Claims
- 1. A semiconductor device comprising:
- an insulating substrate; and
- a thin film transistor formed on the insulating substrate, the thin film transistor having a channel region of a crystallized SiGe layer converted from an amorphous SiGe layer, a channel region having a carrier mobility of 1700 cm.sup.3 /volt at a temperature of about 300 N
- The channel region being disposed on the substrate and between a crystallized drain region and a crystallized source region,
- a single insulating layer being disposed on said source, channel and drain regions,
- a gate electrode disposed on top of said single insulating layer and in substantial matching registry with said drain region, the drain region being formed of a crystallized Si, a crystallized SiC or a crystallized SiGe.
- 2. The semiconductor device according to claim 1 wherein the source region and the drain region make of a crystallized Si layer.
- 3. The semiconductor device according to claim 1 wherein the carrier mobility of the channel region is at least 1,400 cm.sup.2 /volt.
- 4. The semiconductor device according to claim 1 in which said crystallized SiGe layer is an intrinsic crystallized layer.
- 5. The semiconductor device according to claim 1 in which said drain region is formed of a crystallized Si, a crystallized SiC or crystallized SiGe having an impurity of a first conductivity type.
- 6. A semiconductor device as claimed in claim 1 wherein said crystallized SiGe layer comprises a polycrystalline SiGe layer.
- 7. The semiconductor device according to claim 1 including a drain electrode.
- 8. The semiconductor device according to claim 1 wherein the channel region has a carrier mobility of approximately 1700 cm.sup.3 /volt.
- 9. The semiconductor device according to claim 1 further comprising a source region and a drain region, the source region and the drain region made of a crystallized Si layer.
- 10. A semiconductor device comprising:
- an insulating substrate; and
- a thin film transistor formed on the insulation substrate, the thin film transistor having a channel region of a crystallized SiGe layer converted from an amorphous SiGe layer, the channel region having a carrier mobility of 1700 cm.sup.3 /volt at a temperature of about 300K,
- the channel region being disposed on the substrate and between a crystallized drain region and a crystallized source region,
- a single insulating layer being disposed on said source, channel and drain regions,
- a gate electrode disposed on top of said single insulating layer and in substantial matching registry with said drain region,
- wherein the channel region has a carrier mobility of approximately 1700 cm.sup.3 /volt.
- 11. A semiconductor device according to claim 10 wherein the source region and the drain region made of a crystallized Si layer.
- 12. The semiconductor device according to claim 10 in which said crystallized SiGe layer is an intrinsic crystallized layer.
- 13. The semiconductor device according to claim 10 in which said drain region is formed of a crystallized Si, a crystallized SiC or crystallized SiGe having an impurity of a first conductivity type.
- 14. A semiconductor device as claimed in claim 10 wherein said crystallized SiGe layer comprises a polycrystalline SiGe layer.
- 15. The semiconductor device according to claim 10 including a drain electrode.
- 16. The semiconductor device according to claim 10 further comprising a source region and a drain region, the source region and the drain region made of a crystallized Si layer.
- 17. The semiconductor device according to claim 10 in which at least a drain region is formed of a crystallized Si, a crystallized SiC or a crystallized SiGe.
- 18. The semiconductor device according to claim 17 wherein the thin film transistor has an on-current and an off-current, a ratio between the on-current and the off-current being about 10.sup.6 to 10.sup.7.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-074577 |
Mar 1992 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/331,273, filed Oct. 28, 1994, which is a continuation under 37 CFR 1.62 of Ser. No. 08/036,285, filed Mar. 24, 1993, now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4-320063 |
Nov 1992 |
JPX |
Continuations (2)
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Number |
Date |
Country |
Parent |
331273 |
Oct 1994 |
|
Parent |
36285 |
Mar 1993 |
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