free detection of biomolecules by a field-effect transistor microarray biosensor with bio-functionalized gate surfaces,” Masters Dissertation, RWTH Aachen University, 2006, pp. 1-63. |
| Hanshaw et al., “An indicator displacement system for fluorescent detection of phosphate oxyanions under physiological conditions”, Tetrahedron Letters, vol. 45, No. 47, Nov. 15, 2004, pp. 8721-8724. |
| Hara et al., “Dynamic response of a Ta2O5-gate pH-sensitive field-effect transistor”, Sensors Actuators B: Chemical, vol. 32, No. 2, May 1996, pp. 115-119. |
| Hermon et al., “Miniaturized bio-electronic hybrid for chemical sensing applications”, Tech Connect News, Apr. 22, 2008, pp. 1. |
| Hideshima et al., “Detection of tumor marker in blood serum using antibody-modified field effect transistor with optimized BSA blocking”, Sensors and Actuations B: Chemical, vol. 161, No. 1, Jan. 2012, pp. 146-150. |
| Hijikata et al., “Identification of a Single Nucleotide Polymorphism in the MXA Gene Promoter (T/T at nt-88) Correlated with the Response of Hepatitis C Patients to Interferon”, Intervirology, vol. 43, No. 2, 2000, pp. 124-127. |
| Hizawa et al., “32.times.32 pH Image Sensors for Real Time Observation of Biochemical Phenomena”, Transducers & Eurosensors '07, 14th Intl. Conf. on Solid-State, Actuators and Microsystems, Lyon, France, Jun. 10-14, 2007, pp. 1311-1312. |
| Hizawa, et al., “Sensing Characteristics of Charge Transfer Type pH Sensor by Accumulative Operation”, IEEE Sensors, EXCO, Daegu, Korea, Oct. 22-25, 2006, pp. 144-147. |
| Hizawa et al., “Fabrication of a two-dimensional pH image sensor using a charge transfer technique”, Sensors and Actuators B: Chemical, vol. 117, No. 2, Oct. 2006, pp. 509-515. |
| Ingebrandt et al., “Label-free Detection of DNA using Field-Effect Transistors”, Physica status solidi A, vol. 203, No. 14, Nov. 2006, pp. 3399-3411. |
| Izuru, “Kojien”, published by Owanami, Fourth Edition, 1991, pp. 2683. |
| Jakobson et al., “Low frequency noise and drift in Ion Sensitive Field Effect Transistors”, Sensors Actuators B: Chemical, vol. 68, Nos. 1-3, Aug. 2000, pp. 134-139. |
| Ji et al., “A CMOS contact imager for locating individual cells”, IEEE International Symposium on Circuits and Systems, 2006, pp. 3357-3360. |
| Ji et al., “Contact Imaging: Simulation and Experiment”, IEEE Trans Circuits Systems-I: Regular Papers, vol. 54, No. 8, 2007, pp. 1698-1710. |
| Kim et al., “An FET-type charger sensor for highly sensitive detection of DNA sequence”, Biosensors & Bioelectronics, vol. 20, No. 1, Jul. 30, 2004, pp. 69-74. |
| Klein, “Time effects of ion-sensitive field-effect transistors”, Sensors and Actuators, vol. 17, Nos. 1-2, May 1989, pp. 203-208. |
| Koch et al., “Protein detection with a novel ISFET-based zeta potential analyzer”, Biosensors & Bioelectronics, vol. 14, No. 4, Apr. 1999, pp. 413-421. |
| Krause et al., “Extended Gate Electrode Arrays for Extracellular Signal Recordings”, Sensors and Actuators B: Chemical, vol. 70, Nos. 1-3, Nov. 2000, pp. 101-107. |
| Kruise et al., “Detection of protein concentrations using a pH-step titration method”, Sensors Actuators B: Chemical, vol. 44, Nos. 1-3, Oct. 1997, pp. 297-303. |
| Leamon et al., “A Massively Parallel PicoTiterPlate Based Platform for Discrete Picoliter—Scale Polymerase Chain Reactions”, Electrophoresis, vol. 24, No. 21, Nov. 24, 2003, pp. 3769-3777. |
| Leamon et al., “Cramming More Sequencing Reactions onto Microreactor Chips”, Chemical Reviews, vol. 107, No. 8, Aug. 2007, pp. 3367-3376. |
| Lee et al. “An Enhanced Glucose Biosensor Using Charge Transfer Techniques” Biosensors & Bioelectronics, vol. 24, No. 4, Dec. 2008, pp. 650-656. |
| Lee et al., “Ion-sensitive Field-Effect Transistor for Biological Sensing”, Sensors, vol. 9, No. 9, 2009, pp. 7111-7131. |
| Li et al., “Sequence-Specific Label-Free DNA Sensors based on Silico Nanowires”, Nano Letters, vol. 4, No. 2, Jan. 2004, pp. 245-247. |
| Ligler et al., “Array biosensor for detection of toxins”, Analytical and Bioanalytical Chemistry, vol. 377, No. 3, Oct. 2003, pp. 469-477. |
| Lin et al., “Practicing the Novolac deep-UV portable conformable masking technique”, Journal of Vacuum Science and Technology, vol. 19, No. 4, 1981, pp. 1313-1319. |
| Liu et al., “An ISFET based sensing array with sensor offset compensation and pH sensitivity enhancement”, IEEE International Symposium on Circuits and Systems, Jun. 2, 2010, pp. 2283-2286. |
| Lohrengel et al., “A new microcell or microreactor for material surface investigations at large current densities”, Electrochimica Acta, vol. 49, Nos. 17-18, Jul. 2004, pp. 2863-2870. |
| Lui et al., “A Test Chip for ISFET/CMNOS Technology Development”, IEEE International Conference on Microelectronic Test Structures, vol. 9, 1996, pp. 123-128. |
| Maki et al., “Nanowire-transistor based ultra-sensitive DNA methylation detection”, Biosensors & Bioelectronics, vol. 23, No. 6, Jan. 2008, pp. 780-787. |
| Margulies et al., “Genome Sequencing in Microfabricated High-Density Picolitre Reactors”, Nature, vol. 437, No. 15, 2005, pp. 376-380. |
| Marshall et al., “DNA chips: an array of possibilities”, Nature Biotechnology, vol. 16, No. 1, Jan. 1998, pp. 27-31. |
| Martel et al., “Single and multi-wall carbon nanotube field effect transistors”, Applied Physics Letters, vol. 73, No. 17, Oct. 1998, pp. 2447-2449. |
| Martinoia et al., “A behavioral macromodel of the ISFET in SPICE”, Sensors and Actuators B: Chemical, vol. 62, No. 3, Mar. 2000, pp. 182-189. |
| Martinoia et al., “Development of ISFET Array-Based Microsystems for Bioelectrochemical measurements of cell populations”, Biosensors & Bioelectronics, vol. 16, Nos. 9-12, Dec. 2001, pp. 1043-1050. |
| Matsuo et al. “Charge Transfer Type pH Sensor with Super High Sensitivity” 14th International Conference on Solid-State Sensors Actuators and Microsystems, France, Jun. 10-14, 2007, pp. 1881-1884. |
| Matula, “Electrical Resistivity of Copper, Gold, Palladium, and Silver”, Journal of Physical and Chemical Reference Data, vol. 8, No. 4, 1979, pp. 1147-1298. |
| Medoro et al., “A Lab-on-Chip for Cell Detection and Manipulation”, IEEE Sensors Journal, vol. 3, No. 3, 2003, pp. 317-325. |
| Meyburg et al., “N-Channel field-effect transistors with floating gates for extracellular recordings”, Biosensors and Bioelectronics, vol. 21, No. 7, Jan. 15, 2006, pp. 1037-1044. |
| Milgrew et al., “A 16×16 CMOS proton camera array for direct extracellular imaging of hydrogen-ion activity”, IEEE Inti Solid-State Circuits Conference, Session 32:24, 2008, pp. 590-591,638. |
| Milgrew et al., “A large transistor-based sensor array chip for direct extracellular imaging”, Sensors and Actuators B: Chemical, vols. 111-112, Nov. 2005, pp. 347-353. |
| Milgrew et al., “A Proton Camera Array Technology for Direct Extracellular lon Imaging”, IEEE International Symposium on Industrial Electronics, 2008, pp. 2051-2055. |
| Milgrew et al., “Matching the transconductance characteristics of CMOS ISFET arrays by removing trapped charge”, IEEE Transactions on Electronic Devices, vol. 55, No. 4, 2008, pp. 1074-1079. |
| Milgrew et al., “Microsensor Array Technology for Direct Extracellular Imaging”, Dept Electronic and EE, University of Glasgow, Apr. 5, 2006, pp. 1-23. |
| Milgrew et al., “The Development of Scalable Sensor Arrays Using Standard CMOS Technology”, Sensors and Actuators B: Chemical, vol. 103, Nos. 1-2, Sep. 2004, pp. 37-42. |
| Milgrew et al., “The fabrication of scalable multi-sensor arrays using standard CMOS technology”, IEEE Custom Integrated Circuits Conference, 2003, pp. 513-516. |
| Miyahara et al., “Biochip Using Micromachining Technology”, Journal of Institute of Electrostatics, Japan, vol. 27, No. 6, 2003, pp. 268-272. |
| Miyahara et al., “Direct Transduction of Primer Extension into Electrical Signal Using Genetic Field Effect Transistor”, Micro Total Analysis Systems, vol. 1, Proceedings of UTAS 2004, 8th International Conference on Miniaturized Systems for Chemistry and Life Sciences, Malmo, Sweden, Sep. 26-30, 2004, pp. 303-305. |
| Miyahara et al., “Potentiometric Detection of DNA Molecules Using Field Effect Transistor”, The Japan Society of Applied Physics, No. 3, 2003, pp. 1180, 30A-S2. |
| Morgenshtein et al., “Wheatstone-Bridge readout interface for ISFET/REFET applications”, Sensors and Actuators B: Chemical, vol. 98, No. 1, Mar. 2004, pp. 18-27. |
| Moriizumi, “Biosensors”, Oyo Buturi (monthly publication of the Japan Society of Applied Physics), vol. 54, No. 2, Feb. 10, 1985, pp. 98-114. |
| Naidu et al., “Introduction to Electrical Engineering”, Chapter 1—Fundamental Concepts of Electricity, McGraw Hill Education (India) Private Limited, 1995, pp. 1-10. |
| Nakazato, “An Integrated ISFET Sensor Array”, Sensors, Nov. 2009, vol. 9, No. 11, ISSN:1424-8220, [online], Internet, URL, http://www.mdpi.com/1424-8220/9/11/8831/pdf, Nov. 2009, pp. 8831-8851. |
| Nakazato et al., “28p-Y-7 ISFET sensor array integrated circuits based on the standard CMOS process”, The 55th annual meeting of the Japan Society of Applied Physics, Book of Abstracts, Mar. 27, 2008, p. 70. |
| Neaman, “Electronic Circuit Analysis and Design”, McGraw Hill Higher Education, 2nd Edition, Chapter 6—Basic FET Amplifiers, (reference will be uploaded in 2 parts due to size) part 1 of 2, Dec. 1, 2000, pp. 313-345. |
| Neaman, “Electronic Circuit Analysis and Design”, McGraw Hill Higher Education, 2nd Edition, Chapter 6—Basic FET Amplifiers, (reference will be uploaded in 2 parts due to size) part 2 of 2, Dec. 1, 2000, pp. 346-381. |
| Nishiguchi et al., “Si nanowire ion-sensitive field-effect transistors with a shared floating gate”, Applied Physics Letters, vol. 94, Apr. 2009, pp. 163106-1 to 163106-3. |
| Nyren et al., “Enzymatic Method for Continuous Monitoring of Inorganic Pyrophosphate Synthesis”, Analytical Biochemistry, vol. 151, No. 2, Dec. 1985, pp. 504-509. |
| Oelßner et al., “Encapsulation of ISFET sensor chips”, Sensors Actuators B: Chemical, vol. 105, No. 1, Feb. 2005, pp. 104-117. |
| Oelßner et al., “Investigation of the dynamic response behavior of ISFET pH sensors by means of laser Doppler velocimetry (LDV)”, Sensors and Actuators B: Chemical, vol. 27, Nos. 1-3, Jun. 1995, pp. 345-348. |
| Offenhausser et al., “Field-Effect transistor array for monitoring electrical activity from mammalian neurons in culture”, Biosensors & Bioelectronics, vol. 12, No. 8, Jan. 1997, pp. 819-826. |
| Ohno et al., “Electrolyte-Gated Graphene Field-Effect Transistors for Detecting pH and Protein Adsorption”, Nano Letters, vol. 9, No. 9, Jul. 28, 2009, pp. 3318-3322. |
| Palan et al., “New ISFET sensor interface circuit for biomedical applications”, Sensors and Actuators B: Chemical, vol. 57, Nos. 1-3, Sep. 1999, pp. 63-68. |
| Park et al., “ISFET glucose sensor system with fast recovery characteristics by employing electrolysis”, Sensors and Actuators B: Chemical, vol. 83, Nos. 1-3, Mar. 15, 2002, pp. 90-97. |
| Patolsky et al., “Nanowire-Based Biosensors”, Analytical Chemistry, vol. 78, No. 13, Jul. 1, 2006, pp. 4261-4269. |
| PCT/JP2005/001987, Search Report, dated Apr. 5, 2005. |
| PCT/JP2005/015522, Preliminary Report on Patentability, dated Mar. 19, 2007. |
| PCT/JP2005/015522, Search Report and Written Opinion, dated Sep. 27, 2005. |
| PCT/JP2005/015522, Search Report, dated Sep. 27, 2005. |
| PCT/US2007/025721, Declaration of Non-Establishment of International Search Report, dated Jul. 15, 2008. |
| PCT/US2007/025721, Preliminary Report and Written Opinion on Patentability, dated Jun. 16, 2009. |
| PCT/US2007/025721, Search Report and Written Opinion, dated Jun. 16, 2009. |
| PCT/US2009/003766, Preliminary Report on Patentability, dated Jan. 5, 2011. |
| PCT/US2009/003766, Search Report, dated Apr. 8, 2010. |
| PCT/US2009/003797, Search Report and Written Opinion, dated Mar. 12, 2010. |
| PCT/US2009/005745, Preliminary Report on Patentability, dated Apr. 26, 2011. |
| PCT/US2009/005745, Search Report and Written Opinion, dated Dec. 11, 2009. |
| PCT/US2010/001543, Preliminary Report on Patentability, dated Nov. 29, 2011. |
| PCT/US2010/001543, Search Report and Written Opinion, dated Oct. 13, 2010. |
| PCT/US2010/001547, Preliminary Report on Patentability, dated Nov. 29, 2011. |
| PCT/US2010/001547, Search Report and Written Opinion, dated Aug. 5, 2010. |
| PCT/US2010/001553, Preliminary Report on Patentability, dated Dec. 8, 2011. |
| PCT/US2010/001553, Search Report and Written Opinion, dated Jul. 28, 2010. |
| PCT/US2010/048835, Preliminary Report on Patentability, dated Mar. 19, 2013. |
| PCT/US2010/048835, Search Report and Written Opinion, dated Dec. 16, 2010. |
| PCT/US2011/042655, Search Report and Written Opinion, dated Oct. 21, 2011. |
| PCT/US2011/042660, Search Report, dated Nov. 2, 2011. |
| PCT/US2011/042665, Search Report, dated Nov. 2, 2011. |
| PCT/US2011/042668, Preliminary Report on Patentability, dated Mar. 26, 2013. |
| PCT/US2011/042668, Search Report and Written Opinion, dated Oct. 28, 2011. |
| PCT/US2011/042668, Search Report, dated Oct. 28, 2011. |
| PCT/US2011/042669, Search Report and Written Opinion, dated Jan. 9, 2012. |
| PCT/US2011/042683, Preliminary Report on Patentability, dated Jun. 4, 2013. |
| PCT/US2011/042683, Search Report and Written Opinion, dated Feb. 16, 2012. |
| PCT/US2012/058996, Search Report and Written Opinion, dated Jan. 22, 2013. |
| PCT/US2012/071471, Preliminary Report on Patentability, dated Jun. 24, 2014. |
| PCT/US2012/071471, Search Report and Written Opinion, dated Apr. 24, 2013. |
| PCT/US2012/071482, Preliminary Report on Patentability, dated Jun. 24, 2014. |
| PCT/US2012/071482, Search Report and Written Opinion, dated May 23, 2013. |
| PCT/US2013/022129, Preliminary Report on Patentability, dated Jul. 22, 2014. |
| PCT/US2013/022129, Search Report and Written Opinion, dated Aug. 9, 2013. |
| PCT/US2013/022140, Preliminary Report on Patentability, dated Jul. 22, 2014. |
| PCT/US2013/022140, Search Report and Written Opinion, dated May 2, 2013. |
| PCT/US2014/020887, Preliminary Report, dated Sep. 15, 2015, 8 pages. |
| PCT/US2014/020887, Search Report and Written Opinion, dated May 30, 2014. |
| PCT/US2014/020892, Search Report and Written Opinion, dated Jun. 3, 2014. |
| PCT/US2014/040923, Preliminary Report on Patentability, dated Dec. 15, 2015. |
| PCT/US2014/040923, Search Report and Written Opinion, dated Sep. 1, 2014. |
| PCT/US2015/066052, Search Report and Written Opinion, dated Apr. 7, 2016. |
| Poghossian et al., “Functional testing and characterization of ISFETs on wafer level by means of a micro-droplet cell”, Sensors, vol. 6, No. 4, Apr. 2006, pp. 397-404. |
| Pollack et al., “Genome-wide analysis of DNA copy-number changes using cDNA microarrays”, Nature Genetics, vol. 23, No. 1, Sep. 1999, pp. 41-46. |
| Pourmand et al., “Direct electrical detection of DNA synthesis”, Proceedings of the National Academy of Sciences, vol. 103, No. 17, Apr. 2006, pp. 6466-6470. |
| Pouthas et al., “Spatially resolved electronic detection of biopolymers”, Physical Review, vol. 70, No. 3, Sep. 2004, pp. 031906-1-031906-8. |
| Premanode et al., “A composite ISFET readout circuit employing current feedback”, Sensors Actuators B: Chemical, vol. 127, No. 2, Nov. 2007, pp. 486-490. |
| Premanode et al., “A novel, low power biosensor for real time monitoring of creatinine and urea in peritoneal dialysis”, Sensors and Actuators B: Chemical, vol. 120, No. 2, Jan. 2007, pp. 732-735. |
| Premanode et al., “Drift Reduction in Ion-Sensitive FETs using correlated double sampling”, Electronics Letters, vol. 43, No. 16, Aug. 2, 2007, pp. 857-859. |
| Premanode et al., “Ultra-low power precision ISFET readout using global current feedback”, Electronic Letters, vol. 42, No. 22, Oct. 26, 2006, pp. 1264-1265. |
| Purushothaman et al., “Protons and single nucleotide polymorphism detection: A simple use for the Ion Sensitive Field Effect Transistor”, Sensors and Actuators B: Chemical, vol. 114, No. 2, Apr. 2006, pp. 964-968. |
| Purushothaman et al., “Towards Fast Solid State DNA Sequencing”, IEEE ISCAS Proceedings, Circuits and Systems, vol. 4, 2002, pp. IV-169-IV-172. |
| Rodriguez-Villegas, “Solution to trapped charge in FGMOS transistors”, Electronics Letters, vol. 39, No. 19, Oct. 2003, pp. 1416-1417. |
| Ronaghi et al., “A Sequencing Method Based on Real-Time Pyrophosphate”, Science, vol. 281, No. 5375, Jul. 1998, pp. 363-365. |
| Rothberg et al., “An integrated semiconductor device enabling non-optical genome sequencing”, Nature, vol. 475, No. 7356, Jul. 21, 2011, pp. 348-352. |
| Rowe et al., “An Array Immunosensor for Simultaneous Detection of Clinical Analytes”, Analytical Chemistry, vol. 71, No. 2, 1999, pp. 433-439. |
| Sakata et al., “Cell-based field effect devices for cell adhesion analysis”, Intl. Conf. on Microtechnologies in Medicine and Biology, May 9-12, 2006, Okinawa, Japan, 2006, pp. 177-179. |
| Sakata et al., “Detection of DNA recognition events using multi-well field effect transistor”, Biosensors & Bioelectronics, vol. 21, 2005, pp. 827-832. |
| Sakata et al., “Detection sensitivity of genetic field effect transistor combined with charged nanoparticle-DNA conjugate”, Intl. Conf. on Microtechnologies in Medicine and Biology, May 9-12, 2005, Okinawa, Japan, 2006, pp. 97-100. |
| Sakata et al., “Direct detection of single nucleotide polymorphism using genetic field effect transistor”, International Microprocesses and Nanotechnology Conference. Oct. 26-29, 2004. Osaka, Japan. Digest of Papers Microprocesses and Nanotechnology 2004. pp. 226-227. |
| Sakata et al., “Direct Detection of Single-Base Extension Reaction Using Genetic Field Effect Transistor”, Proc. of 3rd Ann. Intl. IEEE EMBS Special Topic Conf. on Microtechnologies in Medicine and Biology, Kahuku, Oahu, HI, May 12-15, 2005, pp. 219-222. |
| Sakata et al., “Direct transduction of allele-specific primer extension into electrical signal using genetic field effect transistor”, Biosensors & Bioelectronics, vol. 22, 2007, pp. 1311-1316. |
| Sakata et al., “DNA Analysis Chip Based on Field-Effect Transistors”, Japanese Journal of Applied Physics, vol. 44, No. 4B, 2005, pp. 2854-2859. |
| Sakata et al., “DNA Sequencing Based on Intrinsic Molecular Charges”, Angewandte Chemie International, vol. 118, 2006, pp. 2283-2286. |
| Sakata et al., “DNA Sequencing Based on Intrinsic Molecular Charges”, Angewandte Chemie International, vol. 45, No. 14, Mar. 27, 2006, pp. 2225-2228. |
| Sakata et al, “DNA Sequencing Using Genetic Field Effect Transistor”, 13th International Conference on Solid-State sensors, Actuators and Microsystems, vol. 2, Jun. 5-9, 2005, Seoul, Korea, pp. 1676-1679. |
| Sakata et al., “Immobilization of oligonucleotide probes on Si3N4 surface and its application to genetic field effect transistor”, Materials Science and Engineering: C, vol. 24, Nos. 6-8, Dec. 2004, pp. 827-832. |
| Sakata et al., “Potential Behavior of Biochemically Modified Gold Electrode for Extended-Gate Field-Effect Transistor”, Japanese Journal of Applied Physics, vol. 44, Part 1, No. 4S, Apr. 2005, pp. 2860-2863. |
| Sakata et al., “Potential response of genetic field effect transistor to charged nanoparticle-DNA conjugate”, International Microprocesses and Nanotechnology Conference. Oct. 25-28, 2005. Tokyo, Japan. Digest of Papers Microprocesses and Nanotechnology 2005. pp. 42-43. |
| Sakata et al., “Potentiometric Detection of Allele Specific Oligonucleotide Hybridization Using Genetic Field Effect Transistor”, Micro Total Analysis Systems, vol. 1,8th Intl. Conf. on Miniaturized Systems for Chemistry and Life Sciences, Sep. 26-30, 2004, Malmo, Sweden, pp. 300-302. |
| Sakata et al., “Potentiometric Detection of DNA Molecules Hybridization Using Gene Field Effect Transistor and Intercalator”, Materials Research Society Symposium Proceedings, vol. 782, Micro- and Nanosystems, Boston, Massachusetts, Jan. 2003, pp. 393-398. |
| Sakata et al., “Potentiometric Detection of DNA Using Genetic Transistor”, Denki Gakkai Kenkyukai Shiryo Chemical Sensor Kenkyukai, CHS-03-51-55, 2003, pp. 1-5. |
| Sakata et al., “Potentiometric Detection of Single Nucleotide Polymorphism by Using a Genetic Field-effect transistor”, ChemBioChem, vol. 6, No. 4, Apr. 2005, pp. 703-710. |
| Sakurai et al., “Real-Time Monitoring of DNA Polymerase Reactions by a Micro ISFET pH Sensor”, Analytical Chemistry, vol. 64, No. 17, Sep. 1992, pp. 1996-1997. |
| Salama, “Cmos luminescence detection lab-on-chip: modeling, design, and characterization”, Thesis, Presented at Stanford University, 2005, pp. ii-78. |
| Salama, “Modeling and simulation of luminescence detection platforms”, Biosensors & Bioelectronics, vol. 19, No. 11, Jun. 15, 2004, pp. 1377-1386. |
| Sawada et al., “A novel fused sensor for photo- and ion-sensing”, Sensors and Actuators B: Chemical, vol. 106, No. 2, May 2005, pp. 614-618. |
| Sawada et al., “Highly sensitive ion sensors using charge transfer technique”, Sensors and Actuators B: Chemical, vol. 98, No. 1, Mar. 2004, pp. 69-72. |
| Schasfoort et al., “A new approach to immunoFET operation”, Biosensors & Bioelectronics, vol. 5, No. 2, 1990, pp. 103-124. |
| Schasfoort et al., “Field-effect flow control for microfabricated fluidic networks”, Science, vol. 286. No. 5441, Oct. 29, 1999, pp. 942-945. |
| Schoning et al., “Bio FEDs (Field-Effect Devices): State-of-the-Art and New Directions”, Electroanalysis, vol. 18, Nos. 19-20, Sep. 2006, pp. 1893-1900. |
| Schoning et al., “Recent advances in biologically sensitive field-effect transistors (BioFETs)”, Analyst, vol. 127, No. 9, 2002, pp. 1137-1151. |
| Schroder, “6. Oxide and Interface Trapped Charges, Oxide Thickness”, Semiconductor Material and Device Characterization, John Wiley & Sons, ISBN: 978-0-471-73906-7, Feb. 2006, pp. 319-387. |
| Seong-Jin et al. “Label-Free CMOS DNA Quantification With On-Chip Noise Reduction Schemes” Solid-State Sensors, Actuators and Microsystems Conference, IEEE, Jun. 10, 2013, pp. 947-950. |
| Shah, “Microfabrication of a parellelrray DNA pyrosequencing chip”, NNIN REU Research Accomplishments, 2005, pp. 130-131. |
| Shepherd et al., “A biochemical translinear principle with weak inversion ISFETs”, IEEE Trans Circuits Syst—I, vol. 52, No. 12, Dec. 2005, pp. 2614-2619. |
| Shepherd et al., “A novel voltage-clamped CMOS ISFET sensor interface”, IEEE, 2007, pp. 3331-3334. |
| Shepherd et al., “Towards direct biochemical analysis with weak inversion ISFETS”, Intl Workshop on Biomedical, 2004, pp. S1.5-5-S1.5-8. |
| Shepherd et al., “Weak inversion ISFETs for ultra-low power biochemical sensing and real-time analysis”, Sensors Actuators B, vol. 107, 2005, pp. 468-473. |
| Shi et al., “Radical Capillary Array Electrophoresis Microplace and Scanner for High-Performance Nucleic Acid Analysis”, Analytical Chemistry, vol. 71, No. 23, 1999, pp. 5354-5361. |
| Sia et al., “Microfluidic devices fabricated in poly(dimethylsiloxane) for biological studies”, Electrophoresis, vol. 24, No. 21, Nov. 2003, pp. 3563-3576. |
| Sibbald et al., “A miniature flowthrough cell with a four-function ChemFET integrated circuit for simultaneous measurements of potassium, hydrogen, calcium and sodium ions”, Analytica chimica acta., 159, 1984, pp. 47-62. |
| Simonian et al., “FET based biosensors for the direct detection of organophosphate neurotoxins”, Electroanalysis, vol. 16, No. 22, 2004, pp. 1896-1906. |
| Souteyrand et al., “Direct detection of the hybridization of synthetic homo-oligomer DNA sequences by field effect”, Journal of Physical Chemistry B, vol. 101, No. 15, 1997, pp. 2980-2985. |
| Starodub et al., “Immunosensor for the determination of the herbicide simazine based on an ion-selective field-effect transistor”, Analytica Chimica Acta, vol. 424, No. 1, Nov. 2000, pp. 37-43. |
| Takenaka et al., “DNA Sensing on a DNA Probe-Modified Electrode Using Ferrocenylnaphthalene Dimide as the Electrochemically Active Ligand”, Analytical Chemistry, vol. 72. No. 6, 2000, pp. 1334-1341. |
| Temes et al., “A Tutorial Discussion of the Oversampling Method for A/D and D/A Conversion”, IEEE International Symposium on Circuits and Systems, vols. 2 of 4, 1990, 5 pages. |
| Terada et al., “Further Study of Vth-Mismatch Evaluation Circuit”, f IEEE Int. Conference on Microelectronic Test Structures, vol. 17, Mar. 22, 2004, pp. 155-159. |
| Thewes et al., “CMOS-based Biosensor Arrays”, Proceedings of the Design, Automation and Test in Europe Conference and Exhibition, 2005, 2 pages. |
| Tokuda et al., “A CMOS image sensor with optical and potential dual imaging function for on-chip bioscientific applications”, Sensors and Actuators A: Physical, vol. 125, No. 2, Jan. 2006, pp. 273-280. |
| Tomaszewski et al., “Electrical characterization of ISFETs”, Journal of Telecommunications and Information Technology, Mar. 2007, pp. 55-60. |
| Toumazou et al., “Using transistors to linearise biochemistry,” Electronics Letters, vol. 43, No. 2, Jan. 18, 2007, 3 pages. |
| Truman et al. “Monitoring liquid transport and chemical composition in lab on a chip systems using ion sensitive FET devices”, Lab on a Chip, vol. 6, No. 9, Jul. 2006, pp. 1220-1228. |
| Unger et al., “Monolithic Microfabricated Valves and Pumps by Multilayer Soft Lithography”, Science, vol. 288, No. 5463, Apr. 2000, pp. 113-116. |
| Unknown, “ISFET Wikipedia article”, Wikipedia, Last modified Nov. 7, 2006. |
| Unknown, “OV5640 Datasheet Product Specification”, ¼″ color CMOS QSXGA (5 megapixel) image sensor with OmniBSI technology. May 1, 2011, p. 1, line 9 and pp. 2-7, paragraph 1. |
| Uslu et al., “Labelfree fully electronic nucleic acid detection system based on a field-effect transistor device”, Biosensors and Bioelectronics, vol. 19. No. 12, Jul. 2004, pp. 1723-1731. |
| Van Der Schoot et al., “The Use of a Multi-ISFET Sensor Fabricated in a Single Substrate”, Sensors and Actuators, vol. 12, No. 4, Nov.-Dec. 1987, pp. 463-468. |
| Van Der Wouden et al., “Directional flow induced by synchronized longitudinal and zeta-potential controlling AC-electrical fields”, Lab Chip, vol. 6, No. 10, Oct. 2006, pp. 1300-1305. |
| Van Hal et al., “A general model to describe the electrostatic potential at electrolyte oxide interfaces”, Advances in Colloid and Interface Science, vol. 69, Nos. 1-3, Dec. 1996, pp. 31-62. |
| Van Kerkhof, “Development of an ISFET based heparin sensor using the ion-step measuring method”, Biosensors & Bioelectronics, vol. 8, Nos. 9-10, 1993, pp. 463-472. |
| Van Kerkhof et al., “ISFET Responses on a stepwise change in electrolyte concentration at constant pH”, Sensors Actuators B: Chemical, vol. 18-19, Mar. 1994, pp. 56-59. |
| Van Kerkhof et al., “The development of an ISFET-based heparin sensor,” Thesis 1994. Published Aug. 10, 1965. |
| Van Kerkhof et al., “The ISFET based heparin sensor with a monolayer of protamine as affinity ligand”, Biosensors & Bioelectronics, vol. 10, Nos. 3-4, 1995, pp. 269-282. |
| Vardalas, “Twists and Turns in the Development of the Transistor”, IEEE—USA Today's Engineer Online, May 2003, 6 pages. |
| Voigt et al., “Diamond-like carbon-gate pH-ISFET”, Sensors and Actuators B: Chemical, vol. 44, Nos. 1-3, Oct. 1997, pp. 441-445. |
| Wagner et al., “All-in-one solid-state device based on a light-addressable potentiometric sensor platform”, Sensors and Actuators B: Chemical, vol. 117, No. 2, Oct. 2006, pp. 472-479. |
| Wang et al., “Label-free detection of small-molecule-protein interactions by using nanowire nanosensors”, Proceedings of the National Academy of Sciences, vol. 102, No. 9, Mar. 2005, pp. 3208-3212. |
| Wilhelm et al., “pH Sensor Based on Differential Measurements on One pH-FET Chip”, Sensors and Actuators B: Chemical, vol. 4, Nos. 1-2, May 1991, pp. 145-149. |
| Woias et al., “Slow pH response effects of silicon nitride ISFET sensors”, Sensors and Actuators B: Chemical, vol. 48, Nos. 1-3, May 1998, pp. 501-504. |
| Woias, “Modelling the short time response of ISFET sensors”, Sensors and Actuators B: Chemical, vol. 24, Nos. 1-3, Mar. 1995, pp. 211-217. |
| Wood et al., “Base composition-independent hybridization in tetramethylammonium chloride: a method for oligonucleotide screening of highly complex gene libraries”, Proceedings of the National Academy of Sciences, vol. 82, No. 6, Mar. 1985, pp. 1585-1588. |
| Wu et al., “DNA and protein microarray printing on silicon nitride waveguide surfaces”, Biosensensors & Bioelectronics, vol. 21, No. 7, Jan. 2006, pp. 1252-1263. |
| Xu et al., “Analytical Aspects of FET-Based Biosensors”, Frontiers in Bioscience, vol. 10, Jan. 2005, pp. 420-430. |
| Yeow et al., “A very large integrated pH-ISFET sensor array chip compatible with standard CMOS processes”, Sensor and Actuators B: Chemical, vol. 44, Nos. 1-3, Oct. 1997, pp. 434-440. |
| Yoshida et al., “Development of a Wide Range pH Sensor based on Electrolyte-Insulator-Semiconductor Structure with Corrosion-Resistant Al2O3—Ta2O5 and Al2O3—ZrO2”, Journal of the Electrochemical Society, vol. 151, No. 3, 2004, pp. H53-H58. |
| Yuqing et al., “Ion sensitive field effect transducer-based biosensors”, Biotechnology Advances, vol. 21, No. 6, Sep. 2003, pp. 527-534. |
| Zhang et al., “32-Channel Full Customized CMOS Biosensor Chip for Extracellular neural Signal Recording”, Proc. of the 2nd Intl. IEEE EMBs Conf. on Neural Engineering, Arlington, Virginia, Mar. 16-19, 2005, pp. v-viii. |
| Zhao et al., “Floating-Gate Ion Sensitive Field-Effect Transistor for Chemical and Biological Sensing”, MRS Proceedings, vol. 828, 2005, pp. 349-354. |
| Zhou et al., “Quantitative detection of single nucleotide polymorphisms for a pooled sample by a bioluminometric assay coupled with modified primer extension reactions (BAMPER)”, Nucleic Acids Research, vol. 29, No. 19, Oct. 2001, (e93), 1-11. |
| CN Office action dated Dec. 15, 2020, for CN Patent Application No. 201910418123.X. |
| Number | Date | Country | |
|---|---|---|---|
| 20210172907 A1 | Jun 2021 | US |
| Number | Date | Country | |
|---|---|---|---|
| 61365327 | Jul 2010 | US | |
| 61361403 | Jul 2010 | US | |
| 61360495 | Jul 2010 | US | |
| 61360493 | Jun 2010 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 14597507 | Jan 2015 | US |
| Child | 15292795 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15943668 | Apr 2018 | US |
| Child | 17064948 | US | |
| Parent | 15292795 | Oct 2016 | US |
| Child | 15943668 | US | |
| Parent | 13861237 | Apr 2013 | US |
| Child | 14597507 | US | |
| Parent | 13174514 | Jun 2011 | US |
| Child | 13861237 | US |
