Claims
- 1. A semiconductor device having a thin film transistor, said semiconductor device comprising:an insulating film formed over a substrate; and a semiconductor film formed over said insulating film, wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of nitrogen to silicon therein undergoes a continuous change within a range of 0.3 to 1.6.
- 2. A semiconductor device having a thin film transistor, said semiconductor device comprising:an insulating film formed over a substrate; and a semiconductor film formed over said insulating film, wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of oxygen to silicon therein undergoes a continuous change within a range of 0.1 to 1.7.
- 3. A semiconductor device having a thin film transistor, said semiconductor device comprising:an insulating film formed over a substrate; and a semiconductor film formed over said insulating film, wherein said insulating film comprises a silicon nitride oxide film in which a concentration ratio of nitrogen to silicon therein undergoes a continuous change within a range of 0.3 to 1.6, and wherein a concentration ratio of oxygen to silicon therein undergoes a continuous change within a range of between 0.1 to 1.7.
- 4. A semiconductor device having a thin film transistor, said semiconductor device comprising:a first insulating film comprising a silicon nitride oxide film formed over a substrate; a second insulating film formed in contact with said first insulating film; and a semiconductor film formed over said first and second insulating films, wherein a concentration ratio of nitrogen to silicon in said first insulating film undergoes a continuous change within a range of 0.3 to 1.6.
- 5. A semiconductor device having a thin film transistor, said semiconductor device comprising:a first insulating film comprising a silicon nitride oxide film formed over a substrate; a second insulating film formed in contact with said first insulating film; and a semiconductor film formed over said first and second insulating films, wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7.
- 6. A semiconductor device having a thin film transistor, said semiconductor device comprising:a silicon nitride oxide film formed over a substrate; a silicon oxide film formed in contact with said silicon nitride oxide film; and a semiconductor film formed over said silicon oxide film, wherein a concentration ratio of nitrogen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.3 to 1.6.
- 7. A semiconductor device having a thin film transistor, said semiconductor device comprising:a silicon nitride oxide film formed over a substrate; a silicon oxide film formed in contact with said silicon nitride oxide film; and a semiconductor film formed over said silicon oxide film, wherein a concentration ratio of oxygen to silicon in said silicon nitride oxide film undergoes a continuous change within a range of 0.1 to 1.7.
- 8. A semiconductor device according to any one of claims 1, 3, 4 and 6, wherein said concentration ratio of nitrogen to silicon in said silicon nitride oxide film continuously decreases toward an interface of said semiconductor film side.
- 9. A semiconductor device according to any one of claims 2, 3, 5 and 7, wherein said concentration ratio of oxygen to silicon in said silicon nitride oxide film continuously increases toward an interface of said semiconductor film side.
- 10. A semiconductor device according to any one of claims 1 to 7, wherein said semiconductor device is selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation unit, a car stereo, a personal computer, and a portable information terminal.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-360882 |
Dec 1999 |
JP |
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Parent Case Info
This application is a divisional of application Ser. No. 09/739,269, filed Dec. 19, 2000, now U.S. Pat. No. 6,632,708.
US Referenced Citations (10)
Foreign Referenced Citations (4)
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07-130652 |
May 1995 |
JP |
08-078329 |
Mar 1996 |
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10-135468 |
May 1998 |
JP |
10-135469 |
May 1998 |
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Non-Patent Literature Citations (3)
Entry |
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Bona et al., “Versatile Silicon-Oxynitride Planar Lightwave Circuits for Interconnect Applications,” IEEE 1999, pp. 145-148. |
Coluzza et al., “Silicon Oxynitride and Silicon Oxynitride-Silicon Interface: A Photoemission Study,” IEEE 1989, pp. 2821-2824. |