Semura et al., "AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide", Jap. Journal of Appl. Phys., vol. 24, No. 7, Jul. 1985, pp. L548-L550. |
"Disorder of an Al.sub.x Ga.sub.1-x As-GaAs Superlattice by Donor Diffusion," Appl. Phys. Lett. 45(5), pp. 549-551, 1-1984. |
"Photoluminescence and Stimulated Emission in Si- and Ge-Disordered Al.sub.x Ga.sub.1-x As-GaAs Superlattices," Kaliski et al., J. Appl. Phys. 58(1), 1 Jul. 1985, pp. 101-106. |
"Opto-Electronic Device Structures Fabricated by Impurity Induced Disordering," Thornton et al., Journal of Crystal Growth 77 (1-1986), pp. 621-628. |
"GaAlAs Buried Multiquantum Well Lasers Fabricated by Diffusion-Induced Disordering," Appl. Phys. Lett. 45(1), pp. 1-3, 1-1984. |
"Intermixing of an AlAs-GaAs Superlattice by Zn Diffusion," J. Appl. Phys. 53(10), pp. 7082-7084, 1-1982. |
"Embedded-Mirror Semiconductor Laser," Laidig et al., Appl. Phys. Lett. 45(5), 1 Sep. 1984, pp. 485-487. |
"Disorder of an AlAs-GaAs Superlattice by Impurity Diffusion," Laidig et al., Appl. Phys. Lett. 38(10), 15 May 1981, pp. 776-778. |
"Disordering of Ga.sub.1-x Al.sub.x As-GaAs Quantum Well Structures by Donor Sulfur Diffusion," Rao et al., Appl. Phys. Lett. 46(9), 1 May 1985, pp. 867-869. |
"Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing," Kawabe et al., Japanese Journal of Applied Physics, vol. 23, No. 8, Aug. 1984, pp. L623-L624. |
"Low Threshold Planar Buried Heterostructure Lasers Fabricated by Impurity-Induced Disordering," Thornton et al., Appl. Phys. Lett. 47(12), 15 Dec. 1985, pp. 1239-1241. |
"Low-Threshold Disorder-Defined Buried-Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers," Deppe et al., J. Appl. Phys. 58(12), 15 Dec. 1985, pp. 4515-4520. |