Claims
- 1. A semiconductor device comprising:a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; a first insulation film formed above an upper surface and a side wall of the gate; a second insulation film formed on the first insulation film and the semiconductor substrate; a third insulation film formed on the second insulation film, the third insulation film having etching characteristics different from that of the second insulation film; a fourth insulation film formed on the third insulation film; a through-hole formed through the second insulation film, the third insulation film and the fourth insulation film, and opened above one of the impurity diffused regions; and a capacitor including a storage electrode formed along substantially all over a sidewall and a bottom of the through-hole, and electrically connected to said one of the impurity diffused regions, a dielectric film formed on the storage electrode, and an opposed electrode formed on the dielectric film, a diameter of the through-hole at the third insulation film being larger than that at the fourth insulation film.
- 2. A semiconductor device according to claim 1, wherein the opposed electrode is formed extending over the third insulation film.
- 3. A semiconductor device according to claim 1, further comprising:a fifth insulation film formed between the first insulation film and the second insulation film.
- 4. A semiconductor device according to claim 1,wherein a diameter of the through-hole at the second insulation film being larger than at the third insulation film.
- 5. A semiconductor device comprising:a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate: a first insulation film formed above an upper surface and a side wall of the gate; a second insulation film formed on the first insulation film and the semiconductor substrate; a third insulation film formed on the second insulation film, the third insulation film having etching characteristics different from that of the second insulation film; a fourth insulation film formed on the third insulation film; a through-hole formed through the second insulation film, the third insulation film and the fourth insulation film, and opened above one of the impurity diffused regions; and a capacitor including a storage electrode formed along substantially all over a sidewall and a bottom of the through-hole, and electrically connected to said one of the impurity diffused regions, a dielectric film formed on the storage electrode, and an opposed electrode formed on the dielectric film, a diameter of the through-hole at the third insulation film being larger than that at the fourth insulation film and at the second insulation film.
- 6. A semiconductor device according to claim 5, wherein the opposed electrode is formed extending over the third insulation film.
- 7. A semiconductor device according to claim 5, further comprising:a fifth insulation film formed between the first insulation film and the second insulation film.
- 8. A semiconductor device according to claim 5,wherein a diameter of the through-hole at the second insulation film being substantially the same as the diameter of the through-hole at the fourth insulation film.
Priority Claims (3)
Number |
Date |
Country |
Kind |
7-013748 |
Jan 1995 |
JP |
|
7-310737 |
Nov 1995 |
JP |
|
8-243687 |
Sep 1996 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part of Ser. No. 08/592,481, now U.S. Pat. No. 5,874,756 filed on Jan. 26, 1996.
US Referenced Citations (9)
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
08/592481 |
Jan 1996 |
US |
Child |
08/928770 |
|
US |