SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Abstract

A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate and a dummy MTJ between the first MTJ and the second MTJ, in which a bottom surface of the dummy MTJ is not connected to any metal. Preferably, the semiconductor device further includes a first metal interconnection under the first MTJ, a second metal interconnection under the second MTJ, and a first inter-metal dielectric (IMD) layer around the first metal interconnection and the second metal interconnection and directly under the dummy MTJ.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a semiconductor device and method for fabricating the same, and more particularly to a magnetoresistive random access memory (MRAM) and method for fabricating the same.

2. Description of the Prior Art

Magnetoresistance (MR) effect has been known as a kind of effect caused by altering the resistance of a material through variation of outside magnetic field. The physical definition of such effect is defined as a variation in resistance obtained by dividing a difference in resistance under no magnetic interference by the original resistance. Currently, MR effect has been successfully utilized in production of hard disks thereby having important commercial values. Moreover, the characterization of utilizing GMR materials to generate different resistance under different magnetized states could also be used to fabricate MRAM devices, which typically has the advantage of keeping stored data even when the device is not connected to an electrical source.

The aforementioned MR effect has also been used in magnetic field sensor areas including but not limited to for example electronic compass components used in global positioning system (GPS) of cellular phones for providing information regarding moving location to users. Currently, various magnetic field sensor technologies such as anisotropic magnetoresistance (AMR) sensors, GMR sensors, magnetic tunneling junction (MTJ) sensors have been widely developed in the market. Nevertheless, most of these products still pose numerous shortcomings such as high chip area, high cost, high power consumption, limited sensibility, and easily affected by temperature variation and how to come up with an improved device to resolve these issues has become an important task in this field.

SUMMARY OF THE INVENTION

According to an embodiment of the present invention, a semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate and a dummy MTJ between the first MTJ and the second MTJ, in which a bottom surface of the dummy MTJ is not connected to any metal. Preferably, the semiconductor device further includes a first metal interconnection under the first MTJ, a second metal interconnection under the second MTJ, and a first inter-metal dielectric (IMD) layer around the first metal interconnection and the second metal interconnection and directly under the dummy MTJ.

According to another aspect of the present invention, a semiconductor device includes: a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, wherein the first MTJ is immediately adjacent to the second MTJ; a first dummy MTJ adjacent to one side of the first MTJ; and a second dummy MTJ adjacent to one side of the second MTJ. Preferably, bottom surfaces of the first dummy MTJ and the second dummy MTJ are not connected to any metal.

These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a top view for fabricating a semiconductor device, or more specifically a MRAM device according to an embodiment of the present invention.

FIG. 2 illustrates a cross-section view of FIG. 1 along the sectional line AA′ for fabricating the semiconductor device.

FIG. 3 illustrates a cross-section view of FIG. 1 along the sectional line BB′ for fabricating the semiconductor device.

FIG. 4 illustrates a structural view of a semiconductor device taken along the sectional line AA′ of FIG. 1 according to an embodiment of the present invention.

FIG. 5 illustrates a structural view of a semiconductor device taken along the sectional line BB′ of FIG. 1 according to an embodiment of the present invention.

DETAILED DESCRIPTION

Referring to FIGS. 1-3, FIG. 1 illustrates a top view for fabricating a semiconductor device, or more specifically a MRAM device according to an embodiment of the present invention, FIG. 2 illustrates a cross-section view of FIG. 1 along the sectional line AA′ for fabricating the semiconductor device, and FIG. 3 illustrates a cross-section view of FIG. 1 along the sectional line BB′ for fabricating the semiconductor device. As shown in FIGS. 1-3, a substrate 12 made of semiconductor material is first provided, in which the semiconductor material could be selected from the group consisting of silicon (Si), germanium (Ge), Si—Ge compounds, silicon carbide (SiC), and gallium arsenide (GaAs), and a MTJ region 14 and a logic region 16 are defined on the substrate 12.

Active devices such as metal-oxide semiconductor (MOS) transistors, passive devices, conductive layers, and interlayer dielectric (ILD) layer 18 could also be formed on top of the substrate 12. More specifically, planar MOS transistors or non-planar (such as FinFETs) MOS transistors could be formed on the substrate 12, in which the MOS transistors could include transistor elements such as gate structures 20 (for example metal gates) and source regions 22, drain regions 24, spacers, epitaxial layers, and contact etch stop layer (CESL). The ILD layer 18 could be formed on the substrate 12 to cover the MOS transistors, and a plurality of contact plugs 26 could be formed in the ILD layer 18 to electrically connect to the gate structures 20 and/or source regions 22 and drain regions 24 of MOS transistors. Since the fabrication of planar or non-planar transistors and ILD layer is well known to those skilled in the art, the details of which are not explained herein for the sake of brevity.

Next, metal interconnect structures 28, 30 are sequentially formed on the ILD layer 18 on the MTJ region 14 and the edge region 16 to electrically connect the aforementioned contact plugs 26, in which the metal interconnect structure 28 includes a stop layer 32 disposed on the ILD layer 18, an inter-metal dielectric (IMD) layer 34, and metal interconnections 36 embedded in the IMD layer 34, and the metal interconnect structure 30 includes a stop layer 38, an IMD layer 40, and metal interconnections 42 embedded in the stop layer 38 and the IMD layer 40.

In this embodiment, each of the metal interconnections 36 from the metal interconnect structure 28 preferably includes a trench conductor and each of the metal interconnections 42 from the metal interconnect structure 30 on the MTJ region 14 includes a via conductor. Preferably, each of the metal interconnections 36, 42 from the metal interconnect structures 28, 30 could be embedded within the IMD layers 34, 40 and/or stop layer 32, 38 according to a single damascene process or dual damascene process. For instance, each of the metal interconnections 36, 42 could further includes a barrier layer and a metal layer, in which the barrier layer could be selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and tantalum nitride (TaN) and the metal layer could be selected from the group consisting of tungsten (W), copper (Cu), aluminum (Al), titanium aluminide (TiAl), and cobalt tungsten phosphide (CoWP). Since single damascene process and dual damascene process are well known to those skilled in the art, the details of which are not explained herein for the sake of brevity. In this embodiment, the metal interconnections 36 are preferably made of copper, the metal interconnections 42 are made of tungsten, the IMD layers 34, 40 are preferably made of silicon oxide, and the stop layers 32, 38 are preferably made of nitrogen doped carbide (NDC), silicon nitride, silicon carbon nitride (SiCN), or combination thereof.

Next, a MTJ stack (not shown) or stack structure is formed on the metal interconnect structure 30, and one or more photo-etching process is conducted to remove part of the MTJ stack to form a plurality of MTJs such as MTJs 44, 48, 52, 58, 62, 64 and a plurality of dummy MTJs such as dummy MTJs 46, 50, 54, 56, 60 on the MTJ region 14, in which each of the MTJs 44, 48, 52, 58, 62, 64 is disposed on the metal interconnections 42 while each of the dummy MTJs 46, 50, 54, 56, 60 is directly disposed on the IMD layer 40. It should be noted that the photo-etching process conducted to pattern the MTJ stack could be accomplished by a reactive ion etching (RIE) process and/or ion beam etching (IBE) process. Due to the characteristics of the IBE process, the top surface of the remaining IMD layer 40 is slightly lower than the top surface of the metal interconnections 42 after the IBE process and the top surface of the IMD layer 40 also reveals a curve or an arc.

Moreover, the MTJs 44, 48, 52, 58, 62, 64 and the dummy MTJs 46, 50, 54, 56, 60 formed at this stage could have different arrangements depending on the perspective of different cross-sections being taken. For instance, if viewed from an angle according to the sectional line AA′ in FIGS. 1-2, the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54 are arranged by repeating one dummy MTJ (such as 46, 50, 54) immediately followed by one MTJ (such as 44, 48, 52). Alternatively, if viewed from an angle according to the sectional line BB′ in FIGS. 1 and 3, the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60 are arranged by repeating one dummy MTJ (such as 56, 60) immediately followed by two MTJs (such as 52, 58, 62, 64).

In this embodiment, each of the MTJs 44, 48, 52, 58, 62, 64 and dummy MTJs 46, 50, 54, 56, 60 includes a fixed layer 66, a barrier layer 68, and a free layer 70, a bottom electrode 72 is disposed under each of the MTJs 44, 48, 52, 58, 62, 64 and dummy MTJs 46, 50, 54, 56, 60, and a top electrode 74 is disposed on top of each of the MTJs 44, 48, 52, 58, 62, 64 and dummy MTJs 46, 50, 54, 56, 60. In this embodiment, the bottom electrodes 72 and top electrodes 74 are preferably made of conductive material including but not limited to for example Ta, Pt, Cu, Au, Al, TiN, or combination thereof. The fixed layer 66 could be made of antiferromagnetic (AFM) material including but not limited to for example ferromanganese (FeMn), platinum manganese (PtMn), iridium manganese (IrMn), nickel oxide (NiO), or combination thereof, in which the fixed layer 66 is formed to fix or limit the direction of magnetic moment of adjacent layers. The barrier layer 68 could be made of insulating material including but not limited to for example oxides such as aluminum oxide (AlO_x) or magnesium oxide (MgO). The free layer 70 could be made of ferromagnetic material including but not limited to for example iron, cobalt, nickel, or alloys thereof such as cobalt-iron-boron (CoFeB), in which the magnetized direction of the free layer 70 could be altered freely depending on the influence of outside magnetic field.

Next, a cap layer 78 and an IMD layer 80 are formed on the MTJs 44, 48, 52, 58, 62, 64 and dummy MTJs 46, 50, 54, 56, 60 to cover the IMD layer 40, and a planarizing process such as a chemical mechanical polishing (CMP) process is conducted to remove part of the IMD layer 80 so that the top surfaces of the cap layer 78 and IMD layer 80 are coplanar and higher than the top surface of the top electrodes 74. In this embodiment, the cap layer 78 preferably includes silicon nitride, but could also be made of other dielectric materials including but not limited to for example silicon oxide, silicon oxynitride (SiON), and/or silicon carbon nitride (SiCN).

Next, a stop layer 82 and another IMD layer 84 are formed on the MTJs 44, 48, 52, 58, 62, 64 and dummy MTJs 46, 50, 54, 56, 60 to cover the surface of the cap layer 78 and IMD layer 80, and one or more photo-etching process is conducted to remove part of the IMD layer 84 and part of the stop layer 82 on both MTJ region 14 and logic region 16 to form contact holes (not shown). Next, a barrier layer and a metal layer are formed to fill the contact holes completely, in which the barrier layer could include titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), or combination thereof and the metal layer could include tungsten (W), copper (Cu), aluminum (Al), titanium aluminide (TiAl), cobalt tungsten phosphide (CoWP), or combination thereof. Next, a planarizing process such as CMP is conducted to remove part of the metal layer and part of the barrier layer to form metal interconnections 86, 88 electrically connecting the top electrodes 74 on the MTJ region 14 and other metal interconnections on the logic region 16. Next, another stop layer 90 is formed on the IMD layer 84 to cover the metal interconnections 86, 88. This completes the fabrication of a semiconductor device according to an embodiment of the present invention.

Referring again to FIG. 2, FIG. 2 illustrates a structural view of a semiconductor device taken along the sectional line AA′ of FIG. 1 according to an embodiment of the present invention. As shown in FIG. 2, the semiconductor device includes a plurality of MTJs 44, 48, 52 and a plurality of dummy MTJs 46, 50, 54 disposed on the substrate 12, a top electrode 74 disposed on each of the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54, a bottom electrode 72 disposed under each of the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54, metal interconnections 42 under the bottom electrodes 72 and electrically connected to the metal interconnections or contact plugs 26 disposed in lower level ILD layer 18, an IMD layer 40 surrounding the metal interconnections 42, a cap layer 78 around the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54 and on the IMD layer 40, and air gaps 76 enclosed within the cap layer 78 between MTJs 44, 48, 52 and dummy MTJs 46, 50, 54.

Preferably, the arrangement of MTJs in this embodiment involves placing a dummy MTJ (46, 50, or 54) immediately adjacent to a MTJ (44, 48, or 52) and repeating such arrangement such that each of the dummy MTJs is disposed between two metal interconnections 36, in which the bottom electrode 72 under the MTJs 44, 48, 52 is directly connected to metal or metal interconnections 42 while the bottom electrodes 72 under the dummy MTJs 46, 50, 54 are not connected to or contacting any metal but instead contacting the IMD layer 40 directly. Moreover, each of the MTJs 44, 48, 52, top electrodes 74, and/or bottom electrodes 72 are preferably aligned to the metal interconnections or contact plugs 26 within the lower level ILD layer 18, in which the definition of alignment in this instance could refer to either aligning the center of each of the MTJs 44, 48, 52 to the center of each of the contact plugs 26 or aligning an edge of each of the MTJs 44, 48, 52 to an edge of each of the contact plugs 26, which are all within the scope of the present invention.

Preferably, the cap layer 78 made of silicon nitride in this embodiment is disposed to fill the space between MTJs 44, 48, 52 and dummy MTJs 46, 50, 54 so that no IMD layer is disposed between the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54. The IMD layer 80 is only disposed on the cap layer 78 adjacent to the MTJ and/or dummy MTJ on the edge of the MTJ region 14, such as on the cap layer 78 left to the MTJ 44 and right to the dummy MTJ 54, and each of the air gaps 76 is surrounded by the cap layer 78 between the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54.

Referring to FIG. 3, FIG. 3 illustrates a structural view of a semiconductor device taken along the sectional line BB′ of FIG. 1 according to an embodiment of the present invention. As shown in FIG. 3, the semiconductor device includes a plurality of MTJs 52, 58, 62, 64 and a plurality of dummy MTJs 56, 60 on the substrate 12, a top electrode 74 disposed on each of the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60, a bottom electrode 72 disposed under each of the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60, metal interconnections 42 under the bottom electrodes 72 and electrically connected to the metal interconnections or contact plugs 26 disposed in lower level ILD layer 18, an IMD layer 40 surrounding the metal interconnections 42, a cap layer 78 around the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60 and on the IMD layer 40, and air gaps 76 enclosed by the cap layer 78 between MTJs 52, 58, 62, 64 and dummy MTJs 56, 60.

Preferably, the arrangement of MTJs in this embodiment involves placing a dummy MTJ (56 or 60) immediately adjacent to two MTJs (52, 58, 62, or 64) and repeating such arrangement such that each of the dummy MTJs is disposed between two metal interconnections 36, in which the bottom electrodes 72 under the MTJs 52, 58, 62, 64 is directly connected to metal or metal interconnections 42 while the bottom electrodes 72 under the dummy MTJs 56, 60 are not connected to or contacting any metal but instead contacting the IMD layer 40 directly. Moreover, each of the MTJs 52, 58, 62, 64, top electrodes 74, and/or bottom electrodes 72 are preferably aligned to the metal interconnections or contact plugs 26 within the lower level ILD layer 18, in which the definition of alignment in this instance could refer to either aligning the center of each of the MTJs 52, 58, 62, 64 to the center of each of the contact plugs 26 or aligning an edge of each of the MTJs 52, 58, 62, 64 to an edge of each of the contact plugs 26, which are all within the scope of the present invention.

Similar to the aforementioned embodiment, the cap layer 78 made of silicon nitride in this embodiment is disposed to fill the space between MTJs 52, 58, 62, 64 and dummy MTJs 56, 60 so that no IMD layer is disposed between the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60. The IMD layer 80 is only disposed on the cap layer 78 adjacent to the MTJ and/or dummy MTJ on the edge of the MTJ region 14, such as on the cap layer 78 right to the MTJ 64 and left to the dummy MTJ 56, and each of the air gaps 76 is surrounded by the cap layer 78 between the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60.

Referring to FIG. 4, FIG. 4 illustrates a structural view of a semiconductor device taken along the sectional line AA′ of FIG. 1 according to an embodiment of the present invention. As shown in FIG. 4, the semiconductor device includes a plurality of MTJs 44, 48, 52 and a plurality of dummy MTJs 46, 50, 54 disposed on the substrate 12, a top electrode 74 disposed on each of the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54, a bottom electrode 72 disposed under each of the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54, metal interconnections 42 under the bottom electrodes 72 and electrically connected to the metal interconnections or contact plugs 26 disposed in lower level ILD layer 18, an IMD layer 40 surrounding the metal interconnections 42, and a cap layer 78 around the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54 and on the IMD layer 40.

Preferably, the arrangement of MTJs in this embodiment involves placing a dummy MTJ (46, 50, or 54) immediately adjacent to a MTJ (44, 48, or 52) and repeating such arrangement such that each of the dummy MTJs is disposed between two metal interconnections 36. In contrast to not forming any IMD layer between the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54 as disclosed in the embodiment shown in FIG. 2, a cap layer 78 and an IMD layer 80 disposed on the cap layer 78 are formed between the MTJs 44, 48, 52 and dummy MTJs 46, 50, 54.

Referring to FIG. 5, FIG. 5 illustrates a structural view of a semiconductor device taken along the sectional line BB′ of FIG. 1 according to an embodiment of the present invention. As shown in FIG. 5, the semiconductor device includes a plurality of MTJs 52, 58, 62, 64 and a plurality of dummy MTJs 56, 60 on the substrate 12, a top electrode 74 disposed on each of the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60, a bottom electrode 72 disposed under each of the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60, metal interconnections 42 under the bottom electrodes 72 and electrically connected to the metal interconnections or contact plugs 26 disposed in lower level ILD layer 18, an IMD layer 40 surrounding the metal interconnections 42, and a cap layer 78 around the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60 and on the IMD layer 40.

Preferably, the arrangement of MTJs in this embodiment involves placing a dummy MTJ (56 or 60) immediately adjacent to two MTJs (52, 58, 62, or 64) and repeating such arrangement such that each of the dummy MTJs is disposed between two metal interconnections 36. In contrast to not forming any IMD layer between the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60 as disclosed in the embodiment shown in FIG. 3, a cap layer 78 and an IMD layer 80 disposed on the cap layer 78 are formed between the MTJs 52, 58, 62, 64 and dummy MTJs 56, 60.

Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims

1. A semiconductor device, comprising: a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; anda dummy MTJ between the first MTJ and the second MTJ, wherein a bottom surface of the dummy MTJ is not connected to any metal.

2. The semiconductor device of claim 1, further comprising: a first metal interconnection under the first MTJ;a second metal interconnection under the second MTJ; anda first inter-metal dielectric (IMD) layer around the first metal interconnection and the second metal interconnection and directly under the dummy MTJ.

3. The semiconductor device of claim 2, further comprising a cap layer around the dummy MTJ, the first MTJ, and the second MTJ and on the first IMD layer.

4. The semiconductor device of claim 3, wherein the cap layer comprises silicon nitride.

5. The semiconductor device of claim 3, further comprising a first air gap enclosed by the cap layer between the dummy MTJ and the first MTJ.

6. The semiconductor device of claim 3, further comprising a second air gap enclosed by the cap layer between the dummy MTJ and the second MTJ.

7. The semiconductor device of claim 3, further comprising a top electrode on the dummy MTJ, wherein the cap layer contacts a top surface of the top electrode directly.

8. The semiconductor device of claim 2, further comprising: a cap layer around the dummy MTJ, the first MTJ, and the second MTJ and on the first IMD layer; anda second IMD layer on the cap layer.

9. The semiconductor device of claim 8, wherein top surfaces of the cap layer and the second IMD layer are coplanar.

10. The semiconductor device of claim 2, further comprising a stop layer around the first metal interconnection and the second metal interconnection and under the first IMD layer.

11. The semiconductor device of claim 10, wherein bottom surfaces of the stop layer and the first metal interconnection are coplanar.

12. A semiconductor device, comprising: a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, wherein the first MTJ is immediately adjacent to the second MTJ;a first dummy MTJ adjacent to one side of the first MTJ; anda second dummy MTJ adjacent to one side of the second MTJ, wherein bottom surfaces of the first dummy MTJ and the second dummy MTJ are not connected to any metal.

13. The semiconductor device of claim 12, further comprising: a metal interconnection under the first MTJ; anda first inter-metal dielectric (IMD) layer around the metal interconnection and directly under the first dummy MTJ and the second MTJ.

14. The semiconductor device of claim 13, further comprising a cap layer around the first MTJ, the second MTJ, the first dummy MTJ, and the second dummy MTJ and on the first IMD layer.

15. The semiconductor device of claim 14, wherein the cap layer comprises silicon nitride.

16. The semiconductor device of claim 14, further comprising an air gap enclosed by the cap layer between the first dummy MTJ and the first MTJ.

17. The semiconductor device of claim 14, further comprising a top electrode on each of the first dummy MTJ and the second dummy MTJ, wherein the cap layer contacts a top surface of the top electrode directly.

18. The semiconductor device of claim 13, further comprising: a cap layer around the first MTJ, the second MTJ, the first dummy MTJ, and the second dummy MTJ and on the first IMD layer; anda second IMD layer on the cap layer.

19. The semiconductor device of claim 18, wherein top surfaces of the cap layer and the second IMD layer are coplanar.

20. The semiconductor device of claim 13, further comprising a stop layer around the metal interconnection and under the first IMD layer, wherein bottom surfaces of the stop layer and the metal interconnection are coplanar.