SEMICONDUCTOR CIRCUIT

Abstract

A semiconductor circuit suitable for normally-on switching elements or switching elements low in threshold voltage. A negative power supply is charged by a high-voltage power supply. A high-voltage switch controls the advisability of applying a voltage to a high-voltage terminal. With deducing the power supply to power switching elements, the high-voltage switch is turned off, and even in the case where the voltage of the controlling circuits of the power switching elements is reduced, the power supply capacitors for the controlling circuits are charged by the high-voltage terminal thereby to operate the controlling circuits. Further, a negative power source voltage generating circuit utilizes the energy charged to the capacitors from output terminals. A voltage terminal is inserted between the high-voltage terminal and a reference voltage terminal. The negative power source voltage generating circuit is interposed between the voltage terminal and a plurality of the output terminals.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram for explaining a semiconductor circuit according to a first embodiment.

FIG. 2 is a diagram for explaining a semiconductor circuit according to a second embodiment.

FIG. 3 is a diagram for explaining a semiconductor circuit according to a third embodiment.

FIG. 4 is a diagram for explaining a semiconductor circuit according to a fourth embodiment.

FIG. 5 is a diagram for explaining a semiconductor circuit according to a fifth embodiment.

FIG. 6 is a diagram for explaining a semiconductor circuit according to a sixth embodiment.

FIG. 7 is a diagram for explaining a semiconductor circuit according to a seventh embodiment.

FIG. 8 is a diagram for explaining a semiconductor circuit according to an eighth embodiment.

FIG. 9 is a diagram for explaining a semiconductor circuit according to a ninth embodiment.

FIG. 10 is a diagram for explaining a semiconductor circuit according to a tenth embodiment.

FIG. 11 is a diagram for explaining a semiconductor circuit according to an 11th embodiment.

FIG. 12 is a diagram for explaining a semiconductor circuit according to a 12th embodiment.

FIG. 13 is a diagram for explaining a semiconductor circuit according to a 13th embodiment.

FIG. 14 is a diagram for explaining a semiconductor circuit according to a 14th embodiment.

FIG. 15 is a diagram for explaining a semiconductor circuit according to a 15th embodiment.

FIG. 16 is a diagram for explaining a semiconductor circuit according to a 16th embodiment.

FIG. 17 is a diagram for explaining a semiconductor circuit according to a 17th embodiment.

FIG. 18 is a diagram for explaining a semiconductor circuit according to an 18th embodiment.

FIG. 19 is a diagram for explaining a semiconductor circuit according to a 19th embodiment.

FIG. 20 is a diagram for explaining a semiconductor circuit according to a 20th embodiment.

FIG. 21 is a diagram for explaining a semiconductor circuit according to a 21st embodiment.

FIG. 22 is a diagram for explaining a semiconductor circuit according to a 22nd embodiment.

FIG. 23 is a diagram for explaining a semiconductor circuit according to a 23rd embodiment.

FIG. 24 is a diagram for explaining a semiconductor circuit according to a 24th embodiment.

FIGS. 25A and 25B are diagrams for explaining a semiconductor circuit according to a 25th embodiment.

FIG. 26 is a diagram for explaining a method of controlling a main switch according to the 25th embodiment.

FIG. 27 is a diagram for explaining a semiconductor circuit according to a 26th embodiment.

FIG. 28 is a diagram for explaining a semiconductor circuit according to a 27th embodiment.

FIG. 29 is a diagram for explaining a semiconductor circuit according to a 28th embodiment.

FIG. 30 is a diagram for explaining a semiconductor circuit according to a 29th embodiment.

Claims

1. A semiconductor circuit comprising: a reference voltage terminal;a first power source voltage terminal higher in voltage than the reference voltage terminal;at least a set of output terminals arranged between the reference voltage terminal and the first power source voltage terminal;a plurality of first switching elements arranged between the output terminals and the first power source voltage terminal; anda plurality of first controlling circuits for controlling the first switching elements;wherein the first controlling circuits operate between the voltage of the plurality of high-voltage-side voltage terminals and the voltage of a plurality of low-voltage-side voltage terminals, respectively;wherein the voltage at the low-voltage-side voltage terminals is a negative voltage lower than the voltage at the source terminal of the first switching elements;wherein a plurality of first capacitors are arranged between the output terminals and a second power source voltage terminal; andwherein the voltage at the low-voltage-side voltage terminals is generated by the voltage charged to the first capacitors.

2. The semiconductor circuit according to claim 1, further comprising a plurality of first rectifying elements between the second power source voltage terminal and the first capacitors; and wherein the first capacitors are charged in the case where the voltage at the output terminals is higher than the voltage at the second power source voltage terminal.

3. The semiconductor circuit according to claim 1, further comprising at least a set of second switching elements and a plurality of second controlling circuits for controlling the second switching elements between the reference voltage terminal and the output terminals; wherein the second controlling circuits operate between the voltage at the high-voltage-side voltage terminals and the voltage at a third voltage terminal providing the voltage at the low-voltage-side voltage terminals, and the voltage at the third voltage terminal is a negative voltage lower than the voltage at the reference voltage terminal.

4. The semiconductor circuit according to claim 3, further comprising a second capacitor inserted between the reference voltage terminal and the third voltage terminal; wherein the second capacitor is charged from the first capacitors.

5. The semiconductor circuit according to claim 4, further comprising a plurality of second rectifying elements inserted between the first capacitors and the third voltage terminal; wherein the second capacitor is charged from the first capacitors through the second rectifying elements.

6. The semiconductor circuit according to claim 4, wherein the second capacitor is charged by use of a step-down voltage circuit.

7. The semiconductor circuit according to claim 1, wherein the voltage at the second power source voltage terminal is supplied by a power supply connected to the first power source voltage terminal.

8. The semiconductor circuit according to claim 1, further comprising a third capacitor between the second power source voltage terminal and the first power source voltage terminal, wherein the third capacitor is charged through a current pass formed between the second power source voltage terminal and a fourth power source voltage terminal lower in potential than the second power source voltage terminal.

9. The semiconductor circuit according to claim 8, further comprising a first zener diode in the current pass between the second power source voltage terminal and the fourth power source voltage terminal, wherein the voltage difference between the first power source voltage terminal and the second power source voltage terminal is held at not lower than a specified value.

10. The semiconductor circuit according to claim 8, further comprising a third switching element between the second power source voltage terminal and the fourth power source voltage terminal, wherein the voltage difference between the first power source voltage terminal and the second power source voltage terminal is held at not lower than a specified value.

11. The semiconductor circuit according to claim 8, wherein the voltage difference between the second power source voltage terminal and the first power source voltage terminal can be controlled.

12. The semiconductor circuit according to claim 11, further comprising a first switch for controlling the voltage increase at the first power source voltage terminal, wherein the first switch is turned on in the case where the voltage difference between the second power source voltage terminal and the first power source voltage terminal is not lower than the first reference voltage value, and turned off in the case where the voltage difference is not higher than a second reference value lower than the first reference voltage value.

13. The semiconductor circuit according to claim 1, wherein the voltage at the output terminals with no current supplied to the load is higher in potential at lest one third of the voltage difference between the high-voltage-side voltage terminals and the reference voltage terminal.

14. The semiconductor circuit according to claim 1, wherein the switching element is formed of a wide band gap semiconductor having a band gap of not smaller than 2.0 eV.

15. The semiconductor circuit according to claim 1, wherein the switching element is a normally-on semiconductor element.

16. A semiconductor circuit comprising: a reference voltage terminal;a first power source voltage terminal higher in voltage than the reference voltage terminal;at least a set of output terminals inserted between the reference voltage terminal and the first power source voltage terminal;a plurality of first switching elements inserted between the output terminals and the first power source voltage;a plurality of first controlling circuits for controlling the first switching elements, the first controlling circuits operating between the voltage at a plurality of high-voltage-side voltage terminals and the voltage at a plurality of low-voltage-side voltage terminals, the voltage at the low-voltage-side voltage terminals being a negative voltage lower than the source terminal voltage of the first switching elements;a plurality of first capacitors inserted between the output terminals and the second power source voltage terminal, the voltage of the low-voltage-side voltage terminals being generated by the voltage charged to the first capacitors; andat least a set of second switching elements and a plurality of second controlling circuits for controlling the second switching elements, being inserted between the reference voltage terminal and the output terminals;wherein the second controlling circuits operate between the voltage at the high-voltage-side voltage terminals and the voltage at a third voltage terminal constituting the voltage at the low-voltage-side voltage terminals;wherein the voltage at the third voltage terminal is a negative voltage than the voltage at the reference voltage terminal;wherein the voltage increase of the first power source voltage terminal is controlled by the first switch; andwherein the first switch is turned on in the case where the voltage between the reference voltage terminal and the third power source voltage terminal is not lower than a third reference voltage value, and turned off in the case where the voltage between the reference voltage terminal and the third power source voltage terminal is not higher than a fourth reference value lower than the third reference voltage value.

17. A semiconductor circuit comprising: a reference voltage terminal;a first power source voltage terminal higher in voltage than the reference voltage terminal;at least a set of output terminals inserted between the reference voltage terminal and the first power source voltage terminal;a plurality of first switching elements inserted between the output terminals and the first power source voltage terminal;a plurality of first controlling circuits for controlling the first switching elements, the first controlling circuits operating between the voltage at a plurality of high-voltage-side voltage terminals and the voltage at a plurality of low-voltage-side voltage terminals, the voltage at the low-voltage-side voltage terminals being a negative voltage lower than the voltage at the source terminal of the first switching elements; anda plurality of first capacitors inserted between the output terminals and the second power source voltage terminal;wherein the voltage of the low-voltage-side voltage terminals is generated by the voltage charged to the first capacitors,wherein the voltage increase at the first power source voltage terminal is controlled by the first switch; andwherein the first switch is turned on in the case where the voltage between the reference voltage terminal and a fifth power source voltage terminal is not lower than the first reference voltage value and turned off in the case where the voltage between the reference voltage terminal and the fifth power source voltage terminal is not higher than the second reference voltage value lower than the first reference voltage value.

18. A semiconductor circuit comprising: a reference voltage terminal;a first power source voltage terminal higher in voltage than the reference voltage terminal;at least a set of output terminals inserted between the reference voltage terminal and the first power source voltage terminal;a plurality of first switching elements inserted between the output terminals and the first power source voltage terminal;a plurality of first controlling circuits for controlling the first switching elements, the first controlling circuits operating between the voltage at a plurality of high-voltage-side voltage terminals and the voltage at a plurality of low-voltage-side voltage terminals, the voltage at the low-voltage-side voltage terminals being a negative voltage lower than the voltage at the source terminal of the first switching elements; anda plurality of first capacitors inserted between the output terminals and the second power source voltage terminal;wherein the voltage of the low-voltage-side voltage terminals is generated by the voltage charged to the first capacitors;wherein the voltage increase at the first power source voltage terminal is controlled by the first switch; andwherein the first switch is turned on in the case where the power source voltage of the first controlling circuits is not lower than the first reference voltage and turned off in the case where the power source voltage of the first controlling circuits is not higher than the second reference value lower than the first reference voltage value.

19. The semiconductor circuit according to claim 16, wherein the time required for the first switch to turn off from the on state thereof is not longer than one half of the time required for the first switch to turn on completely from the off state thereof.

20. The semiconductor circuit according to claim 16, wherein in the case where the power source voltage of the first controlling circuits is not higher than a specified voltage, the fourth switching element connected to the low-voltage-side voltage terminals of the first controlling circuits is turned on and the current flows from the low-voltage-side voltage terminals of the first controlling circuits to the low-voltage side.

21. The semiconductor circuit according to claim 20, further comprising a fifth switching element connected to the gate terminal of the first switching elements, wherein in the case where the power supply capacity to the first controlling circuits is reduced to or below a reference, the fifth switching element is turned on thereby to reduce the gate voltage of the first switching elements.

22. The semiconductor circuit according to claim 16, further comprising a sixth switching element inserted between the first voltage terminal and the reference voltage terminal, wherein in the case where the power supply capacity to the first controlling circuits is reduced to or below a reference, the current is supplied from the first voltage terminal to the reference voltage terminal.

23. The semiconductor circuit according to claim 16, wherein the voltage at the output terminals with no current supplied to the load is higher in potential by at least one third of the voltage difference between the high-voltage-side voltage terminals and the reference voltage terminal.

24. The semiconductor circuit according to claim 16, wherein selected one of the switching element and the switch is formed of a wide band gap semiconductor having a band gap of not less than 2.0 eV.

25. The semiconductor circuit according to claim 16, wherein the switching element is a normally-on semiconductor element.

26. A semiconductor circuit comprising a controlling circuit for a power semiconductor switching element: wherein the controlling circuit includes a logic controlling circuit unit for generating a logic output corresponding to the on or off state of the power semiconductor switching element, and a seventh switching element connected in series to the logic controlling circuit unit;wherein in the case where the seventh switching element is turned on, the current is supplied from the power supply of the controlling circuit to the logic controlling circuit and the signal of the logic controlling circuit is transmitted to the gate terminal of the switching element; andwherein in the case where the switch circuit is turned off, the current from the power supply of the controlling circuit to the logic controlling circuit is stopped, and a unique signal independent of the input signal to the logic controlling circuit is applied to the gate terminal of the power switching element.

27. The semiconductor circuit according to claim 8, further comprising: a fourth capacitor between the sixth power source voltage terminal and the output terminals;a third rectifying element inserted between the first power source voltage terminal and the fourth power source voltage terminal; anda plurality of second switching elements and a plurality of second controlling circuits for controlling the second switching elements, inserted between the reference voltage terminal and the output terminals,wherein in the case where the second switching elements are turned on, the fourth capacitor is charged.

28. A semiconductor circuit comprising: a plurality of first switching elements inserted between a reference voltage terminal and a plurality of output terminals;a plurality of second switching elements between the output terminals and a high-voltage terminal;a fifth capacitor and a fourth rectifying element connected in series between the output terminals and a seventh power source voltage terminal, the fifth capacitor being charged through the fourth rectifying element in the case where the voltage at the output terminals is not lower a specified voltage; anda discharge means for reducing the voltage across the fifth capacitor before the voltage at the output terminals reaches a value not lower than a specified voltage after being reduced.

29. The semiconductor circuit according to claim 1, further comprising: a plurality of first switching elements inserted between the reference voltage terminal and the output terminals;a plurality of second switching elements inserted between the output terminals and the high-voltage-side voltage terminals;a sixth capacitor and a fourth rectifying element connected in series between the output terminals and the eighth power source voltage terminal; anda discharge means for charging the sixth capacitor through the fourth rectifying element in the case where the voltage at the output terminals is not higher than a specified voltage, and reducing the voltage across the sixth capacitor before the voltage at the output terminals is reduced to or below the specified voltage after being increased.

30. The semiconductor circuit according to claim 28, wherein selected one of the switching element and the switch is formed of a wide band gap semiconductor having a band gap of not lower than 2.0 eV.

31. The semiconductor circuit according to claim 28, wherein the switching element is a normally-on semiconductor element.