Claims
- 1. A method of manufacturing a semiconductor device comprising steps of:forming a lower electrode on a first hydrogen barrier film; forming a capacitor insulating film on said lower electrode; forming an upper electrode on said capacitor insulating film; forming a second hydrogen barrier film on said upper electrode; patterning together said first hydrogen barrier film, said lower electrode, said capacitor insulating film, said upper electrode, and said second hydrogen barrier film to form a patterned surface including a capacitor portion; forming a third hydrogen barrier film on said patterned surface, whereby said third hydrogen barrier film is nonconductive; removing said third hydrogen barrier film from said patterned surface except not from said capacitor portion; and removing a portion of said third hydrogen barrier film on said upper electrode to form a contact portion.
- 2. A method of manufacturing a semiconductor device comprising steps of:forming a lower electrode on a first hydrogen barrier film; forming a capacitor insulating film on said lower electrode; forming an upper electrode on said capacitor insulating film; patterning together said first hydrogen barrier film, said lower electrode, said capacitor insulating film and said upper electrode to form a patterned surface including a capacitor portion; forming a third hydrogen barrier film on said patterned surface and removing said third hydrogen barrier film except not from said capacitor portion; removing a portion of said third hydrogen barrier film on said upper electrode to form a contact portion; and forming a second hydrogen barrier film to cover said contact portion, said second hydrogen barrier film being conductive.
- 3. A method of manufacturing a semiconductor device comprising steps of:forming a first, nonconductive hydrogen barrier film on an interlayer insulating film; forming a plug; forming a second, conductive hydrogen barrier film on said plug; forming a lower electrode on said second, conductive hydrogen barrier film; patterning said lower electrode and said second, conductive hydrogen barrier film to form a patterned surface including a capacitor portion; forming a capacitor insulating film on said patterned surface; removing said capacitor insulating film from said patterned surface except not from said capacitor portion; forming a third, conductive hydrogen barrier film on said patterned surface including on said capacitor portion; removing said third, conductive hydrogen barrier film and said first, nonconductive hydrogen barrier film from said interlayer insulating film except not from said capacitor portion.
- 4. A method of manufacturing a semiconductor device comprising steps of:forming a first, nonconductive hydrogen barrier film on an interlayer insulating film; forming a plug in said first, nonconductive hydrogen barrier film and in said interlayer insulating film; forming a second, conductive hydrogen barrier film on said plug and on said first, nonconductive hydrogen barrier film; forming a lower electrode on said second, conductive hydrogen barrier film; patterning said lower electrode and said second, conductive hydrogen barrier film to form a patterned surface including a capacitor portion; forming a capacitor insulating film on said patterned surface including on said capacitor portion; forming a third, conductive hydrogen barrier film on said patterned surface including on said capacitor portion; removing said third, conductive hydrogen barrier film, said capacitor insulating film and said first, nonconductive hydrogen barrier film from said interlayer insulating film except not from said capacitor portion.
- 5. A method of manufacturing a semiconductor device comprising steps of:forming a plug in an interlayer insulating film; forming a first, conductive hydrogen barrier film on said plug and on said interlayer insulating film; forming a lower electrode on said first, conductive hydrogen barrier film; patterning said lower electrode to form a patterned surface including a capacitor portion; forming a capacitor insulating film on said patterned surface including on said capacitor portion; forming a second, conductive hydrogen barrier film on said patterned surface including on said capacitor portion; removing said second, conductive hydrogen barrier film, said capacitor insulating film and said first, conductive hydrogen barrier film from said interlayer insulating film, except not from said capacitor portion.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-299789 |
Oct 1997 |
JP |
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RELATED APPLICATIONS
This application is a divisional application of application Ser. No. 09/178,620 filed Oct. 26, 1998 now U.S. Pat. No. 6,188,098.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5481490 |
Watanabe et al. |
Jan 1996 |
A |
5523595 |
Takenaka et al. |
Jun 1996 |
A |
5716875 |
Jones, Jr. et al. |
Feb 1998 |
A |
5793076 |
Fazan et al. |
Aug 1998 |
A |
6249014 |
Bailey |
Jun 2001 |
B1 |
Foreign Referenced Citations (9)
Number |
Date |
Country |
0 766 319 |
Apr 1997 |
EP |
0290061 |
Feb 1999 |
EP |
7-111318 |
Apr 1995 |
JP |
7-273297 |
Oct 1995 |
JP |
9-97883 |
Apr 1997 |
JP |
9-246497 |
Sep 1997 |
JP |
11-8355 |
Jan 1999 |
JP |
2001036026 |
Feb 2001 |
JP |
2001068639 |
Mar 2001 |
JP |
Non-Patent Literature Citations (1)
Entry |
Achard et al., “Integration Of Ferroelectric Thin Films For Memory Applications”, Science and Technology of Electroceramic Thin Films, Kluwer Academic Publishers, The Netherlands, pp. 353-372 (1995). |