Number | Date | Country | Kind |
---|---|---|---|
63-255213 | Oct 1988 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
4825274 | Higuchi et al. | Apr 1989 | |
4868135 | Ogura et al. | Sep 1989 | |
4907059 | Kobayashi et al. | Mar 1990 |
Number | Date | Country |
---|---|---|
52-26181 | Feb 1977 | JPX |
59-161059 | Sep 1984 | JPX |
Entry |
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Ogura et al, "Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor", IEEE Journal of Solid-State Circuits, vol. SC-14, No. 4, Aug. 1980, pp. 424-432. |
Parrillo et al., "Disposable Polysilicon LDD Spacer Technology", IEEE Transactions on Electron Devices, vol. 38, No. 1, Jan. 1991, pp. 39-46. |
Japanese Patent Disclosure (Kokai) 52-26181, filed Aug. 22, 1975. |
Japanese Patent Disclosure (Koki) 59-161059, filed Mar. 3, 1983. |