Information
-
Patent Grant
-
6624838
-
Patent Number
6,624,838
-
Date Filed
Friday, May 21, 199925 years ago
-
Date Issued
Tuesday, September 23, 200320 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
- Fitzpatrick, Cella, Harper & Scinto
-
CPC
-
US Classifications
Field of Search
US
- 347 237
- 347 238
- 347 247
- 347 130
- 347 132
- 438 573
- 438 584
- 438 599
- 438 617
- 257 113
- 257 175
- 327 544
- 395 75003
- 365 227
- 358 300
-
International Classifications
-
Abstract
To prevent an electrical short due to ion movement in a semiconductor chip and improve the reliability. In a predetermined period T2 in which light-emitting or transfer operation is not performed by light-emitting elements, control signals φ1, φ2, φI, and φS and a signal φm of a negative-electrode-side power-supply input unit are set to a potential or high-impedance state same as that of a positive-electrode-side power-supply input unit.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a control apparatus for controlling a semiconductor chip such as an LED array used as a recording light-emitting element, moreover to an image recording apparatus for forming a visible image on a recording medium through an electrophotographic recording system by using the semiconductor chip.
2. Related Background Art
A self-scanning LED array (hereafter referred to as SLED) has been used so far as a recording light-emitting element.
The self-scanning LED array is disclosed in Japanese Patent Application Laid-Open Nos. 1-238962, 2-208067, 2-212170, 3-20457, 3-194978, 4-5872, 4-23367, 4-296579, and 5-84971, JAPAN HARD COPY, proposal of optical-printer light-emitting array constituted by integrating 91 (A-17) driving circuit, and proposal of self-scanning light-emitting element (SLED) using the PNPN thyristor structure of IEICE (Institute of Electronics, Information and Communication Engineers), Mar. 5, 1990, and noticed as a recording light-emitting element. The configuration of an SLED array head will be described below.
FIG. 8
shows a schematic configuration of the SLED array head.
Symbol
211
denotes an SLED semiconductor chip. Symbol
212
denotes a base substrate for mounting the SLED semiconductor chip
211
, which is configured by a printed circuit board made of glass epoxy or ceramic. Symbol
214
denotes a driver IC for receiving a control signal from an external unit to generate a driving signal for the SLED semiconductor chip
211
.
Symbol
215
denotes a bonding wire for connecting output signals supplied from the driver IC
214
(φ
1
, φ
2
, φS, and φI) and a negative-electrode-side power-supply input (GND as for this embodiment) to the SLED semiconductor chip
211
respectively. Symbol
216
denotes a positive-electrode (+) power-supply pattern extended to the base substrate
212
(+5V as for this embodiment). Symbol
217
denotes silver paste for electrically connecting and bonding the positive-electrode-side power-supply pattern
216
extended to the base substrate
212
with the back-face electrode of the SLED semiconductor chip
211
to fix them.
The SLED semiconductor chip
211
frequently uses a method of using the substrate of a chip as an anode because anodes of a light-emission thyristor and a transfer thyristor both serve as a common line and thereby, serve a maximum operating-current route and due to electrical characteristics of P and N of a semiconductor (generally, GaAs semiconductor is used) and problems on fabrication process.
When using a method of using the substrate of a semiconductor chip as a power-supply input unit and connecting the back-face electrode of the semiconductor chip with the power-supply pattern of a base substrate by a conductive adhesive and fixing them, it is inevitable to use a material containing positive (+) metal ions (e.g. silver paste) in order to select a low-resistance material of a predetermined level as the conductive adhesive.
As for the SLED semiconductor chip
211
described above, however, a substrate normally serves as a positive electrode. The substrate is electrically connected with the power-supply pattern
216
of the base substrate
212
by the silver paste
217
through a back-face electrode or the like.
Therefore, an electric-field configuration is formed in which positive ions in the substrate-side silver paste
217
(conductive adhesive) are attracted to the epitaxial-layer side through a chip-side face or the like at a portion serving as a negative electrode in the signal input unit of the epitaxial-layer-side face of the SLED semiconductor chip
211
configuring as a circuit opposite to the substrate-side face of the SLED semiconductor chip
211
. The distance between the signal input unit on the epitaxial-layer-side face and the silver paste
217
at the substrate side is approximately 600 μm.
The attracted positive ions are deposited through reaction with other impurity ions. Therefore, if the deposition reaction continuously occurs, a short circuit is formed between the epitaxial-layer and the substrate due to reasonable elapse of time and thereby, the original operation of an SLED can not be performed.
Therefore, it is an object of the present invention to provide a high-reliability driving controller and image recording apparatus capable of preventing the probability of short circuits formed between electrodes.
SUMMARY OF THE INVENTION
It is an object of the present invention to solve the above problems.
That is, the present invention provides a control apparatus for controlling a semiconductor chip provided with an electrode on its back face and other faces and having a recording element to drive the recording element by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises means for controlling portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the recording element is not driven.
Moreover, the present invention provides a control apparatus for controlling a semiconductor chip provided with an electrode on its back face and other faces by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises means for setting portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the semiconductor chip is not driven.
Furthermore, the present invention provides an image recording apparatus for controlling a semiconductor chip provided with an electrode on its back face and other faces and having a recording element and recording an image on a recording medium to drive the recording element by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises means for controlling portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the recording element is not driven.
Furthermore, the present invention provides a control method for controlling a semiconductor chip provided with an electrode on its back face and other faces and having a recording element to drive the recording element by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises the step of controlling portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the recording element is not driven.
Furthermore, the present invention provides a control method for controlling a semiconductor chip provided with an electrode on its back face and other faces by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises the step of setting portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the semiconductor chip is not driven.
Furthermore, the present invention provides an image recording apparatus control method for controlling a semiconductor chip provided with an electrode on its back face and other faces and having a recording element and recording an image on a recording medium to drive the recording element by connecting the electrode on the back face of the semiconductor chip to a base substrate by a conductive adhesive and inputting a power supply and a control signal to the semiconductor chip from the electrodes on the back face and other faces of the semiconductor chip, which comprises the step of controlling portions between the electrode on the back face and the electrodes on the other faces of the semiconductor chip to a high impedance or the same potential in a predetermined period in which the recording element is not driven.
Other objects, configurations, and advantages of the present invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a block diagram showing the configuration of the SLED array head of a first embodiment of the present invention;
FIG. 2
is a circuit diagram showing the circuit configuration in an SLED semiconductor chip;
FIG. 3
is a perspective view showing the external configuration of an SLED array head;
FIG. 4
is a timing chart showing the light-emitting operation of an SLED array head by dividing the operation into a section in which the operation is performed and a section in which the operation is not performed;
FIG. 5
is a timing chart showing the normal light-emitting operation of an SLED array head;
FIG. 6
is a block diagram showing the configuration of the SLED array head of a second embodiment of the present invention;
FIG. 7
is a timing chart showing the light-emitting operation of an SLED array head by dividing the operation into a section in which the operation is performed and a section in which the operation is not performed;
FIG. 8
is a perspective view showing the external configuration of a conventional SLED array head;
FIG. 9
is an illustration of an image recording apparatus; and
FIGS. 10A and 10B
are time charts showing an image recording apparatus.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention will be described below in detail by referring to the accompanying drawings.
[Outline]
First, the outline of the present invention will be described.
As for the preferred embodiments, a control signal input unit (control signals φ
1
, φ
2
, φS, and φI) and a negative-electrode-side power-supply input unit (negative-electrode-potential on/off control signal φm) are fixed to a potential or high-impedance state same as that of a positive-electrode-side power-supply input unit (power-supply voltage of +5V) in a predetermined period in which light-emitting operation or transfer operation is not performed by an LED (Light-Emitting Diode) array.
Moreover, as for the preferred embodiments, a control signal input unit (control signals φ
1
, φ
2
, φS, and φI), a positive-electrode-side power-supply input unit (positive-electrode potential on/off control signal φp), and a negative-electrode-side power-supply input unit (GND) are fixed to the same potential or high-impedance state in a predetermined period in which the light-emitting operation or transfer operation is not performed by an LED array.
Specific examples will be described below.
[First embodiment]
The first embodiment of the present invention will be described below by referring to
FIGS. 1
to
5
. However, the description of a portion same as that of a conventional example is omitted and the portion is provided with the same symbol.
(Configuration)
A schematic configuration of the first embodiment will be described by referring to
FIGS. 1
to
3
.
FIG. 1
shows a schematic configuration of a substrate mounting a self-scanning LED (SLED) array head of the present invention.
FIG. 2
shows an enlarged circuit configuration of an SLED semiconductor chip
211
.
FIG. 3
shows the appearance of a substrate including an SLED array head.
In
FIGS. 1 and 2
, symbol
211
denotes an SLED semiconductor chip.
In the SLED semiconductor chop
211
, symbols
1
to
5
denote light-emitting thyristors serving as recording elements and
11
to
15
denote transfer thyristors.
As for the light-emitting thyristors
1
to
5
, a +5V power-supply line
50
is connected to anodes and a connection line
20
to which image data φD and a control signal φI are inputted is connected to cathodes.
As for the transfer thyristors
11
to
15
, the +5V power-supply line
50
is connected to the anodes and connection lines
21
and
22
to which shift pulses
1
and
2
serving as control signals φ
1
and φ
2
are inputted are connected to the cathodes.
Gate terminals of the light-emitting thyristors
1
to
5
are connected with gate terminals of the transfer thyristors
11
to
15
by connection lines
31
to
35
respectively. Diodes
41
to
45
are connected between the connection lines
31
to
35
in series.
A connection line
23
to which a start pulse φs is inputted is connected to a connection point “a” with a diode
41
of the connection line
31
.
The connection lines
31
to
35
are connected with a connection line
51
to which a negative-electrode-potential on/off control signal φm is inputted. The connection line
51
is connected with the collector terminal of a switching element
201
. A connection line
52
to which the negative-electrode-potential on/off control signal φm is inputted is connected to the base terminal of the switching element
201
.
Symbol
212
denotes a base substrate for mounting the SLED semiconductor chip
211
. The SLED semiconductor chip
211
is configured by a printed circuit board made of glass epoxy or ceramic.
Symbol
213
denotes a connector. The connector
213
connects with the connection line
52
for the negative-electrode-potential on/off control signal φm, connection lines
20
to
23
for the control signals φ
1
, φ
2
, φS, and φI, +5V power-supply line
50
, and earth line
53
.
Symbol
214
denotes a driver IC for receiving various control signals from external units and outputting these signals as control signals for driving the SLED semiconductor chip
211
.
In
FIG. 3
, symbol
215
denotes a bonding wire for connecting control signals (φ
1
, φ
2
, φS, and φI) outputted from the driver IC
214
and a negative-electrode-side power-supply input signal (as for this embodiment, GND supplied from the earth line
53
) to an electrode formed on the surface of the SLED semiconductor chip
211
.
Symbol
216
denotes a positive-electrode-side power-supply pattern (+5V as for this embodiment) extended to the base substrate
212
.
Symbol
217
denotes silver paste for electrically connecting and bonding the positive-electrode-side power-supply pattern
216
extended to the base substrate
212
with the back-face electrode of the SLED semiconductor chip
211
and bonding to fix them.
(Circuit operations)
Then, circuit operations of an SLED array head will be described below.
FIG. 4
shows operation timings of various control signals φ
1
, φ
2
, φS, and φI for controlling light emission and non-light emission of the light-emission thyristors
1
to
5
in the SLED semiconductor chip
211
and a negative-electrode-potential on/off control signal φm. The hatched region enclosed by broken lines shown by the waveform of the image data φD shows a state in which the light-emission thyristors
1
to
5
are turned on.
In
FIG. 4
, the portion of a section T
1
is a waveform when the normal light-emitting or transfer operation is performed (detailed operations are described later). The portion of a section T
2
corresponds to a predetermined period in which the light-emitting or transfer operation by an LED array is not performed and which is a feature of this embodiment.
As for this circuit, a control signal input unit (control signals φ
1
, φ
2
, φS, and φI) and a negative-electrode-side power-supply input unit (negative-electrode potential on/off control signal φm) are fixed to a potential or high-impedance state same as that of a positive-electrode-side power-supply input unit (power-supply voltage of +5V) in the predetermined section T
2
.
Specific operations will be described below.
The final portion of the section T
1
denotes the timing of the final step of a series of light-emitting operations of a unit mounting an SLED array head. That is, the subsequent section denotes a state in which no light-emitting or transfer operation is requested.
The subsequent section T
2
denotes a section of the present invention. In the section T
2
, the control signals φ
1
, φ
2
, φS, and φI are all fixed to +5V. Moreover, the negative-electrode-potential on/off control signal φm is set to 0V and input, the switching element
201
is turned off, and thereby, the negative-electrode-side power supply is opened.
By setting the above state, every signal and negative-electrode-side power supply connected to the epitaxial-layer-side face (element-forming face) of the SLED semiconductor chip
211
opposite to the substrate-side face (back-face electrode side) is set to a potential equal to that of the positive-electrode-side power supply of the substrate side or a floating state and thus, a state in which a bias is not applied between the substrate and the epitaxial-layer is configured.
Thereby, the conductive ion component of the silver paste
217
serving as a conductive adhesive for connecting the substrate of the SLED semiconductor chip
211
with the base substrate
212
of the chip
211
and fixing them is moved in the epitaxial-layer direction and thus, it is possible to prevent a phenomenon such as deposition from occurring.
Moreover, there is an application example of an LED array head that performs recording by mounting an SLED array head including the SLED semiconductor chip
211
on an image-forming unit according to an electrostatic electrophotographic system.
As for this type of image-forming unit, the ratio of the total standby time until the service life of the body expires to the actual working time of the body (that is, the time for an LED array head to actually emit light as optical writing means) is considerably large. Because the time ratio is considerably large, it is possible to control the time for depositing an ion component and thereby, it is possible to improve the deposition quantity based on the ion component up to a level at which no problem occurs in practical use.
Moreover, as shown in
FIG. 4
, this embodiment controls the negative-electrode-potential on/off control signal φm and the control signals φ
1
, φ
2
, φS, and φI so as to perform circuit operations. In case of this embodiment, the circuit configuration for generating these various signals is omitted. Basically, however, it is possible to execute a predetermined processing by using software means by a control program or hardware means by an arithmetic circuit such as a delay circuit and thereby, performing general control by a CPU.
Then, the circuit operations in the section T
1
shown in
FIG. 4
(light-emitting operation and transfer operation by SLED array of circuit in
FIG. 2
) are described by referring to FIG.
5
.
FIG. 5
shows control signals for controlling the SLED and their timings, which is an example when turning on every element.
As shown in
FIG. 2
, the SLED is configured by the transfer thyristors
11
to
15
arranged like an array and the light-emission thyristors
1
to
5
arranged like an array. Gates of the thyristors are connected each other and the first thyristor is connected to the φS-signal input unit. The gate of the second thyristor is connected to the cathode of the diode
41
connected to the φS terminal and the third thyristor is connected to the cathode of the next diode
42
.
Transfer and light emission will be described below by referring to the timing chart of FIG.
5
.
Transfer is started by changing φS from 0V to 5V. When φS is changed to 5V, Va is set to 5V, Vb is set to 3.7V (when assuming that the forward-directional voltage drop of a diode is 1.3V), Vc is set to 2.4V, Vd is set to 1.1V, and subsequently, voltage is set to 0V, and gate signals of the transfer thyristors
11
and
12
change from 0V to 5V and 3.7V respectively.
Under the above state, by changing φ
1
from 5V to 0V, the potential of the anode of the transfer thyristor
11
is set to 5V, that of the cathode of it is set to 0V, that of the gate of it is set to 3.7V, thereby the on-condition of the thyristor is set, and thus the transfer thyristor
11
is turned on.
Under the above state, even if changing φS to 0V, Va is set to approximately 5V because the thyristor
11
is turned on (this is because a pulse is applied to φS through a resistance and when the thyristor is turned on, potentials of the anode and gate becomes almost equal). Therefore, even if setting φS to 0V, the on-condition of the first thyristor is kept and the first shift operation is completed.
Under the above state, by changing the signal φI for a light-emission thyristor from 5V to 0V, a condition same as that in which the transfer thyristor
11
is turned on is set. Therefore, the light-emitting thyristor
1
is turned on and a first LED lights up. As for the first LED, by returning φI to 5V, the potential difference between the anode and the cathode of the light-emission thyristor
1
decreases to 0 and thereby, the minimum holding current of the thyristor cannot be flown. Thus, the light-emission thyristor
1
is turned off.
Then, transfer conditions from the transfer thyristor
11
to the transfer thyristor
12
will be described below.
Even if the light-emission thyristor
1
is turned off, φ
1
is kept at 0V and the transfer thyristor
11
is kept on. Therefore, the gate voltage Va of the transfer thyristor
11
is set to approximately 5V and the voltage Vb is set to 3.7V.
Under the above state, by changing φ
2
from 5V to 0V, the potential of the anode of the transfer thyristor
12
is set to 5V, that of the cathode of it is set to 0V, and that of the gate of it is set to 3.7V, and the transfer thyristor
12
is turned on. By changing φ
1
from 0V to 5V after the transfer thyristor
12
is turned on, the transfer thyristor
11
is turned off the same as the light-emission thyristor
1
is turned off. Thus, on-state is transferred from the transfer thyristor
11
to the transfer thyristor
12
. Moreover, by changing φI from 5V to 0V, the light-emission thyristor
2
is turned on to emit light.
Only a light-emission thyristor can emit light while a transfer thyristor is turned on because, unless the transfer thyristor is turned on, gate voltages of thyristors except a thyristor next to a turned-on thyristor are set to 0V and therefore, on-condition of thyristors is not set. Moreover, the thyristor next to the turned-on thyristor is not turned on because the light-emission thyristor is turned on, thereby the potential of φI is set to 3.4V (equivalent to the forward voltage drop of the light-emission thyristor), and the potential difference between the gate and the cathode of the thyristor next to the turned-on thyristor decreases to 0.
[Second embodiment]
Then, the second embodiment of the present invention will be described below by referring to
FIGS. 6 and 7
. However, description of a portion of this embodiment same as that of the above first embodiment is omitted and provided with the same symbol.
FIG. 6
shows a schematic configuration of a substrate mounting an SLED array head of the present invention.
As for an SLED semiconductor chip
211
, a connection line
51
is connected to the earth. Other configuration is the same as that of the first embodiment above described.
A control line
60
for inputting a positive-electrode-potential on/off control signal φp is connected to a connector
213
. The control line
60
is connected to the gate terminal of a switching element
61
and each three-state buffer
62
in a driver IC
214
.
As for this embodiment, the positive-electrode-potential on/off control signal φp substitutes for the negative-electrode-potential on/off control signal φm.
(Circuit operations)
Circuit operations will be described below.
FIG. 7
shows operation timings of the control signals φ
1
, φ
2
, φs, and φI, and the positive-electrode-potential on/off control signal φp for controlling light emission and non-light emission of the light-emission thyristors
1
to
5
in the SLED semiconductor chip
211
.
In
FIG. 4
, the portion of the section T
2
corresponds to a predetermined period in which the light-emitting operation or transfer operation is not performed by an LED array and which is a feature of this embodiment. The portion of the section T
1
shows a waveform while the normal light-emitting or transfer operation is performed, which is the same as the example above described.
As for this circuit, the control signal input unit (φ
1
, φ
2
, φS, and φI), positive-electrode power-supply input unit (positive-electrode-potential on/off control signal φp), and negative-electrode power-supply input unit (GND) are set to the same potential or high-impedance state in the predetermined section T
2
.
Specific operations will be described below.
The section T
1
is a section when the normal light-emitting or transfer operation is performed. The portion of the section T
1
is assumed as the timing of the final step of a series of light-emitting operations of a unit mounting an SLED array head. That is, thereafter, a state in which next light-emitting or transfer operation is not requested is kept.
The section T
2
following the section T
1
is a section in which characteristic operations of this embodiment are performed. In this case, the control signals φ
1
, φ
2
, φS, and φI are turned off by turning off the three-state buffer
62
in accordance with the positive-electrode-potential on/off control signal φp corresponding to the disabling notice of an enable signal supplied from an external unit. Moreover, the positive-electrode-side power supply (+5V) is simultaneously turned off by turning off the switching element
61
in accordance with the positive-electrode-potential on/off control signal φp.
By setting the above state of the section T
2
, every signal connected to the epitaxial-layer-side face (element-forming face) of the SLED semiconductor chip
211
is set to a high-impedance state. Moreover, because the portion between the negative and positive electrodes is set to zero volt, a state in which no bias is applied between the substrate and the epitaxial-layer is configured.
Thereby, it is possible to prevent the probability of the phenomenon that the conductive ion component of the sliver paste
217
moves in the epitaxial-layer direction between the substrate of the SLED semiconductor chip
211
and the base substrate
212
and is deposited.
The above embodiments were described by using an SLED array. However, the embodiments are not restricted to the SLED array. It is possible to obtain the same advantage by using other light-emitting element (recording element).
As for the above embodiments, every control signal and a negative-electrode-side power-supply input unit are set to a potential or high-impedance state same as that of a positive-electrode-side power-supply input unit in a predetermined period in which the light-emitting or transfer operation is not performed by a light-emitting element or every control signal, the positive-electrode-side power-supply input unit, and the negative-electrode-side power-supply input unit are the same potential of high-impedance state. Therefore, because no bias is applied between the epitaxial-layer and the substrate of a semiconductor chip while a head including a light-emitting element is not actually operated, it is possible to produce conductive deposit only when the head is actually operated even if using a conductive adhesive containing positive ions such as sliver paste for connection and fixing and keep the deposit quantity at a level in which there is no problem for practical use when the actual operation time is short enough compared to a standby period.
It is apparent that not only the above embodiments but also various modifications can be considered as the configuration for controlling a power supply and control signals supplied from the electrode on the back face and electrodes on other faces of a semiconductor chip by various methods so that no electric field is generated between the electrode on the back face and the electrodes on other faces of the semiconductor chip.
(Example of application to image recording apparatus)
Then, an image recording apparatus for recording an image through an electrophotographic system by using an SLED array head described for the above embodiments will be described below in detail.
FIG. 9
is a sectional view of the image recording apparatus. Because the configuration and control operations of the SLED array head were previously described, other portions will be described below. In
FIG. 9
, symbol
212
denotes the above-described base substrate on which an SLED chip
211
is mounted. The light-emitting unit of the SLED chip
211
is turned downward in FIG.
9
. Symbol
902
denotes a photosensitive body rotating in the direction of the arrow and
903
denotes a self-focusing lens array. The lens array
903
records an electrostatic latent image on the photosensitive-body drum
902
by focusing a luminous flux emitted from the SLED chip
211
on the faced photosensitive-body drum
902
. The base substrate
212
and the lens array
903
are integrated as a removable cartridge and the cartridge including the base substrate
212
and the lens array
903
may be referred to as an SLED array head
901
.
Moreover, symbol
904
denotes a primary electrification roller for uniformly electrifying the surface of the photosensitive-body drum
902
before exposure by the SLED array head
901
and
905
denotes a development counter for developing an electrostatic latent image recorded on the photosensitive-body drum
902
with toner by the SLED array head
901
,
906
denotes a transfer roller for transferring the toner image recorded by the development counter
905
onto a transfer form, and
907
denotes a fixing unit for fixing the toner image on the transfer sheet.
Furthermore, each section in the image control unit is controlled by a control unit
908
. An operation unit
909
is used for an operator to supply a command for starting an image recording job or the like to an image recording apparatus
900
.
Furthermore, an image readout apparatus
910
is connected as the external unit of the image recording apparatus
900
and moreover connected with a host computer
920
through a network
921
. Thereby, the image recording apparatus
900
can execute various image recording jobs on an image read by the image readout apparatus
910
or languaged image information to be sent from the host computer.
It is possible to independently set the operation unit
909
outside of the image recording apparatus
909
or inside of the image readout apparatus
910
.
Then, the timing will be specifically described below at which the above-described section T
2
is controlled to execute an image recording job, by referring to the time charts of
FIGS. 10A and 10B
.
FIG. 10A
shows a case of performing an image recording job J
1
for two pages and an image recording job J
2
for three pages. In
FIG. 10A
, symbol tj
1
s denotes the timing when the image recording job J
1
is started, tj
1
e denotes the timing when the image recording job J
1
is ended, tj
2
s denotes the timing when the image recording job J
2
is started, and tj
2
e denotes the timing when the image recording job J
2
is ended. In this time chart, the above section T
2
is controlled at the timing of standby Ta between the image recording jobs (that is, in a period between tj
1
e and tj
2
s).
In other words, the control unit
908
executes the control of the above section T
2
during the standby between the image recording jobs and thereafter, changes the mode to the control of the above section T
1
to execute an image recording job synchronously with an image-recording-jog start command supplied from the operation unit
909
or host computer
920
. Moreover, the control unit
908
changes the mode to the control of the above section T
2
again after the image recording job is completed.
Furthermore, it is preferable to perform the control of the above section T
2
also at the timing of the paper interval Tb between sheets present in each job.
FIG. 10B
shows a detailed timing chart while the image on each page is recorded. In
FIG. 10B
, it is more preferable to perform the control of the above section T
2
at the timing of line interval Tc between line recording and line recording while each image is recorded.
This embodiment makes it possible to record data on a recording medium such as a photosensitive body by mounting the above head on an electrophotographic image recording apparatus as a recording head and thereby, it is possible to fabricate a recording apparatus having less electrical troubles and a high reliability when recording operation is performed.
As for the above embodiments, a configuration is described in which the positive potential of a power supply is supplied from the electrode on the back-face side of a semiconductor chip and the negative potential of the power supply and control signals are supplied from electrodes on the other face sides. It is only a design matter to input any power-supply potential and any control signal from any face. It is apparent from the above embodiments that any configuration can be applied so as to prevent the probability of electric fields occurring between the electrode on the back face and electrodes on other faces.
Moreover, as for the above embodiments, a case is described in which an SLED array chip is used as a semiconductor chip. However, the present invention is not restricted to the above case. It is apparent that the present invention can be applied to a recording-element array chip other than a light-emitting-element array chip and moreover, various semiconductor chips other than a semiconductor chip used for recording.
Furthermore, it is apparent that the present invention can be applied to various types of apparatuses including a display in addition to the fact that an image recording apparatus is configured by using the above semiconductor chip.
The present invention was described above by using some preferred embodiments. However, the present invention is not restricted to these embodiments. It is apparent that various modifications and applications of the present invention are possible in the scope of claims.
Claims
- 1. An image recording apparatus comprising:a recording element chip, which consists of a semiconductor chip having first electrodes on a back face and second electrodes on the other face, the first electrodes connecting to a power supply pattern on a base substrate by a conductive adhesive which contains ions and the second electrodes connecting to bonding wires; inputting means for (i) inputting a positive potential of a power supply to said recording element chip through the first electrodes on the back face of said recording element chip via the conductive adhesive, and (ii) inputting a negative potential of the power supply and a control signal to said recording element chip through the second electrodes on the other face of said recording element chip via the bonding wires; and setting means for (i) setting the positive potential of power supply input to the first electrodes on the back face of the recording element chip and the negative potential of the power supply input to the second electrodes on the other face of said recording element chip to the same potential and for (ii) setting the control signal input to the second electrodes to a high impedance or the same potential as that of the positive potential of power supply input to the first electrodes, in a predetermined period in which said recording element chip is not driven.
- 2. An apparatus according to claim 1, further comprising switching means for connecting or disconnecting one of the positive potential and the negative potential of the power supply in the predetermined period.
- 3. An apparatus according to claim 1, wherein said recording element chip is fixed on the base substrate by the conductive adhesive.
- 4. An apparatus according to claim 1, wherein the conductive adhesive contains positive ions.
- 5. An apparatus according to claim 1, wherein the back face is the substrate side of the semiconductor chip.
- 6. An apparatus according to claim 1, wherein the other face is the epitaxial layer side of the semiconductor chip.
- 7. An apparatus according to claim 1, wherein a plurality of recording elements are arranged as an array on said recording element chip.
- 8. An apparatus according to claim 7, wherein the control signal includes a two-phase pulse signal and successively turns on the recording elements in accordance with the two-phase pulse signal.
- 9. An apparatus according to claim 7, wherein the recording elements each comprise a light-emitting element.
- 10. An apparatus according to claim 9, further comprising a recording medium comprising a photosensitive body for recording an image through an electrophotographic system.
- 11. An apparatus according to claim 9, wherein each light-emitting element is a light-emission thyristor.
- 12. An apparatus according to claim 11, wherein the semiconductor chip further includes transfer thyristors corresponding to each light-emission thyristor and light-emission and non-light emission of the light-emission thyristor is controlled by the transfer thyristor.
- 13. An apparatus according to claim 12, wherein the control signal includes a two-phase pulse signal and a transfer thyristor and light-emission thyristor are successively turned on in accordance with the two-phase pulse signal.
- 14. An apparatus according to claim 1, wherein the predetermined period is a standby period between an image recording job and the next image recording job.
- 15. An apparatus according to claim 1, wherein the predetermined period is a period between pages in one job.
- 16. An apparatus according to claim 1, wherein the predetermined period is a period between line recordings in one page.
- 17. An image recording apparatus control method for controlling a recording element chip, which consists of a semiconductor chip having first electrodes on a back face and second electrodes on the other face, the first electrodes connecting to a power supply pattern on a base substrate by a conductive adhesive which contains ions and the second electrodes connecting to bonding wires, the method comprising the steps of:inputting a positive potential of a power supply to said recording element chip through the conductive adhesive; inputting a negative potential of the power supply and a control signal to said recording element chip through the second electrodes on the other face of said recording element chip via the bonding wires; setting the positive potential of power supply input to the first electrodes on the back face of said recording element chip and the negative potential of power supply input to the second electrodes on the other face of said recording element chip to the same potential, in a predetermined period in which the recording element chip is not driven; and setting the control signal input to the second electrodes to a high impedance or the same potential as that of the positive potential of power supply input to the first electrodes, in the predetermined period.
- 18. A method according to claim 17, wherein the predetermined period is a standby period between an image recording job and the next image recording job.
- 19. A method according to claim 17, wherein the predetermined period is a period between pages in one job.
- 20. A method according to claim 17, wherein the predetermined period is a period between line recordings in one page.
- 21. A method according to claim 17, wherein a plurality of recording elements are arranged as an array on said recording element array chip.
- 22. A method according to claim 21, wherein the recording elements each comprise a light-emitting element.
- 23. A method according to claim 22, wherein a recording medium comprising a photosensitive body is used for recording an image through an electrophotographic system.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-149011 |
May 1998 |
JP |
|
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