Claims
- 1. A semiconductor device comprising:
- an insulating substrate;
- a thin film transistor formed on the insulating substrate, the thin film transistor having a channel region of a crystallized SiGe layer converted from an amorphous SiGe layer; and
- a drain region formed of a crystallized Si or a crystallized SiC.
- 2. The semiconductor device according to claim 1 wherein said crystallized SiGe layer is an intrinsic crystallized SiGe layer.
- 3. The semiconductor device according to claim 1 wherein said drain region is formed of a crystallized Si or a crystallized SiC having an impurity of a first conductivity type.
- 4. The semiconductor device according to claim 1 wherein said crystallized SiGe layer comprises a polycrystalline SiGe layer.
- 5. The semiconductor device according to claim 1 including an insulating layer deposited on said insulating substrate.
- 6. The semiconductor device according to claim 1 including a drain electrode.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-074577 |
Mar 1992 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/036,285, filed Mar. 24, 1993 now abandoned Dec. 27, 1994.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
36285 |
Mar 1993 |
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