Claims
- 1. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a mask over said gate insulating film; forming impurity regions in said semiconductor film by introducing an impurity element by using said mask; removing said mask; forming a gate electrode over said gate insulating film so that said gate electrode partially overlaps said impurity regions; and annealing said semiconductor film so that said impurity element therein is activated, wherein said gate electrode comprises a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer, wherein said second conductive layer comprises aluminum.
- 2. A method according to claim 1, wherein said first conductive layer comprises tantalum.
- 3. A method according to claim 1, wherein said third conductive layer comprises tantalum.
- 4. A method according to claim 1, wherein said mask is narrower than in the direction of the length of a channel region than said gate electrode.
- 5. A method according to claim 1, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
- 6. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a first mask over said gate insulating film; forming first impurity regions in said semiconductor film by introducing a first impurity element by using said first mask; removing said first mask; forming a gate electrode over said gate insulating film so that said gate electrode partially overlaps said first impurity regions; forming a second mask over said gate electrode; forming second impurity regions in said semiconductor film by introducing a second impurity element by using said second mask; and annealing said semiconductor film so that said first and second impurity elements therein are activated, wherein said gate electrode comprises a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer, wherein said second conductive layer comprises aluminum.
- 7. A method according to claim 6, wherein said first conductive layer comprises tantalum.
- 8. A method according to claim 6, wherein said third conductive layer comprises tantalum.
- 9. A method according to claim 6, wherein said mask is narrower than in the direction of the length of a channel region than said gate electrode.
- 10. A method according to claim 6, wherein said first mask is narrower in the direction of the length of a channel region than said gate electrode.
- 11. A method according to claim 6, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
- 12. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a first mask over said gate insulating film; forming first impurity regions in said semiconductor film by introducing a first impurity element by using said first mask; removing said first mask; forming a gate electrode over said gate insulating film so that said gate electrode partially overlaps said first impurity regions; forming a second mask over said gate electrode, said second mask being wider in the direction of the length of a channel region than said gate electrode; forming second impurity regions in said semiconductor film by introducing a second impurity element by using said second mask; and annealing said semiconductor film so that said first and second impurity elements therein are activated, wherein said gate electrode comprises a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer, wherein said second conductive layer comprises aluminum.
- 13. A method according to claim 12, wherein said first conductive layer comprises tantalum.
- 14. A method according to claim 12, wherein said third conductive layer comprises tantalum.
- 15. A method according to claim 12, wherein said mask is narrower than in the direction of the length of a channel region than said gate electrode.
- 16. A method according to claim 12, wherein said first mask is narrower in the direction of the length of a channel region than said gate electrode.
- 17. A method according to claim 12, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
- 18. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a mask over said gate insulating film; forming impurity regions in said semiconductor film by introducing an impurity element by using said mask; removing said mask; forming a gate electrode over said gate insulating film so that said gate electrode partially overlaps said impurity regions, said gate electrode having a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer; forming an anodic oxide layer of said gate electrode on side surfaces of said first and second conductive layers and on top and side surfaces of said third conductive layer; and annealing said semiconductor film so that said impurity element therein is activated.
- 19. A method according to claim 18, wherein said first conductive layer comprises tantalum.
- 20. A method according to claim 18, wherein said third conductive layer comprises tantalum.
- 21. A method according to claim 18, wherein said second conductive Layer comprises aluminum.
- 22. A method according to claim 18, wherein said mask is narrower than in the direction of the length of a channel region than said gate electrode.
- 23. A method according to claim 18, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
- 24. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a first mask over said gate insulating film; forming first impurity regions in said semiconductor film by introducing a first impurity element by using said first mask; removing said first mask; forming a gate electrode over said gate insulating film so that said gate electrode partially overlaps said impurity regions, said gate electrode having a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer; forming a second mask over said gate electrode; forming second impurity regions in said semiconductor film by introducing a second impurity element by using said second mask; and annealing said semiconductor film so that said first and second impurity elements therein are activated, wherein an anodic oxide layer of said gate electrode is formed on side surfaces of said first and second conductive layers and on top and side surfaces of said third conductive layer.
- 25. A method according to claim 24, wherein said first conductive layer comprises tantalum.
- 26. A method according to claim 24, wherein said third conductive layer comprises tantalum.
- 27. A method according to claim 24, wherein said second conductive layer comprises aluminum.
- 28. A method according to claim 24, wherein said first mask is narrower in the direction of the length of a channel region than said gate electrode.
- 29. A method according to claim 24, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
- 30. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor film over a substrate; forming a gate insulating film over said semiconductor film; forming a first mask on said gate insulating film; forming first impurity regions in said semiconductor film by introducing a first impurity element by using said first mask; removing said first mask; forming a gate electrode on said gate insulating film so that said gate electrode partially overlaps said impurity regions, said gate electrode having a multilayer film including in consequence a first conductive layer, a second conductive layer and a third conductive layer; forming a second mask over said gate electrode, said second mask being wider in the direction of the length of a channel region than said gate electrode; forming second impurity regions in said semiconductor film by introducing a second impurity element by using said second mask; and annealing said semiconductor film so that said first and second impurity elements therein are activated, wherein an anodic oxide layer of said gate electrode is formed on side surfaces of said first and second conductive layers and on top and side surfaces of said third conductive layer.
- 31. A method according to claim 30, wherein said first conductive layer comprises tantalum.
- 32. A method according to claim 31, wherein said third conductive layer comprises tantalum.
- 33. A method according to claim 30, wherein said second conductive layer comprises aluminum.
- 34. A method according to claim 30, wherein said first mask is narrower in the direction of the length of a channel region than said gate electrode.
- 35. A method according to claim 30, wherein said semiconductor device is an electronic device selected from the group consisting of a video camera, a digital camera, a projector, a goggle display, a car navigation system, a personal computer, and a personal digital assistant.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-361563 |
Dec 1998 |
JP |
|
Parent Case Info
This application is a divisional of U.S. application Ser. No. 09/464,189, filed on Dec. 16, 1999 now U.S. Pat. No. 6,259,138.
US Referenced Citations (11)
Foreign Referenced Citations (4)
Number |
Date |
Country |
7-130652 |
May 1995 |
JP |
8-078329 |
Mar 1996 |
JP |
10-135468 |
May 1998 |
JP |
10-135469 |
May 1998 |
JP |
Non-Patent Literature Citations (5)
Entry |
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance,” IEDM 97, pp. 523-526, IEEE 1997. |
English abstract re Japanese patent application No. JP 7-130652 published May 19, 1995. |
English abstract re Japanese patent application No. JP 8-078329 published Mar. 22, 1996. |
English abstract re Japanese patent application No. JP 10-135468 published May 22, 1998. |
English abstract re Japanese patent application No. JP 10-135469 published May 22, 1998. |