Claims
- 1. A semiconductor device having a capacitor, comprising:
- a first electrode layer formed on a semiconductor substrate,
- a dielectric layer formed on said first electrode layer, and
- a second electrode layer formed on said dielectric layer, said dielectric layer including:
- a silicon oxynitride film having a thickness in the range of 17 .ANG. to 25 .ANG. formed on said first electrode layer,
- a silicon nitride film having a thickness in the range of 20 .ANG. to 50 .ANG. formed on said oxynitride film, and
- a silicon oxide film formed on said nitride film and having a thickness in the range of 5 .ANG. to less than 20 .ANG..
- 2. The semiconductor device according to claim 1, wherein said capacitor is capacitor in memory cell of DRAM.
- 3. A semiconductor device having a capacitor, comprising:
- a first electrode layer formed on a semiconductor substrate,
- a dielectric layer having an overall thickness in the range of 42 .ANG. to less than 95 .ANG. formed on said first electrode layer, and
- a second electrode layer formed on said dielectric layer,
- said dielectric layer including:
- a silicon oxynitride film formed on said first electrode layer,
- a silicon nitride film having a thickness in the range of 20 .ANG. to 50 .ANG. formed on said oxynitride film, and
- a silicon oxide film formed on said nitride film and having a thickness less than 20 .ANG..
- 4. The semiconductor device according to claim 3, wherein said capacitor is capacitor in memory cell of DRAM.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-268810 |
Oct 1990 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/767,327 filed Sep. 30, 1991.
US Referenced Citations (3)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0376685 |
Jul 1990 |
EPX |
63-316456 |
Dec 1988 |
JPX |
2-16763 |
Jan 1990 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Ajika et al., "Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon", 1991 Symposium on VLSI Technology Digest of Technical Papers, pp. 63-64. |
Continuations (1)
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Number |
Date |
Country |
Parent |
767327 |
Sep 1991 |
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