Patent Grant
9208723
1. Field of the Invention
The present invention relates to a semiconductor device. In particular, the invention relates to a semiconductor device constructed by using transistors. In addition, the invention relates to a display device having the semiconductor device and an electronic apparatus having the display device.
Note that the semiconductor device herein means all devices that can function by utilizing the semiconductor characteristics.
2. Description of the Related Art
In recent years, self-luminous display devices having pixels each formed with a light-emitting element such as a light-emitting diode (LED) are drawing attention. As a light-emitting element used in such self-luminous display devices, there is an organic light-emitting diode (also referred to as an OLED (Organic Light-Emitting Diode), an organic EL element, an electroluminescence (EL) element, or the like), which is drawing attention to be used for EL displays. Since a light-emitting element such as an OLED is a self-luminous type, various advantages can be provided such that high visibility of pixels is ensured as compared to a liquid crystal display, no back light is required, high response speed is achieved and the like.
A self-luminous display device is constructed of a display and a peripheral circuit for inputting signals to the display. By disposing a light-emitting element in each pixel of the display and controlling emission/non-emission of each light-emitting element, images are displayed.
In each pixel of the display, a thin film transistor (hereinafter referred to as a TFT) is disposed. Here, description is made on a pixel configuration where two TFTs are disposed in each pixel in order to control emission/non-emission of a light-emitting element in each pixel (see Patent Document 1).
Description is made briefly on a driving method of the pixel portion 2100. When a scan line is selected in a selection period, the selection transistor 2101 is turned on and a potential of a data line at the time is written into a gate electrode (also referred to as a gate terminal) of the driving transistor 2102 through the selection transistor 2101. In the period after the selection period has terminated and until the next selection period starts, a potential of the gate electrode of the driving transistor 2102 is held in the holding capacitor 2103.
In the configuration of
In the pixel having the configuration of
The analog gray scale method is a method for expressing gray scales by changing the luminance of a light-emitting element, using an analog signal for a signal inputted to each pixel. On the other hand, the digital gray scale method is a method for expressing gray scales by controlling emission/non-emission of a light-emitting element only by controlling on/off of a switching element, using a signal inputted to each pixel.
In comparison with the analog gray scale method, the digital gray scale method is advantages in that it is hardly affected by characteristic variations of TFTs, and thus gray scales can be expressed more accurately.
As an example of the digital gray scale method, there is a time gray scale method. In the time gray scale method, gray scales are expressed by controlling the emission period of each pixel of a display device. Further, by using an erasing transistor (also referred to as an erasing TFT) in addition to the driving transistor and the selection transistor in each pixel in combination with the digital time gray scale method as disclosed in Patent Document 1, multi-gray scale display with high resolution can be achieved. In this specification, such a driving method is called an SES (Simultaneous Erasing Scan) drive.
In addition, in recent years, a display device having such a pixel configuration has been known that: a memory is incorporated in each pixel of a display portion in order to reduce power consumption of the display device (see Patent Document 2 and Patent Document 3).
[Patent Document 1] Japanese Patent Laid-Open No. 2001-343933
[Patent Document 2] Japanese Patent Laid-Open No. 2002-140034
[Patent Document 3] Japanese Patent Laid-Open No. 2005-049402
In the aforementioned pixel configuration disclosed in Patent Document 1, the power consumption of a data line driver circuit largely depends on the charging/discharging of a buffer therein. The power consumption P is generally calculated by using the following Formula (1), where F is frequency, C is capacitance, and V is voltage.
P=FCV2 (F: Frequency, C: Capacitance, and V: Voltage (1)
From the Formula (1), it can be seen that the voltage of a data line is desirably set to have a small amplitude by the data line driver circuit. Therefore, the voltage of a data line is set to have the minimum amplitude that allows on/off operation of the driving transistor. In other words, it is desirable to set the absolute value of a gate-source voltage (hereinafter referred to as Vgs) of the driving transistor to be large enough to certainly control the on/off operation of the driving transistor.
A potential of a data line to be inputted into a pixel is held in a holding capacitor after a selection period for turning on the selection transistor has terminated and until the next selection period for turning on the selection transistor starts.
However, there is such a problem that a potential that has been accumulated in the holding capacitor to be applied to the gate electrode of the driving transistor may fluctuate due to the effect of noise, a leakage potential from the selection transistor and the like, and thus the driving transistor may malfunction without being capable of keeping the normal on/off state.
In addition, there is another problem that the power consumption is undesirably increased if the voltage amplitude of the data line is increased in order to prevent malfunctions of the driving transistor that would be caused by fluctuations of a gate potential of the driving transistor. It can be seen from Formula (1) that the power consumption of a data line driver circuit increases in proportion to the square of a voltage; therefore, an increase in the voltage amplitude of a data line has a big influence on the power consumption.
Description is made in more detail with reference to
Description is made on a specific potential value of each power source line in
Needless to say, a potential of each wire, polarity of each transistor and the like are only examples, and therefore, the invention is not limited to them.
In the pixel configuration shown herein, a potential of the data line 2206 is directly written into the node G. Since the potential of the node G that is supplied from the data line 2206 controls on/off of the driving transistor 2202, the H potential of the data line 2206 is required to be equal to or higher than the potential of the power source line 2207, while the L potential of the data line 2206 is requited to be high enough to turn on the driving transistor 2202. In other words, it is required that the relationship between the voltage (Vel) applied to the light-emitting element 2204 and the source-drain voltage (Vds) of the driving transistor 2202 satisfy a condition to become Vel>Vds, which is required for operating the driving transistor 2202 in the linear region.
However, there is such a possibility that the potential of the node G may fluctuate due to variations or fluctuations of the threshold voltage of the driving transistor 2202, noise from outside during a holding period, a leakage potential from the selection transistor 2201 as shown in
Thus, a semiconductor device having a conventional pixel configuration has a problem in that a potential applied to the gate electrode of the driving transistor fluctuates due to noise or a leakage potential from the selection transistor, which causes the driving transistor to malfunction. Further, even if a signal having a large potential amplitude is supplied from a data line, which is large enough to ensure the stable operation of the driving transistor, there arises another problem that the power consumption of a data line driver circuit is increased.
The invention is made in view of the foregoing problems, and the invention provides a semiconductor device, a display device having the semiconductor device and an electronic apparatus having the display device in order to overcome the foregoing problems.
One aspect of a semiconductor device of the invention includes a data line, a power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, a third transistor, and a light-emitting element. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a first terminal of the third transistor is connected to the light-emitting element; and the memory circuit holds a first potential inputted from the power source line or a second potential inputted from the second scan line, and applies the first potential or the second potential to a gate of the third transistor to control emission/non-emission of the light-emitting element.
One aspect of a semiconductor device of the invention includes a data line, a power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, and a third transistor. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; and the memory circuit holds a first potential inputted from the power source line or a second potential inputted from the second scan line, and applies the first potential or the second potential to a gate of the third transistor to control on/off of the third transistor.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, a third transistor, and a light-emitting element. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a gate of the third transistor is connected to the memory circuit, a first terminal thereof is connected to the second power source line, and a second terminal thereof is connected to the light-emitting element; and the memory circuit holds a first potential inputted from the first power source line or a second potential inputted from the second scan line, and applies the first potential or the second potential to the gate of the third transistor to control emission/non-emission of the light-emitting element.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, and a third transistor. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a gate of the third transistor is connected to the memory circuit, and a first terminal thereof is connected to the second power source line; and the memory circuit holds a first potential inputted from the first power source line or a second potential inputted from the second scan line, and applies the first potential or the second potential to the gate of the third transistor to control on/off of the third transistor.
One aspect of a semiconductor device of the invention includes a data line, a power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, a third transistor, and a light-emitting element. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a first terminal of the third transistor is connected to the light-emitting element; and the memory circuit holds a first potential inputted from the power source line through the first transistor and the second transistor, or a second potential inputted from the second scan line, and applies the first potential or the second potential to a gate of the third transistor to control emission/non-emission of the light-emitting element.
One aspect of a semiconductor device of the invention includes a data line, a power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, and a third transistor. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; and the memory circuit holds a first potential inputted from the power source line through the first transistor and the second transistor, or a second potential inputted from the second scan line, and applies the first potential or the second potential to a gate of the third transistor to control on/off of the third transistor.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, a third transistor, and a light-emitting element. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a gate of the third transistor is connected to the memory circuit, a first terminal thereof is connected to the second power source line, and a second terminal thereof is connected to the light-emitting element; and the memory circuit holds a first potential inputted from the first power source line through the first transistor and the second transistor, or a second potential inputted from the second scan line, and applies the first potential or the second potential to the gate of the third transistor to control emission/non-emission of the light-emitting element.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first transistor, a second transistor, a memory circuit, and a third transistor. A gate of the first transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; the memory circuit is connected to a second terminal of the second transistor and the second scan line; a gate of the third transistor is connected to the memory circuit, and a first terminal thereof is connected to the second power source line; and the memory circuit holds a first potential inputted from the first power source line through the first transistor and the second transistor, or a second potential inputted from the second scan line, and applies the first potential or the second potential to the gate of the third transistor to control on/off of the third transistor.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first n-channel transistor, a second n-channel transistor, an inverter circuit, a third n-channel transistor, a first p-channel transistor, a second p-channel transistor, a third p-channel transistor, and a light-emitting element. A gate of the first n-channel transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second n-channel transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor; an input terminal of the inverter circuit is connected to a second terminal of the second n-channel transistor; a gate of the third n-channel transistor is connected to an output terminal of the inverter circuit, and a first terminal thereof is connected to the second scan line; a gate of the first p-channel transistor is connected to the first scan line, and a first terminal thereof is connected to the second power source line; a gate of the second p-channel transistor is connected to the output terminal of the inverter circuit, and a first terminal thereof is connected to a second terminal of the first p-channel transistor; a gate of the third p-channel transistor is connected to a second terminal of the second n-channel transistor, the input terminal of the inverter circuit, a second terminal of the third n-channel transistor, and a second terminal of the second p-channel transistor, a first terminal thereof is connected to the second power source line; and a second terminal thereof is connected to the light-emitting element.
One aspect of a semiconductor device of the invention includes a data line, a first power source line, a second power source line, a first scan line, a second scan line, a first n-channel transistor, a second n-channel transistor, an inverter circuit, a third n-channel transistor, a first p-channel transistor, a second p-channel transistor, and a third p-channel transistor. A gate of the first n-channel transistor is connected to the data line, and a first terminal thereof is connected to the first power source line; a gate of the second n-channel transistor is connected to the first scan line, and a first terminal thereof is connected to a second terminal of the first transistor, an input terminal of the inverter circuit is connected to a second terminal of the second n-channel transistor; a gate of the third n-channel transistor is connected to an output terminal of the inverter circuit, and a first terminal thereof is connected to the second scan line; a gate of the first p-channel transistor is connected to the first scan line, and a first terminal thereof is connected to the second power source line; a gate of the second p-channel transistor is connected to the output terminal of the inverter circuit, and a first terminal thereof is connected to a second terminal of the first p-channel transistor; and a gate of the third p-channel transistor is connected to a second terminal of the second n-channel transistor, the input terminal of the inverter circuit, a second terminal of the third n-channel transistor, and a second terminal of the second p-channel transistor, and a first terminal thereof is connected to the second power source line.
A potential of the first power source line of the invention may be lower than a potential of the second power source line.
A potential of the second power source line of the invention may be higher than a potential inputted to the data line.
In the invention, a capacitor may be additionally provided, one electrode of which is connected to the gate of the third p-channel transistor and the other electrode of which is connected to the second power source line.
The light-emitting element of the invention may be a display medium, a contrast of which changes by an electromagnetic function such as an EL element (e.g., an organic EL element, an inorganic EL element, or an EL element containing an organic material and an inorganic material) or a plasma display (PDP). Note that as a display device using such an EL element, there is an EL display.
In addition, the invention provides an electronic apparatus such as a television receiver, a camera (e.g., video camera or a digital camera), a goggle display, a navigation system, an audio reproducing device, a computer, a game machine, a mobile computer, a portable phone, a portable game machine, an electronic book, or an image reproducing device.
In the semiconductor device having a light-emitting element in accordance with the invention, a constant potential is continuously supplied to a gate electrode of a driving transistor regardless of whether the light-emitting element is in the emission state or non-emission state. Therefore, stable operation can be performed unlike the conventional pixel configuration where a potential is held in a holding capacitor.
Further, in the semiconductor device of the invention, on/off potentials applied to a gate electrode of a driving transistor can be set separately from a potential of a data line. Accordingly, the potential amplitude of the data line can be set small, and thus a semiconductor device with a significantly suppressed power consumption can be provided.
Further, in the semiconductor device of the invention, even when a signal supply is stopped to a memory circuit in each pixel of the pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held; therefore, a light-emitting element can hold the emission state or non-emission state even under the aforementioned circumstance.
In addition, by applying the invention to a display device, a potential for selecting a light-emitting element to be in the emission state or non-emission state is continuously and stably supplied to a gate electrode of a driving transistor. Therefore, stable display operation can be performed unlike the conventional pixel configuration where a potential is held in a holding capacitor.
Further, in the display device of the invention, on/off potentials applied to a gate electrode of a driving transistor can be set separately from a potential of a data line. Accordingly, the potential amplitude of the data line can be set small, and thus a display device with a significantly suppressed power consumption can be provided.
Further, in the display device of the invention, even when a signal supply is stopped to a memory circuit in each pixel of the pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held; therefore, a light-emitting element can hold the emission state or non-emission state even under the aforementioned circumstance.
Further, in an electronic apparatus using the semiconductor device of the invention, a constant potential is continuously supplied to a gate electrode of a driving transistor regardless of whether a light-emitting element is in the emission state or non-emission state. Therefore, stable display operation can be performed unlike the conventional pixel configuration where a potential is held in a holding capacitor. Thus, products with stable display operation can be manufactured to provide less defective goods to customers.
Further, in the electronic apparatus of the invention, on/off potentials applied to a gate electrode of a driving transistor can be set separately from a potential of a data line. Accordingly, the potential amplitude of the data line can be set small, and thus an electronic apparatus with a significantly suppressed power consumption can be provided.
Further, in the electronic apparatus having the display device of the invention, even when a signal supply is stopped to a memory circuit in each pixel of a pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held; therefore, a light-emitting element can hold the emission state or non-emission state to display images even under the aforementioned circumstance.
In the accompanying drawings:
Although the invention will be fully described by way of an embodiment mode and embodiments with reference to the accompanying drawings, it is to be understood that various changes and modifications will be apparent to those skilled in the art. Therefore, unless otherwise such changes and modifications depart from the scope of the invention, they should be construed as being included therein. Note that common portions or portions having a common function are denoted by the identical reference numerals in all the drawings, and therefore, description thereon will be made only once.
First, description is made on a pixel configuration of a semiconductor device of the invention, and the operation principle thereof.
The pixel has a data transistor 101 (also referred to as a first transistor), a switch transistor 102 (also referred to as a second transistor), a memory circuit 103, a driving transistor 104 (also referred to as a third transistor), a data line 105, a first power source line 106, a second power source line 107, a first scan line 108, a second scan line 109, a light-emitting element 110, and a counter electrode 111.
Note that in the invention, a pixel means one picture element, the luminance of which can be controlled. For example, one pixel shows one color element for expressing luminance. Thus, in the case of a color display device composed of color elements of R (Red), G (Green) and B (Blue), the minimum unit of an image is composed of three pixels of an R pixel, a G pixel and a B pixel. Note that the color element is not limited to the three colors, and more colors may be used. For example, RGBW (W means white) may be employed.
A first terminal (one of source and drain terminals) of the data transistor 101 is connected to the first power source line 106, a gate terminal thereof is connected to the data line 105, and a second terminal (the other of the source and drain terminals) thereof is connected to a first terminal (one of source and drain terminals) of the switch transistor 102. In addition, the first terminal (one of the source and drain terminals) of the switch transistor 102 is connected to the second terminal of the data transistor 101, a gate terminal thereof is connected to the first scan line 108, and a second terminal (the other of the source and drain terminals) thereof is connected to input and output terminals of the memory circuit 103 and a gate terminal of the driving transistor 104. In addition, the memory circuit 103 is connected to the gate terminal of the driving transistor 104, the second terminal of the switch transistor 102 and the second scan line 109. A first terminal (one of source and drain terminals) of the driving transistor 104 is connected to the second power source line 107, the gate terminal thereof is connected to the input and output terminals of the memory circuit 103 and the second terminal of the switch transistor 102, and a second terminal (the other of the source and drain terminals) thereof is connected to one electrode of the light-emitting element 110. In addition, the other electrode of the light-emitting element 110 is connected to the counter electrode 111.
Note that in the invention, connection means/includes electrical connection. Therefore, in the disclosed structure of the invention, other elements (e.g., switch, transistor, capacitor, inductor, resistor, or diode) may be added between a predetermined connection as long as it enables electrical connection.
Note that the first power source line 106 is set at a potential Vc that is lower than the second power source line 107. That is, Vc<Vdd is satisfied, where Vdd is a standard potential set to the second power source line 107 during the emission period of the pixel. That is, |Vth|<|Vgs| is satisfied, where |Vgs| is the absolute value of the gate-source voltage of the driving transistor 104, and |Vth| is the absolute value of the threshold voltage of the driving transistor 104. For example, Vc may be equal to GND (ground potential).
Note that various types of transistors may be used as the transistor in the invention. Therefore, the invention is not limited to a certain type of transistors. A transistor used in the invention may be a thin film transistor (TFT) using a non-single crystalline semiconductor film typified by amorphous silicon or polycrystalline silicon, a MOS transistor formed by using a semiconductor substrate or an SOI substrate, a junction transistor, a bipolar transistor, a transistor using a compound semiconductor such as ZnO or a-InGaZnO, a transistor using an organic semiconductor or a carbon nanotube, or other transistors. In addition, a substrate over which transistors are formed is not limited to a certain type, and various kinds of substrates can be used. Accordingly, transistors can be formed over a single crystalline substrate, an SOI substrate, a glass substrate, a plastic substrate, a paper substrate, a cellophane substrate, a quartz substrate or the like. Alternatively, after forming transistors over a substrate, the transistors may be transposed onto another substrate.
Note that the first terminal of the data transistor 101 may be connected anywhere as long as it is connected to a wire set at the potential Vc that is lower than the second power source line 107 during the period when the data transistor 101 is on. For example, such a configuration may be provided that a second scan line 109 that is provided in the adjacent pixel is set at the potential of Vc in the period when the data transistor 101 is on, so that the potential of Vc may be supplied to the pixel from the second scan line 107.
Note that the counter electrode (cathode) 111 of the light-emitting element 110 is set at a potential Vss lower than the second power source line 107. That is, Vss<Vdd is satisfied, where Vdd is a standard potential set to the second power source line 107 during the emission period of the pixel. For example, Vss may be equal to GND (ground potential). In addition, the first power source line 106 and the counter electrode 111 may be set to have the same potential of GND.
Note that a signal inputted to the driving transistor 104 for turning the light-emitting element 110 into the emission state is called a first signal, while a signal inputted to the driving transistor 104 for turning the light-emitting element 110 into the non-emission state is called a second signal.
Next, description is made with reference to
Note that in the description along with
First,
In the pixel configuration of the invention, signals for controlling on/off of the driving transistor, which have conventionally been inputted from a data line, are not inputted. Therefore, it is required that a reset signal (a signal for turning a light-emitting element into the non-emission state) be inputted into the memory circuit in the pixel in advance. Such a period when a reset signal is inputted into the memory circuit in the pixel in advance is called a reset period in this specification.
Although
In
In this reset period, the first scan line is at an L potential and the switch transistor is off; therefore, even when the potential of the data line changes to turn on/off the data transistor, neither potential of the memory circuit nor the gate terminal of the driving transistor changes.
Note that the potential of the gate terminal of the driving transistor in the reset period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
In
In
In this holding period, the first scan line is at an L potential and the switch transistor is off; therefore, even when the potential of the data line changes to turn on/off the data transistor, neither potential of the memory circuit nor the gate terminal of the driving transistor changes.
In
In
In this holding period, the first scan line is at an L potential and the switch transistor is off; therefore, even when the potential of the data line changes to turn on/off the data transistor, neither potential of the memory circuit nor the gate terminal of the driving transistor changes.
Note that the potential of the gate terminal of the driving transistor in the holding period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
Note that in the aforementioned holding period in which a light-emitting element holds the emission state or non-emission state, even when a signal supply is stopped to the memory circuit in each pixel of the pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held; therefore, the light-emitting element can hold the emission state or non-emission state even under the aforementioned circumstance. Therefore, neither the scan line driver circuit nor the data line driver circuit is required to be operated for displaying still images or the like by using the semiconductor device of the invention, and thus a significant reduction in power consumption can be expected.
In addition, in the pixel configuration shown in
Note that this embodiment mode can be freely implemented in combination with any of the other embodiments in this specification.
Description is made below on embodiments of the invention.
In this embodiment, description is made on a specific pixel configuration of a semiconductor device of the invention, and the operation principle thereof.
First, description is made in detail with reference to
The pixel includes a data transistor 501, a switch transistor 502, an inverter circuit INV having a selection transistor 503 and a selection transistor 504, a holding transistor 505, a holding transistor 506, a holding transistor 507, a driving transistor 508, a data line 509, a first power source line 510, a second power source line 511, a first scan line 512, a second scan line 513, a light-emitting element 514, and a counter electrode 515. In this embodiment, the inverter circuit INV, the holding transistor 505, the holding transistor 506, and the holding transistor 507 are collectively referred to as a memory circuit 516. Note that the data transistor 501 is an n-channel transistor, the switch transistor 502 is an n-channel transistor, the holding transistor 505 and the holding transistor 506 are p-channel transistors, the holding transistor 507 is an n-channel transistor, and the driving transistor 508 is a p-channel transistor. Note that the polarity of these transistors is not specifically limited as long as they can perform the same operation as the respective transistors of the invention even when changing a potential of a wire connected to a terminal of each transistor.
A first terminal (one of source and drain terminals) of the data transistor 501 is connected to the first power source line 510, a gate terminal thereof is connected to the data line 509, and a second terminal (the other of the source and drain terminals) thereof is connected to a first terminal (one of source and drain terminals) of the switch transistor 502. In addition, the first terminal (one of the source and drain terminals) of the switch transistor 502 is connected to the second terminal of the data transistor 501, a gate terminal thereof is connected to the first scan line 512, and a second terminal (the other of the source and drain terminals) thereof is connected to gate terminals of the selection transistors 503 and 504 that correspond to an input terminal of the inverter circuit INV and a gate terminal of the driving transistor 508. The input terminal of the inverter circuit INV is connected to the second terminal (the other of the source and drain terminals) of the switch transistor 502 and the gate terminal of the driving transistor 508, and an output terminal thereof is connected to gate terminals of the holding transistors 506 and 507. A first terminal (one of source and drain terminals) of the selection transistor 503 is connected to the second power source line 511, and a second terminal (the other of the source and drain terminals) thereof is connected to a first terminal (one of source and drain terminals) of the selection transistor 504. The first terminal (one of the source and drain terminals) of the selection transistor 504 is connected to the second terminal of the selection transistor 503, and a second terminal (the other of the source and drain terminals) thereof is connected to the first power source line 510. A first terminal (one of source and drain terminals) of the holding transistor 505 is connected to the second power source line 511, a gate terminal thereof is connected to the first scan line 512, and a second terminal (the other of the source and drain terminals) thereof is connected to a first terminal (one of source and drain terminals) of the holding transistor 506. The first terminal (one of the source and drain terminals) of the holding transistor 506 is connected to the second terminal of the holding transistor 505, a gate terminal of the holding transistor 506 is connected to an output terminal of the inverter circuit INV, and a second terminal (the other of the source and drain terminals) thereof is connected to a first terminal (one of source and drain terminals) of the holding transistor 507. The first terminal (one of the source and drain terminals) of the holding transistor 507 is connected to the second terminal of the holding transistor 506, a gate terminal thereof is connected to the output terminal of the inverter circuit INV, and a second terminal (the other of the source and drain terminals) thereof is connected to the second scan line 513. A first terminal (one of source and drain terminals) of the driving transistor 508 is connected to the second power source line 511, the gate terminal thereof is connected to the input terminal of the inverter circuit INV, the second terminal of the switch transistor 502, the second terminal of the holding transistor 506, and the first terminal of the holding transistor 507, and a second terminal (the other of the source and drain terminals) of the driving transistor 508 is connected to one electrode of the light-emitting element 514. The other electrode of the light-emitting element 514 is connected to the counter electrode 515.
Note that the first power source line 510 is set at a potential Vc that is lower than the second power source line 511. Note that Vc<Vdd is satisfied, where Vdd is a potential set to the second power source line 511 during the emission period of the pixel. That is, |Vth|<|Vgs| is satisfied, where |Vgs| is the absolute value of the gate-source voltage of the driving transistor 508, and |Vth| is the absolute value of the threshold voltage of the driving transistor 508. For example, Vc may be equal to GND (ground potential).
Note that the counter electrode (cathode) 515 of the light-emitting element 514 is set at a potential Vss that is lower than the second power source line 511. Note also that Vss<Vdd is satisfied, where Vdd is a potential set to the second power source line 511 during the emission period of the pixel. For example, Vss may be equal to GND (ground potential). In addition, the first power source line 510 and the counter electrode 515 may be set to have the same potential of GND.
Next, description is made with reference to
In the pixel configuration of the invention, signals for controlling on/off of the driving transistor, which have conventionally been inputted from a data line, are not inputted. Therefore, it is required that a reset signal (a signal for turning a light-emitting element into the non-emission state) be inputted into the memory circuit in the pixel in advance. Such a period when a reset signal is inputted into the memory circuit in the pixel in advance is called a reset period in this specification.
In
In the case where the pixel has been in the non-emission state before the reset period, a reset signal does not have to be inputted into the memory circuit in the pixel from the second scan line during the reset period, but also may be inputted continuously from the previous non-emission period in which the pixel has been in the non-emission state as shown in
Although
In
The non-emission state in
In
Note that the potential of the gate terminal of the driving transistor in the selection period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
In
In the memory circuit, the L potential of the Node A is inputted to the input terminal of the inverter circuit, and the potential is inverted to be an H potential at the Node B. When the H potential is inputted to the Node B, the holding transistor 506 is turned off and the holding transistor 507 is turned on. Thus, the L potential that is supplied from the second scan line to the second terminal of the holding transistor 507 becomes an output potential of the memory circuit, and thus the driving transistor holds the on state.
In this holding period, the first scan line is at an L potential and the switch transistor is off; therefore, even when the potential of the data line changes to turn on/off the data transistor, neither potential of the memory circuit nor the gate terminal of the driving transistor changes.
Note that the potential of the gate terminal of the driving transistor in the selection period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
In
Note that the potential of the gate terminal of the driving transistor in the selection period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
At this time, the holding transistor 503 is turned off in the memory circuit; therefore, an output potential of the memory circuit is not fixed and thus the potential of the gate terminal of the driving transistor becomes a floating state for an instant. Therefore, the selection period is preferably set short. In addition, a capacitor may be connected to the gate terminal of the driving transistor. By providing the capacitor, potential leakage of the driving transistor can be provided.
In
In the memory circuit, the H potential of the Node A is inputted to the input terminal of the inverter circuit, and the potential is inverted to be an L potential at the Node B. When the L potential is inputted to the Node B, the holding transistor 506 is turned on and the holding transistor 507 is turned off. At this time, since the first scan line is at an L potential, the holding transistor 503 is turned on. Thus, the H potential that is supplied from the second power source line to the first terminal of the holding transistor 506 becomes an output potential of the memory circuit, and thus the driving transistor holds the off state.
In this holding period, the first scan line is at an L potential and the switch transistor is off; therefore, even when the potential of the data line changes to turn on/off the data transistor, neither potential of the memory circuit nor the gate terminal of the driving transistor is changed.
Note that the potential of the gate terminal of the driving transistor in the holding period is held in the memory circuit. Accordingly, unlike a pixel configuration using a holding capacitor, there are few problems concerning malfunctions of the driving transistor that would be caused when a potential applied to the gate electrode of the driving transistor fluctuates due to the effect of noise, a leakage potential from the switch transistor and the like.
Note that in the aforementioned holding period in which a light-emitting element holds the emission state or non-emission state, even when a signal supply is stopped to a memory circuit in each pixel of the pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held; therefore, the light-emitting element can hold the emission state or non-emission state even under the aforementioned circumstance. Therefore, neither the scan line driver circuit nor the data line driver circuit is required to be operated for displaying still images or the like by using the semiconductor device of the invention, and thus a significant reduction in power consumption can be expected.
In addition, in the pixel configuration shown in
Note that this embodiment mode can be freely implemented in combination with any of the aforementioned embodiment and other embodiments
In this embodiment, description is made on a gray scale expression method where gray scales are expressed by a time gray scale method in the semiconductor device of the invention described in Embodiment 1.
A semiconductor device of the invention is operated by an SES (Simultaneous Erasing Scan) drive. In order to achieve multi-gray scale display by the time gray scale method, an erasing TFT has been required to be used conventionally. In the invention, such an erasing transistor is not required to be provided additionally since a reset period is provided before each selection period.
In the erasing period of this embodiment, operation in the reset period in Embodiment 1 is performed. That is, such an operation is performed as rewriting the memory circuit that holds a signal for holding the emission state by newly inputting a signal for holding the non-emission state into the memory circuit.
The reset periods and the address (writing) periods each correspond to the period required for inputting video signals to pixels for one image screen; therefore each of the reset periods and the address (writing) periods respectively have an equal length for each bit. To the contrary, each of the sustain (emission) periods has a squared length of the previous period (e.g., 1:2:4: . . . :2(n-1)). In the example of
The erasing period is originally provided in order to prevent that the address (writing) period in the present sub-frame overlaps the address period in the next sub-frame in the case where the sustain (emission) periods are short, in which case different gate signal lines would be selected concurrently.
This embodiment can be freely implemented in combination with any of the aforementioned embodiment mode and other embodiments.
Description is made with reference to the drawings on a top view, a circuit diagram, and a cross-sectional view of a light-emitting device of the invention. More specifically, description is made with reference to
As a substrate 1201 having an insulating surface, a glass substrate, a quartz substrate, a stainless steel substrate or the like can be used. Alternatively, a substrate formed of a flexible synthetic resin such as plastic typified by polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or acrylic may be used.
First, a base film is formed over the substrate 1201. The base film may be an insulating film formed of silicon oxide, silicon nitride, silicon nitride oxide or the like. Then, an amorphous semiconductor film is formed over the base film. The amorphous semiconductor film is formed to have a thickness of 25 to 100 nm. In addition, the amorphous semiconductor film can be formed by using not only silicon but also silicon germanium. Subsequently, the amorphous semiconductor film is crystallized as required, thereby forming a crystalline semiconductor film 1202. The crystallization may be performed by using a heating furnace, laser irradiation, irradiation with light emitted from a lamp, or a combination of them. For example, after adding metal elements into the amorphous semiconductor film, thermal treatment with a heating furnace is applied thereto to form a crystalline semiconductor film. In this manner, it is preferable to add metal elements since crystallization can be performed at a low temperature.
Note that various types of transistors may be used as the transistor in the invention. Therefore, the invention is not limited to a certain type of transistors. A transistor used in the invention may be a thin film transistor (TFT) using a non-single crystalline semiconductor film typified by amorphous silicon or polycrystalline silicon, a MOS transistor formed by using a semiconductor substrate or an SOI substrate, a junction transistor, a bipolar transistor, a transistor using a compound semiconductor such as ZnO or a-InGaZnO, a transistor using an organic semiconductor or a carbon nanotube, or other transistors. In addition, a substrate over which transistors are formed is not limited to a certain type, and various kinds of substrates can be used. Accordingly, transistors can be formed over, for example, a single crystalline substrate, an SOI substrate, a glass substrate, a plastic substrate, a paper substrate, a cellophane substrate, a quartz substrate or the like. Alternatively, after forming transistors over a substrate, the transistors may be transposed onto another substrate.
Note that a thin film transistor (TFT) formed of a crystalline semiconductor has higher electron field-effect mobility than a TFT formed of an amorphous semiconductor, and thus has large on current; therefore, it is more suitable for a semiconductor device.
Then, the crystalline semiconductor film 1202 is patterned into a predetermined shape. Then, an insulating film functioning as a gate insulating film is formed. The insulating film is formed with a thickness of 10 to 150 nm so as to cover the semiconductor film. For example, the insulating film can be formed by using a silicon oxynitride film, a silicon oxide film or the like, and may be formed either to have a single-layer structure or a stacked-layer structure.
Then, a conductive film functioning as a gate electrode is formed over the gate insulating film. Although the gate electrode may be formed either in a single layer or stacked layers, it is formed by stacking conductive films herein. Conductive films 1203A and 1203B are each formed by using an element selected from among Ta, W, Ti, Mo, Al or Cu, or an alloy material or a compound material containing such elements as a main component. In this embodiment, the conductive film 1203A is formed of a tantalum nitride film with a thickness of 10 to 50 nm, and the conductive film 1203B is formed of a tungsten film with a thickness of 200 to 400 nm.
Next, impurity elements are added with the gate electrode as a mask, thereby forming impurity regions. At this time, low concentration impurity regions may be formed in addition to the high concentration impurity regions. The low concentration impurity regions are called LDD (Lightly Doped Drain) regions.
Next, insulating films 1204 and 1205 are formed to function as an interlayer insulating film 1206. The insulating film 1204 is preferably an insulating film containing nitrogen, and here it is formed by using a silicon nitride film with a thickness of 100 nm by plasma CVD. The insulating film 1205 is preferably formed by using an organic material or an inorganic material. As the organic material, there are polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, and siloxane. Siloxane is composed of a skeleton formed by the bond of silicon (Si) and oxygen (O), a substituent of which includes an organic group containing at least hydrogen (e.g., an alkyl group or aromatic hydrocarbon). Alternatively, a fluoro group may be used as the substituent, or both a fluoro group and an organic group containing at least hydrogen may be used as the substituent. As the inorganic material, there is an insulating film containing oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y) or a silicon nitride oxide (SiNxOy) (x>y) (where x and y are natural numbers respectively). Note that although a film formed of an organic material has favorable planarity, moisture and oxygen are undesirably absorbed into the organic material. In order to prevent this, an insulating film containing an inorganic material is preferably formed over the insulating film formed of the organic material.
Next, after forming contact holes in the interlayer insulating film 1206, a conductive film 1207 functioning as source and drain wires of transistors is formed. The conductive film 1207 is formed by using an element selected from among aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W) or a silicon (Si), or an alloy film containing such elements. In this embodiment, a titanium film, a titanium nitride film, a titanium-aluminum alloy film, and a titanium film are stacked as the conductive film 1207.
Then, an insulating film 1208 is formed to cover the conductive film 1207. The insulating film 1208 can be formed by using a material shown as an example for the interlayer insulating film 1206. Then, a pixel electrode (also referred to as a first electrode) 1209 is formed in an opening provided in the insulating film 1208. The opening is preferably formed to have a roundish edge surface with multiple curvature radii in order to increase the step coverage of the pixel electrode 1209.
The pixel electrode 1209 is preferably formed by using a conductive material with a high work function (4.0 eV or higher) such as a metal, an alloy, an electrically conductive compound, or a mixture of them. As a specific example of the conductive material, there is indium oxide containing tungsten oxide (IWO), indium zinc oxide containing tungsten oxide (IWZO), indium oxide containing titanium oxide (ITiO), indium tin oxide containing titanium oxide (ITTiO), or the like. Needless to say, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide doped with silicon oxide (ITSO), or the like can be used as well.
Exemplary composition ratios of the aforementioned conductive materials are described. The composition ratio of indium oxide containing tungsten oxide is: tungsten oxide is 1.0 wt % and indium oxide is 99.0 wt %. The composition ratio of indium zinc oxide containing tungsten oxide is: tungsten oxide is 1.0 wt %, zinc oxide is 0.5 wt %, and indium oxide is 98.5 wt %. The composition ratio of indium oxide containing titanium oxide is: titanium oxide is 1.0 to 5.0 wt % and indium oxide is 99.0 to 95.0 wt %. The composition ratio of indium tin oxide (ITO) is: tin oxide is 10.0 wt % and indium oxide is 90.0 wt %. The composition ratio of indium zinc oxide (IZO) is: zinc oxide is 10.7 wt % and indium oxide is 89.3 wt %. The composition ratio of indium tin oxide containing titanium oxide is: titanium oxide is 5.0 wt %, tin oxide is 10.0 wt %, and indium oxide is 85.0 wt %. The aforementioned composition ratios are only examples, and therefore, the composition ratios may be set appropriately.
Next, an electroluminescent layer 1210 is formed by vapor deposition or ink-jet deposition. The electroluminescent layer 1210 contains an organic material or an inorganic material, and formed by appropriately combining an electron injection layer (EIL), an electron transporting layer (ETL), a light-emitting layer (EML), a hole transporting layer (HTL), a hole injection layer (HIL), and the like. Note that the boundary between each layer is not necessarily clear, and there may be a case where a material forming each layer is partially mixed with each other, making the interface unclear.
Note that the electroluminescent layer is preferably formed by using multiple layers having different functions such as a hole injection/transporting layer, a light-emitting layer, and an electron injection/transporting layer.
Note also that the hole injection/transporting layer is preferably formed by using a composite material of an organic compound material that has a hole transporting property and an inorganic compound material that has an electron-accepting property with respect to the organic compound material. By providing such a structure, many hole carriers are generated in the organic compound that inherently has few carriers, and thus extremely excellent hole injection/transporting properties can be obtained. With such an effect, a driving voltage can be lowered than the conventional one. Further, since the hole injection/transporting layer can be formed thick without increasing the driving voltage, short circuit of a light-emitting element resulting from dusts or the like can be suppressed.
As the organic compound material having a hole transporting property, there is copper phthalocyanine (abbreviation: CuPc); vanadyl phthalocyanine (abbreviation: VOPc); 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA); 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA); 1,3,5-tris[N,N-di(m-tolyl)amino]benzene (abbreviation: m-MTDAB); N,N′-dipheny-N,N-bis(3-methylphenyl)-1,1-biphenyl-4,4-diamine (abbreviation: TPD); 4,4′-bis[N-(1-napthyl)-N-phenylamino]bipheny (abbreviation: NPB); 4,4′-bis[N-[4-{N,N-bis(3-methylphenyl)amino}phenyl]-N-phenylamino]biphenyl (abbreviation: DNTPD); 4,4′,4″-tris(N-carbazolyl)triphenylamine (abbreviation: TCTA); or the like. Note that the invention is not limited to these.
Note that as the inorganic compound material having an electron-accepting property, there is titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, zinc oxide or the like. In particular, vanadium oxide, molybdenum oxide, tungsten oxide, or rhenium oxide is preferably used since such material can be easily vapor deposited in vacuum.
Note that the electron injection/transporting layer is formed by using an organic compound material having an electron transporting property. Specifically, there are tris(8-quinolinolato)aluminum (abbreviation: Alq3); tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq3); bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq2); bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation: BAlp); bis[2-(2′-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)2); bis[2-(2′-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)2); bathophenanthroline (abbreviation: BPhen); bathocuproin (abbreviation: BCP); 2-(4-biphenylyl)-5-(4-tert-buthylphenyl)-1,3,4-oxadiazole (abbreviation: PBD); 1,3-bis[5-(4-tert-buthylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7); 2,2′,2″-(1,3,5-benzenetriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI); 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ); 3-(4-biphenylyl)-4-(4-ethylphenyl)-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: p-EtTAZ); and the like. Note that the invention is not limited to these.
The light-emitting layer can be formed by using 9,10-di(2-naphthyl)anthracene (abbreviation: DNA); 9,10-di(2-naphthyl)-2-tert-butylanthracene (abbreviation: t-BuDNA); 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi); coumarin 30; coumarin 6; coumarin 545; coumarin 545T; perylene; rubrene; periflanthene; 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP); 9,10-diphenylanthracene (abbreviation: DPA); 5,12-diphenyltetracene (abbreviation: DPT); 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (abbreviation: DCM1); 4-(dicyanomethylene)-2-methyl-6-(9-julolidyl)ethinyl-4H-pyran (abbreviation: DCM2); 4-(dicyanomethylene)-2,6-bis[p-(dimethylamino)styryl]-4H-pyran (abbreviation: BisDCM); or the like. Alternatively, a compound capable of emitting phosphorescence can be used such as bis[2-(4′,6′-difluorophenyl)pyridinato-N,C2′]iridium(picolinate) (abbreviation: FIr(pic)); bis[2-(3′,5′-bis(trifluoromethyl)phenyl)pyridinato-N,C2′]iridium(picolinato) (abbreviation: Ir(CF3ppy)2(pic)); tris(2-phenylpyridinato-N,C2′)iridium (abbreviation: Ir(ppy)3); bis(2-phenylpyridinato-N,C2′)iridium(acetylacetonate) (abbreviation: Ir(ppy)2(acac)); bis[2-(T-thienyl)pyridinato-N,C3′]iridium(acetylacetonate) (abbreviation: Ir(thp)2(acac)); bis(2-phenylquinolinato-N,C2′)iridium(acetylacetonate) (abbreviation: Ir(pq)2(acac)); or bis[2-(2′-benzothienyl)pyridinato-N,C3′]iridium(acetylacetonate) (abbreviation: Ir(btp)2(acac)).
Further, the light-emitting layer may be formed by using a singlet excitation light-emitting material as well as a triplet excitation light-emitting material including a metal complex. For example, among light-emitting pixels for red emission, green emission and blue emission, the light-emitting pixel for red emission that has a relatively short luminance half decay period is formed by using a triplet excitation light-emitting material while the other light-emitting pixels are formed by using a singlet excitation light-emitting material. The triplet excitation light-emitting material has high luminous efficiency, which is advantageous in that lower power consumption is required for obtaining the same luminance. That is, when the triplet excitation light-emitting material is applied to the pixel for red emission, the amount of current flown to the light-emitting element can be suppressed, resulting in the improved reliability. In view of power saving, the light-emitting pixels for red emission and green emission may be formed by using a triplet excitation light-emitting material while the light-emitting element for blue emission may be formed by using a singlet excitation light-emitting material. When forming the light-emitting element for green emission that is highly visible to human eyes by using the triplet excitation light-emitting material, further lower power consumption can be achieved.
As a structure of the light-emitting layer, a light-emitting layer having a different emission spectrum may be formed in each pixel to perform color display. Typically, light-emitting layers corresponding to the respective colors of R (red), G (green) and B (blue) are formed. In this case also, color purity can be improved as well as the mirror-like surface (glare) of the pixel portion can be prevented by adopting a structure where a filter for transmitting light with the emission spectrum is provided on the emission side of the pixel. By providing the filter, a circularly polarizing plate and the like that have conventionally been required can be omitted, which can recover the loss of light emitted from the light-emitting layer. Further, changes in color tone, which are recognized when the pixel portion (display screen) is seen obliquely, can be reduced.
Further alternatively, the light-emitting layer can be formed by using an electroluminescent material of high molecular compounds such as polyparaphenylene vinylene, polyparaphenylene, polythiophene or polyfluorene.
In any case, the layer structure of the electroluminescent layer can be changed, and there may be a case where a specific hole or electron injection/transporting layer or light-emitting layer is not provided, but instead, an alternative electrode layer functioning as such layer is provided, or a light-emitting material is dispersed in a layer as long as it can achieve the function of the light-emitting element.
In addition, a color filter (colored layer) may be formed on a sealing substrate. The color filter (colored layer) can be formed by vapor deposition or a droplet discharge method. With the color filter (colored layer), high-resolution display can be performed. This is because the provision of the color filter (colored layer) can correct the broad peak of the emission spectrum of each RGB to be sharp.
In addition, by forming a light-emitting material with a single color and combining a color filter or a color conversion layer with the light-emitting material, full color display can be performed. The color filter (colored layer) or the color conversion layer may be formed on, for example, a second substrate (sealing substrate), and then attached to the base substrate.
Then, a counter electrode (also referred to as a second electrode) 1211 is formed by sputtering or vapor deposition. One of the pixel electrode 1209 and the counter electrode 1211 functions as an anode while the other functions as a cathode.
As a cathode material, a material having a low work function (3.8 eV or lower) is preferably used such as metals, alloys, electrically conductive compounds, or a mixture of them. As a specific example of the cathode material, there are metals belonging to the group 1 or 2 of the periodic table, namely alkaline metals such as Li or Cs, alkaline earth metals such as Mg, Ca or Sr, alloys containing such metals (Mg:Ag or Al:Li), compounds containing such metals (LiF, CsF or calcium fluoride), or transition metals containing rare-earth metals. Note that since the cathode is required to transmit light, the aforementioned metals or alloys thereof are formed to be quite thin, and a metal (including an alloy) such as ITO is stacked thereon.
Then, a protective film formed of a silicon nitride film or a DLC (Diamond Like Carbon) film may be provided so as to cover the counter electrode 1211. Through the aforementioned steps, a light-emitting device of the invention is completed.
This embodiment can be freely implemented in combination with any of the aforementioned embodiment mode and other embodiments.
In this embodiment, description is made with reference to
In
Note that the configurations of the scan line driver circuits and the signal line driver circuit are not limited to the aforementioned ones, and for example, a sampling circuit, a level shifter and the like may be provided. In addition, a CPU, a controller and other circuits may be formed over the substrate 1307 together with the pixel portion 1302 in addition to the aforementioned driver circuits. Accordingly, the number of external circuits (ICs) connected can be reduced, and further reduction in weight and thickness can be achieved. Thus, the display device can be more effectively applied to a portable terminal or the like.
Note that in this specification, a display device such as a panel shown in
This embodiment can be freely implemented in combination with any of the aforementioned embodiment mode and other embodiments.
In this embodiment, description is made on a method for correcting a potential of a second power source line in order to reduce the effect of fluctuations of a current value of a light-emitting element that results from changes in the ambient temperature and degradation with time.
A light-emitting element has a characteristic that a resistance value (internal resistance value) thereof changes in accordance with changes in the ambient temperature. Specifically, on the assumption that the room temperature is a normal temperature, the resistance value of a light-emitting element decreases when the ambient temperature becomes higher than the normal temperature, while increasing when the ambient temperature becomes lower than the normal temperature. Therefore, when the ambient temperature becomes higher, a current flowing in the light-emitting element increases and thus the luminance thereof becomes higher than the predetermined level. On the other hand, when the ambient temperature becomes lower, a current flowing in the light-emitting element decreases even with the same voltage being applied, and thus the luminance thereof becomes lower than the predetermined level. In addition, the light-emitting element has another characteristic that the current value flowing therein decreases along with degradation with time. Specifically, when the total emission period and non-emission period have accumulated, the resistance value of the light-emitting element increases along with degradation. Therefore, when the total emission period and non-emission period have accumulated, a current value flowing in the light-emitting element decreases even with the same voltage being applied, and thus the luminance thereof becomes lower than the predetermined level.
Due to the aforementioned inherent characteristics of the light-emitting element, luminance varies when the ambient temperature changes or degradation is caused with time. In this embodiment, the effect of fluctuations of a current value of a light-emitting element that results from changes in the ambient temperature and degradation with time can be suppressed by performing corrections using a potential of a second power source line of the invention.
If a potential of the second power source line 1401 and the counter electrode 1404 are fixed in such a pixel configuration, the characteristics of the light-emitting element 1402 degrade when a current continuously flows into the light-emitting element 1402. In addition, the characteristics of the light-emitting element 1402 also change when the ambient temperature changes.
Specifically, if a current continuously flows into the light-emitting element 1402, the voltage-current characteristics thereof shift. That is, the resistance value of the light-emitting element 1402 increases, and the current value flowing therein decreases even with the same voltage being applied. In addition, even when the same amount of current flows into the light-emitting element 1402, the luminous efficiency decreases and the luminance becomes lower. As a temperature characteristic, the voltage-current characteristics of the light-emitting element 1402 shift when the ambient temperature becomes lower, and thus the resistance value of the light-emitting element 1402 increases.
Therefore, the effect of the aforementioned degradation with time and characteristic change in accordance with changes in the ambient temperature is corrected by using a monitoring circuit. In this embodiment, the potential of the second power source line 1401 is adjusted to correct the degradation of the light-emitting element 1402 with time and the characteristic change thereof in accordance with changes in the ambient temperature.
Thus, description is made on a configuration of a monitoring circuit. A monitoring current source 1408 and a monitoring light-emitting element 1409 are connected between a first monitoring power source 1406 and a second monitoring power source 1407. A connecting node of the monitoring light-emitting element 1409 and the monitoring current source 1408 are connected to an input terminal of a sampling circuit 1410 for outputting a voltage of the monitoring light-emitting element 1409. An output terminal of the sampling circuit 1410 is connected to a second power source line 1401. Accordingly, a potential of the second power source line 1401 is controlled by the output of the sampling circuit 1410.
Next, operation of the monitoring circuit is described. First, in the case where the light-emitting element 1402 is controlled to emit light corresponding to the highest gray scale, the monitoring current source 1408 supplies a current with a predetermined value to the light-emitting element 1402. The current value at this time is indicated by Imax.
Then, a voltage necessary for flowing the current of Imax is applied to both electrodes of the monitoring light-emitting element 1409. Even if the voltage-current characteristics of the monitoring light-emitting element 1409 change in accordance with the degradation with time or changes in the ambient temperature, a voltage applied to the both electrodes of the monitoring light-emitting element 1409 changes accordingly to have an optimal value. Therefore, the effect of changes (degradation with time, changes in the ambient temperature, and the like) of the monitoring light-emitting element 1409 can be corrected.
A voltage applied to the monitoring light-emitting element 1409 is inputted to the input terminal of the sampling circuit 1410. The output potential of the sampling circuit 1410 is connected to a power source circuit 1411 connected to a power source line 1412 for the power source circuit.
The power source circuit 1411 supplies a potential in accordance with the potential from the output terminal of the sampling circuit 1410 to the second power source line 1401. That is, the potential of the second power source line 1401 is corrected by the monitoring circuit 1410, thereby the light-emitting element 1402 is corrected of its degradation with time and characteristic change in accordance with changes in the ambient temperature.
Note that the sampling circuit 1410 may be any circuit capable of sampling and holding a voltage in accordance with a current inputted to the monitoring light-emitting element 1409. For example, a voltage inputted may be sampled by using a switching element such as a MOS transistor and a capacitor.
The power source circuit 1411 may be any circuit capable of outputting a voltage inputted. For example, it may be constructed by using an operational amplifier, a bipolar transistor or a MOS transistor, or a combination of these.
Note that the monitoring light-emitting element 1409 is desirably formed over the same substrate as, by the same manufacturing method as, and concurrently with the light-emitting element 1402 in the pixel. This is because if there is a difference in characteristics between the monitoring light-emitting element and the light-emitting element in the pixel, accurate correction cannot be carried out.
Note that there are periods when current is not supplied to the light-emitting element 1402 in the pixel frequently; therefore, the monitoring light-emitting element 1409 degrades at faster speed if a current is continuously supplied to the monitoring light-emitting element 1409. Therefore, a potential outputted from the sampling circuit 1410 corresponds to a potential to which high degree of correction is applied. Thus, the correction may be carried out in accordance with the actual degradation level of the light-emitting element in the pixel. For example, if the average emission rate of the whole pixels is 30%, a current may be supplied to the monitoring light-emitting element 1409 only in the period corresponding to 30% of the luminance. At this time, there arises a period when no current is supplied to the monitoring light-emitting element 1409; however, voltage is required to be continuously supplied from the output terminal of the sampling circuit 1410. In order to realize this, a capacitor may be connected to the input terminal of the sampling circuit 1410 so as to hold a potential of the time when a current has been supplied to the monitoring light-emitting element 1409.
Note that when the monitoring circuit is operated in accordance with the highest gray scale, a potential that is subjected to high degree of correction is outputted, which can make a screen burn in the pixels (luminance unevenness due to variations of degradation levels among pixels) less noticeable. Therefore, the monitoring circuit is desirably operated in accordance with the highest gray scale.
In this embodiment, it is further preferable to operate the driving transistor 1403 in the linear region. By operating the driving transistor 1403 in the linear region, it can roughly operate as a switch. Therefore, the effect of the characteristic change of the driving transistor 1403 due to degradation with time or changes in the ambient temperature can be lessened. In the case of operating the driving transistor 1403 only in the linear region, current supply to the light-emitting element 1404 is often controlled digitally. In such a case, it is preferable to combine a time gray scale method, an area gray scale method and the like in order to achieve multi-gray scale display.
This embodiment can be freely implemented in combination with any of the aforementioned embodiment mode and other embodiments.
As an electronic apparatus having the semiconductor device of the invention, there are a television receiver, a camera (e.g., video camera or a digital camera), a goggle display, a navigation system, an audio reproducing device (e.g., a car audio component set), a computer, a game machine, a portable information terminal (e.g., a mobile computer, a portable phone, a portable game machine, or an electronic book), an image reproducing device provided with a recording medium (specifically, a device for reproducing a recording medium such as a digital versatile disc (DVD) and having a display portion for displaying the reproduced image), and the like. Specific examples of such electronic apparatuses are shown in
The display panel 5001 has a pixel portion 5002 where multiple pixels are provided, a scan line driver circuit 5003, and a signal line driver circuit 5004 for supplying a video signal to a selected pixel. Note that in the case of manufacturing an EL module, the semiconductor device that constitutes the pixels in the pixel portion 5002 may be manufactured by using the aforementioned embodiments. In addition, a control driver circuit portion such as the scan line driver circuit 5003 and the signal line driver circuit 5004 can be manufactured by using TFTs formed in accordance with the aforementioned embodiments. In this manner, an EL module television shown in
Among the signals received at the tuner 5101, audio signals is transmitted to the audio signal amplifying circuit 5105, and an output thereof is supplied to a speaker 5107 through an audio signal processing circuit 5106. A control circuit 5108 receives control data on the receiving station (receive frequency) and volume from an input portion 5109, and transmits the signal to the tuner 5101 and the audio signal processing circuit 5106.
As shown in
By applying the semiconductor device of the invention to the television receivers shown in
Further, by applying the semiconductor device of the invention to the television receivers shown in
Needless to say, the invention is not limited to a television receiver, and can be applied to various objects such as a monitor of a personal computer, an information display board at the train station or airport, or a large-area advertising display medium such as an advertising display board on the street.
The printed wiring board 5302 is provided with a controller 5307, a central processing unit (CPU) 5308, a memory 5309, a power supply circuit 5310, an audio processing circuit 5311, a transmission/reception circuit 5312 and the like. The printed wiring board 5302 and the display panel 5301 are connected through a flexible printed wiring board (FPC) 5313. The printed wiring board 5313 may be provided with a capacitor, a buffer circuit and the like in order to prevent noise interruption on the power supply voltage or signals and also prevent dull signal rising. In addition, the controller 5307, the audio processing circuit 5311, the memory 5309, the CPU 5308, the power supply circuit 5310 and the like can be mounted on the display panel 5301 by COG (Chip On Glass) bonding. By the COG bonding, a scale of the printed wiring board 5302 can be reduced.
Various control signals are inputted/outputted through an interface (I/F) portion 5314 provided on the printed wiring board 5302. In addition, an antenna port 5315 for transmitting/receiving signals to/from an antenna is provided on the printed wiring board 5302.
The power supply circuit 5310 supplies power to operate the display panel 5301, the controller 5307, the CPU 5308, the audio processing circuit 5311, the memory 5309 and the transmission/reception circuit 5312. Depending on the specification of the panel, the power supply circuit 5310 may be provided with a current source.
The CPU 5308 includes a control signal generation circuit 5320, a decoder 5321, a register 5322, an arithmetic circuit 5323, a RAM 5324, an interface 5319 for the CPU 5308 and the like. Various signals inputted to the CPU 5308 through the interface 5319 are once stored in the register 5322 before inputted to the arithmetic circuit 5323, the decoder 5321 and the like. The arithmetic circuit 5323 performs operation based on the signals inputted, and specifies an address for sending various instructions. On the other hand, signals inputted to the decoder 5321 are decoded, and inputted to the control signal generation circuit 5320. The control signal generation circuit 5320 generates signals containing various instructions based on the signals inputted, and transmits them to an address specified in the arithmetic circuit 5323, specifically such as the memory 5309, the transmission/reception circuit 5312, the audio processing circuit 5311, the controller 5307 and the like.
The memory 5309, the transmission/reception circuit 5312, the audio processing circuit 5311, and the controller 5307 operate in accordance with the respective instructions received. The operation is described briefly below.
Signals inputted from an input means 5325 are transmitted to the CPU 5308 mounted on the printed wiring board 5302 through the I/F portion 5314. The control signal generation circuit 5320 converts image data stored in the VRAM 5316 into a predetermined format in accordance with signals transmitted from the input means 5325 such as a pointing device and a keyboard, and then transmits the data to the controller 5307.
The controller 5307 processes signals containing image data that are transmitted from the CPU 5308 in accordance with the specification of the panel, and then supplies the data to the display panel 5301. In addition, the controller 5307 generates Hsync signals, Vsync signals, clock signals CLK, AC voltage (AC Cont), and switching signals L/R based on the power supply voltage inputted from the power supply circuit 5310 and the various signals inputted from the CPU 5308, and supplies them to the display panel 5301.
The transmission/reception circuit 5312 processes signals that have been transmitted/received as electromagnetic waves at an antenna 5328, and specifically includes high frequency circuits such as an isolator, a bandpass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler and a balun. Among signals transmitted/received to/from the transmission/reception circuit 5312, signals containing audio data are transmitted to the audio processing circuit 5311 in accordance with the instruction from the CPU 5308.
The signals containing audio data that are transmitted in accordance with the instruction from the CPU 5308 are demodulated into audio signals in the audio processing circuit 5311 and then transmitted to a speaker 5327. Audio signals transmitted from a microphone 5326 are modulated in the audio processing circuit 5311, and then transmitted to the transmission/reception circuit 5312 in accordance with the instruction from the CPU 5308.
The controller 5307, the CPU 5308, the power supply circuit 5310, the audio processing circuit 5311, and, the memory 5309 can be integrated as a package of this embodiment. This embodiment can be applied to any circuits except high frequency circuits such as an isolator, a bandpass filter, a VCO (Voltage Controlled Oscillator), a LPF (Low Pass Filter), a coupler and a balun.
The display panel 5301 is connected to the printed board 5331 through an FPC 5313. On the printed board 5331, a speaker 5332, a microphone 5333, a transmission/reception circuit 5334, and a signal processing circuit 5335 including a CPU, a controller and the like are formed. Such module is combined with an input means 5336, a battery 5337 and an antenna 5340, and then incorporated into housings 5339. A pixel portion of the display panel 5301 is disposed so that it can be seen from an open window formed in the housing 5339.
The portable phone in accordance with this embodiment can be changed into various modes in accordance with the function or applications. For example, multiple display panels may be provided and the housing may be appropriately divided into multiple units so as to enable the portable phone to be folded/unfolded with a hinge.
In the portable phone in
Display devices used in such electronic apparatuses can be formed by using not only a glass substrate but also a heat-resistant plastic substrate in accordance with size, strength or applications. Accordingly, even more reduction in weight can be achieved.
Note that in each display portion used for the aforementioned electronic apparatuses, a semiconductor device shown in embodiment mode is provided. Therefore, even when a signal supply is stopped to a memory circuit in each pixel of a pixel portion from a scan line driver circuit and a data line driver circuit that are disposed on the periphery of the pixel portion, signal data that has been supplied until immediately before the signal supply is stopped can be held, and thus the light-emitting element can hold the emission state or non-emission state even under the aforementioned circumstance. Therefore, neither the scan line driver circuit nor the data line driver circuit is required to be operated for displaying still images or the like by using the semiconductor device of the invention, and thus a significant reduction in power consumption can be expected. Accordingly, products with reduced power consumption even in displaying still images can be provided to customers.
Note that examples shown in this embodiment are only exemplary, and therefore, the invention is not limited to such applications.
This embodiment can be freely implemented in combination with any of the aforementioned embodiment mode and other embodiments.
The present application is based on Japanese Priority application No. 2005-121730 filed on Apr. 19, 2005 with the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2005-121730 | Apr 2005 | JP | national |
This application is a continuation of U.S. application Ser. No. 11/278,790, filed Apr. 5, 2006, now allowed, which claims the benefit of a foreign priority application filed in Japan as Serial No. 2005-121730 on Apr. 19, 2005, both of which are incorporated by reference.
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| Number | Date | Country | |
|---|---|---|---|
| 20110187762 A1 | Aug 2011 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 11278790 | Apr 2006 | US |
| Child | 13085521 | US |
