Claims
- 1. A method for fabricating a semiconductor device, comprising the steps of:forming a capacitor device including a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode on a substrate; forming an interlevel insulating film, having a contact hole reaching the capacitive upper electrode, over the capacitor device; depositing a conductive film preventing the passage of titanium atoms therethrough so as to cover the entire surface of the interlevel insulating film as well as the contact hole; patterning the conductive film such that at least a part of the conductive film located inside the contact hole is left, thereby forming an anti-diffusion film out of the conductive film; and forming, on the interlevel insulating film, a metal interconnection including a titanium film such that the metal interconnection is electrically connected to the capacitive upper electrode via the anti-diffusion film.
- 2. The method for fabricating a semiconductor device of claim 1, wherein the conductive film is a metal nitride film or metal oxide film having conductivity.
- 3. The method for fabricating a semiconductor device of claim 1, wherein the capacitive insulating film is a ferroelectric film or a high dielectric film.
- 4. The method for fabricating a semiconductor device of claim 1, wherein the titanium film is an adhesive layer, formed as a lowermost layer of the metal interconnection, for improving adhesion between the metal interconnection and the capacitive upper electrode,and wherein the anti-diffusion film is a titanium nitride film.
- 5. The method for fabricating a semiconductor device of claim 1, wherein the capacitive upper electrode has a crystal structure including a grain boundary.
Priority Claims (2)
Number |
Date |
Country |
Kind |
9-198118 |
Jul 1997 |
JP |
|
9-198119 |
Jul 1997 |
JP |
|
Parent Case Info
This application is a Divisional of application Ser. No. 09/120,893 filed Jul. 23, 1998 now U.S. Pat. No. 6,239,462.
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