Patent Application
20220367545
The present disclosure relates to a semiconductor device and an imaging device.
As a semiconductor device used for a complementary metal oxide semiconductor (CMOS) image sensor, a non-planar transistor having a vertical gate electrode and a channel is known (for example, see Patent Document 1).
Patent Document 1: Japanese Patent Application Laid-Open No. 2006-121093
The non-planar transistor disclosed in Patent Document 1 receives a substrate bias effect because its channel region is in contact with a semiconductor substrate.
The present disclosure has been made in view of such circumstances, and an object thereof is to provide a semiconductor device capable of reducing a substrate bias effect and an imaging device using the semiconductor device.
A semiconductor device according to one aspect of the present disclosure includes: a semiconductor substrate; and a field effect transistor provided on a first main surface of the semiconductor substrate, in which the field effect transistor includes a semiconductor region in which a channel is formed, a gate electrode covering the semiconductor region, a gate insulating film disposed between the semiconductor region and the gate electrode, and a first insulating film disposed between the semiconductor region and the semiconductor substrate, the semiconductor region has an upper surface, a first side surface located on one side of the upper surface in a first direction parallel to the upper surface, and a second side surface located on the other side of the upper surface in the first direction, and the gate electrode has a first portion facing the upper surface with the gate insulating film interposed therebetween, a second portion facing the first side surface with the gate insulating film interposed therebetween, and a third portion facing the second side surface with the gate insulating film interposed therebetween.
As a result, the semiconductor region and the semiconductor substrate are insulated from each other by the first insulating film. Therefore, the semiconductor device can reduce the substrate bias effect.
An imaging device according to one aspect of the present disclosure includes: a light receiving element; and a semiconductor device configured to transmit an electric signal photoelectrically converted by the light receiving element, in which the semiconductor device includes a semiconductor substrate, and a field effect transistor provided on the semiconductor substrate, the field effect transistor includes a semiconductor region in which a channel is formed, a gate electrode covering the semiconductor region, a gate insulating film disposed between the semiconductor region and the gate electrode, and a first insulating film disposed between the semiconductor region and the semiconductor substrate, the semiconductor region has an upper surface, a first side surface located on one side of the upper surface in a first direction parallel to the upper surface, and a second side surface located on the other side of the upper surface in the first direction, and the gate electrode has a first portion facing the upper surface with the gate insulating film interposed therebetween, a second portion facing the first side surface with the gate insulating film interposed therebetween, and a third portion facing the second side surface with the gate insulating film interposed therebetween.
As a result, the imaging device can use the semiconductor device having a reduced substrate bias effect as a semiconductor device for transmitting an electric signal photoelectrically converted by the light receiving element. Therefore, the performance of the imaging device can be improved.
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the description of the drawings referred to in the following description, the same or similar parts are denoted by the same or similar reference signs. However, it should be noted that the drawings are schematic, and relations between thicknesses and plane dimensions, ratios between thicknesses of respective layers, and the like differ from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Furthermore, it is needless to say that some portions are different in dimensional relationship and ratio between the drawings.
In the following description, definitions of directions, such as upper and lower sides, are merely definitions for convenience of explanation, and do not limit the technical idea of the present disclosure. For example, it is needless to say that if an object is observed in a 90 degree-rotated state, the upper and lower sides are read as being converted into left and right sides, and if the object is observed in a 180 degree-rotated state, the upper and lower sides are read as being inverted.
In the following description, directions may be described using words “X-axis direction”, “Y-axis direction”, and “Z-axis direction”. For example, the X-axis direction and the Y-axis direction are directions parallel to an upper surface 10a of a semiconductor region 10. The X-axis direction and the Y-axis direction are also referred to as horizontal directions. The Z-axis direction is a direction perpendicular to the upper surface 10a of the semiconductor region 10. The Z-axis direction is also referred to as a depth direction. The X-axis direction, the Y-axis direction, and the Z-axis direction are orthogonal to each other. Note that the X-axis direction is an example of a “second direction” in the present disclosure, the Y-axis direction is an example of a “first direction” in the present disclosure, and the Z-axis direction is an example of a “third direction” in the present disclosure.
In the following description, it will be exemplified that a first conductivity type is an N type and a second conductivity type is a P type. However, the conductivity type may be selected in the opposite relationship, and the first conductivity type may be the P type and the second conductivity type may be the N type.
(Configuration Example of Semiconductor Device)
As illustrated in
The semiconductor substrate 2 includes, for example, single crystal silicon. The semiconductor substrate 2 has a front surface 2a (an example of a “first main surface” in the present disclosure) and a back surface 2b located on the opposite side of the front surface 2a. The MOS transistor 3 is provided on the front surface 2a of the semiconductor substrate 2. The element isolation layer 4 is an insulating film for electrically isolating neighboring elements in the horizontal direction from to each other, and is formed as, for example, a silicon oxide film (SiO2 film).
The MOS transistor 3 includes a semiconductor region 10 in the second conductivity type (e.g., P type) in which a channel is formed, a gate insulating film 20, a gate electrode 30, a source region 41 and a drain region 42 provided on the semiconductor substrate 2, a first insulating film 51, a second insulating film 52, and a third insulating film 53.
The semiconductor region 10 is a part of the semiconductor substrate 2, and includes, for example, single crystal silicon. The semiconductor region 10 is a portion formed by etching the part of the semiconductor substrate 2 on the front surface 2a side. The shape of the semiconductor region 10 is, for example, a fin shape.
The semiconductor region 10 has a shape to be long in the X-axis direction and short in the Y-axis direction. For example, a length L1 of the semiconductor region 10 in the X-axis direction is 150 nm or more and 700 nm or less. A length (width) L2 of the semiconductor region 10 in the Y-axis direction is 15 nm or more and 1000 nm or less. A length (depth) L3 of the semiconductor region 10 in the Z-axis direction is 100 nm or more and 1000 nm or less.
A trench H1 having the second insulating film 52 as its bottom surface is provided on one side of the semiconductor region 10 in the Y-axis direction, and a trench H2 having the third insulating film 53 as its bottom surface is provided on the other side of the semiconductor region 10 in the Y-axis direction. A second portion 32 of the gate electrode 30 is disposed in the trench H1. A third portion 33 of the gate electrode 30 is disposed in the trench H2. The second portion 32 and the third portion 33 will be described later. The semiconductor region 10 is sandwiched between the second portion 32 disposed in the trench H1 and the third portion 33 disposed in the trench H2 in the Y-axis direction.
The gate insulating film 20 is provided to cover an upper surface 10a, a first side surface 10b, and a second side surface 10c of the semiconductor region 10. The first side surface 10b is located on one side of the upper surface 10a in the Y-axis direction. The second side surface 10c is located on the other side of the upper surface 10a in the Y axis direction. The gate insulating film 20 includes, for example, an SiO2 film.
The gate electrode 30 covers the semiconductor region 10 with the gate insulating film 20 interposed therebetween. For example, the gate electrode 30 has a first portion 31 facing the upper surface 10a of the semiconductor region 10 with the gate insulating film 20 interposed therebetween, a second portion 32 facing the first side surface 10b of the semiconductor region 10 with the gate insulating film 20 interposed therebetween, and a third portion 33 facing the second side surface 10c of the semiconductor region 10 with the gate insulating film 20 interposed therebetween. Each of the second portion 32 and the third portion 33 are connected to a lower surface of the first portion 31.
Therefore, the gate electrode 30 can simultaneously apply a gate voltage to the upper surface 10a, the first side surface 10b, and the second side surface 10c of the semiconductor region 10. That is, the gate electrode 30 can simultaneously apply a gate voltage to the semiconductor region 10 from a total of three directions including the upper side and the left and right sides. Therefore, the gate electrode 30 can completely deplete the semiconductor region 10.
A length L11 of the first portion 31 in the X-axis direction is, for example, 300 nm or more and 500 nm or less. A length L12 of each of the second portion 32 and the third portion 33 in the Z-axis direction is, for example, 120 nm or more and 1200 nm or less. The gate electrode 30 is formed as, for example, a polysilicon (Poly-Si) film.
The source region 41 is provided on the front surface 2a of the semiconductor substrate 2 and in the vicinity thereof. The source region 41 is connected to one side of the semiconductor region 10. The drain region 42 is provided on the front surface 2a of the semiconductor substrate 2 and in the vicinity thereof. The drain region 42 is connected to the other side of the semiconductor region 10 in the X-axis direction. The source region 41 and the drain region 42 are in the first conductivity type (e.g., N type).
The first insulating film 51 is disposed between a lower surface 10d of the semiconductor region 10 and the semiconductor substrate 2. The second insulating film 52 is disposed between a lower surface 32d of the second portion 32 of the gate electrode 30 and the semiconductor substrate 2. The third insulating film 53 is disposed between a lower surface 33d of the third portion 33 of the gate electrode 30 and the semiconductor substrate 2. The second insulating film 52 and the third insulating film 53 are thinner than the first insulating film 51. A thickness d1 of the first insulating film 51 is 10 nm or more and 800 nm or less. A thickness d2 of each of the second insulating film 52 and the third insulating film 53 is 1 nm or more and 20 nm or less. The first insulating film 51, the second insulating film 52, and the third insulating film 53 are formed as, for example, SiO2 films.
The MOS transistor 3 according to the embodiments of the present disclosure may be referred to as a MOS transistor having a dug gate structure based on the shape in which the second portion 32 and the third portion 33 of the gate electrode 30 are disposed in the trenches H1 and H2. Alternatively, since the semiconductor region 10 has a fin shape, the MOS transistor 3 may be referred to as a fin field effect transistor (FinFET). Alternatively, the MOS transistor may be called a dug FinFET from the aforementioned two shapes.
(Method for Manufacturing Semiconductor Device)
Next, a method for manufacturing the semiconductor device 1 according to the first embodiment of the present disclosure will be described. In this example, as a method for manufacturing the semiconductor device 1, a method of forming the MOS transistor 3 having the dug gate structure as illustrated in
Note that the semiconductor device 1 is manufactured using various apparatuses such as a film forming apparatus (including a chemical vapor deposition (CVD) apparatus or a sputtering apparatus), an ion implantation apparatus, a heat treatment apparatus, an etching apparatus, and a chemical mechanical polishing (CMP) apparatus. Hereinafter, these apparatuses will be collectively referred to as a manufacturing apparatus.
In
Next, as illustrated in
Next, as illustrated in
Next, the manufacturing apparatus thermally oxidizes the semiconductor substrate 2. Therefore, as illustrated in
Next, as illustrated in
Next, as illustrated in
Next, as illustrated in
Next, the manufacturing apparatus removes the SiN films 71 and 73 by wet etching. Therefore, as illustrated in
Next, the manufacturing apparatus thermally oxidizes the semiconductor substrate 2 including the semiconductor region 10. Therefore, as illustrated in
Next, the manufacturing apparatus forms a polysilicon film upward of the semiconductor substrate 2 to fill the trenches H1 and H2, using the CVD method. Next, the manufacturing apparatus forms a resist pattern RP3 on the polysilicon film. The resist pattern RP3 has a shape to cover regions where gate electrodes are formed and open the other regions. Next, the manufacturing apparatus etches and removes the polysilicon film using the resist pattern RP3 as a mask. Therefore, the manufacturing apparatus forms a gate electrode 30 in the dug region and forms a gate electrode 80 in the planar region. Thereafter, the manufacturing apparatus removes the resist pattern RP3. Next, the manufacturing apparatus forms a source region and a drain region on the front surface 2a of the semiconductor substrate 2 both in the dug region and in the planar region.
Through the above-described process, the semiconductor device 1 is completed with the MOS transistor 3 having the dug gate structure and the MOS transistor having the planar gate structure on the same semiconductor substrate 2.
As described above, the semiconductor device 1 according to the first embodiment of the present disclosure includes a semiconductor substrate 2 and a MOS transistor 3 in a dug gate structure provided on the semiconductor substrate 2. The MOS transistor 3 includes a semiconductor region 10 in which a channel is formed, a gate electrode 30 covering the semiconductor region 10, a gate insulating film 20 disposed between the semiconductor region 10 and the gate electrode 30, and a first insulating film 51 disposed between the semiconductor region 10 and the semiconductor substrate 2. The semiconductor region 10 has an upper surface 10a, a first side surface 10b, and a second side surface 10c. The first side surface 10b is located on one side of the upper surface 10a in the Y-axis direction parallel to the upper surface 10a. The second side surface 10c is located on the other side of the upper surface 10a in the Y axis direction. The gate electrode 30 has a first portion 31 facing the upper surface 10a of the semiconductor region 10 with the gate insulating film 20 interposed therebetween, a second portion 32 facing the first side surface 10b of the semiconductor region 10 with the gate insulating film 20 interposed therebetween, and a third portion 33 facing the second side surface 10c of the semiconductor region 10 with the gate insulating film 20 interposed therebetween.
As a result, since the semiconductor region 10 and the semiconductor substrate 2 are insulated from each other by the first insulating film 51, a substrate bias effect can be reduced. Furthermore, since the first insulating film 51 is disposed downward of the semiconductor region 10, it is possible to suppress a wraparound of an electric field from the drain region 42 to the source region 41 downward of the semiconductor region 10. Therefore, even in a case where the source region 41 and the drain region 42 are formed deep in the depth direction (Z-axis direction) of the semiconductor substrate 2, it is possible to suppress an occurrence of a short channel effect due to the wraparound of the electric field described above.
Since the source region 41 and the drain region 42 can be formed deep in the Z-axis direction, and furthermore, the substrate bias effect can be reduced, the transconductance (gm) and the gain of the MOS transistor 3 can be increased. Note that, as a method of reducing the substrate bias effect, a silicon on insulator (SOI) substrate may be used, but the SOI substrate is expensive, resulting in an increase in semiconductor device manufacturing cost. According to the first embodiment of the present disclosure, it is not necessary to use an SOI substrate, and thus, it is possible to achieve both the suppression of the increase in manufacturing cost and the reduction of the substrate bias effect.
Furthermore, the gate electrode 30 can simultaneously apply a gate voltage to the semiconductor region 10 from a total of three directions including the upper side and the left and right sides. Therefore, the gate electrode 30 can completely deplete the semiconductor region 10 in an easy manner, thereby reducing an S value indicating a sub-threshold characteristic of the MOS transistor 3. The MOS transistor 3 can perform a switching operation at a high speed.
Furthermore, the second insulating film 52 and the third insulating film 53 are thinner than the first insulating film 51. That is, the lower surface 32d of the second portion 32 and the lower surface 33d of the third portion 33 are located closer to the semiconductor substrate 2 than the lower surface 10d of the semiconductor region 10. Therefore, even in a case where the trenches H1 and H2 are different in depth, it is possible to prevent a difference between a length of a region where the second portion 32 and the first side surface 10b of the semiconductor region 10 face each other in the Z-axis direction and a length of a region where the third portion 33 and the second side surface 10c of the semiconductor region 10 face each other in the Z-axis direction. Therefore, it is possible to suppress a variation in gate width of the gate electrode 30.
In the first embodiment of the present disclosure, it has been described that the gate electrode 30 faces the upper surface 10a, the first side surface 10b, and the second side surface 10c of the semiconductor region 10 with the gate insulating film 20 interposed therebetween. However, in the embodiments of the present disclosure, the positional relationship between the semiconductor region 10 and the gate electrode 30 is not limited thereto. In the embodiments of the present disclosure, in addition to the upper surface 10a, the first side surface 10b, and the second side surface 10c, a lower surface (i.e., a surface on a side closer to the semiconductor substrate 2) 10d of the semiconductor region 10 may also neighbor to the gate electrode 30 with the gate insulating film 20 interposed therebetween. Therefore, the gate width of the MOS transistor having the dug gate structure can be further expanded, and the complete depletion of the semiconductor region 10 can be easier.
Similarly to the MOS transistor 3 according to the first embodiment, the MOS transistor 3A according to the second embodiment is also a MOS transistor having a dug gate structure. In the MOS transistor 3A, a gate electrode 30A is disposed together with the gate insulating film 20 between the lower surface 10d of the semiconductor region 10 and the semiconductor substrate 2. For example, the gate electrode 30A has a first portion 31, a second portion 32, a third portion 33, and a fourth portion 34. The fourth portion 34 neighbors to the lower surface 10d of the semiconductor region 10 with the gate insulating film 20 interposed therebetween.
Therefore, the gate electrode 30A can simultaneously apply a gate voltage to the upper surface 10a, the first side surface 10b, the second side surface 10c, and the lower surface 10d of the semiconductor region 10. That is, the gate electrode 30A can simultaneously apply a gate voltage to the semiconductor region 10 from a total of four directions including the upper and lower sides and the left and right sides.
Next, a method for manufacturing the semiconductor device 1A according to the second embodiment of the present disclosure will be described. In this example, as a method for manufacturing the semiconductor device 1A, a method of forming the MOS transistor 3A having the dug gate structure as illustrated in
Next, the manufacturing apparatus etches and removes the SiO2 films 74 and 75 in the dug region using the resist pattern RP4 as a mask. Therefore, as illustrated in
Next, the manufacturing apparatus thermally oxidizes the semiconductor substrate 2 including the semiconductor region 10. Therefore, the manufacturing apparatus forms a gate insulating film 20 on the upper surface 10a, the first side surface 10b, the second side surface 10c, and the lower surface 10d of the semiconductor region 10 in the dug region, and forms a gate insulating film 20 on the front surface 2a of the semiconductor substrate 2 in the planar region.
Next, the manufacturing apparatus forms a polysilicon film upward of the semiconductor substrate 2 to fill the trenches H1 and H2 and the cavity H3, using the CVD method. Next, as illustrated in
Through the above-described process, the semiconductor device 1A is completed with the MOS transistor 3A having the dug gate structure and the MOS transistor having the planar gate structure on the same semiconductor substrate 2.
As described above, the semiconductor device 1A according to the second embodiment of the present disclosure includes a semiconductor substrate 2 and a MOS transistor 3A in a dug gate structure provided on the semiconductor substrate 2. The MOS transistor 3A includes a semiconductor region 10 in which a channel is formed, a gate electrode 30A covering the semiconductor region 10, a gate insulating film 20 disposed between the semiconductor region 10 and the gate electrode 30A, and a first insulating film 51 disposed between the semiconductor region 10 and the semiconductor substrate 2. The semiconductor region 10 has a lower surface 10d located on the opposite side of the upper surface 10a. The gate electrode 30A has a fourth portion 34 facing the lower surface 10d with the gate insulating film 20 interposed therebetween, in addition to the first portion 31, the second portion 32, and the third portion 33.
As a result, the semiconductor device 1A has effects similar to those of the semiconductor device 1 according to the first embodiment. Furthermore, the gate electrode 30A can simultaneously apply a gate voltage to the semiconductor region 10 from a total of four directions including the upper and lower sides and the left and right sides. Therefore, the gate electrode 30A can completely deplete the semiconductor region 10 in an easier manner.
The semiconductor device 1 according to the first embodiment or the semiconductor device 1A according to the second embodiment can be applied to an imaging device. Hereinafter, an example of the imaging device to which the semiconductor device 1 or 1A is applied will be described.
The first substrate unit 110 includes a semiconductor substrate 111 and a plurality of sensor pixels 112 provided on the semiconductor substrate 111. The plurality of sensor pixels 112 performs photoelectric conversion. The plurality of sensor pixels 112 is provided in a matrix form in a pixel region 113 of the first substrate unit 110. The second substrate unit 120 includes a semiconductor substrate 121, a readout circuit 122 provided on the semiconductor substrate 121, a plurality of pixel drive lines 123 provided on the semiconductor substrate 121 and extending in a row direction, and a plurality of vertical signal lines 124 provided on the semiconductor substrate 121 and extending in a column direction. The readout circuit 122 outputs a pixel signal based on a charge output from the sensor pixel 112. One readout circuit 122 is provided for every four sensor pixels 112.
The third substrate unit 130 includes a semiconductor substrate 131 and a logic circuit 132 provided on the semiconductor substrate 131. The logic circuit 132 has a pixel signal processing function, and includes, for example, a vertical drive circuit 133, a column signal processing circuit 134, a horizontal drive circuit 135, and a system control circuit 136.
The vertical drive circuit 133, for example, sequentially selects the plurality of sensor pixels 112 on a row basis. The column signal processing circuit 134, for example, performs correlated double sampling (CDS) processing on a pixel signal output from each of the sensor pixels 112 in the row selected by the vertical drive circuit 133. For example, by performing the CDS processing, the column signal processing circuit 134 extracts a signal level of the pixel signal and holds pixel data corresponding to an amount of light received by each of the sensor pixels 112. The horizontal drive circuit 135, for example, sequentially outputs the pixel data held in the column signal processing circuit 134 to the outside. The system control circuit 136, for example, controls driving of each of the blocks (the vertical drive circuit 133, the column signal processing circuit 134, and the horizontal drive circuit 135) in the logic circuit 132.
The sensor pixels 112 have identical components. In
Each of the sensor pixels 112 includes, for example, a photodiode PD (an example of a “light receiving element” in the present disclosure), a transfer transistor TR electrically connected to the photodiode PD, and a floating diffusion FD temporarily holding a charge output from the photodiode PD via the transfer transistor TR. The photodiode PD performs photoelectric conversion to generate a charge corresponding to an amount of light received. A cathode of the photodiode PD is electrically connected to a source of the transfer transistor TR, and an anode of the photodiode PD is electrically connected to a reference potential line (e.g., the ground). A drain of the transfer transistor TR is electrically connected to the floating diffusion FD, and a gate electrode of the transfer transistor TR is electrically connected to the pixel drive line 123. The transfer transistor TR is, for example, a complementary metal oxide semiconductor (CMOS) transistor.
The respective floating diffusions FD of the sensor pixels 112 sharing one readout circuit 122 are electrically connected to each other, and are electrically connected to an input terminal of the common readout circuit 122. The readout circuit 122 includes, for example, an amplification transistor AMP, a reset transistor RST, and a selection transistor SEL. Note that the selection transistor SEL may be omitted if necessary.
A source of the reset transistor RST (the input terminal of the readout circuit 122) is electrically connected to the floating diffusions FD, and a drain of the reset transistor RST is electrically connected to a power supply line VDD and a drain of the amplification transistor AMP. A gate electrode of the reset transistor RST is electrically connected to the pixel drive line 123 (see
When the transfer transistor TR is turned on, the transfer transistor TR transfers a charge of the photodiode PD to the floating diffusion FD. The reset transistor RST resets a potential of the floating diffusion FD to a predetermined potential. When the reset transistor RST is turned on, the potential of the floating diffusion FD is reset to a potential of the power supply line VDD. The selection transistor SEL controls a timing at a pixel signal is output from the readout circuit 122.
The amplification transistor AMP generates a voltage signal corresponding to the level of the charge held in the floating diffusion FD as a pixel signal. The amplification transistor AMP constitutes a source follower type amplifier, and outputs a pixel signal having a voltage corresponding to the level of the charge generated in the photodiode PD. When the selection transistor SEL is turned on, the amplification transistor AMP amplifies the potential of the floating diffusion FD, and outputs a voltage corresponding to the potential to the column signal processing circuit 134 via the vertical signal line 124.
In the third embodiment of the present disclosure, the MOS transistor 3 described in the first embodiment or the MOS transistor 3A described in the second embodiment is used for one or more of the reset transistor RST, the amplification transistor AMP, the transfer transistor TR, and the selection transistor SEL.
For example, as illustrated in
Furthermore, as illustrated in
As described above, the imaging device 100 according to the third embodiment of the present disclosure includes a photodiode PD and a semiconductor device for transmitting an electric signal photoelectrically converted by the photodiode PD. The imaging device 100 includes the semiconductor device 1 (or the semiconductor device 1A) having a reduced substrate bias effect as at least a part of the semiconductor device for transmitting an electric signal. Therefore, the performance of the imaging device 100 can be improved, for example, by reducing noise of imaging data or the like.
It should be understood that, although the present disclosure has been described with reference to the embodiments and the modifications above, the descriptions and the drawings constituting a part of this disclosure do not limit the present disclosure. From this disclosure, various alternative embodiments, examples, and application techniques will be apparent to those skilled in the art.
For example, a silicon oxynitride (SiON) film or a silicon nitride (Si3N4) film can also be used as the gate insulating film 20. Furthermore, a composite film formed by stacking several single-layer insulating films or the like can also be used as the gate insulating film 20. A MOSFET using an insulating film other than the SiO2 film as the gate insulating film 20 may be referred to as a MISFET. The MISFET refers to a more generic field effect transistor including the MOSFET.
As described above, it is needless to say that the present technology includes various embodiments and the like that are not described herein. At least one of various omissions, substitutions, and alterations of the components may be made without departing from the gist of the embodiments and modifications described above. Furthermore, the effects described in the present specification are merely examples and are not limited, and there may be other effects as well.
Note that the present disclosure can also have the following configurations.
(1) A semiconductor device including:
a semiconductor substrate; and
a field effect transistor provided on a first main surface of the semiconductor substrate,
in which the field effect transistor includes a semiconductor region in which a channel is formed, a gate electrode covering the semiconductor region, a gate insulating film disposed between the semiconductor region and the gate electrode, and a first insulating film disposed between the semiconductor region and the semiconductor substrate,
the semiconductor region has an upper surface, a first side surface located on one side of the upper surface in a first direction parallel to the upper surface, and a second side surface located on the other side of the upper surface in the first direction, and
the gate electrode has a first portion facing the upper surface with the gate insulating film interposed therebetween, a second portion facing the first side surface with the gate insulating film interposed therebetween, and a third portion facing the second side surface with the gate insulating film interposed therebetween.
(2) The semiconductor device according to (1), in which a lower surface of the second portion and a lower surface of the third portion are located closer to the semiconductor substrate than a lower surface of the semiconductor region.
(3) The semiconductor device according to (1) or (2), further including:
a second insulating film disposed between the semiconductor substrate and the second portion; and
a third insulating film disposed between the semiconductor substrate and the third portion,
in which the second insulating film and the third insulating film are thinner than the first insulating film.
(4) The semiconductor device according to any one of (1) to (3), in which the semiconductor region has a lower surface located on an opposite side of the upper surface, and
the gate electrode has a fourth portion facing the lower surface with the gate insulating film interposed therebetween.
(5) The semiconductor device according to any one of (1) to (4), further including a source region and a drain region provided on the semiconductor substrate,
in which the source region is connected to one side of the semiconductor region in a second direction parallel to the upper surface and orthogonal to the first direction, and
the drain region is connected to the other side of the semiconductor region in the second direction.
(6) The semiconductor device according to (5), in which a length of the gate electrode in the second direction is 300 nm or more and 500 nm or less.
(7) The semiconductor device according to any one of (1) to (6), in which a length of the semiconductor region in a third direction orthogonal to the upper surface is 100 nm or more and 1000 nm or less.
(8) An imaging device including:
a light receiving element; and
a semiconductor device configured to transmit an electric signal photoelectrically converted by the light receiving element,
in which the semiconductor device includes a semiconductor substrate, and a field effect transistor provided on the semiconductor substrate,
the field effect transistor includes a semiconductor region in which a channel is formed, a gate electrode covering the semiconductor region, a gate insulating film disposed between the semiconductor region and the gate electrode, and a first insulating film disposed between the semiconductor region and the semiconductor substrate,
the semiconductor region has an upper surface, a first side surface located on one side of the upper surface in a first direction parallel to the upper surface, and a second side surface located on the other side of the upper surface in the first direction, and
the gate electrode has a first portion facing the upper surface with the gate insulating film interposed therebetween, a second portion facing the first side surface with the gate insulating film interposed therebetween, and a third portion facing the second side surface with the gate insulating film interposed therebetween.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-129745 | Jul 2019 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2020/020667 | 5/26/2020 | WO |
